TAP CH PHAT TRIEN KH&CN, TAP 11, SO 02 - 2008

TRANSISTOR PHN T
Trn Tin Phc Trng i hc Nha Trang 1.T VN Linh kin bn dn khi vi kch thc hng trm nanmt tr ln c nhc im l kh ch to hng triu hoc hng t linh kin ging nhau trong chip c mt cc cao. Nhng phn t ring c cu trc thang nanmt t nhin rt d dng ch to chnh xc nh nhau v chng t hnh thnh, t lp rp. Cc nh nghin cu ang c gng m phng, thit k, ch to v kim tra cc phn t ring v cc cu trc siu phn t nan hot ng nh cc chuyn mch in, c tnh cht ging nh cc transistor bn dn nh. in t hc phn t v nguyn t l mt hng tip cn t di y ln (bottom up) ca in t nan. C t nht bn loi linh kin chuyn mch in t phn t ang c nghin cu [1, tr.32]: Chuyn mch in t phn t iu khin bng in trng, da trn cc hiu ng lng t phn t. Linh kin c in t phn t, s dng cc lc c p vo bng in hay c hc thay i cu to, lm chuyn ng mt phn t hoc mt nhm cc phn t gy nn hiu ng chuyn mch. Chuyn mch phn t quang hot/i mu theo nh sng, s dng nh sng thay i hnh dng, nh hng hay cu hnh in t ca phn t gy nn hiu ng chuyn mch. Linh kin phn t c in t, s dng phn ng in ha thay i hnh dng, nh hng hoc cu hnh in t ca mt phn t t gy nn hiu ng chuyn mch. Chnh lu phn t c Aviram v Ratner nghin cu t nm 1974. V sau, Tour v cc cng s tng hp chuyn mch do Aviram xut v chnh lu phn t c thc hin. Nhiu cng trnh o c dn v cc tnh cht in ca cc phn t ring hay m phng chng. Cng ngy cng c thm nhiu nhm nghin cu quan tm n in t phn t nh s h tr ca cc phn mm m phng ha hc v knh hin vi u d qut (Scanning Probe Microscopy SPM) to nh, phn tch b mt c phn gii cao cng nh thao tc n tng nguyn t. Theo quan nim c in, in tr ph thuc tit din dy dn. Tit din dy dn gim ti kch thc phn t th nhng hiu ng mi xut hin, dy phn t c kh nng dn dng khng tun theo nh lut Ohm.

Hnh 1: Dy phn t c kh nng dn in

Hnh 1 trnh by cu trc ca mt dy phn t do Tour pht hin v chng minh c dn in ca mt phn t. Nhng dy phn t c th c ch to rt di bng phng php tng hp ha hc. Mt chui cc vng benzene c ni bng lin kt axetylen. Nhng qu o hay nhng m my in t kt hp vi nhau hay tng tc to thnh mt qu o ln xuyn sut chiu di ca dy cho php cc in t linh ng chy theo chiu in trng v to nn dng in.

Science & Technology Development, Vol 11, No.02 - 2008 Mt s cng trnh v in t phn t nghin cu cch to cc ging th gi cc in t linh ng ca phn t hnh thnh chuyn mch (Hnh 2).

Hnh 2: Cu trc v c ch ca RTD phn t

Mt ging lng t c hnh thnh t mt dy phn t m hai bn l ro th CH2 lm gy chui cc qu o kt hp hnh . Trong , hiu ng ng hm c iu khin bng in trng hay hiu ng chuyn mch n in t. Cu trc c th to nn it ng hm cng hng (resonant tunneling diode, RTD) hay transistor ng hm cng hng (resonant tunneling transistor, RTT). Trong cng trnh ny tc gi trnh by nhng kt qu nghin cu v m phng loi linh kin chuyn mch in t phn t iu khin bng in trng transistor phn t. y l loi linh kin c dng h c tuyn li ra ging nh MOSFET trong bn dn khi. Transistor phn t l loi linh kin in t nan ha hn nht trong nhng nm ti so vi bn loi nu trn. Ba loi sau c hn ch c bn khi ch to v s dng v mt linh kin cao m dng ti nh sng v lc c hc.

