TM TT BI GING MN HC QUANG IN T V QUANG IN (Optoelectronic and Photoelectronic Devices) CHNG 1 C S QUANG IN T

1.1. MT S KHI NIM C BN 1)Tia (Ray): + ng truyn ca 1 tia bc x (beam of radiation) in t (invisible, ultraviolet, visible, infrared) + Thng c biu din bi mt mi tn hay ng thng, ch th ng khng gian m bc x s i qua. + Chm bc x phn k (expanding beam) c m t bi nhiu tia (ray). 2) chit sut v phn x: * Chit xut ca mi trng: n = c/v vi c: vn tc nh sang trong chn khng; v: vn tc truyn sng trong mi trng ang xt. * Gc khc x: sin =

n sin , vi n: chit xut ca mi trng cha tia ti; n'

n: chit xut ca mi trng khc x. * Vi liquid or glass: n = 1.3 1.8 Glass: n = 1.47 1.7; thy tinh tinh khit (grown glass) n = 1.51; (thy tinh quang hc n = 1.53) * Tinh th v bn dn: n > 1.8 * a phn x ni: (multiple internal reflection): gi hai mt song song ca mt mi trng, c mt s c trng sau: + Khong cch tch cc tia phn x ln mt v ln2 (2 ln lin tip) d ph thuc gc ti v chiu dy ca mi trng, v d : thu tinh quang hc (n=1,5) dy 1 cm c d 0,73cm khi gc ti 40o v d khi .
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+ Cng tia phn x v tia truyn qua:

I r1 (n'1) 2 = - T s cng tia phn x ln 1 tia ti: r = , khi <400 vi thy 2 I 0 (n'+1)
tinh. - Gi thit hu ht nng lng phn x tp trung cc chm tia phn x Ir1 v Ir2 th nng lng chm tia phn x cho bi r 2r 2r 2 + r 3 vi r : t s phn x hiu dng tng (net effective reflected ratio) - Khi s truyn qua: T = IT1/I0 = 1- r V d: Cho n= 1, n = 1.52, = 0 ,tm r , T, v tnh li gn ng. 3) Gng v b phn x li (retro_reflector) * Gng: - L linh kin quang phn x hu ht bc x ti. - C 1 mt c mi bng v c ph mt lp vt liu phn x vng bc sng quan tm. Vi nh sng kh kin, thng dng b mt ph bc hoc nhm; vi vng hng ngoi thng dng mt ph vng. Cc loi gng c bit c ph din mi . - Cc h gng quang hc tng gi l cc gng mt th nht, lp phn x trn mt hng v pha ngun. - Cc gng t, phng tm l gng mt th hai: mt phn x pha khc ca tia ti, khi c hai s phn x t mt glass v t mt ph sau. * B phn x li (retro-reflector) - L linh kin quang lun phn x tia bc x v chnh ng ti ca n - Thng c s dng trong cc h o khng tip xc (non-contact), khi b thu v ngun pht cch xa vt th cn theo ri. - C dng kim t thp, nhng ch c 3 mt, mt y hnh trn, cn gi l comer cubes. - Tia ti i vo mt y v b a phn x ni t 3 mt tam gic, ri ra khi mt y theo ng song song vi tia ti.
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- Cc mt tam gic c th c ph vt liu phn x hoc dng hin tng phn x ni ton phn (gc ti hn =420 vi chit sut 1,5). _________________________________________
1.2. CC DNG C GIAO THOA V NHIU X

1) Cc dng phn cc sng: phn loi tu theo kiu dao ng ca vector cng in trng; c cc dng sau (da vo vt u nt ca E ) - Phn cc thng: dao ng (trong mt phng y) theo phng c nh so vi trc y, z, sng lan truyn theo trc x. - Phn cc trn - Phn cc elip - Phn cc ngu nhin (t cc vt nng sng): l hn hp cc dng phn cc * Cc hin tng quang hc ph thuc vo tng tc in trng vi cc cu phn quang hc, do t trng thng khng cn quan tm. * Tn s mu sc; bin in trng sng * Tn s sng khng b thay i, nhng bin v dng phn cc c th b nh hng bi cc hiu ng truyn qua v phn x * Bc sng l thng s rt quan trng: = v/f 2)Tn sc: (chromatic dispersing) -Lng knh tn sc cho php quan st s thay i ca gc khc x theo tn s. Cc khi nim cn nm: Qui lut tn sc, sai sc dc, sai sc ng. 3)Nhiu x qua khe hp: Khi chiu nh sng n sc qua khe hp s to ra nh vi dng khe c cng phn b v 2 pha ca 2 mp khe trung tm. * Cc c trng quan trng l: -V tr ca cc nh (cc tiu-vn) -Khong cch ca cc cc tiu
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+V tr cc tiu: Dsin = m, vi m nguyn, D l rng khe hp +Nu khong cch t khe ti v tr y trn mn quan st xp x khong cch t khe ti mn quan st H R sin y/R , sai s <2% vi < 200 Khi y mR/D =>Khong cch vn: y = R/D => rng vn trung tm: W = 2y|m = 1 = 2 R/D rng cng W1/2 = 0.89 R/D * Vi nhiu x qua l hp: Cng thc tm cc cc tiu tng t nh khe hp nhng ch s nguyn m c thay bi cc ch s m khng nguyn. V tr vn ti: r = mR/D, tnh t tm, vi D l ng knh l hp, R l khong cch n mn thu. ng knh vn ti d = 2r * Cch t nhiu x: Kt hp hin tng giao thoa v nhiu x qua nhiu khe hp. +Vi trng hp 2 khe rng D, cch nhau on = a
Cc tiu giao thoa cho bi:

1 ca vn trung tm: 2

asin = (m + ), hay ay/R = (m + )

Khong cch 2 vn ti lin tip:

y = R/a ____________________________________

 1.3. CC LP PH V CC DNG C

1) Cc lp ph: l cc lp vt liu ph trn b mt ca cc cu phn quang hc, nhm tng cng hoc c nh cc c trng truyn qua v phn x. - Hiu qu ca lp ph thay i theo bc sng, gc ti v dng phn cc ca sng n. - Cc c trng quan trng ca lp ph l chiu dy v ng nht. - c im c hc: rt d b ph hu, do thng c lm sch nh thi kh kh p sut thp hoc dng nc kh ion, cn hoc thuc ty nh. * Lp ph tng truyn qua (hay chng phn x): gim phn x bin gia khng kh v thu tinh ci thin nt ca nh (nh hn ch nh o do a phn x). Thng dng MgF2 cho vng kh kin (c chit sut khong 1,38 550 nm) vi dy , cho tr pha gia sng phn x ln th nht (bin khng kh /lp ph ) v sng phn x ln 2 (bin lp ph / thu tinh ) = . Khi bin sng phn x s trit tiu v c th coi bin sng truyn qua t 100%. p dng cho thu knh, lng knh v b phn cc. H s phn x lc ny l:
1 4

r=

(n0 n g nc2 ) 2 (n0 n g + nc2 ) 2

, vi n0: chit sut khng kh; ng: chit sut thy tinh; nc: chit

sut lp ph. V d: cho ng =1.5, nc(MgF2) = 1.38, r = 1.4% vi bc sng 400-700 nm * C th dng nhiu lp ph chng phn x gim r n <0,3%. * Multilayer coating c th c thit k lm vic trong di rt rng ca bc sng hoc t c h s truyn qua ti a mt bc sng xc nh. * H s phn x tng theo gc ti. Cc gc ti c th chp nhn cho lp ph chng phn x l < 30o. * Cc lp ph tng phn x (dng cho gng phn x ) : - C th ph trn mt trc hoc mt trong ca gng. - C th l kim loi hoc in mi (Transparent oxides)
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- Thng dng lp ph in mi c chiu dy (chng oxi ho v tng bn) - Chiu dy

ph ln lp ph kim loi

nhm t tr pha 2 ca 2 ln phn x.

- Thng dng nhm, bc, vng (nhm+in mi cho vng cc tm; bc c h s phn x > 95% v vng > 98% trong vng kh kin v hng ngoi 3) Cc b lc quang hc a) Transmission bandpass interference filters: - B lc giao thoa thng di, cu to t t hp nhiu lp in mi. - Cu trc in hnh gm dy lun phin cc lp low index v high index c chiu dy /4 ng vai tr cc reflect stacks xen k cc lp rng dy /2 v cc lp coupling. * Lp phn cch (Lp trng)

2 1 c tc dng sao cho cc tia phn 4

+ cc lp

x ni trong lp trng ra khi lp s ng pha vi sng n ti bc sng mong mun. * rng bng 50% in hnh l 10-15 nm quanh tn s trung tm. * Nhc im: tn hao cao, h s suy hao ti tn s mong mun khong 70% trong min kh kin, v cn cao hn vng cc tm. b) Edge filter: thay i rt nhanh t truyn qua n phn x ti mt bc sng xc nh. - Ty thuc vo cu trc, c th truyn qua mt di kh rng trn hoc di bc sng bin xc nh. c) B lc hp th: iu khin h s truyn qua nh hp th bc x cc bc sng khng mong mun. C th dng knh mu hoc cc b lc hp th nhit (cn ch vn qu nhit)

d) Neutral density filter: l b suy gim tia s dng mt phn x iu khin h s truyn qua, thng dng vng kh kin v c h s suy hao gn nh khng i cho c vng. H s suy hao: D=log10 1
T

________________________
1.4. CC B PHN CC 1) Phng php

- Qu trnh phn x c th lm thay i dang phn cc sng. - Cc tia phn x chnh l cc tia ti bc x do dao ng ca cc ht ti in ti b mt phn x. Cc ht ti ny b kch thch bi in trng tia ti. - Kim loi c rt nhiu in t t do trn b mt, chng c th chuyn ng theo mi hng song song vi b mt, do c th ti bc x t do theo mi hng trong vng kh kin . - Vi thu tinh mt s hng in trng gy dao ng ht ti ti b mt, do ti bc x tia phn x, cn mt s hng khc s khng gy dao ng v ch truyn qua. -Hu ht in trng c nh hng theo cc gc va gy phn x va to truyn qua. * Mt phn cc ca sng phn cc thng: to bi trc y v tia phn x (trc y vung gc mt phn x). Xt trng hp mt phn cc cha trc x: a) Nu vector in trng E vung gc vi mt phn cc cc s) mt ton b vector E n b mt cng mt lc phn x mnh.
E n b mt tng phn

