CHNG 2

LINH KIN IN T

Ni dung chng 2

1. Gii thiu chung 2. Linh kin th ng (Passive Components) 3. Mt s linh kin bn dn (Semiconductor) 4. Mt s cu kin quang in t (OptoElectronic Devices)

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Chng 2

1. Gii thiu chung (1)

- Cu kin in t l cc phn t linh kin ri rc, mch tch hp (IC) to nn mch in t hoc cc h thng in t. - Cu kin in t ng dng trong nhiu lnh vc, ni bt nht l ng dng trong lnh vc in t, Vin thng, CNTT. - Cc linh kin bn dn nh diodes, transistors v mch tch hp (ICs) c th tm thy khp ni trong cuc sng (Walkman, TV, t, my git, my iu ho, my tnh). Chng ta ngy cng ph thuc vo chng v nhng thit b ny c cht lng ngy cng cao vi gi thnh r hn. - Cng ngh ch to linh kin in t pht trin mnh m, to ra nhng vi mch c mt rt ln (Vi x l Intel - khong hn 1,3 t transistor) - Xu th cc cu kin in t c mt tch hp ngy cng cao, c tnh nng mnh, tc ln
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1. Gii thiu chung (2)

Chips Sand Chips on Silicon wafers

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Chng 2

1. Gii thiu chung (3) Silicon Process 1.5 Technology Intel386TM DX Processor Intel486TM DX Processor Pentium Processor Pentium Pro & Pentium II Processors
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1.0

0.8

0.6

0.35 0.25

45nm Nowadays!

PHN 1 LINH KIN TH NG

(Passive Components)

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Chng 2

2. Linh kin th ng (Passive Components)

2.1. in tr (Resistor) 2.2. T in (Capacitor) 2.3. Cun cm (Inductor) 2.4. Bin p (Transformer)

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Chng 2

2.1. in tr (1)
1. 2. 3. 4. 5. c im v k hiu ca in tr Tr s in tr v dung sai H s nhit ca in tr Cng sut tiu tn danh nh Cch ghi c in tr

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Chng 2

2.1. in tr (2)
2.1.1. c im v k hiu ca in tr - in tr l phn t c chc nng ngn cn dng in trong mch. Mc ngn cn dng in c c trng bi tr s in tr R. - n v o: m, , k, M - in tr c rt nhiu ng dng nh: nh thin cho cc linh kin bn dn, iu khin h s khuych i, c nh hng s thi gian, phi hp tr khng, phn p, to nhit Ty theo ng dng, yu cu c th v da vo c tnh ca cc loi in tr la chn thch hp. - Cu to n gin ca mt in tr thng:
M chp v chn in tr

V bc
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Li

Vt liu cn in
Chng 2

2.1. in tr (3)
Cc k hiu ca in tr

in tr thng

Bin tr

0,25W

0,5W 10 W

1W in tr cng sut

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Chng 2

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2.1. in tr (4)
2.1.2. Tr s v dung sai ca in tr l Tr s ca in tr: (Resistance [Ohm]-): R = S Trong : - l in tr sut ca vt liu dy dn cn in l - l chiu di dy dn S- l tit din ca dy dn - Dung sai hay sai s (Resistor Tolerance): Biu th mc chnh lch ca tr s thc t so vi tr s danh nh ca in tr v tnh theo %.
R t . t R d .d 100 % R d .d

Ty theo dung sai phn chia in tr thnh 5 cp chnh xc (tolerance levels): Cp 005: c sai s 0,5 % Cp II: c sai s 10 % Cp 01: c sai s 1 % Cp III: c sai s 20 % Cp I: c sai s 5 %
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2.1. in tr (5) 2.1.3. H s nhit ca in tr

- TCR (temperature coefficient of resistance): biu th s thay i tr s ca in tr theo nhit , c tnh nh sau:
TCR = 1 R .10 6 . R T [ppm/ 0 C]

R R = 6 TCR.T 10

- TCR l tr s bin i tng i tnh theo phn triu ca in tr trn 1C (vit tt l ppm/C). - H s nhit ca in tr c th m hoc dng ty loi vt liu: + Kim loi thun thng h hng s nhit dng. + Mt s hp kim nh constantin, manganin c h s in tr nhit 0 + Carbon, than ch c hng s in tr nhit m
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2.1. in tr (6) 2.1.4. Cng sut danh nh

Pt.t.max l cng sut in cao nht m in tr c th chu ng c trong iu kin bnh thng, lm vic trong mt thi gian di khng b hng.