Transistor phn t da trn vng benzene c nghin cu trong vi nm gn y [5-1214-15]. Hu ht cc nghin cu cng b dng phn t C6H6S2 hay C6H6S2-2H lm knh phn t v m phng cho nguyn t Lu hunh (S) tip xc vi ba nguyn t Vng (Au) trong cu to transistor. Tuy nhin khi m phng phn t ny trn phn mm ha hc CAChe 6.1 th tc gi nhn thy nguyn t S trong phn t khng c 3 lin kt gp i vi Au nh gi thuyt tnh ton. Mt khc, cc nghin cu trn u cho kch thc phn t di dng gi nh v ng c tuyn c c cn mang tnh cht n l. Ln u tin, tc gi ca nghin cu ny tm cc phn t ha hc (Bng 1) c sn trn th trng v mt thng mi, ti u ha bng phn mm ha hc [6] ly cc tham s cho chng trnh m phng linh kin trong GUI ca MATLAB. Chnh iu to nn nhng kt qu mi v cng cng c thm tnh hin thc ca transistor phn t. 2.C S L THUYT CA TRANSISTOR PHN T Ta hy xt mt linh kin phn t c cu trc nh Hnh 3.

TAP CH PHAT TRIEN KH&CN, TAP 11, SO 02 - 2008

Hnh 3: Cu to transistor phn t

Phn t (vng benzene) ng vai tr knh dn lin kt qua lp Vng (Au) ri tip xc vi hai in cc D v S c khp kn bng ngun nui VD. iu khin dn ca phn t thng qua th cc cng VG cch ly vi knh bng lp SiO2 [9]. Trong knh phn t, do tng tc gia cc nguyn t m mc nng lng b lng t ha thnh di. Mt s phn t c di nng lng phn thnh vng y, vng trng v xen gia l vng cm rt r rt. Trong trng hp ta c th m hnh ha thnh cc trng hp c th xt tnh cht in ca n. Trn Hnh 4 [11, tr.2], khi VD = 0, VG = 0, hai in cc D v S c th in ha tng ng l S = 1 vD = 2. Mc th in ha vo gia vng cm ca mc nng lng phn t, dng in trong knh bng khng, phn t khng c tnh cht cch in (Hnh 4a).

Hnh 4: Tnh dn in ca phn t

Nu tc ng mt th cng VG > 0, h mc nng lng b y xung. Khi cc mc nng lng trong vng trng ngang mc th in ha, cc in t d dng t lp tip xc vo chim cc mc nng lng trong vng trng, phn t mang in tch m, tnh cht dn in ca knh l loi n (Hnh 4b). Ngc li, nu tc ng mt th cng VG < 0, h mc nng lng c nng cao ln. Khi cc mc nng lng trong vng y ngang mc th in ha, cc in t trong phn t d dng qua lp tip xc i vo cc in cc D, S li trong knh phn t cc l trng. Trong trng hp ny, phn t mang in tch dng, tnh cht dn in ca knh l loi p (Hnh 4c). Nu th ngun VD khc khng th th cng VG c tc dng iu khin dn ca knh phn t, hiu ng transistor c hnh thnh. Dng in tch vn chuyn qua li gia phn t sang cc in cc S v D tng ng qua lp tip xc trn mt mc nng lng l:

I1 = ( q )

1 ( f1 N ) h

(1)

Science & Technology Development, Vol 11, No.02 - 2008

I 2 = ( q )

2 ( f2 N ) h

(2)

Trong f1 l hm Fermi trn tip xc gia cc S vi phn t v f2 l hm Fermi trn tip xc phn t vi cc D; 1/ v 2/ l mc thot ca in tch qua tip xc; q l in tch ca electron; N l tr s trung bnh cc electron trong phn t trng thi n nh khong gia f1 v f2. trng thi n nh ban u, khi cha cp ngun VD th I1 + I2 = 0 nn ta c:

N=

1 f1 + 2 f 2 1 + 2

(3)

Khi cp ngun VD 0, dng in trong mch t D sang S l ni tip [10, tr.S437] nn:

I = I1 = I 2 =

q 1 2 [ f1 ( ) f 2 ( )] h 1 + 2

(4)

Trng hp di nng lng E c mt trng thi D(E) th dng ton phn chy qua knh phn t l [11, tr.15]:

I=
Trong [8]:

q 2 dED( E ) 1 1+ 2 [ f1 ( E ) f 2 ( E )] h 1 E 1 1 + exp K T B 1

(5)

f1

(6)

f2

1 E 2 1 + exp K T B 2

(7)

Xt knh phn t c rng W, di L th D(E) = mWL/22. Nu chn phn t c tnh lin kt i xng hai u vi in cc D v S th:

1 2 x = = h h L

(8)

Trong x l vn tc thot ca in tch theo hng trc SD. gii c phng trnh (5) trong MATLAB ta cn chuyn cu trc transistor phn t thnh s in tng ng nh Hnh 5. Trong UL l do VD gy st p trn phn t. UL c nh hng ln x. Khi c gi tr ln, UL s lm m rng di nng lng E v tng s mc nng lng cho php in t chim trong ln ng k [11] gy nn tnh cht gn bo ha ca c tuyn dng th transistor phn t.