// trc z (gi l phn

gy dao ng cc i trn b

b) Nu vector E // mt phn cc (gi l phn cc p) gy dao ng ti thiu

E = Ep + Es

phn x yu, truyn qua mnh.

c) Nu E to gc 0 < < 90o vi mt phn cc: * Gc Brewster:( David Brewster)

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-Vi bt k mt phn cch gia hai mi trng c chit sut n0, n1, tn ti mt gc ti m ti h s phn x ca thnh phn phn cc p bng khng. Ti gc ti, tia phn x v tia khc x vung gc vi nhau, gi l gc Brewster, B. Ti gc B tia phn x b phn cc s hon ton . Nu tia ti phn cc ngu nhin v gc ti bng gc B, tia phn x s phn cc s v tia truyn qua c c thnh phn phn cc s v p. B = tg-1 (n1/n0), vi thy tinh quang hc B 57o.
2/ B phn cc

* Brewster Window: l dng n gin nht trong cc b phn cc, l tm mng c 2 mt song song t gc B so vi tia ti. Khong 14% vector phn cc s b phn x trn b mt v gn nh ton b vector phn cc p s truyn qua. * Li dy song song: t rt gn nhau so vi bc sng (bc sng phi ln ) - Vector in trng E song song dy s b kho (blocked). - Vector in trng E vung gc dy s cho qua (passed). - Thng dng tm Polyvinyl, khi cc chui cao phn t song song ng vai tr li dy. * B phn cc tinh th (hay lng chit): dng cc tinh th c vn tc truyn sng phn cc s v phn cc p khc nhau chit sut s khc nhau vi hai dng phn cc gc khc x khc nhau, to ra 2 tia : O-Ray: Khc x mnh (tia thng) E-Ray : khc x yu (tia d thng) -Quang trc ca tinh th phng tia ti m tia O v tia E c cng chit sut khng tch. _________________________________________
r r

1.5 BC X V BC X K 1/ Cc ngun bc x

-Ngun n sc: Lasers, LE Ds -Ngun ph lin tc: n nng sng -Ngun ph vch: n h quang * Incoherent or noise sources: n nng sng; LEDS; n h quang.
khng c quan h pha c nh gia cc sng bc x

* Coherent sources: Laser kh hoc laser bn dn. * n h quang: H quang hnh thnh gia cc in cc trong kh him khi p t in th ban u ln. Khi dng ion c thit lp trong h quang, in p gim mnh v h quang c duy tr. Ph pht x ph thuc loi kh. -Khi dng h quang i qua kh, cc in t trong cc ion kh s thay i mc nng lng v pht x photon c bc sng cho bi: = hc/E = 1.24 x 103 (eV.nm)/ E, vi E l chnh lch nng lng gia cc mc c php, ph thuc vo cc nguyn t bc sng bc x bi mi nguyn t l c nh. *n hunh quang: l trng hp ring ca n h quang, khi ng n c ph bt hunh quang (ch yu l phosphor). Bt hunh quang s ti bc x trong vng kh kin khi b chiu x bi nng lng ti cc bc sng ngoi vng kh kin. Trong n hunh quang, h quang c to ra trong hi thu ngn. Hi thu ngn pht x photon vng kh kin v cc tm. Cc tia cc tm s to ra hunh quang. -Vi cng 1 in nng cung cp, n hunh quang pht x nng lng cao hn n nng sng *Cc vng bc x: Extreme UV (ultraviolet) Far UV Near UV Visible Near IR (infrared) 10 200 (nm) 200 - 300 300 380 380 - 770 770 1500
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Middle IR Far IR Far- Far IR 40000 1000 000 Qe 2) Cc khi nim c bn: - Radiant energy (nng lng bc x): - Radiant Flux (dng bc x) lng): ca ngun c kim tra: - Radiant Intensity (cng bc x): vi Ie = e/4 = HeR2.

1500 6000 6000 40000

Joule (J) Watt (W (W/m2) (W/m2) (W/sr), Steradian (sr)

e = (dQe/dt)|qua din dA He = d e/dA Me = d e/dA Ie = d e/d d = dA/R2

- Flux density (mt dng quang ti / vdt) cn gi l irradiance ( ri nng - Radiant Emittance ( trng nng lng) l mt dng kch thch trn b mt

Ch trng hp ngun im ng hng: - Radiance (cng sut bc x trn n v gc c v trn n v din tch) L = d e/ddAcos = dQe/d - Spectral Emittance (ph kch thch, ri ph) W = dMe/ d - Spectral Radiant Intensity: - Spectral Radiance: I = dIe/ d L = dLe/ d (W/m2.nm) (W/sr.nm) (W/sr.m2.nm) (W/sr.m2) (W/nm) - Spectral Radiant Power (cng sut bc x trn n v bc sng):

3) Nng sng v vt en (Incandescent and Blackbodies) - Cc cht rn v cht lng bc x nh sng kh kin khi nhit 500oc - B mt hp th ton b nng lng bc x n mt cch l tng gi l vt en -Vt bc x nng sng c c trng tng t nh vt en -Bn cht bc x t vt en c nghin cu bi Max Planck: Nng lng bc x t vt en phn b trong khong tn s rng, theo dng ton hc xc nh v thay i theo nhit ca vt en
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- trng nng lng tng cng Me din tch gii hn bi ng phn b nng lng theo bc sng :
2 1

M e = W d ,
vi W = C1-5/(eC2/- 1), trong C1 = 3.74 x 10-16W.m2, C2 = 1.4385 x 10-2m.K - ri nng lng tng cng:
M e = W d = T 4 , vi = 5.672 x 10-8 (W/m2K4)
0

Tnh c bc sng ng vi ri ph cc i Tnh c ri nng lng ca ngun c din tch A * Nng sng ca vt th thc - Vt th thc khng bc x nhiu cng sut nh vt en cng mt nhit - T s gia trng nng thc trn trng nng ca vt en l tng gi l pht x (emissivity, e) T s cng sut hp th ca vt vi cng sut hp th ca vt en l tng: a. Me = e T4, e = a Cng sut hp th t cng sut n: e = aHA V d : Xt n nng sng c vt bc x nhit T, t trong v c ht chn khng, nhit lm vic n nh ca v l T1 Gi P l cng sut cung cp cho vt bc x = cng sut bc x ton phn
e : cng sut pht bi vt bc x

Pa :Cng sut hp th bi vt bc x, do phn x nng lng t v n - Khi nhit hot ng cn bng t c, th cng sut thot khi v n phi bng cng sut cung cp, t tnh c: P = Ae (T4 T41), vi l hng s vt l = 5.672 x 10-8 WK-4/cm2. * Lu : Trong thc t vi mt vt liu, mt nhit cho trc, h s pht x, e, thay i theo bc sng.
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- Vi 1 vt liu cho trc v mt bc sng c nh th e l hm s ca nhit . - Nhit mu (Color temperature) ca 1 ngun sng l nhit tuyt i m ti mt vt en khi hot ng s c mt cn bng mu ging nh ngun sng ________________ Bi tp v d: cho bng n c din tch dy tc: 0,1cm2; e = 0,35, nhit dy tc l 2700oK, nhit v n l 100oC(373oK). Tm cng sut cn cung cp. S:10,5W

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CHNG 2 PHP TRC QUANG, N NNG SNG V N KH 2.1 H TRC QUANG 1) Gii thiu :

- Cc h o nh sng da trn c s m phng p ng ca mt ngi vi nh sng. - Trc quang l php o cc i lng lin quan vi nh sng trong vng 400700 nm. - Php trc quang v quang k s dng cc i lng v n v khc vi bc x k. - Cc h trc quang da trn c s cc b thu c p ng vi nng lng bc x theo kiu nh p ng ca mt ngi. - Dng mt s rt ln d liu thng k to ra ng cong chun m t p ng ph ca mt, gi l ng quan st chun (hay ng trng cho quan st chun) (Standard observer curve hay Luminosity curve for the Standard observer) hay cn gi l ng cong CIE (vit tt tn ting Php Commision International de lEclairage ca Hi ng International Commision on Illumination). * Mt s lu trn th ng cong chun ( trng tng i / bc sng): - Bc sng 555nm l sng nht - Mt ngun c th bc x mt nng lng bc x nh nhau 555nm v 610nm, s c sng 0,5 khi hot ng 610nm so vi sng 1 khi hot ng 555 nm * Dng cng sut quang c o theo Lumen v k hiu FV. Lumen c ngha tng t nh n v ca cng sut Watt nhng dng trong vng bc sng kh kin * Quan h gia dng cng sut bc x v dng cng sut quang : FV = e x 683(lm/W)x Vi : FV : Dng quang (lumen)
2 : Dng bc x (Watt)

683 lm/W : Hng s vt l

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 : trng tng i bc sng ang xt BNG TRNG TNG I ( = 1 Ti bc sng 555 nm) Bc sng (nm) trng tng i Bc sng (nm) trng tng i

410 420 430 443 450 460 470 480 490 500 510 520 530 540 550 560 * Cc c trng c bn:

0,001 0,004 0.012 0,023 0,038 0,060 0,091 0,193 0,208 0,323 0,503 0,710 0,862 0,954 0,995 0,995

570 585 595 600 610 621 630 640 650 660 670 680 690 700 710 720

0,952 0,870 0,757 0,631 0,503 0,381 0,265 0,175 0,107 0,061 0,032 0,017 0,008 0,004 0,002 0,001

- Nng lng quang trng (Luminous Energy): Qv - Dng quang trng: Fv = dQv/dt - Mt dng quang trng chiu x : Ev = dFv/dA - Kch thch quang trng: Mv = dFv/dA - quang trng: Lv = dFv/ ddAcos

lumen.second (lm.s) lumen (lm) lm/m2 lm/m2 lm/sr.m2

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- Cng quang trng ( sng): Iv = dFv/d =Ev.R2 lm/sr

