Power Transistors

2SC3973, 2SC3973A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
0.70.1

Unit: mm
10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2

s Features
q q q q q

High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C)
Ratings 800 900 800 900 500 8 15 7 4 45 2 150 55 to +150 Unit V

16.70.3 14.00.5

Parameter Collector to base voltage Collector to 2SC3973 2SC3973A 2SC3973

Symbol VCBO VCES VCEO VEBO ICP IC IB

emitter voltage 2SC3973A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature

V V V A A A W C C

Solder Dip

s Absolute Maximum Ratings

4.0

7.50.2

1:Base 2:Collector 3:Emitter TO220 Full Pack Package(a)

PC Tj Tstg

s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC3973 2SC3973A

(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 4A IC = 4A, IB = 0.8A IC = 4A, IB = 0.8A VCE = 10V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 0.8A, IB2 = 1.6A, VCC = 200V 20 1.0 3.0 0.3 500 15 8 1.0 1.5 V V MHz s s s min typ max 100 100 100 Unit A A V

Power Transistors
PC Ta
60 12 (1) TC=Ta (2) With a 100 100 2mm Al heat sink (3) With a 50 50 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C 10

2SC3973, 2SC3973A
IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 TC=100C 25C

VCE(sat) IC

Collector power dissipation PC (W)

50 (1) 40

Collector current IC (A)

8 IB=1200mA 6 1000mA 800mA 600mA 400mA 300mA 200mA 2 100mA

30

20 (2) (3) 0 0 20 40 60 80 100 120 140 160 (4)

10

0 0 2 4 6 8 10 12

0.3

10

30

100

Ambient temperature Ta (C)

Collector to emitter voltage VCE (V)

Collector current IC (A)

VBE(sat) IC
100

hFE IC
IC/IB=5 1000 VCE=5V 1000

fT IC
VCE=10V f=1MHz TC=25C

Base to emitter saturation voltage VBE(sat) (V)

Forward current transfer ratio hFE

30

300

Transition frequency fT (MHz)

100

300

10

100

100

30

30

1 25C 0.3

TC=25C 100C

10 TC=25C 25C 100C

10

0.1 0.1

0.3

10

30

100

1 0.1

0.3

10

30

1 0.01 0.03

0.1

0.3

10

Collector current IC (A)

Collector current IC (A)

Collector current IC (A)

Cob VCB
1000 100 IE=0 f=1MHz TC=25C 30

ton, tstg, tf IC
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=IB2) VCC=200V TC=25C tstg 1 0.3 0.1 0.03 ton tf

Area of safe operation (ASO)

100 30 ICP Non repetitive pulse TC=25C

Collector output capacitance Cob (pF)

Switching time ton,tstg,tf (s)

300

Collector current IC (A)

10 3

10 3

IC

t=0.5ms 1ms 10ms DC

100

30

1 0.3 0.1 0.03 0.01

10

1 1 3 10 30 100

0.01 0 1 2 3 4 5 6 7 8

10

30

100

300

1000

Collector to base voltage VCB (V)

Collector current IC (A)

Collector to emitter voltage VCE (V)

Power Transistors
Area of safe operation, reverse bias ASO
8 7 IC Lcoil=30H IC/IB=5 (IB1=IB2) TC100C

2SC3973, 2SC3973A
Reverse bias ASO measuring circuit
L coil IB1 Vin T.U.T IC

Collector current IC (A)

6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800

IB2

VCC

tW

Vclamp

Collector to emitter voltage VCE (V)

Rth(t) t
10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V 0.2A (2W) and without heat sink (2) PT=10V 1.0A (10W) and with a 100 100 2mm Al heat sink

Thermal resistance Rth(t) (C/W)

1000

100

(1)

10

(2)

0.1 104

103

102

101

10

102

103

104

Time t (s)

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