ECE335F Introduction to Electronic Devices

University of Toronto ~ 1 ~ LEONGKR

Constants:
b = 6.626 1u
-34
J s k
B
= 1.S81 1u
-23
J/K c = S 1u
8
m/s c = 1.6 1u
-19
C
m
0
= 9.11 1u
-31
kg e
0
= 8.8S4 1u
-14
F/cm N
A
= 6.u22 1u
23
atoms
mol

v
t
=u.u2S9v ( SuuK)
Table 1: Material properties
N
C

@ 300 K
( 1u
19
cm
3
)
N
v

@ 300 K
( 1u
19
cm
3
)
m
n
-
m
0
m
p
-
m
0
E
g
(eV) e

_
(V)
Breakdown
field F
ct

(V/cm)
n

@ 300 K
(cm
3
)
Si 2.8 1.u4 1.u8 u.S6 1.12 11.7 4.u1 S 1u
5
1.S 1u
10
Ge 1.u4 u.6 u.SS u.S7 u.66 16 4.1S 8 1u
4
2.4 1u
13
GaAs u.u47 u.7 u.u67 u.48 1.42 1S.1 4.u7 S.S 1u
5
1.8 1u
6
SiO
2
-- 8 to 9 S.9 6 to 9 1u
6
--

GENERAL EQUATIONS: z =
h
p
E
photon
= bv = b
c
Z

g
C
(E) =
4n(2m
n
-
)
3 2
b
3
E -E
C
g
v
(E) =
4n(2m
p
-
)
3 2
b
3
E
v
-E
N
C
= 2 _
2nm
n
-
k
B
I
b
2
]
3 2
N
v
= 2 _
2nm
p
-
k
B
I
b
2
_
3 2

P
(E) =
1
1 +c
(L-L
F
) k
B
1

n
0
= N
C
c
-(L
C
-L
F
) k
B
1
p
0
= N
v
c
-(L
F
-L
v
) k
B
1
n
0
= n

c
(L
F
-L
Fi
) k
B
1
p
0
= n

c
(L
Fi
-L
F
) k
B
1

n
0
p
0
= n

2
n
0
+N
A
= N

+p
0

n
0
= _
N

-N
A
2
] +
_
_
N

-N
A
2
]
2
+n

2
p
0
= _
N
A
-N

2
] +
_
_
N
A
-N

2
]
2
+n

2

R = p
I
Arco
= R
S
I
w
p =
1
o
=
1
c(p
n
n +p
p
p)
R
S
=
p
x
]
=
k
B
I
q
p
[
totuI
= [
n
+[
p
[
n
= qp
n
nF +q
n
vn [
p
= qp
p
pF -q
p
vp
J
2
v
Jx
2
= -
JF
Jx
= -
p
e
I
n
=
n

n
I
p
=
p

p
n = n
0
+on p = p
0
+op

p
o
2
p
ox
2
-p
p
_F
op
ox
+p
oF
ox
] +g
p
-
p

pt
=
op
ot

n
o
2
n
ox
2
+p
n
_F
on
ox
+n
oF
ox
] +g
n
-
n

nt
=
on
ot

p
o
2
(op)
ox
2
-p
p
F
o(op)
ox
+ g' -
op

p0
=
o(op)
ot
foi low injection ntype mateiial

n
o
2
(on)
ox
2
+p
n
F
o(on)
ox
+g
i
-
on

n0
=
o(on)
ot
foi low injection ptype mateiial
PN JUNCTIONS:
w = _
2e
S
(I
b
+I
R
)
q
N
A
+N

N
A
N

I
b
=
k
B
I
q
ln _
N
A
N

2
_
w
n
= _
2e
S
(I
b
+I
R
)
q
N
A
N

(N
A
+N

)
w
p
= _
2e
S
(I
b
+I
R
)
q
N

N
A
(N
A
+N

)

F
mux
= -
qN

w
n
e
S
= -
qN
A
w
p
e
S
F
ct
=
qN

e
_
2e
S
(I
b
+I
B
)
q
1
N

C
i
=
J
JI
=
e
S
w
I
S
= Aqn

2
_

n
I
n
N
A
+

p
I
p
N

_ I = I
S
|c
(qv
D
k
B
1 )
-1]
p
n
(w
n
) = p
n0
c
qv k
B
1
n
p
(-w
p
) = n
p0
c
qv k
B
1

on
p
(x) = n
p
(x) -n
p0
= n
p0
(c
cv
c
k
B
1
-1)c
(w
p
+x) L
n

For p-region on the left side of origin

op
n
(x) = p
n
(x) -p
n0
= p
n0
(c
cv
c
k
B
1
-1)c
(w
n
-x) L
p

For n-region on the right side of origin

r
d
=
I
t
I

C
d
=
1
2I
t
(I
p0

p0
+I
n0

n0
) [
gcn
=
cn

w
2
0
[
cc
=
cn

w
2
0
c
qv 2k
B
1
= [
0
c
qv 2k
B
1

I = I
S
|c
qv nk
B
1
-1]
METALSEMICONDUCTOR:
1
B
= 1
M
-_ I
b
= 1
B
-
n
where
n
= (E
C
-E
P
) c [ = A
-
I
2
c
-c4
E
k
B
1
(c
c v
c
k
B
1
-1)
R
C
=
1
A
-
I
2

k
B
I
c
c
c q
Bn
k
B
1


ECE335F Introduction to Electronic Devices
University of Toronto ~ 2 ~ LEONGKR
MOSFET (NMOS):

