PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A

Discrete POWER & Signal Technologies

PN2222A

MMBT2222A
C

PZT2222A
C

E C BE

E C B

TO-92 SOT-23
Mark: 1P

SOT-223

MMPQ2222
E B E B E B

NMT2222
C2 E1 C1

SOIC-16

C B2 E2

SOT-6
Mark: .1B

B1

NPN General Purpose Amplifier

This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.

Absolute Maximum Ratings*

Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25C unless otherwise noted

Parameter

Value
40 75 6.0 1.0 -55 to +150

Units
V V V A C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

1997 Fairchild Semiconductor Corporation

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A

NPN General Purpose Amplifier

(continued)

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current I C = 10 mA, IB = 0 I C = 10 A, IE = 0 I E = 10 A, I C = 0 VCE = 60 V, VEB(OFF) = 3.0 V VCB = 60 V, IE = 0 VCB = 60 V, I E = 0, TA = 150C VEB = 3.0 V, IC = 0 VCE = 60 V, VEB(OFF) = 3.0 V 40 75 6.0 10 0.01 10 10 20 V V V nA A A nA nA

ON CHARACTERISTICS
hFE DC Current Gain I C = 0.1 mA, VCE = 10 V I C = 1.0 mA, VCE = 10 V I C = 10 mA, VCE = 10 V I C = 10 mA, VCE = 10 V, TA = -55C I C = 150 mA, VCE = 10 V* I C = 150 mA, VCE = 1.0 V* I C = 500 mA, VCE = 10 V* I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA I C = 150 mA, IB = 1.0 mA I C = 500 mA, IB = 5.0 mA
(except MMPQ2222 and NMT2222)

35 50 75 35 100 50 40

300

VCE(sat ) VBE( sat)

Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage*

0.6

0.3 1.0 1.2 2.0

V V V V

SMALL SIGNAL CHARACTERISTICS

fT Cobo Cibo rbCC NF Re(hie) Current Gain - Bandwidth Product Output Capacitance Input Capacitance Collector Base Time Constant Noise Figure Real Part of Common-Emitter High Frequency Input Impedance

IC = 20 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 0.5 V, IC = 0, f = 100 kHz IC = 20 mA, VCB = 20 V, f = 31.8 MHz IC = 100 A, VCE = 10 V, RS = 1.0 k, f = 1.0 kHz IC = 20 mA, VCE = 20 V, f = 300 MHz

300 8.0 25 150 4.0 60

MHz pF pF pS dB

SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time

(except MMPQ2222 and NMT2222)

VCC = 30 V, VBE(OFF) = 0.5 V, I C = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA, I B1 = IB2 = 15 mA

10 25 225 60

ns ns ns ns

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10)

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A

NPN General Purpose Amplifier

(continued)

Thermal Characteristics
Symbol
PD RJC RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN2222A 625 5.0 83.3 200

Max
*PZT2222A 1,000 8.0 125

Units
mW mW/C C/W C/W

Symbol
PD RJA

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die

Max
**MMBT2222A 350 2.8 357 MMPQ2222 1,000 8.0 125 240

Units
mW mW/C C/W C/W C/W

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Typical Characteristics
Typical Pulsed Current Gain vs Collector Current
500
VCE = 5V

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

h FE - TYPICAL PULSED CURRENT GAIN

Collector-Emitter Saturation Voltage vs Collector Current

0.4 = 10 0.3
125 C 25 C

400
125 C

300 200
25 C

0.2

100
- 40 C

0.1
- 40 C

0 0.1

0.3

1 3 10 30 100 I C - COLLECTOR CURRENT (mA)

P 19

300

10 100 I C - COLLECTOR CURRENT (mA)

P 19

500

V BE(ON) BASE-EMITTER ON VOLTAGE (V)

VBESAT- BASE-EMITTER VOLTAGE (V)

Base-Emitter Saturation Voltage vs Collector Current

1
= 10

Base-Emitter ON Voltage vs Collector Current

1 VCE = 5V 0.8
- 40 C 25 C

0.8

- 40 C 25 C

0.6

0.6

125 C

125 C

0.4

0.4 1 IC 10 100 - COLLECTOR CURRENT (mA) 500

0.2 0.1

1 10 I C - COLLECTOR CURRENT (mA)

P 19

25

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A

NPN General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Collector-Cutoff Current vs Ambient Temperature

I CBO- COLLECTOR CURRENT (nA) 500 CAPACITANCE (pF) 100 10 1 0.1 V
CB

Emitter Transition and Output Capacitance vs Reverse Bias Voltage

20 16 12
C te

= 40V

f = 1 MHz

8 4
C ob

25

50 75 100 125 TA - AMBIENT TEMPERATURE ( C)

150

0.1

1 10 REVERSE BIAS VOLTAGE (V)

P 19

100

Turn On and Turn Off Times vs Collector Current

400 IB1 = IB2 = 320 TIME (nS)
V cc = 25 V Ic 10

Switching Times vs Collector Current

400 IB1 = IB2 = 320 TIME (nS)
V cc = 25 V Ic 10

240 160 80
t on t off

240 160 80 0 10
tf td ts tr

0 10

100 I C - COLLECTOR CURRENT (mA)

1000

100 I C - COLLECTOR CURRENT (mA)

P 19

1000

Power Dissipation vs Ambient Temperature

1 PD - POWER DISSIPATION (W)

0.75

SOT-223 TO-92

0.5

SOT-23

0.25

25

50 75 100 o TEMPERATURE ( C)

125

150

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A

NPN General Purpose Amplifier

(continued)

Test Circuits
30 V

200

16 V 1.0 K 0 200ns 500

FIGURE 1: Saturated Turn-On Switching Time

- 15 V

6.0 V

1k

37

30 V 1.0 K 0 200ns

50

FIGURE 2: Saturated Turn-Off Switching Time