Hnh 5: S tng ng

TAP CH PHAT TRIEN KH&CN, TAP 11, SO 02 - 2008 4.KT QU M PHNG LINH KIN TRANSISTOR PHN T Tra cu s liu cc phn t [6 - 13] chn cc vng benzene c cu trc, di cc mc nng lng to nn vng y, vng trng, vng cm v nhng tham s lin quan ph hp vi l thuyt transistor phn t m c bit l di nhit c kh nng ch to, ng dng vo thc t. Nhng cht trng thi rn trong iu kin p sut v nhit phng c u tin la chn. Ngc li, cc cht trng thi kh hay lng cha xem xt trong ti ny.

Hnh 6: C 3 lin kt gp i vi I

Bng 1: Mt s vng Benzene c th lm knh dn trong transistor phn t [13] Cht C6H4I2 C6H4F2 C6H4Br2 C6H4BrI Tn gi Diiodo-Benzene Difloro-Benzene DibromoBenzene Bromo-iodoBenzene Nhit chuyn pha rn/lngTo(K) 402,15 249,6 360,0 3,0 363,25 Cu to phn t

Bng 1 cho thy s liu phn t C6H4I2 c nhit chuyn pha cao, tnh kh thi ca linh kin vo thc t tt hn nn tc gi chn phn t ny tip tc nghin cu. Thit k phn t v ti u ha trn phn mm CAChe 6.1 ly cc kt qu cn thit: kch thc theo lc tng tc Van der Waals, kh nng v s lin kt gp i vi cc phn t Vng. Kt qu m phng trn Hnh 6 cho thy nguyn t Iot (Iodine-I) c ba lin kt gp i vi ba phn t Vng (Gold-Au) trong lp tip xc. Mc nng lng cao nht trong vng y ( b chim) HOMO = -8,947eV. Mc nng lng thp nht trong vng trng (cha b chim) LUMO = -0,653 eV. rng vng cm l -8,294eV (Hnh 7). Mc nng lng Fermi ca Vng l -9,50 eV. Trong linh kin, hm cng ca Vng vo khong ~ - 5,3eV. [5, tr.27]

Science & Technology Development, Vol 11, No.02 - 2008

Hnh 7: Xc nh mc nng lng bng phn mm CAChe 6.1

M phng ha hc cho cc tham s nh trong Hnh 7 v Hnh 8. di L ca phn t tnh theo lc Van der Waals c gi tr trung bnh 1,0267nm. di L c th thay i trong khong 0,9239nm n 1,1292nm chia lm 6 bc. Mi bc thay i di l 0,03421nm. Tng t nh vy, rng W ca phn t c gi tr trung bnh 0,6733nm. rng W c th thay i trong khong 0,6059nm n 0,7406nm chia lm 6 bc. Mi bc thay i rng l 0,0224nm. dy trung bnh ca mt lp phn t SiO2 qua m phng l 0,5304nm. Gi thit mng SiO2 c ch to trong linh kin ny l t = 1,5nm (khong ba lp phn t SiO2). Lp chng trnh m phng trong GUI ca MATLAB 2006b ta v c h c tuyn I-V vi cc gi tr di v rng knh phn t cc th cng VG khc nhau (Hnh 9).

TAP CH PHAT TRIEN KH&CN, TAP 11, SO 02 - 2008

Hnh 8: Kch thc phn t tnh theo lc Van der Waals

Hnh 9: Layout ca GUI v transistor phn t dng C6H4I2

4.THO LUN H c tuyn c dng tng t nh MOSFET bn dn khi, H c tuyn chia thnh hai vng r rt. Vng c dc ln, dng in tng nhanh khi th VDS < 0,2V. Vng gn bo ha VDS > 0,2V. Ta c th gii thch kt qu nh sau: a) Th cng lm dch chuyn vng cha cc mc nng lng cho php (vng trng- cha b in t chim) giao vi mc th in ha. Do th in ha 1 = 2 nn in tch ra vo knh phn t trng thi cn bng, dng ID = 0. b) Ti mt gi tr th cng VG khng i nhng VD 0 th 1 2 , dng in tng ln. Do 1 - 2 = qVD nn VD tng trong khong ny lm tng nhanh s mc nng lng trong di cho php in t chim. iu ny tng t nh knh dn c m rng nn dng in tng theo tng ng.

