Silicon Switching Diode

Applications Features

1N914 or 1N914-1

DO-35 Glass Package

Used in general purpose applications, where performance and switching speed are important.
DO-35 Glass Package

Six sigma quality Metallurgically bonded BKC's Sigma Bond plating for problem free solderability LL-34/35 MELF SMD available Full approval to Mil-S-19500/116 Available up to JANTXV levels "S" level screening available to SCDs
Maximum Ratings Peak Inverse Voltage Average Rectified Current Continuous Forward Current Peak Surge Current (tpeak = 1 sec.) Power Dissipation @ TL=50 C, L = 3/8" from body Storage & Operating Temperature Range Electrical Characteristics @ 25 oC* Breakdown Voltage @ Ir = 0.1 mA Reverse Leakage Current @ VR = 20 V Reverse Leakage (Vr =20 V, 150 oC) Reverse Leakage Current @ VR = 75 V Capacitance @ VR = 0 V, f = 1mHz Reverse Recovery Time (note 1) Forward Recovery Time (note 2) Symbol PIV IR IR IR CT trr Vfr
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L a dDa . e i 0. 1 - . 2 " 0 80 0 2 0. 5 - . 5 m m 4 80 5 8

1.0" 25.4 mm (Min.)

Length
0.120-.200" 3.05-5.08- m

Dia.
0.06-0.09"

15 - . 8m m . 322

Symbol PIV IAvg IFdc Ipeak Ptot TSt & Op

Value 100 (Min.) 75 300 0.5 250 -65 to +200

Unit Volts mAmps mAmps Amp mWatts

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Absolute Limits 100 (Min) 0.025 (Max) 50 (Max) 5.0 (Max) 4.0 (Max) 4.0 (Max) 2.5 (Max)

Unit Volts A A A pF nSecs Volts

Note 1: IF = 10 mA, RL = 100 Ohms, Vr = 6.0 Volts , Irr =1.0 mA Note 2: IF = 50 mA dc *UNLESS OTHERWISE SPECIFIED

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