TOSHIBA TC7SHO4F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SHO4F, TC7SHO4FU INVERTER The TC7SHO4 is an advanced high speed CMOS INVERTER fabricated with silicon gate C?MOS technology. t achieves The high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. An input protection circuit ensures that 0 to 7V can be applied to the input pins without regard to the supply voltage. This device can be Used to interfase SV to 3V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages. TC7SHOAF ss0P5-7-0.95 ‘Te7sHoaru FEATURES. © High Speed © Low Power Dissipation “+= lec = 2A (Max) at Ta=25'c =VNIL © High Noise Immunity $5095.0.0554 28% Vcc (Min) Weight SSOPs-F.095, 00369 (Typ) © Power Down Protection is provided on all inputs. ‘SSOPS5-P-0.65A : 0.0069 © Balanced Propagation Delays ~ toLHStpHL © Wide Operating Voltage Range~~- Vcc (opr) = 2~5.5V MAXIMUM RATINGS MARKING PARAMETER: ‘SYMBOL Lo Supply Voltage Range O57 A DC Input Voltage Vin =05=70 |v WB DC Output Voltage Vout | -05-Vec +05] V oe input Diode Current Th =20 mA ‘Output Diode Current TOK £20 mA, ‘TRUTH TABLE DC Output Current Tour $25 mA aly DC Vcc/Ground Current Tec £50 ma} -ot Power Dissipation PD 200 | mW ca Storage Temperature Tag =e~150_| °C ead Temperature (105) TL 260 ca “© TOHImA « conimaly wong fo mprove ihe Guill) ond te relabiy of Wy produce, Nevanhaen_ semconduca, depces Ty general cn wai fs radi ipcmene “anda of ‘sey, sedge Situations ine maint fier Fos rode eats Sparating ranger at tat forth in the Bont recone products specthetions: Ao Bleae Kegp i mind the precautions and condivone ee¢ for i the TOSitaeSemiendue: Relay Handbook 1997-04-07 1/5TOSHIBA TC7SHO4F/FU LOGIC DIAGRAM PIN ASSIGNMENT (TOP VIEW) se PElvec NA re] eno | {[Jour v wat oury RECOMMENDED OPERATING CONDITIONS PARAMETER syMBoL VALUE UNIT Supply Valtage Vee TO=55 v Input Voltage MIN 0~5.5 Vv Output Voltage Vout 0=Vee Vv Operating Temperature Tope =a0=85 °C Input Rise and Fall Ti de/dy | Ore Wec=ssz0eM | oy put Rise and Fall Time See DC ELECTRICAL CHARACTERISTICS TEST Ta=a5c Tanase PARAMETER |SYMBOL|CIR:| TEST CONDITION uni curr Vee [min [ Tv. [Max.| win. [MAX vghlev Iepu 20150 —] — 150] — Higher | ys | _ geelvce ve y foltage 55}x07| — | | x07 Low-Level input 207 =] = 7 280) — 7 oso vu | = - so~| | _ | vee} _ | vee] v voltage 55 x03 x03 Zo | 1s; 20] — | 18 30} 29|30| — | 29 Cioh teveltage | YOR | — 45 | aa|as|—| a4] —| v putVoltag 30 | 258) — | — | 248) — = | = | 320] — oo} oa] — | oa Low Level oo} o1| — | oa ow Lev vou | — |vw=vii oo | o1| — | o4| v utput-vottage oo tT | — | 0.36] — | 044 fapateafone (| — [uy=5v or GND — [zor] — fer Quiescent Supply un Quiesce tec | — |viv=Vec oF 6nd ss|—]—| 20] — | 200 scious Te TLS GREG STE an a ame iveleBin tests anes thes a Me Rye, BASE SASH NE 9 Reels rtd tae ae ute ar noea SY ONOA ONOTATIN of ore 1997-04-07 215TOSHIBA AC ELECTRICAL CHARACTERISTICS (Input t,=t¢=3ns) TC7SHO4F/FU rest] TEST CONDITION Ta=25C a= -a0~as¢ parameter |symBoL| cin- unit cuit! Vee (Wei (PF)| MIN. | TYP. [MAX.| MIN. [MAX. z3s031_> | — | 50] 71] 10] 85 Propagation ‘PLM *03/S0 | — [75 | 10.6] 1.0 | 12.0 Delay Time teat | _ : 1 |—|38| 55/10] 65] ™ 5.0205 50 — [53] 75/10] 85 Input Capacitance| Gy | — = =| 4} [=| 10 Power Dissipation pF Capacitance Cpp — |Note (1) - wl}—-|-—|— Note (1) : Cpp is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation "cc (opr) INPUT EQUIVALENT CIRCUIT input POVccIN + !cc 1997-04-07 3/5