Home | Design Tools | Articles | Resou Contents Abstract Article Rating eee Exuemaly Hb Rate it i Vilata) TOREX DC/DC c€ ead Cog) Power Supply Ipdusty, News NvSMPS | Reoiser | Login | Deslaners | Manufacturers | Lawyers Step-byStep Flyback SMPS Design y prasunkuls. Abstract Prasun kulshrestha, Sr. Design Engineer Hardware, Intellect Systeme (I) Pvt Ltd., Nagpur, INDIA. Abstract: The approach of this article is to develop a sequential approach of practically esigning the SMPS design Which are examined by me for years practically. The aim's to look on ground levels to clear fundamentals inteligence regarding SMPS. Thad never seen Easy & step- by-step calculations to ideally decide the nature of SMPS. The Step-by-step caleuations ilustrated in ths article wil help you to actually see the practical result on paper before performing t practically. This alo include the expertise tins wherever tis Sesired for elther caution or for intelligence. Moreover, when you will make the actual schematic using these calculations, you will just eee a perfect guidance for implementing correct component data book. Twas also looking ‘to include the probable components that could be referred but finaly I amnot including fn ‘his. Universal Block Diagram wane [pre Power Sumir | see Smoothing oy | Prater ‘rau : Flee Wish Sac Sims Je Ea os Fig: Pras: Introduction Designing the system step-by step could be realized below. Moreover the block diagram ‘above is a self-explanatory Universal block diagram of SMPS. Thad enlisted the Sequential formulas below which wil clear the insight towards SMPS. [A Step by step Designing Formulas: IC No information is available , just assume Ef 75 for low output applications & 0.85 for high voltage applications. 1. Maximum input power: Pin =Po/ Et Put Eff = as discussed above. 2. Load occupying factor: iNow, if we have fo take multiple outputs from smps,the load occupying factor ( KLn) must bee found as- Kan=Po(n/Po Here, Po(n) is the rraximum output power for nth output. Usually, If single output fromsmps is desired, key rule is to consider KL = 13. Input capacttor Selection: It is algo known as OC lnk capackor. ‘The unwversal approach shouldbe to fist recognize the few parameters as Vac max; Vac min ; switching frequency ; line frequency & output power; This would clear the nature of quality of an Ideal SMPS you are looking at, ‘The key rule to decige the value of Dc link capacitor as 2-3 micro farac per watt of input range ( 85-265vims) & 1 micro ferad per watt of Input power of European range ( 195v 2esvers) Aso, take my experience suggestion to use DC ink capacitor more than 2 micro farad per ‘watt of input range so as to get better quality of DC output. Also, for 230 v mains line, select the capacitor of min 400 v rating, It is because that we ‘may use fectifier device which may multiply the input with the factor of 1.41 3, Min DC tink voltage: Ve min = sprt( 2* ( v tne min )42-Pin ( 1-Deh / Cac. FI) Where , Deh- a¢ link capacitor charging duty ratio. Deh is 0.2 to 0.25 Deh = 1 /t2 4, Maximum de lk voltage Vide max = sqrt (2 )* V line max 5, maximum DC link ripple voltage: Change in Vde max = sart (2) * Vin rin ~ V de erin While calculating this factor, care should be taken as accuracy of this factor affects the systema lot. 6, output reflected voltage: Vro = Drax® vde min / (1- Drax) 7. Maximum MOSFET voltage Vds nom = Vde max 4Vro Where Ve min & Vde max is already calculated in step 3.84, Practical approach key rule: For step 6&7; I we decrease the value of Drax, the voltage stress over MOSFET can be reduced suitably But this willin tum increase the voltage stress over rectifier diode in the secondary sie. Se Twould suggest with my experience to Select Dmax as large as possible ifthe voltage rating of MOSFET allows, 8, Designing The Inductance of the transformer primary side Lm Lins (Vee min * Omax)square / (2 Pin * Fs * Kit) Where Lm- primary incuctance F s- switching Frequency Kif- riage factor in full ad & min input voltage. Key nut For discontinuous mode , set kef =1 For continuous mode, set kef <1 IF you are making flyback converter to be operated in CCM mode, just prefer to set kr between 0.25 ~ 0.5 for universal input range & kif = 0.4 ~ 0.8 for European input range. 9. Tds peak ede + ( Change in current / 2) 10, Ids rvs = sqrt((3* (Lede)square + ( change incurrent / 2 )square)Dmax / 3) LL where Jede = Pin / (Ve min * Drax) 12, Also, change in current = Vae min * D max / (Lav Fs) 13, Vode in cem mode = [1/(sart(2*Lm*tS*Pin))-1/Vro]*(-1) Key rule: If the result of equation 13 is in negative value, the converter is always In CCM uncer full load condition regardless of the input voltage variation 14. Np (min) =[ Lint lim * 10°(6) / ( Bsat * Ae)] (tums) Where lim - pulse by pulse current limit level Ae = cross section area of the core Beat = saturation flux density in teslaKey rule: if no information is avalable regarding Bsat,for generalized smps, set Bsat betwee: 0.3 to 0.35 tesla 15. Transformer Gesion Np/Ns1] =[Vrd/ ( VOuAVEE )] Where No- number of tums of primary side Nel- number of tums of reference output vo1 ~ output voltage VFI - Diode forward vokage drop of the reference output Key suggestion: Now, determine the proper integer number for NS so that resulting Np Is larger than Np min Obtained from step 14, 16. The number of tums for the other output , nth output, is determined as: Ns (n) = [VO (n) + F(a) Ns1] / [VOL +¥F2 J turns 17. The number of turns for VOe winding is determined as Na'= [Vee + Vea /( VOL + VFL) ]* Nei tums Where Vec ~ norrinal voltage for Vec. far Diode forward voltage drop. 18, with deterring tums of the primary side, the gap length of the core is obtained as G40" 3.14 * Ae [ {Np*(2)/ 1000Lm}- 1/8] units in ram Where Ak Al value with no gap in nki/turns (2) Ae = Cross section area of the core, Np =o. of tums for prirary side of the transformer. 19: The RMS current of the nth secondary winding is obtained as sec (n)ms = 1 65 rms sqrt [ (1-Dmax/Drax)] * vio * Kin / (Von + VEn > Where Von ~ output voltage of nth output V tn = diode forward volage drop Kin ~ load occupying factor for nth output cefined in equation 2. Key information: ‘The current density ie SA / mm2 when the wire is long (> Im). when the wire is short with ¢ small number of turns , a current density of 6-10 A/mm is also acceptable. Avoid using wire with & diameter larger than Lim to avoid severe eddy current losses as Wwell as to make winding easier For high current output, It is better to use parallel winding with multiple strands of thinner Wire to minimize skin effect. 19. The required winding window area is given by Aw = Ae KE Where Ac - actual conductor area Kf = Fill factor Key to Usually, fill factor sin between 0.2 to 0.25 for single output application, For, mukiple output, ic Is in between 0.15 to 0.2. 20. The maxirum voltage & the rms current of the rectifier dlode of the nth output are obtained os Ve = Von + Vde max [ Von + fn }/ Veo 2A: dn rms = Ids ems sqrt (1+ Drax /Omax ) * Vro * in/ ( Von + Vin } where von ~ output voltage of nth output Vin- diode forward drop. 22. The typical voltage & current margins for rectifier diode are as follows: Vien > 1.3 * Ven 23.1f > 1.5 * Len rms where , for eauation 23 & 23.