Ordering number:EN 199)___|
2SB544/2SD400
[Ey ‘PNP/NPN Epitaxial Planar Silicon Transistors
Low-Frequency Power Amp,
Electronic Governor Applications
(): 288544
Absolute Maximum Ratings at Ta = 25° unit
Collector to Base Voltage Yeo (-)25
Collector to Emitter Voltage Voro (-25 OV
Emitter to Base Voltage VeBo oe,
Collector Current Ic (A
Collector Current(Pulse) Icp (2 A
Collector Dissipation Po 900 mW
dunetion Temperature 7 160°C
Storage Temperature Tstg -55t0+150 °C
Electrical Characteristics at Ta=25°C min typ max. unit
Collector Cutoff Current Icgo Vop=(—)20V,1e=0 C0 pA
Emitter Cutoff Current Igno Vep=(—)4V,Ic=0 (Lo BA
DC Current Gain bre) Vog=(~)2V,Jo=(—)50mA. 60% 560%
bre(2) —)1A 30
Gain-Bandwidth Product fp Vex=(—)10V,Ig=(—)50mA, 180 MHz
Output Capacitance ob Von=(—)10V,f=1MHz (25) oF
15
C-E Saturation Voltage —Vorisat) —Io=(—)500mA,Ip=(—)50mA (-0.15) (-07) V
01 03
BLE Saturation Voltage Vprisay — Io=(—)500mA,Iy=(—)50mA (00.85 (12
C-BBreakdown Voltage Viprcro Io=(—)10pA,Tg=0
C-E Breakdown Voltage Vipriceo le=(—)1mA,Rps=”
E-BBreakdown Voltage Viereso Ie=(—)10pAdL
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¥ + The 29B544/2SD400 are classified by 50mA hye as follows:
60D 120 | 100 E 200 | 160 F 320 | 280 G 560
Case Outline 2006A
(unit: mm)
20,
BIAS: SC-51 Bs Bas
‘SANYOURP Cr Collector
Es Enitter
Spocifications and information herein are subject to change without notice.
onductor Business Headquarters
eee AORN!
4280MO/S157AT/DIT4MW,TS No.199-1/3 MM 7997076 OO1S716 245 Ml
2532SB544/2SD400
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Ambient Temporats
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