Pt.t.max = R.I2 max

2 U max = R

[W ]

Cng sut tiu tn danh nh tiu chun cho cc in tr dy qun nm trong khong t 1W n 10W hoc cao hn nhiu. ta nhit pht sinh ra yu cu din tch b mt ca in tr phi ln, do vy, cc in tr cng sut cao u c kch thc ln. Cc in tr than l cc linh kin c cng sut tiu tn danh nh thp, nm trong khong 0,125W; 0,25W; 0,5W; 1W v 2W.

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Chng 2

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2.1. in tr (7) 2.1.5 Cch ghi v c tham s trn thn in tr

- Cch ghi trc tip: ghi y cc tham s chnh v n v o trn thn ca in tr, v d: 220K 10%, 2W. - Cch ghi theo quy c: c rt nhiu cc quy c khc nhau. Xt mt s
cch quy c thng dng: + Quy c n gin: Khng ghi n v m, R (hoc E) = , M = M, K = K V d: 2M=2M; 0K47 =0,47K = 470; 100K = 100 K, 220E = 220, R47 = 0,47 + Quy c theo m: M ny gm cc ch s v mt ch ci ch % dung sai. Trong cc ch s th ch s cui cng ch s con s 0 cn thm vo. Cc ch ci ch % dung sai qui c: F = 1%, G = 2%, J = 5%, K = 10%, M = 20 %.

V d: 103F = 10.103 = 10000 1% = 10K 1% 153G = 15000 2% = 15 K 2% 4703J = 470000 5% = 470K 5%

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2.1. in tr (8)
+ Quy c theo m mu: - Loi 4 vng mu:
Mu en Nu Cam Vng Lc Gi tr 0 1 2 3 4 5 6 7 8 9 5% 10% 20%
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Nu-en--vng kim = ? - Loi 5 vch mu:

1 2 3 4 5

Lam Tm Xm Trng Vng kim Bch kim Khng mu

(Nu-en-en--Khng mu) = ?
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2.1. in tr (9) 2.1.6. Hnh nh ca mt s loi in tr

in tr dy cun chnh xc - Sai s nh : 0,005%
- TCR= 3ppm/0C - p ng tn s tt, tn s cng hng cao, dng nhiu trong ng dng tn s RF, - Cng sut nh. - Thng c dng trong cc thit b o DC chnh xc cao, in tr chun cho cc b iu chnh in p, mch bin i DAC.

Chun NIST (National Institute of Standards and Technology) - Sai s rt nh : 0,001%

- TCR= 3ppm/0C - p ng tn s tt, tn s cng hng cao, dng nhiu trong cc thit b o, kim chun.
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2.1. in tr (10)
in tr dy cun cng sut ln

in tr film cacbon

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Chng 2

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2.1. in tr (11)
in tr cu ch in tr l kim loi

in tr film oxit kim loi

in tr SMD

in tr SMD (surface mount devices) - Loi linh kin gn trn b mt mch in, s dng trong cng ngh SMT (Surface mount technology) # (through-hole technology).
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Chng 2

2.1. in tr (12)

1/4W resistors

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Chng 2

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2.1. in tr (13)

Potentiometers

Carbon composition

Carbon film

Metal film

Surface Mount Resistors (SMR) High Power (wire wound; ceramic)

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Thermistor Light dependent resistor (LDR)

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2.2. T in (Capacitors)

1. 2. 3. 4. 5.

nh ngha, k hiu ca t in Cc tham s k thut chnh ca t in Cch ghi v c tham s trn t in Phn loi v ng dng ca t in Mt s hnh nh ca t in

