VCR11N

Linear Integrated Systems

FEATURES SECOND SOURCE FOR SILICONIX VCR11N VOLTAGE CONTROLLED RESISTANCE ABSOLUTE MAXIMUM RATINGS @ 25 C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Current Forward Gate Current Maximum Voltages Gate to Drain Voltage Gate to Source Voltage 25V 25V *Contact the factory for surface mount package options and pin outs. 10mA 300mW -65 to +150 C -55 to +135 C
1

N-CHANNEL JFET VOLTAGE CONTROLLED RESISTOR

100 to 200

TO-71 BOTTOM VIEW

G1 D1 S1
2

5 6

S2 D2 G2

ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated) SYMBOL BVGSS VGS(off) IGSS rds(on) rDS(min) rDS(max) Cdgo Csgo CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Cutoff Voltage Gate Reverse Current Dynamic Drain to Source On Resistance Static Drain to Source On Resistance Ratio Drain to Gate Capacitance Source to Gate Capacitance MIN -25 -8 100 0.95 0.95 -12 -0.2 200 1 1 8 8 pF pF TYP MAX UNITS V nA CONDITIONS IG = -1A, VDS = 0V ID = 1A, VDS = 10V VGS = -15V, VDS = 0V VGS = 0V, ID = 0A, f = 1kHz VDS = 100mV, rDS = 2002 VGS1 = VGS2, rDS = 2k2 VGD = -10V, IS = 0A, f = 1MHz VGS = -10V, ID = 0A, f = 1MHz

1. 2.

Absolute maximum ratings are limiting values above which serviceability may be impaired. VGS1 + Control Voltage necessary to force rDS to 200 or 2k.

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