* Thng khng d chuyn i mt dng bc x (W/m2) thnh mt dng quang trng (lm/m2). Vic ny ch d dng khi ngun l n sc v bc sng bit. thu c kt qu nhanh hn, ngi ta dng u thu quang - Mt dng quang trng c th biu din theo n v footcandle (fc) 1 footcandle = 1 lm/ft2.
Bng chuyn i

To: fc (lm/ft2) lux (lm/m2) phot (lm/cm2)

From: fc 1 0.0929 929 lux 10.7639 1 1x10-4 phot 1.08x10-3 1x10-4 1

2) Luminance ( trng, sng Brightness) v Radiance (cng sut bc x trn n v gc c v trn n v din tch)
- Luminance l thut ng dng m t bc x kh kin t mt b mt c kch

thc ng k so vi khong cch quan st v so vi u thu (php o tng ng gi l php o trng gn) trng ca mt ngun c cng I() ti v tr ca u thu: Lv = I ()/atcos I () : Cng bc x, l hm s theo (gc gia tia ti v php tuyn ca din tch b chiu x) at : Din tch ca ngun bc x.
Cc n v o trng:

lm/m2sr = cd/m2 nit Stilb cd/cm2 Lambert (1/)stilb

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millilambert apostilb Footlamberrt (1/)cd/ft2

Bng cc h s chuyn i

stilb stilb nit lambert footlamberrt 1 10000

nit 0,0001 1
/10000

lambert 1/ 10000/ 1 0,9294

footlamberrt 0,00034 3,426 0,00012 1

2919

0,2919

-------------------------------------------2.2 N NNG SNG

1) n nng sng : - c dng cn chnh, chiu x v chiu nh v dng lm n nhy. Thng dng dy Tungsten, Tungsten Halogen v Carbon. - Phn b ca dy tc rt ging vi ca vt en cng nhit mu - in ttr sut (v in tr) ca dy tc thay i rt nhanh theo nhit - Vt liu lm bng n nh hng n nh sng cc tm. Bng thch anh cho qua gn nh ton b tia cc tm, trong khi thy tinh s lm suy yu cc bc sng < 320 nm - Cng sut in cung cp cho n : P ~ AT4 vi A l din tch b mt bc x, T l nhit mu * Data sheet v d : Model UV 40Lamp
Specification

Lamp Wavelength range Operating Current

Deuterium (40 Watts) 200 to 400 nm 500mA

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Irradiance @ 250nm (30cm) Uncertainty Long term Stability

0,2 W/cm2 nm (typ.)

3 to 10%

50 hours for less than 2% change

V d: Cho cc thng s ph ca ng cong trng ph: , W

Tm trng nng lng xp x gia 250 v 340 nm Gii: Tnh phn din tch gii hn ng W v trc bc sng
Thng s MSCP (Mean Spherical Candlepower - cng sng): Gi tr

trung bnh ca cng trng o theo mi hng MSCP = Fv/4 Fv: Dng quang trng o theo Lumen * nh gi c trng hot ng ca n khi bit gi tr danh nh v gi tr thc t V d : Cho bng d liu ca n: V0, I0, MSCP, Life (hours), Tm cc c trng mi ti in p lm vic 84V = VN 2) n nhy: (thng dng trong ng dng chp nh) - C dy tc nng chy khi nhy - Thng s Light output: thi gian sng t cc i - Cc thng s ca c tuyn ra tiu biu: + T0 : Time to peak + T : Pulsse Width + D : Duration of pulse + Luminous Energy (lumen second) = D(s) x (Luminousoutyout)peak --------------------------------------------------------

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2.3 N KH 1) Gii thiu: * Hiu ng quang in: Pht x in t t vt rn (thng l kim loi hoc

Oxide) khi vt liu b chiu sng bi bc x (1887- Heinrich Hertz) c 3 c trng c bn : 1) S in t b pht x, xc nh dng in, t l vi cng bc x ti mt bc sng c nh. 2) Mi vt liu c mt bc sng ngng ca bc x. Nu bc x ti c bc sng > bc sng ngng th s khng c in t b pht x. 3) Vn tc ti a ca cc in t pht x khng ph thuc vo cng bc x m t l nghch vi bc sng bc x. - Cc c trng 2 v 3 dn ti khi nim photon (hay lng t nh sng) + Nng lng photon : E = hf = hc/ vi h : hng s Planck, + ng nng ca in t b kch thch: (1/2)mv2 = hf - W Vi W : Nng lng cn thit in t thot khi b mt gi l cng thot in t.
* Hp th chn lc: Khi chm nh sng trng i qua mi trng cha kh p sut

f : Tn s Hz

thp th chm nh sng thu c trn ph k th hin mt s bc sng b suy gim ng k. - Tng t, nu kh p sut thp pht x th cho ph vch c v tr cc vch tng t v tr b suy gim hin tng hp th. Mi loi kh c ph vch khc nhau. - Khi p sut kh tng ln th bc x v hp th xy ra trong di rng hn cc bc sng v gi tr ca cc bc sng thay i nh.
* M hnh Bohr

- p sut thp, cc nguyn t kh biu hin gn nh cc nguyn t c lp - Trong cc in t chuyn ng trn cc qu o c php xc nh tng ng vi cc mc nng lng ri rc v cc nng lng ion ha ri rc EI
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- Vi nguyn t Hydro: EI = E0/N2, vi EI: nng lng ion ha, l mc nng lng cung cp in t chuyn t mt qu o no ra khng gian t do, E0: Hng s nng lng, N : S nguyn gi l s qu o Khi hp th nng lng cha mc EI th in t s chuyn ln mc nng lng cao hn vi iu kin:
E = Ea = Eb = E0/N2a - E0/N2b, Trong E: S thay i nng lng gia mc

a v b Ea : Nng lng ion ha ca mc a Eb : Nng lng ion ha ca mc b Na : S qu o ca mc a Nb : S qu o ca mc b - Nu nng lng nhn c ch chuyn in t ln mt mc cao hn mc kch thch th di iu kin khng c nng lng no c nhn thm, n s chuyn v trng thi nn sau mt thi gian xc nh v gii phng nng lng. Vic chuyn t trng thi kch thch v trng thi nn c th trc tip hoc qua cc mc trung gian V d: t trng thi 4 n 1 c th c 6 chuyn mc kh d tng ng vi cc nng lng gii phng E = E0(135/144), E0(128/144), E0(108/144), E0(27/144), E0(20/144), E0(7/144). - Khi p sut kh tng hoc khi kh cha cc phn t c th s dng m hnh Bohk nhng cc mc nng lng n l ri rc c php cn c thay bng cc di (band) nng lng c php. Do , ph hp th v pht x s xut hin cc vng ph thay cho ph vch ri rc.
2) Hot ng ca n kh :

* Cc thnh phn chnh : V n, anode (+), cathode (-), gas * Qu trnh lm vic : 1- Mt in p cao c t vo 2 u 2- Gia tc cc ion v cc e- n ng nng ln
19

3- Qu trnh va chm to ra thm nhiu ion v hnh thnh s phng in pht x 4- Dng phng in t n mt gi tr xc nh v st p qua n gim n mt gi tr danh nh - Thi gian n nh 30 pht. - C th c loi n m kh p sut thp c bay hi t cht lng hoc rn. - Thi gian ln (turn-on time) ca loi ny thng lu hn. Cc loi n ny c th s dng mt loi kh th hai to ra s phng in v t nng cht lng hoc cht rn. * C 4 qu trnh (giai on) ca s phng in gia cc in cc trong kh p sut thp: - Leakage Stage: Dn in do in t t do v ion kh c mt lc u trong kh do s hp th nng lng bc x t ngoi n. dn gn nh khng i trong khong in p Ea Eb, dng rt b, phng in t pht. - Mc in p Eb l mc ion ha, to ra hiu ng thc l dng tng ng k trong khong in p t Eb Ec. in p Ec s thay i in p vng cathode rt ln v gia tc mnh cc ion dng v pha cathode lm pht x in t t cathode. Khi qu trnh ny chim u th, n c coi l lm vic nh thng v Ec gi l th mi - Glow discharge (phng in pht sng) l giai on dn in th nh thng, dng tng vt, th gn nh khng i, y l giai on lm vic khng n nh v cn duy tr dng in. Bc x gn nh ng u trn chiu di ca n. - Giai on h quang: Mt dng cao v nhit cao, n lm vic ch nng sng v c c trng in tr m.

20

CHNG III. 3.1. LASER KH

LASER

-Laser vit tt ca light amplification by stimulated emission, ngha l K nh sng nh pht x kch thch. -Phn t trung tm ca laser kh l mt ng kh (gn ging vi n kh) l ni m s pht x kch thch v khuych i nh sng xy ra. - ng kh p sut thp c kch thch pht x nh cao p dc hoc ngun th RF. C mt s dng in hnh: a) dc current flow, in hnh nh n Low-power helium-neon laser c th to h quang 7000V v th hot ng 1800V; dng hoat ng 5mA; bc x cng sut 3mW vi cng sut vo 9W. b) RF capacitive coupled current flow, cc nguyn t b kick thch bi in hoc t trng bin tin nhanh tn s RF (20_30 kHz). in p RF nh hn nhiu so vi in p dc, nhng dng li cao hn nhiu. c) RF inductive coupling - Cc phn t quang trng khc l cc gng phn x t hai u ca ng kh kch thch. Mt trong hai gng c thit k cho php mt phn nh sng pht x c truyn qua v coi nh l u ra ca laser. Cc tia phn x gy ra qu trnh khuch i bc x c kch thch do cc nguyn t hp th photon h. - Laser kh c th cha hai hoc nhiu loi kh, in trng p t s kch thch mt trong cc loi kh ny. Va chm ca kh kch thch vi kh khc dn n trng thi kch thch v pht x. Chng hn laser helium-neon: + Qu trnh phng in lm cho cc in t ca nguyn t helium chuyn ln mc nng lng cao hn gi l trng thi na bn. + Qua qu trnh va chm, cc nguyn t helium kch thch tip tc lm cho cc nguyn t neon b kch thch. + Khi qu trnh dn in c xc lp, a s cc nhuyn t kh s dng na bn: iu kin ny c gi l o ln mt population inversion(v vi kh khng b kch thch, a s nguyn t trng thi nn).
21

