op 2) . E221 As 1° Mid-Exam Fall 2010 { October 13, 2010 lame: KatTOZNDT Pavan Kumar vaRma SJSU ID: GOTER TIES Problem 1 (30pt) Silicon at T = 300K is doped with acceptor atoms at a concentration of Na = 7 x 10°? cm’. (a) Determine Er ~ Ey; (b) Calculate the concentration of additional acceptor atoms that must be added to move the Fermi level a distance kT closer to the valence band. SN Gwin! at ccom tenperetuee (Seok) Is Aa TX 10 orm > IN, {silicon)= 2 66R16 om © Ep Bye kT tn (®/nve) 4 ct mn (2402) 7 ( Tre? Aloe ot seen lemperole [Ki =0 oasa] 4 Qd0rIe FxKIe!® =(o 6254) be (3 exit) =e casy)(@2a4a) >[e- soaev aw] 2 Ep-Ey = (©:0259) tn (7 ~ ——fe v we 5 ° she! \ue - Sais v Oa |3e — pS Now KT = e0aStev Nou Fp iS “moved (kt)ev closea le Ev =D Ep-E = ead , — 0025 = o(8Tl 7 OST = obasq ba (See Wal aac’ (8 Boase) jaass Ne e fe m 3 > REE RIO _ .ay| x16 Mal * = 2 fe 3 2 Ma ast FIO = hT4 Gomaia Gn 1 Alddirorsl Acepla clems = Nar - MA Wd eo Le eProblem 2 (30pt) (a) Consider a sample of sificon at T = 300°K. Assume that the electron Concentration varies linearly with distance, as shown in the figure below. The diffusion current density is found to be Jy = 0.18Alcm’. i) the electron diffusion coefficient is D, = 25 cm/sec, determine the electron concentration at x = 0. fi) In the diagram indicate Te directions of electron diffusion flux and electron diffusion current. oy fy, dn ox a= dn — pad dere “Kas 6 PD n~ { Sx = 6 I ine (uresio'’ sesndt Cleclaer di Sy = Dodi covert °F diaection (b) The hole concentration in Gas at T = 300K varies as p(x) = 10° exp (-/L) om where Lis the measured in 22.5um. Ifthe hole diffusion coefficient is D,= 40 cm*/sec, i) Find the hole concentration at distance of x = 0 and x=5um; il) determine the hole diffusion current density at x = 0 and x = Sum. » ) Peedi" FY ea? L =a® Sam gk =e PCO