S
(mox) = -qN
A
x
dm
= -2(e
S
q N
A

]p
)
1 2

x
dm
= _
2 e
S

S
(in:)
q N
A
_
1 2
= _
4 e
S
k
B
I ln(N
A
n

)
q
2
N
A
_
1 2
x
d
= _
2e
S

S
qN
A
_
1 2

]p
=
k
B
I
q
ln _
N
A
n

] 1
ms
= 1
m
i
-__
i
+
E
g
2q
+
]p
]
C
ox
=
e
ox
t
ox
C
d
=
e
S
x
d
C
dcpI
i
=
C
ox
C
d
C
ox
+C
d
C
PB
i
=
e
ox
t
ox
+[
e
ox
e
S
_[
k
B
I
q
[
e
S
cN
u

I
1N
=
|
S
(mox)|
C
ox
-

SS
i
C
ox
+2
]p
+
ms
I
PB
=
ms
-

ss
i
C
ox
I

(sub) c
v
GS
v
t

|1 -c
-v
DS
v
t

]
NMOSFET in triode region: :
uS
I
1N
and :
uS
-:
S
I
1N

i
S
= K|2(:
uS
-I
1N
):
S
-:
S
2
] K =
1
2
p
n
C
ox
w
I
r
S
= :
S
i
S
= |2K(:
uS
-I
1N
)]
-1

g
mL
=
w
n
C
OX
L
I
S
I
1
=
2 c s
S
N
A
C
OX
|

2
]p
+I
SB
-

2
]p
]
NMOSFET in saturation: :
uS
I
1N
and :
uS
-:
S
I
1N
i
S
= K(:
uS
-I
1N
)
2

I = _
2e
S
qN
A
__
]p
+I
S,sut
+I
S
-_
]p
+I
S,sut
] I
c]]
= I -I
I
S
I
S,sut
=
I
I
c]]

g
ms
=
w
n
C
OX
L
(I
uS
-I
1
)
PMOS:

]n
=
k
B
I
q
ln _
N

] 1
ms
= 1
m
i
-__
i
+
E
g
2q
-
]n
] I
1P
=
-|
S
(mox)|
C
ox
-

SS
i
C
ox
-2
]n
+
ms


BJT:
p
c
(u) = p
c0
|c
qv
BE
k
B
1
-1] n
b
(u) = n
b0
|c
qv
BE
k
B
1
-1]
n
b
(w
b
) = n
b0
|c
-qv
CB
k
B
1
-1] p
c
(u) = p
c0
|c
-qv
CB
k
B
1
-1]
o =
[
1 +[
o = o y o
1
BI
CL0
= BI
CB0
1 -o
n
~ BI
CB0
[
n

[
C
= o [
L
= [ [
B
[
L
= [
nL
+[
pL
[
C
= [
nL
-[
R
[
B
= [
pL
+[
R

on
B
(x) = n
B0
j(c
qv
BE
k
B
1
-1) sinh[
x
B
-x
I
B
-sinh[
x
I
B
[
sinh
x
B
I
B
~
n
B0
x
B
|(c
qv
BE
k
B
1
-1)(x
B
-x) -x]
y =
[
nL
[
nL
+[
pL
=
1
1 +

L
p
L0
I
B

B
n
B0
I
L
tanh(x
B
I
B
)
tanh(x
L
I
L
)
o
1
=
[
nC
[
nL
~
1
cosh(x
B
I
B
)
~ 1 -
1
2
_
x
B
I
B
]
2

o =
[
nL
+[
pL
[
nL
+[
pL
+[
R
=
1
1 +
[
0
[
S0
c
-cv
BE
2k
B
1
[
S0
=
c
B
n
B0
I
B
tanh(x
B
I
B
)
I
C
= g
0
(I
CL
+I
A
)
Ebers-Moll Model: o
P
I
LS
= o
R
I
CS
= I
S

I
C
= o
P
I
LS
(c
qv
BE
k
B
1
-1) -I
CS
(c
qv
BC
k
B
1
-1)
I
L
= o
R
I
CS
(c
qv
BC
k
B
1
-1) -I
LS
(c
qv
BE
k
B
1
-1)

OPTICAL DEVICES:
I
v
= I
v0
c
-ux
g
i
=
o I
v
(x)
b v
FF =
I
m
I
m
I
SC
I
0C
p =
P
m
P
n
=
I
m
I
m
P
m
I = I
L
-I
S
|c
v v
t

-1]
I
0C
= I
t
ln _
I
L
I
S
+1] _1 +
I
m
I
t
] c
v
m
v
t

= 1 +
I
m
I
S
0
L
= o(z)
0
()|1 -R()]e
-u(\)x

o = c(op)(p
n
+p
p
) I
L
= c 0
L

p
(p
n
+p
p
)A F
ph
=
I
L
c 0
L
A I
[
L1
= c0
L
w
[
L
= c(w +I
n
+I
p
)0
L
[
L
= c
0
(1 -c
-uw
) y =
[
n
[
n
+[
p
+[
R
p =
R

+R
n

R = R

+R
n
=
on

+
on

n
p

= yp =
n
2
-n
1
n
2
+n
1
n
1
sin0
1
= n
2
sin0
2

I
v
= I
v
(u)c
y(v)z
N_
z
2
] = I
1

2
e
2|y
t
(v)-u(v)]L
= 1 [
th
=
1
[
_o +
1
2I
ln _
1

2
]_