ANALOG CircuITs « Equivalent Gircults (large andarnall-signal) of diodes, BUT, JFETs and MOSFETs : ‘Small-signal means low frequency analysis while large signal means high trequency analysis. ‘The simplest and most fundamental non-linear circuits elament is the diode. ev characteristic of ideal diode is shown below — Reese Former Bae tor ‘An ideal diode has zero current when operated inthe reverse direction and is said to be cut off, or simply off, However the ideal diode behaves as a short circuit in the forward direction, passes current with zero voltage drop. Aforward biased diode is eaidto be turned on, or simply on. “The application of diede as a logie gates given below: OR-gate ‘AND gate In forward:-bias region, the diode iv relationship is ‘closely retated by Hayle - dow where, |, = saturation current = applied votage ri ar) = 25 mV, at room temperature t for germanium and |2 for silicon at rated current ‘As in forward direction i >> |,-theretore equation (A) may be writien © ie 8) or veAV, 1, > (0) Lot current |, corresponing to dlede voltage V, and |, corresporing to a voltage V, then form equation (8) 1 Le end % = gle Mine WvEYT 9 (D) 2M or V4-M -ovqh(2) \, or Vyr¥,=23 n¥q 0 [2] 20) from equation (F) we conclude that fora decade (factor of 10) change is current, the dinds voltage changes by 2.3m V, 18, approx. 60 mV for n= 1 and 120 mv for n= 2. This also suggests that the diode i-V relationship is mast conveniently plotted on semilog paper. Figure given below shows the temperature depenciency of the dinde forward characteristics. ‘At constant current, the voltage drop decreases by approximately 2 mV for every 1°C increase in temperature.at In reverse-bias of diode. the curtent is equal to the saturation current i == 1, ‘The reverse saturation current is due-te leakage effect Temperature dependency of reverse saturation current Leip eto ‘Means reverse saturation current |, is about doubbte in magnitude for every 10°C rise in temperature. for example : I for sliean |, is 5 nA st 25°C, then it becomes approximately 10 nA al 35°C. may be noted thal generation at minonity carers (i. leakage or saturation curren!) depends upon the temperature and is independent of the applied reverse voltage, Therefore the current due to flow of minosity cearsiers remain the same whether the applied reverse voltage incraased or decreased. ‘The most accurate description of the diode operation in the forward ragion is provided by the exponential model. Rb vy etDIVT 4 ( (hom i:V characters of dade Mp Gy (rom KWL) assuming that diade parameters |, and n are know. equations (and (i) have two unknown quantites 1, and Vy can easily calculated Figure given below shows the graphical analysis of Circuit shown above using exponential diode model Diode small-signal mode! shown below, will be valid for signal whose ampktudes are smaller than about 10mv. i P emg Ve “L_=_ Diode smailssignai resistance is given by retation walt 1, gis inversely proportional to-the bias eurrent |, 1 Slope of diode smait-signal modal is, ‘Small-eignal made! for the MOSFET is given below a) ° ¥ oS Transconductance. 9," Yosh Wal st ey 3B where, V, “Early votlage “Trensconductance g,, is als0 equat to the slope of iy gg characteristic atthe bias point, a Moa Nex * Vow, ‘Drain current gen by relation 1 w b= F HGaus 7 Mog— YY (in saturation region} ‘The G.S. (Common Source) configuration is best ‘suited for obtaining the buck of gain required in a amplifier “The law input resistance of the GG amplifer makes it vseful only in specific applications such as unity-gain ‘current amplifer or current follow ‘The common drain or source follower finds application a6 a voltage butler for connecting a high-fesistance ‘source to a low resistance load and ae the output ‘age in @ mulstage empliier ‘Summary of different configuration of FET is given below: 4) Commen-Source R, == 9, (7, IIRglR,) (gain of FET) + Rag tll Ry N R,(¥) Gommon-Drain or Source Follower: * Aye ao Gn yl Ry IR) (overal gain of 8 circu) (@) Commen-Source with Source Resistance : «ite el, Fo* Rs (unas 2 © The MOSFET High-frequency Modelis shown below: Re Be (Ro ft RL) Ae «facie FEE moet teach 1 T+ Gals Gil) Common Gate: (i) G5 Wee, + WEE, WG, “ (i) 1 sored . * A. =6,, (Roll) ON" Tain * Coal © Rew ‘© The figure of Merit for the high frequency operation of i the MOSFET as an amplifier is the unity-gain Aa" Tega Ry fnlRoll RD frequency t,