):FET(Field-Effect

..
: " "FET:
)..(PN-FET
)..(MOSFET
:
) ..( P
) ..( N

:
" " ) (
) ( ..
" "FET ) (P ) (N ..
" "FET
"" ) N
( ) (Drain ).. (Source
"" P )(Gate
" .. PN-FET
N ) (Drain )(Source
) (ID .
) (Gate ) (Source PN
" " . " "
.

 ) (-UGS " ".

) ( ) (RDS
) (Drain )) (Source (N-FET ) (Gate
.
.

: N FET )
(.
.
: )(..
:
.1 ..
.2 ..
.3 ..
.4 ..
.5 )(10^9 FET.
.6 ..
.7 ..


MOSFET
:
.1
.2
.3
.4

Substrate N P ..
N <==> P
Drain .. Source
) ( SIO2 )( ..
.. Gate

) (P-Channel ) (N-Channel
) ( ..

: MOSFET
) ( .
) ( .
.1 Gate ) (..
.2 ) ( N

.

.

 .3 ) ( P

.

.

) ( ..
MOSFET ): (CMOS
CMOS :

Complementary Metal Oxide Semiconductor Field Effect Transistor

) (N-Channel , P-Channel :

) (LOW P-MOS FET

P .
) (High N-MOS FET
N .

CMOS N-MOS PMOS ) (.

) (

.

 :
:Dual-Gate MOSFET
MOSFET

)( ..
) (D ) (S .
..
:(Vertical Metal-Oxide-Semiconductor) VMOSFET
" "FET
"" ) 5 ( ) 1 10
( ..

10 ) (D ) (S 100 ..
: (Vertical Metal-Oxide-Semiconductor Siemens Power) SIPMOS-FET
VMOS-FET .

..

: N

:
MOSFET BJT

.

 :MOSFET
MOSFET n
) ( STR
..

..
..

..

..
..
..

) MOSFET (:

3.3 ..

"" ..

..
..

" " ""

" "..

..

.
..
%100
MOSFET

MOSFET ..
MOSFET

..
) (
..
MOSFET

UPS


MOSFET ..
.. MOSFET ESD
..

Voltage applied to gate Voltage across resistor Voltage across transistor

2.5 volts

no voltage

approximately 12 volts

3.5 volts

less than 12 volts

less than 12 volts

4.5 volts

approximately 12 volts

virtually no voltage

 MOSFET

MOSFET

The power MOS FET switching circuit

) (MOS FET
) (DC ).. (AC
) (12V ).. (220V
:

) (TR3 and TR6 ) (L ) (TR3 and TR4 ) (H

).. (TR5 and TR6
) (TR4 and TR5 ) (H ) (TR3 and TR4 ) (L
).. (TR5 and TR6

H Bridge Motor control

.. H
MOSFET ..
) (Hi1 ) (Lo2
..A
) (Hi2 ) (Lo1
..C

IRF511 TMOS Power FET

Data sheet
) (IRF511 ) (N-Channel
) (TO-220


..
Id

)rds(on

Vds

Device

4.0 A

0.6 Ohm

100V

IRF510

4.0 A

0.6 Ohm

60V

IRF511

3.5 A

0.8 Ohm

100V

IRF512

3.5 A

0.8 Ohm

60V

IRF513

IRF511
) (A
..

)( )(6 to 12
).. (10uA

..

A 3x3-inch piece of circuit board (or similar size metal object), which functions as the pick-up sensor,
is connected to the gate of Q1. A 100 Mega Ohm resistor, R2, isolates Q1's gate from R1, allowing
the input impedance to remain very high. If a 100-MegaOhm resistor cannot be located, just tie 5
22-MegaOhm resistors in series and use that combination for R2. In fact, R2 can be made even
higher in value for added sensitivity.
Potentiometer R1 is adjusted to a point where the piezo buzzer just begins to sound off and then
carefully backed off to the point where the sound ceases. Experimenting with the setting of R1 will
help in obtain in the best sensitivity adjustment for the circuit. Potentiometer R1 may be set to a
point where the pick-up must be contacted to set of the alarm sounder. A relay or other currenthungry component can take the place of the piezo sounder to control almost any external circuit.

.. 30 5
FET
.. ( 1N4148) (15mA)

Meter check of a JFET transistor

Testing a JFET with a multimeter might seem to be a relatively easy task, seeing as how it has only one PN
junction to test: either measured between gate and source, or between gate and drain.