+ Cc in t ca cc nguyn t neon b kich thch c th to ra cc chuyn mc khc nhau v bc x nng lng vi cc bc sng khc nhau. + Bc x t cc nguyn t neon 1 bc sng xc nh s c tng cng nh phn x t cc gng v nh bc x bc sng ny s chim u th. + Hot ng lin tc ca laser s t c khi cc gng phn x hai u ng to thnh 1 hc cng hng, c tc dng gi hu ht photon to ra qu trnh a phn x trong ng, qua tng xc sut va chm ca photon vi nguyn t neon. ______________________________________________

22

3.2 CC NGUYN L LASER TNG QUT

Hin tng laser xy ra do s tng tc ca hai h thng: - H nguyn t c chuyn mc nng lng ca in t lm pht sinh photon. - Hc cng hng to bi cc gng u cui .
a) Tng tc gia bc x vi h nguyn t

- 1 photon s pht sinh khi 1in t chuyn t 1 mc nng lng cao xung 1 mc nng lng thp hn: hf = E2 - E1 - Trong thc t c s m rng vch ph do 2 qu trnh sau: + Homogeneous broadening: ctrng cho tt c cc nguyn t trong h, l hm ca thi gian sng hu hn ca trng thi bc x , nu qu trnh ny l duy nht khi laser lm vic, th phn b vch bc x c cho bi : A() = K/[( 0)2 + (1/)2] A(): bin bc x ti tn s K: h s t l 0 = 2(E2 E1)/h + Inhomogeneous broadening: vch ph b m rng do cc hiu ng nguyn t ring bit. Trong tinh th cc nguyn t khc nhau c th c cc chuyn mc nng lng khc nhau t do cc nguyn t ln cn. Cc nguyn t trong kh chuyn ng theo cc hng khc nhau vi cc vn tc khc nhau, do gy ra cc dch chuyn Doppler khc nhau ln tn s: f = f0 + f0/c, vi f0 = (E2 E1)/h thnh phn vn tc theo phng ngi quan st rng bn ph gy bi hiu ng Doppler l: f = 2f0(KT/M)1/2, vi K = const. = 165,8 x 10-15 (amu/K), T: nhit ca hc, M: khi lng nguyn t tnh theo amu.
23

* Qu trnh ny chim u th vi laser kh; laser Helium-neon c rng bn ph 1.1 x 109 Hz n 1.4 x 109 Hz * Ph ca laser thc c th b nh hng do tn hao phn x bi gng v tn x khng kh
b) Hc cng hng to bi cc gng u cui

-iu kin cng hng: hnh trnh qua hc 2L = s nguyn ln bc sng 2L = M

C rt nhiu tn s laser c php, cch nhau cc khong

f = c/2L, gi l cc mode hc cng hng (cavity modes)

Ngi thit k laser phi ti u ho thit k cho tn s mong mun nh vic

iu khin hn hp kh, cc c trng kch thch v phn x ca hc v c th dng b lc, hoc tng khong cch gia cc gng (tng L). - Trong thc t ch c nhng chuyn mc nng lng vi thi gian sng tng i ln mi c th to ra cc vch ph c th s dng c. -Nng lng laesr kh dng nhn c khi li ca hc c iu chnh chn 1 trong cc vch laser kh d. Vi laser kh, do s m rng doppler, chiu di ca hc s xc nh s cng hng hc cha trong 1 vch ph. li u ra ca laser lc ny s l tch ca li vch ph m rng vi cavity modes. Pht x ng thi ny c gi l longitudinal modes. -Ngoi ra, hc laser c th to ra mt s modes khng gian hay TEM modes. Trong thc t, mode mong mun l TEM00, l tia n vi phn b nng lng theo phn b Gauss. c) Kch thuc vt laser -Bc x laser c th dng lin tc (continuous_wave laser) hoc dng xung (pulsed laser). - Bc x laser c th c hi t thnh vt nh tng mt dng quang. - Kch thc vt laser c th c hi t l hm ca ng knh chm laser:
24

D = (16/3)(F/D0) vi F: tiu c ca thu knh D0: rng chm laser tnh t im c cng 13.5% cng cc i. - Cng sut chm laser c th b gim bi 1 ming trn c ng knh nh hn ng knh chm laser .T s dng truyn qua / dng ti l: e/i = 1 exp(-2D2/w2), vi D: ng knh ming trn w: ng knh chm tia ti, c xc nh nh D0. _______________________________________________
3.3 LASER BN DN 1/ Gii thiu

* Cc cu phn c bn: - Photon source: ti hp in t l trng pht sinh photon. - Feedback: Cc photon c a ngc li vo min ti hp nh phn x to ra pht x kch thch - Energy source: dng tim ht ti, cung cp cng sut * Chuyn mc nng lng xy ra gia vng dn v vng ho tr * Bn dn vng cm thng (direct bandgap): cc i vng ho tr v cc tiu vng dn cng 1 gi tr xung lng in t chuyn t cc tiu vng dn v cc i vng ho tr m khng thay i xung lng trao i nng lng gia cc in t v cc photon feedback xy ra d hn v khng cn trao i xung lng. Cc vt liu: GaAs, InAs. * Bn dn vng cm xin: cc i v cc tiu cc vng khng cng gi tr xung lng xy ra hp th hay pht x photon th s chnh lch xung lng gia trng thi u v cui phi c trao i vi dao ng mng tinh th s trao i nng lng gia in t v Photon phi qua qu trnh 2 bc khng thch hp cho c ch laser feedback (tng t vi tnh hung mt mch c li vng qu thp, khng duy tr dao ng). Cc vt liu: Si, Ge,GaP c vng cm xin.
25

* Trng thi o ln mt : a s cc mc nng lng c php gn y vng dn b chim bi e- v a s cc trng thi c php gn nh vng ho tr b trng e- hay b chim bi l trng. - Cc in t chuyn mc t vng dn v vng ho tr c th do ti hp t pht hoc do pht x kch thch - Cng sut ngoi cung cp c tc dng thay th cc in t trong vng dn - ch dng thp: qu trnh ti hp t pht chim u th tng t LED - Khi dng tng, s in t c tim vo min ti hp ca chuyn tip PN tng tng s photon pht x -C th phn x feed back hu ht s photon ny vo chuyn tip. Khi dng tim in t ch yu dng thay th cc in t thay i trng thi do pht x kich thch. Chuyn tip bt u pht x 1 khong bc sng rt hp bc x laser. -Dng ngng: bt u qu trnh laser, + ph thuc vt liu ch to diode laser + ph thuc mc pha tp + dng hnh hc ca chuyn tip + nhit linh kin (rt quan trng ) * Homojunction: min p v n cng loi vt liu, hot ng dng thun rt ln ch lm vic khi c lm lnh vi nit lng. * Diode laser thc: c 1 hoc 2 heterostructure (nhiu loi vt liu) sp xp theo kiu pn lun phin i loi vt liu. + u im c th fine-tune cc rng vng cm iu chnh cc c trng ph ca laser. V cc lp vt liu khc nhau rt mng v gn nhau v cc c trng vt l nn cc c trng in ca chng s tng tc v thit lp cc di vng cm xc nh cho cu trc ton b.
2) c trng c bn

- Cc laser diode hot ng ch dng tim thng ch to t GaAs v GaAlAs, hot ng bc sng di 1180-1580 nm - Diode laser n thng c ch tunr-on trong khong 1,5 - 2,5 V
26

- ch xung, th phn cc thun short-term trong khong 5 25 V - Mt s lu trong th s ph thuc ca cng sut bc x v th phn cc thun vo dng thun ca diode laser GaAlAs: + Nhit c gi khng i + Cng sut bc x tng nh trong khong 0 18 mA + Trong khong ny linh kin hot ng tng t LED. + Trn 1,8 mA cng sut bc x tng vt, diode hot ng nh 1 laser + Trong khong 20 30 mA cng sut bc x tng gn nh tuyn tnh theo dng vi dc c gi l hiu sut vi phn. + Dng ngng nhy vi nhit Ith = I0exp[(T T0)/K], K l hng s ca linh kin. - Laser diodes thng lm vic ch xung. thi gian chuyn mch nhanh v bin bc x ln, cc diode thng c phn cc bi 1dng > dng

ngng. Tn hiu dng xung l lng gia tng ca dng cn thit t c mc cng sut bc x xc nh + Yu cu khi hot ng: - nhit ca linh kin phi c iu khin - hoc dng phn cc phi thay i c, p ng vi mi dng ngng cho mi nhit lm vic. + Tuy nhin, nu dng phn cc tng cng thng nhit rt cao. + sch ph v gi tr ca bc sng u th ph thuc dng qua diode v nhit lm vic. Khi dng thay i, c 2 hin tng xy ra: 1-Ti gi tr dng thp, gn dng ngng, ph bc x bao gm cc vch ph phn b trong mt vng bc sng do longitudinal mode v cu trc vng ca bn dn. linh kin nng hn cn dng phn cc ln hn t cng sut mong mun, do trang thi lm vic n nh cui

27

2- Khi dng tng s vch ph gim v tm ca phn b b dch v pha bc sng di hn do c trng feedback (tp trung) v nhit tng (di bc sng). Bc sng trung tm c th b dch t 0,1 20 nm, tu loi diode. * Vn nhiu: + Modal noise: pht sinh do longitudinal mode + Reflection noise: do bc x b phn x ngc vo knh laser t cc mt bn * Ph laser: c quan st trong thi gian rt di so vi tc thay i xy ra trong diode. C 2 cch gii thch ph laser: (1) Laser l b pht x a mode: bc x ng thi tt c cc thnh phn ph, hin th vi bin tng i xc nh. (2) Laser l linh kin n mode: bc x ch mt bc sng ti mt thi im cho trc bt k. Cc thnh phn ph quan st th hin s tng hp ca tt c cc bc sng ring r m diode bc x trong qu trnh quan st. Bin ca cc thnh phn ph th hin tn sut xy ra ca n trong thi gian quan st. -S thay i bc sng trong trng hp (2) gi l mode hop (nhy mode). Nhy mode c th gy r s thay i bin u ra ca quan h do s suy hao v vn tc truyn sng khc nhau vi cc bc sng khc nhau. Nhy mode l hin tng ngu nhin v gy ra s thay i ngu nhin ca bin bc x v to ra nhiu bin . -Trong trng hp a mode (1) cc thnh phn ph lun tn ti, nhng cng sut n nh cho chng c th thay i theo thi im. My phn tch ph ch ra bin trung bnh theo thi gian ca cc thnh phn ph. u ra ca quang h cng thay i theo thi gian * Cc yu t nh hng n tui th ca Laser 1/ Lp t v th nghim 2/ Cc xung in t pht sinh bn ngoi trong thi gian ngn 3/ Mc dng 4/ Nhit 5/ Mc bc x cc i
28

