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Datasheet
Datasheet
2SC2922
Application : Audio and General Purpose
(Ta=25C) 2SC2922 100max 100max 180min 30min 2.0max 50typ 250typ V MHz pF
20.0min 4.0max
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC2922 180 180 5 17 5 200(Tc=25C) 150 55 to +150 Unit V V V A A W C C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=180V VEB=5V IC=25mA VCE=4V, IC=8V IC=8A, IB=0.8A VCE=12V, IE=2A VCB=10V, f=1MHz
Unit
A A
V
a b
2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1
hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)
I C V CE Characteristics (Typical)
1.5
1A
17
A
70
0m
600
15
mA mA 500 A 400m
300 mA
A
200m
10
10
em
p) as (C 5C
100 mA
0.2
0.4
0.6
0.8
1.0
25
30
I B =20mA
12
5A
(Ca
50mA
se
Tem
eT
I C =10A
p)
2.4
(V C E =4V) 200 DC C urrent G ain h FE DC Cur rent Gain h F E 200 125C 100 25C 50 30C
(V C E =4V)
j - a (C /W)
h FE I C Characteristics (Typical)
j-a t Characteristics
2
100
Typ
50
0.5
10 0.02
0.1
0.5
10
17
10 0.02
0.1
0.5
10 17
0.1
10
1000
2000
f T I E Characteristics (Typical)
(V C E =12V) 80 50
P c T a Derating
10 m s
160
60
Typ
10 5
DC
W ith In fin
120
ite he
40
at si nk
80
20
0 0.02
0.2 0.1 1 5 10 2 10 100 300 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)
5 0
61