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Slides 4 A
Slides 4 A
in CMOS
source : arpa-esto
DEC 21164
20 Nickel-Cadium
BATTERY 10
(40+ lbs)
0
65 70 75 80 85 90 95
Year
Multimedia Terminals Expected Battery Lifetime increase
Laptop Computers over next 5 years: 30-40%
Digital Cellular Telephony
• Leakage
Leaking diodes and transistors
Vin Vout
CL
Energy/transition = CL * Vdd2
= CL * Vdd2 * f0→1
= CL * Vdd2 * P0→1* f
= CEFF * Vdd2 * f
Assume:
P(A=1) = 1/2
P(B=1) = 1/2
Then:
P(Out=1) = 1/4
P(0 →1)
= P(Out=0).P(Out=1)
= 3/4 × 1/4 = 3/16
CEFF = 3/16 * CL
A X
B
Z
Reconvergence
VDD
φ Mp
Out
In1
In2 PDN
In3
φ Me
Assume:
P(A=1) = 1/2
P(B=1) = 1/2
Then:
P(Out=0) = 3/4
CEFF = 3/4 * CL
P0→1 = P0
B Z
C
Unit Delay
6.0
out8
4.0 out6
out4
out2
V (Volt)
2.0
out1
out3
out5
out7
0.0
0 1 2 3
t (nsec)
S0 S1 S2 S14 S15
Sum Output Voltage, Volts
4.0
4
S15
6
2.0 3
S10
Cin
5
S1
2
0.0
0 5 10
Time, ns
0
F1 0
1 F1 1
F2 0
0 2
F3
0 F3
0
0
F2 1
0
Vdd
Vin Vout
CL
0.15
0.10
IVDD (mA)
0.05
VDD VDD
Vout Vout
Vin Vin
CL CL
Vdd
Istat
V out
CL
V in=5V
Vout
Drain Junction
Leakage
Sub-Threshold
Current
√ID
1 1 B 4
A A 2
B
F C 4
2 CL
B D 2
F
2 A 2
D 1
A
B 2C 2
1.00 P x td = E t = C L * Vdd 2
0.70
0.50
0.30
0.20
0.15 quadratic dependence
E(Vdd=2) (CL) * (2)2
=
0.1
E(Vdd=5) (CL) * (5)2
51 stage ring oscillator
0.07
0.05
E(Vdd=2) ≈ 0.16 E(Vdd =5)
8-bit adder
0.03
1 2 5
Vdd (volts)
7.50 multiplier
7.00
clock generator
2.0µ m technology CL * Vdd
6.50 Td =
6.00
I
5.50
NORMALIZED DELAY
5.00
4.50 I ~ (Vdd - Vt)2
4.00
3.50
ring oscillator
3.00
2.50
Td(Vdd=2) (2) * (5 - 0.7)2
microcoded DSP chip =
2.00 Td(Vdd=5) (5) * (2 - 0.7)2
1.50 adder
1.00 adder (SPICE) ≈ 4
2.00 4.00 6.00
V dd (volts)
Delay I
D
Large W/L’s
Higher Capacitance Lower Voltage
Cg = W/L CMIN
I ∝ W/L CMIN
C MIN = Minimum sized gate (W/L=1)
W /L after sizing
CP = Cwiring + CDF
α = CP / (K C MIN)
10
7
HIGH PERFORMANCE α =0
NORMALIZED ENERGY
5
W/L >> C P / (K C MIN) 4
3 α = 0.5
LOW POWER 2
1.5 α=1
W/L = 2 CP / (K C MIN)
(if C P ≥ K CMIN) adder
1.0 α = 1.5