6/ S gi ho linh kin Cc yu t (1) v (2) do kch thc linh kin rt nh nghim v t mi trng d b ph hu bi xung p hoc xung dng, hoc qu trnh phng tnh in ngn xy ra khi lp t, th ch vn ni t cho ngi, phng tin v thit b. Cc mch in lin quan cn c bo v v lc t. - Thi gian sng ca laser c th gim 4 ln khi mt dng lm vic tng 2 ln - Mc bc x cao thng lm suy gim cc c trng phn x ca cc mt phn x ca laser do hin tng n mn. - Khi diode c ch to, c cc khuyt tt rt nh trong vt liu ca knh laser,ca cc lp bn dn, cc mt phn x v cc tip xc in. Cc khuyt tt ny s ln dn theo thi gian s dng. * Laser data sheets: v d loi LT015MD/MF
3) iu khin Laser

- Cng sut bc x, bc sng, dng hot ng v thi gian s dng ca Laser u thay i theo nhit , do cn c cc vng iu khin in v iu khin nhit. + Vng iu khin in: chng cc xung dng v th ph hy iu ch dng laser iu chnh dng ngng + Vng iu khin nhit: tip xc nhit vi v laser thng cha linh kin bm nhit bn dn gi l thermoelectric cooler hoc Peltier device c tc dng thu nhit (bm nhit t laser ra v ngoi ca u laser). - Bm nhit in: dng in t chuyn nhit lng t mt hp th nhit ra mt truyn nhit thng qua dy cc bn dn BiTe (Bismuth Telluride) loi N v P ghp lun phin vi kim loi tip xc vi cc mt truyn nhit v mt hp th nhit. Ngun in ngoi, E, to ra dng in t theo chiu t N P v sau t P N.
29

Khi cc e- chuyn ng t P

N, chng phi chuyn t mt trng thi nng lng

thp ti 1 trng thi nng lng cao hn, do cc e- s cn hp th nng lng t pha cold surface v nh nhit lng cho pha hot surface chuyn mc khi t N P. __________________o0o___________________

30

CHNG IV PHOTODETECTORS 4.1 VACUUM PHOTODETECTORS

- Dng hiu ng quang in to ra dng v p t l vi mt dng cng sut sng ti. - nhy cao, p ng nhanh . - Ch yu dng trong phng th nghim. 1) Nguyn l - Cathode cu to t b mt kim loi cong c phu lp oxide. - Anode: ng mng t ti tiu im ca cathode. - Pht x in t t b mt cathode i hi nng lng photon n phi ko in t ra khi cc lc lin kt ca e- vi nguyn t v vi b mt cathode (do cc in tch dng to ra bi cc in t ri khi b mt). Ekmax = hf - W W: cng thot in t h: hng s planck f: tn s photon 2) Cc dc trng c bn - Stopping voltage: th p t lm trit tiu Ek max in t t cathode, l tn s ng vi Ek= 0. * c trng thun: - Tn tai in p knee voltage m trn dng s bo ho, photodiode hot ng trong min ny. -Dng bo ho t l thun vi mt dng quang ti H. -Th stop ging nhau vi cc mt dng quang ti khc nhau (ch l hm ca tn s photon) * c tuyn ra: c ti dng tnh gn ng dng qua ng IT, th ri trn ng VT khi bit ti R v mt dng quang (lm) * Cc tnh cht c bn ca vacuum photodetector:
31

dn = 0

- Tn s ngng: khi sng n c tn s nh hn tn s ngng s khng pht x

1/ Dng photodiode tng tuyn tnh theo mt dng quang nu tr ti nh. 2/ Trng hp l tng, nhy dng SI = ti 3/ Cc mch thc t lch khi l tng khi dng ln v b . 4/ Th anode gim khi mt dng quang tng. 5/ nhy in p Sv =
V t l vi tr ti . Fv I = const. v khng ph thuc Fv

6/ Vi tr ti RL nh, nhy in p gn khng i v dng, th thay i gn tuyn tnh theo mt dng quang. _________________________________________

32

 4.2 THERMAL DETECTORS 1) Gii thiu: l lp linh kin hot ng nh chuyn i nng lng bc x ti

thnh nhit nng v sau thnh cc i lng in c th o c. - Dng cc b mc ph c c trng gn vi vt en l tng. - ng dng lm u thu bc x trong phng th nghim v trong cc thit b cn chnh. - C 4 loi chnh: (1) Bolometer (x nhit k) (2) Thermistors (tecmisto) (3) Thermopiles (pin nhit in, ct nhit in) (4) Pyroelectric detector (u thu ha in) (1) v (2) thay i in tr khi chiu x. (3) c th u cui t l vi cng chiu x, nhng c tn s cutoff thp khng thch hp theo ri s thay i nhanh ca bc x. (4) c th u cui thay i theo s thay i ca bc x. (2) v (3) c cu trc vng chc thch hp cho cc ng dng cng nghip
2) Cc c trng chung: nhy, p ng ph, hng s thi gian, cng sut

nhiu tng ng (NEP: noise equivalent power), kh nng thu, kh nng thu chun ha D*, gc thu.
a) nhy: t s u ra in ca detector/u vo quang, thng cho di dng

amperes/watt hoc volts/watt ca cng sut n. R = dr/de vi dr l s gia ca dng hoc th u thu, de l s gia ca mt dng ti u thu.
b) p ng ph (c trng nhy ph): quan h gia d nhy bc x v bc

sng ca bc x ti di cng iu kin chiu x (tia ti chun trc). - Cc b thu nhit c p ng ph bng phng, rng, gii hn bi c trng truyn qua ca ca s dng v u thu. Cc u thu bn dn v n chn khng c p ng ph ph thuc vt liu ch to u thu.
33

c) Hng s thi gian: m t p ng bc ca u thu ca u thu vi bc thay

i ca mc chiu x (dng chm tia ngt on nh tm chn quay hoc nh iu bin cng sut ngun). u thu s biu hin nh mch lc thng thp v cho li ra khc nhau vi tc iu bin hoc tc ngt khc nhau. C th c trng ha bi thi gian ln. - Nu qu trnh qu c dng Aexp(-t/T ) th T l hng s thi gian vi u ra ca 1 h thng bc 1 b kich thch bi xung, hng s thi gian T l thi gian cn t 63,2 % ton b sn ln hoc sng xung . - Hng s thi gan i khi cn gi l thi gian 1/e hoc (1- 1/e) - Trn gin Bode ca b lc thng cp bc 1, tn s -3dB, fb, lin quan vi hng s thi gian: fb= 1
2T

- Thi gian ln ca xung: tr (khong thi gian t 10% lc thng thp RC: tr= 2,2RC= 2,2T

90% nh xung) vi b

d) Cng sut nhiu tng ng (NEP): l cng sut bc x to ra t s S/N =1 u ra ca detector ( mt tn s cho trc, v vi mt rng bng nhiu cho trc), n v l watts per (hertz)1/2. - Mt s nh cung cp nh ngha NEP l cng sut bc x to ra t s tn hiu / nhiu dng ti =1 + V hng s thi gian nh hng ln bin du ra ca linh kin, do tn s iu ch v dng sng phi c xc nh trc. +Bin tn hiu thu, cng sut nhiu, dng nhiu v in p nhiu ph thuc vo rng bng tn s in ca h o, c gi l rng bng nhiu hiu dng. Ch c cc gi tr NEP o hoc chnh vi cng rng bng mi c th c so snh trc trc tip . +NEP m t mc tn hiu hu ch nh nht m linh kin c th phn bit c.

34

e) Detectivity: l nghch o ca NEP + i khi ngi ta dng thu chun ha: D* = [A(f)]1/2/NEP vi rng bng. A: din tch min nhy quang ca detector, f: effective noise bandwidth
f) The field of view (trng quan st): l din tch trong khng khng gian m t

NEP/[A(f)]1/2 l NEP chun ha theo n v din tch v n v

detector nhn cng sut bc x. - Gc quan st (the angle of view): l gc o t b mt ca detector xc nh bin ca mt th tch trong khng gian m t nng lng c th n c detector. - Ch c ngun bc x trong vng quan st (the field of view) mi l ngun cn kim tra. Cc ngun nn l cc ngun khc vi ngun kim tra (test source) m cng sut c n u thu .
3) Tnh ton nhiu:

+ Trc tin cn xc nh rng bng ca nhiu, thng rng bng in ca h thng, bao gm u thu, cc b khuych i v thit b o c mt trn ng o tn hiu . - Nu rng bng in tng c ng cong p ng vi dc -18 (dB/octave) trn tn s ct trn th rng bng nhiu rng bng in . - Nu dc l -6 hay -12 (dB/octave) th rng bng nhiu = rng bng in fb x h s chnh rng bng f = Kb . fb, Kb = 1.571(/2) vi dc -6 (dB/octave) hay -20 dB/decade. = 1.222 vi dc -12 (dB/octave). * vi cc pin nhit in, NEP c nh ngha theo IEEE NEP = P0, vi P0 l cng sut sng ti m in p tn hiu VS = in p nhiu VN.
35

C th vit: NEP = (VN/VS).Pi Tong Pi l cng sut sng ti : Pi = H.A *Trong cc data sheet thng dng NEP chun ho: NEP = (VN/VS)[H.A/(f)1/2] *Trong data sheet D* = (VN/VS)[(f/A)1/2(1/H)] ___________________________________________

4.3

PN JUNCTION DETECTORS

1) Gii thiu:

