NPN SILICON PLANAR RF TRANSISTOR

ISSUE 3 NOVEMBER 94 FEATURES * High fT=650MHz * Maximum capacitance 0.7pF * Low noise < 5dB at 500MHz

MPSH10

B E C REFER TO MPSH10P FOR GRAPHS TO92 SYMBOL VCES VCEO VEBO IC Ptot Tj:Tstg VALUE 30 25 3 25 350 -55 to +150 UNIT V V V mA mW C

ABSOLUTE MAXIMUM RATINGS.

PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at Tamb = 25C)

PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector Base Capacitance Collector Base Time Constant SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE fT Ccb rbCc 60 650 0.7 9 MHz pF ps MIN. 30 25 3 100 100 0.5 0.95 TYP. MAX. UNIT V V V nA nA V V CONDITIONS. IC=100A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=25V, IE=0 VEB=2V,IC=0 IC=4mA, IB=0.4mA IC=4mA, VCE=10V IC=4mA, VCE=10V* IC=4mA, VCE=10V, f=100MHz VCB=10V, IE=0 f=1MHz IC=4mA, VCE=10V, f=31.8MHz

3-87

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