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Chng 2

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2.2. T in (2)
2.2.1. nh ngha, k hiu ca t in
-T in l linh kin dng cha in tch. Mt t in l tng c in tch bn cc t l thun vi hiu in th t trn n theo cng thc: Q = C.U [culng] Cht in mi Bn cc Chn t V bc

-Dung dung ca t in C [F]

Q .S C= = r 0 U d
r h s in mi tng i 0 - hng s in mi ca chn khng
0 =
1 = 8,84.1012 ( F / m) 36 .109

S - din tch hu dng ca bn cc [m2] d - khong cch gia 2 bn cc [m] - n v o C: F, F, nF, pF

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2.2. T in (3)
Cc k hiu ca t in

+ T thng

+ T in gii T c in dung thay i (Bin dung)

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Chng 2

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2.2. T in (4) 2.2.2. Cc tham s k thut chnh ca t in

+ Tr s dung lng (C) + Dung sai ca t in: y l tham s ch chnh xc ca tr s dung lng thc t so vi tr s danh nh ca n. Dung sai ca t in c tnh theo cng thc: C t . t C d .d .100% C d .d + in p lm vic: in p cc i c th cung cp cho t in hay cn gi l "in p lm vic mt chiu, nu qu in p ny lp cch in s b nh thng v lm hng t. + Di nhit lm vic: Mi mt loi t in chu mt nh hng vi khong nhit do nh sn xut xc nh. Khong nhit tiu chun thng t: -400C n +650C -200C n +650C; -550C n +1250C
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2.2. T in (5)
2.2.3. Cch c v ghi tr s trn t - Hai tham s quan trng nht thng c ghi trn thn t in l tr s in dung (km theo dung sai sn xut) v in p lm vic (in p ln nht). C 2 cch ghi c bn: - Ghi trc tip: cch ghi y cc tham s v n v o ca chng. Cch ny ch dng cho cc loi t in c kch thc ln. V d: Trn thn mt t mi ca c ghi: 5.000PF 20% 600V - Cch ghi gin tip theo qui c : + Ghi theo qui c s: Cch ghi ny thng gp cc t Plystylen V d: Trn thn t c ghi 47/630: C = 47 pF, v in p lm vic mt chiu l 630 Vdc. + Quy c theo m: Ging nh in tr: V d: 123K/50V C = 12000 pF 10% v in p lm vic ln nht 50Vdc. (Tham kho thm ti liu th nghim)
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2.2. T in (6)
2.2.4. Phn loi v ng dng ca t in - Phn loi theo cht in mi hoc phn loi theo tr s in dung c nh hoc thay i... a. T in c tr s in dung c nh + T giy: cht in mi l giy, thng c tr s in dung khong t 500pF n 50F v in p lm vic n 600 Vdc. T giy c gi thnh r nht so vi cc loi t c cng tr s in dung.
u im: kch thc nh, in dung ln. Nhc im: Tn hao in mi ln,

+ T mng cht do: cht in mi l cht do, c in tr cch in ln hn 100000 M. in p lm vic cao khong 600V. Dung sai tiu chun ca t l 2,5%; T mng cht do nh hn t giy nhng t hn. Gi tr in dung ca t tiu chun nm trong khong t 5pF n 0,47 F.
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2.2. T in (7)
+ T mi ca: cht in mi l mi ca, gi tr in dung khong t 1pF n 0,1F v in p lm vic cao c th n 3500V. Tn hao in mi nh, in tr cch in rt cao, chu c nhit . Gi thnh ca t cao + T gm: cht in mi l gm. Gi tr in dung ca t gm tiu chun khong t 1pF n 0,1F, vi in p lm vic mt chiu n 1000 Vdc c im ca t gm l kch thc nh, in dung ln, c tnh n nh rt tt, c th lm vic lu di m khng lo ho. + T du: cht in mi l du. T du c in dung ln, chu c in p cao. C tnh nng cch in tt, c th ch to thnh t cao p. Kt cu n gin, d sn xut.