- Photo diode l cc detector to ra dng in ph thuc vo bc x. - C 4 dng c bn: Planar PN junction, Schottky barrier photodiode, PIN photodiode, v Avalanche photodiode (APD) - C 2 mode hot ng: +Mode quang dn: +Mode quang th: phn cc ngc + ti ni tip ngn mch, ni vi OP-AMP ni ti, khng c th phn cc
2) Cc c trng c bn

+ c cu to vi mt pha ca cu trc bn dn c m cho bc x i qua 1 ca s hoc mt lp ph bo v. + Cu trc planar diffused photodiode: rt mng, din tch b mc rng, N dy hn lp b mt P (nhn bc x ti), c ch to theo phng php khuch tn kh vo bn dn. + Schottky barrier photodiode: dng lp mng vng mng ph ln bn dn loi N. Bin phn cch gia Au/N-Semiconductor hnh thnh 1 ro th. p ng ph phng hn PN photodiode trong vng IF, visible, v nhy hn trong vng UV.
36

-Tuy nhin schottky barrier photodiode nhy vi nhit hn PN photodiode do khng thng xuyn hot ng ng tin cy mc bc x cao. + PIN photodiode: Lp I (intrinsic) c tc dng lm rng min ngho in dung min ngho cp quang, gim thi gian p ng ca photodiode. c 1 vi mm cho ng dng c 1 cm2 cho cc thit b o. + Kch thc linh kin v v ph thuc ng dng mt vi inch cho ng dng pin mt tri gim

+ Hot ng ch phn cc ngc, ni trc tip vi ti v ngun phn cc. Cc photon c nng lng thch hp, n c vng ngho s b hp th v lm pht sinh cc cp in t l trng + C 4 trng hp kh d: (1) Nu photodiode h mch: th h mch ph thuc dng hm m vo mt dng quang ti. (2) Nu mt in tr khp kn mch ngoi ca photodiode: s pht sinh dng v st p trn tr. (3) Nu photodiode ngn mch: dng ngn mch t l vi mt dng quang ti. (4) Nu photodiode c phn cc ngc: dng ngc t l vi mt dng quang ti. + Cc solar diode l photodiode hot ng mode quang th. + Cc u thu trong k thut thng tin v thit b do hot ng mode quang dn. + Dng r ti: dng ngc pht sinh do cc cp e-, h+ to ra bi kch thch nhit, nh hn dng pht sinh bi photon rt nhiu. + mt bc sng c nh hoc nhit mu xc nh, dng quang pht sinh ca photodiode t l trc tip vi mt dng quang ti v din tch tch cc ca photodiode. + Hiu sut lng t: t s gia s in t pht x trn s photon b hp th, k hiu . Hiu sut lng t ca diode thc < 1 v thay i theo bc sng, c th c tnh nh sau:
37

tng dng ngc ng k

+ in trng ni ca min ngho s tch cc e- v h+v 2 pha N v P

 = I p / ip vi Ip l dng photodiode trung bnh, ip l dng ca u thu l tng c = 1. Dng cng sut sng n P qua din tch tch cc A: P= H0.A Nng lng photon n: Ep = hc / Dng photon pht sinh ca diode l tng: ip = (P/Ep).e, + p ng ca photodiode l tng: R = ip / P = e / hc = .(8.06 x 10-4 A/W.nm) vi l bc sng tnh theo nm. + p ng ca photodiode thc: R = (e / hc)
* Cc yu t nh hng ln hiu sut lng t

e = in tch in t

(1) Phn x: cc bn dn dng ch to photodiode c chit sut khong 3,5 s phn x 30% ti b mt bn dn.

(2) S suy gim h s hp th bc sng di: h s hp th bc sng ngn gp 104 ln so vi cc bc sng gn gii hn vng cm. H s hp th biu th kh nng 1 photon c th b hp th khi i qua mt n v khong cch trong vt liu. (3) S hp th sng ngn: do cc photon ngn b hp th sm lp trn ca photodiode trc khi c th ti c vng ngho, do khng ng gp vo dng thu. C th khc ph nh vic gim dy lp trn (4) Gii hn vng cm: cc photon phi c nng lng gy chuyn mc equa vng cm. * Diode thc l (APD_Avalanche Photodiode): c thit k nng cao hiu sut lng t, cho php to ra dng c tc ln hn tc dng photon ti. APD c phn cc ngc vi in p ln gia tc cc e- pht sinh do photon n vn
38

tc ln v va chm vi cu trc nguyn t trong min ngho to ra cc cp e- l trng mi, kt qu l dng tng c th tng hng trm ln so vi diode PN n gin. li dng = Dng APD / Dng do photon khi = 1 - li dng ca cc APD ch to t silicon rt nhy vi s thay i in p ri trn diode v vi nhit p v b nhit. - li dng ca APD phn nh s trung bnh cc e- c to ra trn 1 photon n. S e- c pht sinh bi 1 photon bt k thay i mt cch ngu nhin, to ra mt tn hiu nhiu chng ln gi tr trung bnh. Nhiu ny khc vi nhiu nhit v n lin quan n hin tng hp th v nhn. li c th rt nh mc cng sut thp. 3) c trng ng ti * Hot ng mode quang th t thin p - St p trn ti v dng quan h theo nh lut Ohm, trong khi quan h gia st p trn photodiode v dng tun theo c trng diode. - im lm vic giao im ng ti v ng cong (I-V) ca diode * Cc ng cong quang th (photovoltaic curves): - Nm gc 1/4 th t ca c tuyn Id(Vd). - Th h mch qua photodiode trn trc Vd: V0 = K1ln(K2H0) K1: hng s ph thuc nhit K2: hng s ph thuc bc sng v cu trc ca photodiode H0: mt dng quang ti * Ch hot ng ngn mch: -dng thay i tuyn tnh theo mt dng quang ti - Vo t l vi dng qua tr feedback - c th offset do dng r (rt nh). * Ch phn cc ngc: (mode quang dn) - in dung diode gim gim thi gian p ng
39

cc mch ng dng rt phc tp, i hi n nh in

t l vi mt dng quang

- Th thin p VB tiu biu 10V - Quan h dng p: V0 = VB - VD hay IpRL = VB - VD

VB gi l dng bo ho ISAT RL

- trnh ph hu diode khi Ip=0, th phn cc ngc phi < th nh thng - Khi Vd = 0 Ip = Ingn mch = Imax =

*ng ti Qua cc im (VB, 0) v (0,VB/RL) trn h c tuyn ngc Id(Vd). ngha: khi mt dng quang n, v d, = H2 dng I2 qua iode - tng khong dng th cn tng VB hoc gim RL . - Tch ca p v dng i qua diode cn lun nh hn kh nng tiu tn cng sut ca diode . ng ti nm trong ng cng sut cc i cho php. - Cng sut tiu tn cc i cho php xy ra khi mt dng quang to ra dng in =
1 1 dng bo ho, khi Vd= VB 2 2

4) M hnh tn hiu nh cho photodiode: * Ngun dng Ip: dng trung bnh gy bi sng ti. Ip = RP R: p ng ca photodiode (Ampere/Watt) P: cng sut sng ti tng cng. * in dung Shunt C: in dung chuyn tip phn cc ngc C = KA/[(V0 VD)]1/2 K: h s t l 19000, khi n v ca cc i lng khc nh sau: A: din tch tch cc (cm2), : in tr sut (.cm), nhn gi tr t 10-10000, V0: th khuch tn ca min ngho 0.6V vi Si, VD: th phn cc ngc, nhn gi tr m.

40

* Tr Shunt: uc ch khi tnh ton nhiu, cn gi l tr knh (channel resistance) nm trong khong 100k vi M , gim khi nhit hoc din tch linh kin tng, tng khi th phn cc tng. c nh ngha = dc ca ng cong I_V ti th zero hay = t s ca th phn cc ngc qua diode / dng ti. * Dng nhiu In tnh cho tt c cc hiu ng nhiu. + Nhiu lng t (quantum noise): gy bi qu trnh p th photon, quan trng khi mc cng sut sng ti thp. Cc photon n c th c hp th hoc khng ti mt thi im, dng thu c th > hoc < dng trung bnh. Qu trnh ny l ngu nhin v to ra dng nhiu lng t = cng sut tn hiu to bi dng trung bnh c cho bi: Pm = (H0A)m (hc/)(f/) vi Pm: cng sut sng ti khi (S/N) =1, f: rng bng nhiu + Shot noise (nhiu bn): xem dng l tng ca rt nhiu xung dng nh gy bi chuyn ng ca ht ti trong cc bc ri rc, lm cho dng thay i quanh gi tr trung bnh. S thay i ny gi l shot noise current. IS = [2ef(Id + Ip)]1/2 vi Id: dng ti Ip: dng quang trung bnh + Nhiu nhit: c th chim u th khi hot ng mode ngn mch It = (4kTf/RSH)1/2 vi RSH: in tr shunt ca photodidode Tr ti RL lm tng nhiu nhit: It = [4kTf(1/RSH + 1/RL)]1/2

41

* Dng nhiu tng In: In = (IS2 + It2)1/2 * Cng sut nhiu tng ng: (NEP) NEP = In/R V d: Tnh phn b nhiu khi cho bit: H0, A, , R, RL, f, RSH, Id. * Tr ni tip (Rs): bao gm tr ca vt liu v cc tip xc, ng vai tr quan trng vi thi gian ln v tnh tuyn tnh, nhn gi tr t 0,1 * Trng hp RL + RS << RSH v RL > RS, (gi thit IP >> IN) S tng ng tn hiu nh s gn hn Hng s thi gian ca h u thu: RC (RS + RL)(C + Cp) vi Cp l cc in dung song song khc * p ng ca detector bt u phi truyn khi dng 1/3 dng bo ho Dng tuyn tnh ti a:
Imax = Isat/3 = (1/3)VB/(RS + RL)

vi trm Ohm

42

CHNG V MT S LINH KIN QUANG IN T THNG DNG 5.1 RADIATING DIODES AND DISPLAY DEVICES

1) Radiating junction devices

- Khi c dng thun qua LED hoc IRED, cc photon c bc x t diode junction do ti hp in t v l trng ti min chuyn tip (junction). - Bc sng photon l hm ca chuyn mc nng lng xy ra trong qu trnh ti hp. - a s linh kin LED v IRED ch to t cc vt liu trn c s gallium.
Bng LED materials and wavelengths