Science & Technology Development, Vol 11, No.02 - 2008 c) Th VD tip tc tng lm mc th in ha 2 thp hn c mc LUMO ca phn t th s mc nng lng cho php trong vng dn khng tng tng ng nn dng in bin thin tng chm li. d) Th VD tng cao tc ng ln mc LUMO lm knh dn m rng thm mt s t mc nng lng cho php; dng in tng rt chm, c tuyn gn bo ha. Thit k layout c cc slider thay i L v W tng bc tng ng nh kt qu tnh ton phn mm ha hc cho ta mt s kt qu ng lu . Khi thay i kch thc di L ca phn t trn slider ng c tuyn I-V khng thay i. iu ny ph hp vi l thuyt v dn trn mt mc nng lng ca phn t l G = q2/ = 25,8k-1. Ngc li, tng kch thc rng W ca phn t, ng c tuyn I-V nng ln. Khi tng W chng ta lm tng din tch bn t tng ng CD v CE , tc l tng in dung lng t.

Hnh 10: Di cc mc nng lng tng ng vi cc on c tuyn

5.KT LUN Kt qu tnh ton vi transistor phn t C6H4 I2 cho thy, dng v th trong mch in nh nn cng sut tiu tn thp, l li th tng mt linh kin trn mt chip n. H c tuyn c dng tng t nh MOSFET bn dn khi. Kt qu ny cha xt ti nh hng ca bin thin nhit v dy phn t. Tuy nhin, dng h c tuyn thu c khng thay i khi ly 6 gi tr khc nhau ca L v W cho php chng ta hy vng loi transistor phn t c vng benzene vi kch thc hng nanmt sm hin thc. Transistor phn t c th c ch to ra t cc phng th nghim ha hc. Kt hp cc kt qu m phng ha hc phn t vi layout ca GUI trong MATLAB cng l thuyt transistor phn t cho ta mt hnh nh trc quan hn v loi linh kin in t nan mi m ny.

TI LIU THAM KHO

[1]. inh S Hin, in t nan - linh kin v cng ngh, Nxb i hc Quc gia Tp. H Ch Minh, (2005).

TAP CH PHAT TRIEN KH&CN, TAP 11, SO 02 - 2008 [2]. Ngy Hu Tm, Cng ngh nan-hin trng, thch thc v nhng siu tng, Nxb Khoa hc v k thut, H ni, (2004). [3]. A.Rahman, J. Guo, S. Datta and M. Lundstrom, Theory of ballistic transistors, IEEE Trans. Electron Devices 50 1853 (Special Issue on Nanoelectronics), (2003). [4]. G. C. Liang, A. W. Ghosh, M. Paulsson, and S. Datta, Electrostatic potential profiles of molecular conductors, Purdue University, West Lafayette, Indiana 47907, USA, [5]. 08 September, (2006). [6]. Ferdows Zahid, Magnus Paulsson and Supriyo Datta, Electrical Conduction through Molecules, West Lafayette, IN - 47907-1285, USA, July 8, (2003). [7]. Fujitsu, Cache Worksystem Pro 6.1, (2003). [8]. Justin Mullins, Quantum effect offers molecular transistors, NewScientist.com, news published 8 March (2004). [9]. M. Paulsson, S. Datta, Thermoelectric effects in Molecular electronics, Phys. Rev. B67241403(R), (2003). [10]. S. Datta, Quantum Transport: Atom to Transistor, Cambridge University Press, (2004). [11]. S. Datta, Electrical resistance: an atomistic view, 47907,USA, (2004). [12]. S. Datta, Lecture#2: Quantum Transport: Atom to Transistor, Cambridge, (2005). [13]. http://dynamo.ecn.purdue.edu/~datta/ [14]. http://webbook.nist.gov/chemistry/ [15]. http://www.mitre.org/tech/nanotech/ [16]. https://www.nanohub.org/