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Chng 2

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2.2. T in (8)
+ T in gii nhm: Cu trc c bn l ging t giy. Hai l nhm mng lm hai bn cc t cch nhau bng lp vi mng c tm cht in phn (dung dch in phn), sau c qun li v cho vo trong mt khi tr bng nhm bo v. Cc t in gii nhm thng dng thng lm vic vi in p mt chiu ln hn 400Vdc, trong trng hp ny, in dung khng qu 100F. in p lm vic thp v dng r tng i ln + T tantan: (cht in gii Tantan) y l mt loi t in gii, Bt tantan c c c thnh dng hnh tr, sau c nhn chm vo mt hp cha cht in phn. Dung dch in phn s thm vo cht tantan. Khi t mt in p mt chiu ln hai chn t th mt lp oxit mng c to thnh vng tip xc ca cht in phn v tantan. T tantan c in p lm vic ln n 630Vdc nhng gi tr in dung ch khong 3,5F.

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Chng 2

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2.2. T in (9)
b. T in c tr s in dung thay i + Loi a dng cn gi l t xoay: T xoay c dng lm t iu chnh thu sng trong cc my thu thanh, v.v.. T xoay c th c 1 ngn hoc nhiu ngn. Mi ngn c cc l ng xen k, i nhau vi cc l tnh (l gi c nh) ch to t nhm. Cht in mi c th l khng kh, mi ca, mng cht do, gm, v.v.. + T vi iu chnh (thng gi tt l Trimcap), c nhiu kiu. Cht in mi cng dng nhiu loi nh khng kh, mng cht do, thu tinh hnh ng... Trong cc loi Trimcap chuyn dng, thng gp nht l loi cht in mi gm. thay i tr s in dung ta thay i v tr gia hai l ng v l tnh. Khong iu chnh ca t t 1,5pF n 3pF, hoc t 7pF n 45pF v t 20pF n 120pF tu theo h s nhit cn thit.

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Chng 2

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2.2. T in (10)
ng dng ca t in + T khng cho dng in mt chiu qua nhng li dn dng in xoay chiu, nn t thng dng cho qua tn hiu xoay chiu ng thi vn ngn cch c dng mt chiu gia mch ny vi mch khc, gi l t lin lc. + T dng trit b tn hiu khng cn thit t mt im trn mch xung t (v d nh tp m), gi l t thot. + T dng lm phn t dung khng trong cc mch cng hng LC gi l t cng hng. + T dng trong mch lc gi l t lc. T dng trong cc mch chia di tn lm vic, t cng hng v.v.. T dng cho mc ch ny thuc nhm chnh xc. + Cc t trong nhm a dng dng lin lc, lc ngun in, thot tn hiu... ngoi ra t cn dng tr nng lng, nh thi... + Do c tnh np in v phng in, t dng to mch nh gi, mch to xung rng ca, mch vi phn v tch phn...
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2.2. T in (11)
2.2.5. Mt s hnh nh ca t in T ho (Electrolytic Capacitors)

T Tantan (Tantalum Capacitors)

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Chng 2

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2.2. T in (12)
T gm (Ceramic Capacitors) T gm nhiu tng (Multilayer Ceramic Capacitors )

T film nha (Polystyrene Film Capacitors)

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Chng 2

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2.2. T in (13)

T Mica

Bin dung

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Chng 2

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2.2. T in (14)
T gm hn dn T tantalum xuyn l

T tantalum hn dn

T ha

Kch thc theo cm

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2.2. T in (15)

Tantalum capacitor

Polypropylene Capacitor

Polyester capacitor

High voltage/power Capacitors

Multilayer Chip Ceramic capacitor

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Motor Running & Start Capacitors

Chng 2

Variable Capacitor

Tuning/Air Variable Capacitor

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2.2. T in (16)

Paper capacitor (300pF 4F); max 600Volts

Mica capacitor (50pF -0.02F)

Ceramic Capacitor (1pF 0.01F); max 30kVolts

Oil capacitor (nF sevaral hundred F) several ten Kvolts

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Top view of MEMS capacitor built at Stanford. The resonant frequency is 1.64 MHz.
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2.3. Cun cm (Inductor)

a. Khi nim. Cun cm l phn t sinh ra hin tng t cm khi c dng in bin thin chy qua n. Khi dng in qua cun cm bin thin s to ra t thng thay i v mt sc in t c cm ng ngay trong cun cm hoc c th cm ng mt sc in t sang cun cm k cn vi n. Mc cm ng trong mi trng hp ph thuc vo t cm ca cun cm hoc s h cm gia hai cun cm. Cc cun cm c cu trc c gi tr cm ng xc nh. Cun cm cng c th u ni tip hoc song song. Ngay c mt on dy dn ngn nht cng c s cm ng.

