Bi gii: a. Transistor c mc theo s DC Drain Common. b. Mch nh thin kiu phn p. c. R1 , R2 : Cu phn p ly t ngun VD to in p phn cc cho G.

G. R3 : in tr cc S nhm n nh khuch i ca transistor. C1 , C2 : T lin lc ly tn hiu vo v tn ra ca mch transistor.

Bi gii: in p trn cc gc chnh l st p trn in tr R2 do dng in phn p to nn. Vy ta c Vcc VB = I phn p .R2 m: I phn p = V: R1 + R2 V .R 35.5 VB = CC 2 = = 1,129V Do : R1 + R2 150 + 5 T s ta c: VB = VBE + VE 1

Trong :

VE = RE .I E = RE ( I B + I C ) = RE ( I B + I B ) = I B RE (1 + ) VB = VBE + I B RE (1 + )

Tm I B : IB = Tm I C :
I C = I B = 100.0, 0184 = 1,84mA

VB VBE 1,129 0, 2 = = 0, 0184mA RE (1 + ) 0,5(1 + 100)

Tm I E :

Transistor Gemani c : VBE = 0, 2V IE = VB VBE 1,129 0, 2 = =1,858 mA RE 0,5

Tim in ap U CE : U CE = Vcc IC RC IE RE = 35 1,84.2,5 1,858.0,5 = 29.47V Tim h s n inh S: RB = R1.R2 150.5 = = 4,838K R1 + R2 150 + 5

S=

1+ 1 + 100 = = 9, 74 .RE 100.0,5 1+ 1+ RE + RB 0.5 + 4,838

3, Cho s mch nh hnh v:

Bi gii: a. b. Transistor c mc theo cch cc ngun chung SC Source Common. Mch nh thin kiu phn cc t cp. Nhim v ca cc linh kin trong mch: RG : in tr nh thin RD : in tr ti cc D RS : in tr n nh cc S C3 : ni t thnh phn xoay chiu C1 , C2 : t lin lc ly tn hiu vo/ra. Tm U GS : U I D = I DO 1 GS U GSngat ID 1 U GS = U GSngat I DO
2

c.

200 U GS = (4) 2 1 = 36V Tm RS : U GS = I D .RS RS = U GS 36 = = 180 ID 200.103

4. Trnh by v s mc cc gc CB ca transistor lng cc trong cc mch khuch i v c im ca cch mc ny. S mc gc chung: S mch mc cc gc chung m t trong hnh 1. Trong s mch c: + EE , EC l ngun cung cp mt chiu cho tranzito loi P-N-P trong mch. + RE - in tr nh thin cho tranzito. RE c nhim v lm st bt mt phn in p ngun EE m bo cho tip xc pht c phn cc thun vi in p phn cc UEB 0,6 V cho tranzito Silic, v UEB 0,2V cho tranzito Gecmani. ng thi tn hiu vo s h trn RE a vo tranzito. + RC - in tr gnh c nhim v to st p thnh phn dng xoay chiu ca tn hiu a ra mch sau v a in p t m ngun EC ln cc gp m bo cho tip xc gp c phn cc ngc. + T in C1 , C2 gi l t lin lc c nhim v dn tn hiu vo mch v dn tn hiu ra mch sau.

RC Mch vo UVo C1 E IE UEB B EE IB EC IC C UCB C2 Mch ra URa

RE

Hnh 1: S mc gc chung cho tranzito loi P-N-P Cc gc B ca tranzito trong s c ni t. Nh vy, tn hiu a vo gia cc pht v cc gc. Tn hiu ly ra gia cc gp v cc gc nn cc gc B l chn cc chung ca mch vo v mch ra. - Ta gi l s mc cc gc chung. Trong mch c cc thnh phn dng in v in p sau: IE gi l dng in trn mch vo. IC gi l dng in trn mch ra. UEB gi l in p trn mch vo UCB gi l in p trn mch ra Mi quan h gia cc dng in v in p trn cc chn cc c m t thng qua cc h c tuyn tnh. C hai h c tuyn chnh l : H c tuyn vo: UEB = f1(UCB, IE) H c tuyn ra: IC = f2 (UCB, IE) H c tuyn vo: c tuyn vo m t mi quan h gia in p vo v dng in vo nh sau: UEB = f1(IE) khi UCB = const. Xt trng hp i vi tranzito lng cc Gecmani loi P-N-P. Khi cc gp h th c tuyn vo chnh l c tuyn Vn-Ampe ca tip xc P-N phn cc thun nn ta c: 1) Ta c ng c tuyn vo m t trong hnh 2. IE = I0( e
U EB VT

UEB (V) 0,6 0,4 0,2 0 10 20 30 UCB = 0V UCB= -10V UCB= - 20V 40 IE (mA) UCB h

Hnh 2: H c tuyn vo ca tranzito gecmani loi P-N-P. Khi UCB 0, c tuyn x dch rt t chng t in p trn cc gp t nh hng n dng in qua tip xc pht. H c tuynra: c tuyn ra biu th mi quan h gia dng in trn mch cc gp vi in p trn mch cc gp. Ta c mi quan h sau: IC = f2(UCB) khi IE = const. Biu thc tnh dng in trn cc gp IC nh sau: IC = IE + ICBo IC (mA) 40 30 Vng dn bo ha 20 10

Vng tch cc IE5 = 40mA IE4 = 30mA IE3 = 20mA IE2 = 10mA IE1= 0 -8 UCB (V)

(IE3 - IE2)

IE
2

ICB0 -4 -6 Vng ngt

-2

Hnh 3: H c tuyn ra ca tranzito gecmani loi P-N-P trong s mc cc gc chung + Khi IE1 = 0 (khi cc pht h mch): c tuyn ra chnh l c tuyn Vn-Ampe ca tip xc gp phn cc ngc. Do vy, dng in cc gp IC = ICBo. + Khi IE2 > 0: l khi tip xc pht c phn cc thun th dng in cc gp s l: IC = IE2 + ICBo

Khi UCB > 0 trong khi UEB > 0 tranzito lm vic ch bo ha nn s c dng in thun ca tip xc gp chy ngc chiu vi thnh phn dng in thun t cc pht sang ( IE2), do vy, dng in tng qua tip xc gp gim nhanh n 0 v sau tng nhanh nu UCB > 0 tng tip tc. Cc c im ca s mc cc gc chung: - Tn hiu vo v tn hiu ra ng pha nhau - Tr khng vo ZV nh khong vi chc n vi trm m 1 Z vo = 30 300 S Tr khng ra ln Z ra = RC = 100 K 1M h s khuch i dng in cc pht I = C <1 IE ( = 0,95 0,99)

Nh vy transistor trong s mc cc gc chung khng c khuch i dng in. H s khuch i in p: U ra I C Z gnh Z gnh Ku = = U vo I E Z vo Z vo H s khuch i in p ph thuc vo in tr gnh. Khi Zgnh Zra th Ku c tr s khong t vi trm vi nghn ln. - H s khuch i cng sut c th t ti tr s hng trm ln. - Dng in r ICBo nh (khong t vi chc nA n vi A i vi tranzito Silic, v n vi chc A i vi tranzito Gecmani). - Tn s lm vic gii hn cao v c in dung thng ng nh. S mch mc cc gc chung c n nh v nhit cao v tn s lm vic gii hn cao. Mch thng c dng di tn s lm vic cao nh cc tng dao ng ni ca my thu thanh, cc tng tin khuch i m tn ca my tng m, hoc tng khuch i cng sut y ko. .