BD136/138/140

BD136/138/140
Medium Power Linear and Switching Applications
Complement to BD135, BD137 and BD139 respectively

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD136 : BD138 : BD140 : BD136 : BD138 : BD140 Value - 45 - 60 - 80 - 45 - 60 - 80 -5 - 1.5 - 3.0 - 0.5 12.5 1.25 150 - 55 ~ 150 Units V V V V V V V A A A W W C C

VCEO

Collector-Emitter Voltage

VEBO IC ICP IB PC PC TJ TSTG

Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature

Electrical Characteristics TC=25C unless otherwise noted

Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD136 : BD138 : BD140 Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 0.1 - 10 25 25 40 Typ. Max. Units V V V A A

ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on)

VCB = - 30V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 5mA VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 150mA IC = - 500mA, IB = - 50mA VCE = - 2V, IC = - 0.5A

250 - 0.5 -1 V V

* Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage

* Pulse Test: PW=350s, duty Cycle=2% Pulsed

hFE Classificntion
Classification hFE3 6 40 ~ 100 10 63 ~ 160 16 100 ~ 250

2000 Fairchild Semiconductor International

Rev. A, February 2000

BD136/138/140

Typical Characteristics

100 90 80

-500

VCE(sat)[mV], SATURATION VOLTAGE

VCE = -2V

-450 -400 -350 -300 -250 -200 -150 -100 -50 -0 -1E-3

hFE, DC CURRENT GAIN

70 60 50 40 30 20 10 0 -10

IC = 20 IB
-0.01 -0.1 -1

IC = 10

IB

-100

-1000

-10

IC[mA], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Collector-Emitter Saturation Voltage

-1.1

-10

VBE[V], BASE-EMITTER VOLTAGE

-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 -1E-3 -0.01 -0.01 -0.1 -1 -10 -1

IC[A], COLLECTOR CURRENT

t) (sa V BE 0 I B 1 IC = ) (on V V BE 5 =V CE

IC MAX. (Pulsed) IC MAX. (Continuous)

1 ms
-1

10us
0u 10 s

DC

-0.1

BD140

BD136

BD138

-10

-100

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Base-Emitter Voltage

Figure 4. Safe Operating Area

20.0

17.5

PC[W], POWER DISSIPATION

15.0

12.5

10.0

7.5

5.0

2.5

0.0 0 25 50
o

75

100

125

150

175

TC[ C], CASE TEMPERATURE

Figure 5. Power Derating

2000 Fairchild Semiconductor International

Rev. A, February 2000

BD136/138/140

Package Demensions

TO-126
0.10

3.90

8.00 0.30

3.25 0.20

14.20MAX

3.20 0.10

11.00

0.20

(1.00) 0.75 0.10 1.60 0.10 0.75 0.10

0.30

(0.50) 1.75 0.20

#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]

13.06

16.10

0.20

0.50 0.05

+0.10

Dimensions in Millimeters
2000 Fairchild Semiconductor International Rev. A, February 2000

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PRODUCT STATUS DEFINITIONS Definition of Terms

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2000 Fairchild Semiconductor International

Rev. E