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Chng 2

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2.3. Cun cm (2) b. K hiu v mt s hnh nh ca cun cm

L Cun dy li Ferit L Cun dy li st t L Cun dy li khng kh

SMD Wound Chip Inductor

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Chng 2

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2.3. Cun cm (3) b. K hiu v mt s hnh nh ca bin p

a. Bin p m tn

b. Bin p ngun li st v bin p t ngu

c. Bin p cao tn khng li

d. Bin p li Ferit

e. Bin p trung tn

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Chng 2

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2.3. Cun cm (4)

c. Cc tham s k thut c trng ca cun cm a) t cm (L) S L = .N 2 . l
Trong : S - l tit din ca cun dy (m2) N - l s vng dy l - l chiu di ca cun dy (m) - t thm tuyt i ca vt liu li (H/ m)

n v o: H (Henry) t thm tuyt i ca mt s loi vt liu

Chn khng: 4 x 10-7 H/m Khng kh: 1.257x10-6 H/m Nickel 7.54x10-4 H/m Ferrite T38 1.26x10-2 H/m Ferrite U M33 9.42x10-4 H/m

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Chng 2

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2.3. Cun cm (5)

d. Cch ghi v c tham s trn cun cm - Ghi trc tip: cch ghi y cc tham s t cm L, dung sai, loi li cun cm Cch ny ch dng cho cc loi cun cm c kch thc ln. - Cch ghi gin tip theo qui c : + Ghi quy c theo mu: Dng cho cc cun cm nh
1,2,3,4

Vng mu 1: ch s c ngha th nht hoc chm thp phn Vng mu 2: ch s c ngha th hai hoc chm thp phn Vng mu 3: ch s 0 cn thm vo, n v o l H. Vng mu 4: ch dung sai %.
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Chng 2

2.3. Cun cm (6)

V d: + Xc nh gi tr ca cun cm c nh du m mu l: -vng-en-bch kim. + Tm m mu ca cun cm c tr s 470H? Mu en Nu Cam Vng Lc Lam Tm Xm Trng Vng kim Bch kim Khng mu
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Gi tr 0 1 2 3 4 5 6 7 8 9
Chm thp phn

Dung sai 0 1 2 3 4 5 6 7 8 9 5% 10% 20%

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2.3. Cun cm (7)

e. Phn loi v ng dng Da theo ng dng: + Cun cng hng cun cm dng trong cc mch cng hng LC. + Cun lc cun cm dng trong cc b lc mt chiu. + Cun chn dng ngn cn dng cao tn, v.v.. - Da vo loi li ca cun cm: + Cun dy li khng kh: Loi cun dy khng li hoc cun trn cc ct khng t tnh, thng dng l cc cun cng hng lm vic tn s cao v siu cao. + Cun cm li st bi: Dng bt st nguyn cht trn vi cht dnh kt khng t tnh l li cun cm, thng dng tn s cao v trung tn. Cun dy li st bi c tn tht thp, c bit l tn tht do dng in xoy ngc, v t thm thp hn nhiu so vi loi li st t.

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Chng 2

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2.3. Cun cm (8)

+ Cun cm li Ferit : thng l cc cun cm lm vic tn s cao v trung tn. Li Ferit c nhiu hnh dng khc nhau nh: thanh, ng, hnh ch E, ch C, hnh xuyn, hnh ni, ht u,v.v.. Dng li hnh xuyn d to in cm cao, tuy vy li d b bo ha t khi c thnh phn mt chiu. + Cun cm li st t: Li ca cun cm thng hp cht st - silic, hoc st- niken . y l cc cun cm lm vic tn s thp. Dng dy ng c trng men cch in qun thnh nhiu lp c cch in gia cc lp v c tm chng m.

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Chng 2

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