EE 540 Quiz I Sep 10, 2007 50 minutes  n Cox = 115A/V 2 VDsatn = 0.63V  3 1 3 p Cox = 30A/V 2 |VDsat p | = 1.

1.0V  Wmin = 0.375 VDD = 2.5V Lmin = 0.25 VTn = |VTp | = 0.5V

1. In the adjacent gure of an NMOS inverter, (a) Assuming the transistor is minimum size, calculate R so that VOL = 0.1V. (b) Calculate Vo for Vi = VDD /2. (c) For each of the following cases, indicate whether the transistor will be in cutoff, triode, saturation or velocity saturation: (a) Vi = 0 (b) Vi = VDD /2 (c) Vi = VDD (d) Assuming a load capacitance CL = 3 f F is connected to the output, estimate the rise time t R assuming the input undergoes a step change from high to low. (e) Draw a similar circuit to implement an inverter using a PMOS transistor instead of NMOS. (f) Assuming the PMOS has W = Wmin , L = Lmin and the same value of R is used, estimate the values of VOH and VOL . 2. Consider a CMOS inverter with Wn = Wmin , Ln = Lmin , Wp = 3 Wmin , L p = Lmin . If the input to this inverter is slowly varied from 0 to VDD , estimate the peak short-circuit current that will be seen. At what input voltage is this likely to happen? 3. Implement each of the following Boolean functions in CMOS: (a) F = AB + C (b) G = AB + CD

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