Material GaP (gallium phosphide) GaP (gallium phosphide) GaAsP (gallium arsenide phosphide) GaAlAs (gallium aluminum arsenide) GaAs (gallium arsenide)

wavelength (nm) 520570 630790 640700 650700 920950)

Comments Green Red Orange-red Red Infrared

- Cc LED hoc IRED tiu biu c lp vt liu N tng i dy c ph vng mt y. Mt trn ca linh kin l lp P rt mng (c vi m) cho php cc photon bc x ra ngoi. Lp N c th gm mtl s lp ca cc vt liu cha Ga c pha tp khc nhau cho bc sng mong mun. - Cc diode trn c s Ga c th thun tng i cao so vi Si v Ge. c trng dng th ca LED t dc hn nhiu so vi Si diode.
* Data sheets:

- Cc c t ca LED (HLMP-3000): + Introductory comments: Red solid state lamps

43

+ Absolute maximum ratings (at TA =25oC): power dissipation (100mW); DC forward current (50 mA, derating linearly from 50oC at 0.2 mA/oC); Peak forward current (1Amp, 1sec pulse width, 300pps: 1-A current is applied to the device for a 1-s interval once every 3333 s, hay tn s 300 Hz). - Quan h gia cng sut nh (peak power) ca xung c php (khng ph hy linh kin) v cng sut trung bnh: Pavg = Ppeakx (pulse width / period) Tc c php lin quan vi hng s thi giannhit, l hm ca khi lng, din tch b mt, bc x v dn. Cng thc trn p dng khi rng xung cng sut in p t nh hn nhiu so vi hng s thi gian nhit. Hng s thi gian nhit thng khng c cho trong data sheet, khi cn phi o thc nghim. a s LED package c hng s thi gian nhit nh hn 1 pht xung thng cn ln hn 1kHz. - Cn ch bng cc c trng in: luminous intensity, wavelength at peak, speed of response: 10-90% time interval, diode capacitance (to develop the circuitry to turn device on and off, forward voltage,reverse breakdown voltage, thermal resistance ( from the junction (chip) to cathode lead, included angle between the half luminous intensity points. ---------------------------------------5.2 TINH TH LNG V N IN PHT QUANG

tn s

- B hin th tinh th lng l linh kin to ra nh kh kin nh iu khin s truyn sng qua mt qu trnh phn cc. Cc n in pht quang thng c dng nh cc ngun nh sng en cho ng dng hin th tinh th lng. - Trong cc my tnh b ti, thng tin alphanumeric t calculator c hin th nh cc k t en trn nn xm. Module hin th thc s c lm t mt s cc phn t tinh th lng ring bit (segment hay dot). Khi p t tn hiu in thch hp, cc phn t ny c th hin th mu en hoc xm.
44

- Vt liu tinh th lng l vt liu hu c m nhit phng c mu trng c v trng thi lng nhit phng. nhit thp tr thnh trng thi tinh th rn. Vt liu tinh th lng c kp gia 2 tm phng dn in, mt trong hai l trong sut. - Khi nh sng phn cc i qua mt phn t c thin p vi in p nh hn gi tr ti hn Vc, dng phn cc quay gc 90o. Khi in p ln hn gi tr bo ha Vsat, nh sng phn cc s truyn qua m khng thay i dng phn cc. Trong khong in p gia Vc v Vsat, phn cc nh sng se quay mt gc t 0-90o. C 2 k thut cho php dng hin tng ny hin th: dng ngun sng khuch tn pha sau phn t hin th v dng gng, kt hp vi 2 b phn cc. Khi in p phn cc nh hn Vc, s thy mt m sng. Khi in p phn cc ln hn Vsat, s thy mt m ti. truyn qua ca nh sng s l hm ca in p thin p. - Vc v Vsat u ph thuc nhit . Vsat c th nh c 3V v thng khng vt qu 20V. Tn s tn hiu thin p c th vi kHz, nhng thng c 30, 60 hay 100Hz. Bin in p mt chiu trong thin p khng c vt qu vi mV. - phn tch mch, tinh th lng c th c m hnh ha nh mt in dung nh // vi mt in tr ln. Thnh phn dng in dung gp c 50 ln thnh phn dng in tr. Mch thin p cn c thit k chu ti in dung. - Din tch ca mi phn t xc nh gi tr tr v in dung. Gi tr tr gim v in dung tng khi din tch tng. Gi tr in tr sheet v din dung sheet tiu biu: 3400 pF/in2, 44M.in2. V d: tnh dng cung cp cho phn t hin th tinh th lng bit din tch = 0.032 in2, in p = 5 Vrms, tn s = 60 Hz. - Thng dng 7 segment cho 1 k t, v t nht 4 k t 28 segments.
* Qu trnh phn cc: Phn cc ca bc x gy bi tng tc ca bc x vi

cc phn t. Nu vector phn cc ca phn t v vector cng trng nm trong cng mt mt phng th vector cng trng ca bc x s c xu hng nh hng theo cc phn t. Nu vector phn cc ca phn t // vi vector vn tc ca bc x th s khng c tng tc.
45

- Khi th phn cc = 0, vector phn cc ca cc phn t se quay t t 1 gc 90o gia 2 bn cc t. - Khi V > Vsat, vector phn cc ca cc phn t s nh hng ng lot theo in trng p t khng c tng tc xy ra. - Cc n in pht quang c dng dng phng, nhit lm vic thp, bc x khuch tn. Mt s tnh nng quan trng: + Kch thc: chiu dy mt vi phn mi in, nhiu dng ch nht v trn, tin dng cho vic hin th. + Nhit lm vic: gn nhit mi trng + Tnh ng nht ca sng: ngun sng khch tn ng nht, gn nh n Lambert l tng. - Cc linh kin ny cha lp phosphor dielectric kp gia 2 bn in cc, mt trong 2 bn l polymer trong sut, bn cn li m c v c ph mng kim loi mng. Lp in mi phoshor gm cc ht phosphor rt mn, nhng trong vt liu lin kt trong sut v c cch ly vi nhau. - Khi p t dng xoay chiu qua linh kin, vt liu phosphor b kch thch bi in trng v gy bc x. Vi mch ngoi, n in pht quang tng ng mt ti gm t // tr dng tng theo tn s. Cc n thng mi hot ng 115 V ac 60 Hz v 11 V ac 400 Hz v sng gp 3 ln 400 Hz so vi 60 Hz. Bc x gim rt nhanh theo in p v gn nh bng khng khong 40-60 V ac. gy ra s quay ca vector trng ca bc x. - Khi V > Vc, vector phn cc ca cc phn t s nh hng theo in trng p

46

5.3

PHOTOTRANSISTORS V OPTO-ISOLATORS

1) Phototransistors.

- L transistor c dng base gy bi bc x ti v do dng C-E cng ph thuc bc x ti. Chuyn tip C-B hot ng nh photodiode v chuyn cc photon thnh cc ht tI, to ra dng base gy bI photon, Ip. Dng ny gy ra dng collector: IC = HFE x Ip - i khi tip xc in c ly ra t min base, khi c thm thnh pgn dng IB: IC = HFE (IB + Ip) - Phototransistor c th c dng nh mt b khuch i tuyn tnh, nhng thng dng nh mt chuyn mch . Tc chuyn mch thng 10s hoc hn dng lm detector trong cc h thng chm. - C mt s cu hnh linh kin: + Single phototransistor per package vI simple lens window + Photo-Darlington (gm 1 phototransistor v mt transistor thng thng) + Photon-coupled isolator, cha IRED v mt detector nh phototransistor, photo-Darlington hoc photodiode. - So vi photodiode, phototransistor c li dng HFE ln. Dng C-E ln hn so vi planar diffused photodiode vi cng din tch tch cc. Phototransistor v APD u s dng qu trnh nhn s ht ti pht sinh do photon 2) c t ca Phototransistor. - Data sheet in hnh s cho bit iu kin lm vic ti a: p, dng, mc cng sut, v nhit ph hng linh kin. - Voltage rating: c mt s ch s c bit, v d V(BR)CEO vi BR ch reverse breakdown voltages
Rating meaning

tng dng.

VCEO

in p E-C vi cc base open hoc base-emitter junction b che ti.

47

VCBO VEBO

in p base-collector vi cc E open in p base-emittor khi cc C open, thin p ngc

- Cc c trng quang trong data sheet gm p ng dng ca phototransistor: dng collector IL khi p ng vi mt mt dng bc x n, v dng ti. Ngun dng quang l mt n c nhit mu gn 2870 K, i khi l n n sc hoc LED hoc IRED. - p ng dng thng khng tuyn tnh ng. - p ng ph v p ng gc cng c trong data sheet. p ng ph ca phototransistor gn tng t vi photodiode ca cng loi vt liu. 2) Optoisolator - Cc linh kin c mounted trong mt case cho php d dng kt ni vi mch in. Thng c 2 transistor mounted trong case v ni vi nhau theo kiu Darlington sao cho chuyn tip base-emitter ca transistor u tin (l phototransistor) nhn bc x v emitter ca n c ua vo base ca transistor th hai ln, tuy nhin, p ng chm hn khi dng 1 transistor. - Thay cho mt cp Darlington, mt opto-isolator c th c mt phototransistor hoc mt photodiode lm nhim v phn t detector. Ngun thng l GaAs IRED. Mt xung in p p t qua IRED gy ra xung photon ghp vi detector thng ng dng trong y sinh v iu khin cng nghip - c trng cch li ca linh kin thng biu th theo 3 cch: in tr, in dung v th nh thng, c o gia IRED v detector. - Ty theo cch nhn nhn m linh kin c th c coi l mch ghp tn hiu quang hoc mch cch li in. - Vn nhit: opto-isolator c cha 2 ngun nhit: IRED v detector ngoi s t nung nhit n gin do tn hao cng sut ring l, chng cn lm nng ln nhau. Nhit nng s truyn t bn dn nng hn sang bn dn ngui hn. Ngi thit k cn gi c 2 bn dn di nhit cho php theo phng trnh sau: T = (PH + KPC)
48

cn c c t bi ng cong p

gain dng collect

vi

T: chnh lch nhit gia mi trng v nhit hot ng cc i cho php : Tr nhit gia junction-to-ambient PH: cng sut tn hao ln nht, bn dn nng nht K: h s ghp nhit PC: cng sut tn hao ca bn dn ngui hn

