This invention discloses a method for automatically adjusting cell layout height and transistor width of one type ofMOS IC cells. The term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 219 days.
This invention discloses a method for automatically adjusting cell layout height and transistor width of one type ofMOS IC cells. The term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 219 days.
This invention discloses a method for automatically adjusting cell layout height and transistor width of one type ofMOS IC cells. The term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 219 days.