- Thng 2 linh kin khng tn hao cng sut ging nhau dn no nng hn. - Phng php nh gi tn hao trung bnh cho IRED: + Khi dng, p khng i: vic. P = IdVd

cn bit trc bn

+ Ch xung: ly trung bnh P = VCEIc khi bit rng xung v tn s lm

49

CHNG VI CP QUANG 6.1 TRUYN SNG TRONG CP SI QUANG

- Nng lng in t b nht trong li si quang nh c ch phn x v khc x - Khi nng lng c th lan truyn theo nhiu ng khc nhau trong si quang th si quang c gi l si a mode - Nu ch c mt ng truyn nng lng kh d (dc theo trc gia), si quang gi l si n mode. - Li si quang thng c dng ng tit din trn; chit sut li n1> chit sut lp bo v n2 - Lan truyn a mode c th m hnh ho nh hin tng phn x ni ton phn, khi gc ti ca tia ti lm vi php tuyn ca mt phn cch li/lp bo v 1 gc gc ti hn c (cc tia khng phn x ton phn s mt dn nng lng v suy gim nhanh) sinc = n2/n1 - Ngun nng lng a vo si quang t mi trng ngoi c chit sut n0 -Gc vo ca mt tia s xc nh gc ti ca n vi mt phn cch li/ v ca cp si quang. Gc vo tng ng vi gc ti hn c c gi l gc c php (acceptance angle) n0sina = n1sin(90o c) hay sina = (n12 n22)1/2/n0 = (n12 n22)1/2 khi mi trng vo l khng kh. vi a < 20o c th tnh gn ng: a (n12 n22)1/2 c = /2 - a/n1 * Gc lan truyn cc i p: L gc ln nht trong si quang, so vi trc gia, vn gy ra phn x ton phn p = 90o c p (n12 n22)1/2/n1
50

* Khu s (numerical apecture- NA) sina Vi cp quang dng trong thng tin quang, a nh * C 3 loi si quang c bn : + Si chit sut bc (step-index fiber): thay i t bin chit sut li v v. + Si chit sut thay i t t (graded-index fiber) n(r) = n0[1- (n12 n22)/n02(r/r0)2]1/2, vi 0 < r < r0 Chit sut gim dn t tm ra bin phn cch vi v (n2) + Step- index- multimode fiber: - ng knh li 50 - 0.2 NA 0.5 - ng knh ngoi t 125 1100 m + Graded - index - multimode fiber : - ng knh li 50 100 m - 0.2 NA 0.3 - ng knh ngoi t 125 150 m thng tin khong cch xa + Single mode fiber: - ng knh li: 4 10 m - 0.1 NA 0.15 - ng knh ngoi t 75 125 m long-distance communication - Cc xung cng sut c ti dc theo cc ng khc nhau s ti u cui ti nhng thi im khc nhau ( mode trc ti trc tin, mode ng vi gc NA n sau cng) tr mode . - Do tr mode, xung dng tng thu c s rng hn xung bc x gc. qu trnh m rng xung ny xung ny gi l mo mode (modal distortion ). Graded - index fiber c mo mode nh hn so vi step-mode fiber. - Bin xung truyn qua cp b suy gim do hp th, tn x v bc x.
51

NA a ( rad )

1000 m

- C ch tn hao hp th: chuyn i nng lng bc x thnh nhit nng, ph thuc vt liu v tp cht. - C ch tn hao tn x : cc tia nng lng b lch khi ng truyn mong mun, do phn x t defect v tn x Rayleigh bi vt liu. Tn x Rayleigh do tng tc sng in t bc x vi cc in t ca vt liu, cc in t ny s hp th v ti bc x sng gy ra di pha so vi tn hiu gc. Mt phn nng lng b thot ra ngoi do bc x tn x, tn hao tn x ~ -4. - Tn hao bc x: nng lng thot ra khi si quang khi vi phm gc ti hn do cp b b cong qu nhiu, do thay i ng knh li v thay i chit sut. ____________________________________________
6.2 CC C TRNG V CC THNG S C BN

1) Cc thng s c bn:

* Khong cch gia cc gc c php (hay gc tch c php): = / d = 0 / n1d vi d: ng knh si quang n1: chit sut li si quang 0: bc sng trong khng gian t do * S mode c th tn ti trong si quang ph thuc v gc ti lan truyn, vi cp trn: n = (T)2/2 vi T = p / p: gc lan truyn cc i n: s mode khi T > 2.405 * Thng s V (hay tn s chun ho), khi T < 2,405: V = T = 2r[(n12 n22)1/2] / 0 vi r: bn knh li si quang n2: chit sut v
2) Mo mode v tn sc
52

(rad)

Gi

t0: tr trc vi khong cch L tm: tr dc theo ng truyn ng vi p t0 = n1L / c tm = n1L / c.cos p t = tm t0 = (Ln1/c)(n1 n2)/n2

* Hin tng tn sc xy ra khi ngun bc x nhiu bc sng trong mt khong

, khi xung tn hiu s b m rng 1 lng:

t = K()..L vi K(): h s tn sc, ph thuc vt liu v bc sng. L: chiu di cp si quang

3) Cng sut thu

-Cng sut bc x s ra khi ng dn sng theo 1 hnh nn tng t nh qua l hp . -Khi khong cch gia u thu v ming si quang gim, kch thc vt chiu t ming s t ti ng knh li si quay. Nu din tch u thu nh hn din tch vt chiu, th t s dng bc x thu c /dng ri khi si quay = t s din tch: e / 0 = (Dd / Dc)2(NAdet / NAfiber)2 vi NAdet: khu s u thu NAfiber: khu s si quang e: dng bc x n u thu 0: dng bc x ri khi ming si quang Dd: ng knh ming u thu Dc: ng knh li si quang
4) rng bng:

BW = 0.35 / T vi T = (t12 t22)1/2 T: h s m rng xung t2: rng xung u ra si quang t1: rng xung u vo si quang
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 6.3 1) Thit b

COMMUNICATIONS LINKS

Mt tuyn thng tin quang bao gm mt ngun, mt u thu v cp quang kt ni tuyn. Ngun c th l LED, IRED hoc laser diode. Ngun c th c iu ch vi tn hiu tng t, nhng thng c kch bi cc xung s. Detector thng dng PIN hoc APD. Tuyn thng tin c th xem l thng tin khong cch ngn, trung bnh hoc xa. Thng tin khong cch ngn thng trong phm vi vi m v dng cho: - Thit b iu khin qu trnh v thit b cng nghip - Cm bin y t, a vo c th bnh nhn v ni vi thit b ghi - My tnh v thit b ngoi vi - Cc cu phn c chnh xc cao cho mc ch qung co H thng khong cch trung bnh thng ln hn vi m v di 1 km, cn gi l mng LAN, thng dng si thy tinh a mode (bng rng v tn hao thp) hoc plastic a mode. Ngun in hnh l IRED hot ng bc sng 850 nm. Khu s thng t 0.2 0.5 v ng knh li 50 100 m tin cho vic ghp vi bc x t IRED. ng knh li ln hn s gim chi ph lp t, kt ni, nhng rng bng gim. H thng khong cch xa d thit k hn do yu cu hn ch s la chn cu phn. H thng khong cch xa dng ti d liu bng rng v c th dng si chit sut graded. khong cch rt xa th ch dng si n mode bo m rng bng v mc tn hao cho php. C th dng ngun communication-grade laser diode hoc edge-emitting IRED ghp nng lng vo cc si quang ny. K thut hn cp si quang thng c dng hn so vi cc b u ni c bao m tn hao thp v n nh cao.
2) Cc cu trc ng dn sng v cc linh kin khc

Integrated optics l cc ng dn sng v cc cu phn quang c tch hp trn cc vt liu dng k thut tng t mch tch hp bn dn. Cc linh kin tch hp
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quang thng l cc b tch tn hiu, cc b di pha, cc b iu ch v cc b chuyn mch. Tt c cc linh kin tch hp quang u dngcc cu trc ng dn sng c to bi cc ng dn ca vt liu c chit sut ln hn chit sut ca vt liu . Cc ng dn sng hot ng tng t cp si quang v c xem xt nh cc b tch hoc ghp tn hiu. Bng cch iu khin tit din ng dn sng, chit sut ca vt liu, khong cch gia cc li v chiu di ca min ghp, s thit lp c t phn ghp nng lng.
Cc thng s ca b ghp quang:

Thng s T s ghp Tn hao d tha Tn hao chn ng nht nh hng Trong :

B ghp 4 cng P2 / (P2 + P3) P 2 + P3 / P 1 P2 / P1 P2 / P3 P4 / P 1 PN: cng sut ra khi cng N bt k Pi: cng sut vo tng Po: cng sut ra tng Ph: cng sut ra ln nht Ps: cng sut ra nh nht Px: cng sut ra cng khng ghp

B ghp N-part PN / P o Po / Pi PN / Pi Ph / Ps Px / Pi

Qu trnh ghp dng mng 4 cng c th kt hp vi hiu ng quang in (electro-optic effect) to ra cc chuyn mch quang. Cc vt liu c hiu ng quang in s thay i chit sut khc x khi c mt in trng do p t in p. S kt hp ca in p thin p v in p chuyn mch s xc nh u ra truyn bc x. Cc vt liu tinh th (chng hn GaAs) c hiu ng quang in. Vt liu : LiNbO c hiu ng quang in rt mnh. Th chuyn mch c 510V. H s nh hng c 100:1 n 3000:1.
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Chit sut ca vt liu nh hng n vn tc truyn sng

thay i chit sut

c th thay i pha tng i. Cc b di pha v iu ch pha cu to t mt ng dn sng t trong tinh th quang in, gia 2 in cc. Lng di pha ph thuc ln in p v chiu di ng dn sng.

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