Quantum Dot Lasers

ECE 580 Term Project

Betul Arda Huizi Diwu

Department of Electrical and Computer Engineering University of Rochester

Outline

Quantum Dots (QD)

Confinement Effect Fabrication Techniques

Historical Evolution Predicted Advantages Basic Characteristics Application Requirements

Quantum Dot Lasers (QDL)

Q. Dot Lasers vs. Q. Well Lasers Market demand of QDLs Comparison of different types of QDLs Bottlenecks Breakthroughs Future Directions Conclusion

Quantum Dots (QD)

Semiconductor nanostructures

Size: ~2-10 nm or ~10-50 atoms in diameter

Unique tunability Motion of electrons + holes = excitons

Confinement of motion can be created by: Electrostatic potential

the presence of an interface between different semiconductor materials e.g. in the case of self-assembled QDs the presence of the semiconductor surface

e.g. in e.g. doping, strain, impurities, external electrodes

or by a combination of these

e.g. in the case of a semiconductor nanocrystal

Quantum Confinement Effect

E = Eq1 + Eq2 + Eq3, Eqn = h2(q1/dn)2 / 2mc

Quantization of density of states: (a) bulk (b) quantum well (c) quantum wire (d) QD

QD Fabrication Techniques

Core shell quantum structures Self-assembled QDs and StranskiKrastanov growth

MBE (molecular beam epitaxy) MOVPE (metalorganics vapor phase epitaxy)

Monolayer fluctuations representation of to Gases in remotely Schematic of nanostructures:different approaches in fabrication (a) microcrystallites glass, (b) artificial patterning of thin film structures, (c) doped heterostructures self-organized growth of nanostructures

QD Lasers Historical Evolution

QDL Predicted Advantages

Wavelength of light determined by the energy levels not by bandgap energy:

improved performance & increased flexibility to adjust the wavelength

Maximum material gain and differential gain Small volume:

low power high frequency operation large modulation bandwidth small dynamic chirp small linewidth enhancement factor low threshold current
threshold

Superior temperature stability of I

threshold

(T) = I

threshold

(T ref).exp ((T-(T ref))/ (T 0))

High T 0 decoupling electron-phonon interaction by increasing the intersubband separation. Undiminished room-temperature performance without external thermal stabilization

Suppressed diffusion of non-equilibrium carriers Reduced leakage

QDL Basic characteristics

Components of a laser

An energy pump source

electric power supply

An active medium to create population inversion by pumping mechanism:

photons at some site stimulate emission at other sites while traveling

to reflect the light in phase

Two reflectors:

multipass amplification

QDL Basic characteristics

An ideal QDL consists of a 3D-array of dots with equal size and shape Surrounded by a higher band-gap material

confines the injected carriers. Consists lower and upper cladding layers (n-doped and p-doped shields)

Embedded in an optical waveguide

QDL Application Requirements

Same energy level

Size, shape and alloy composition of QDs close to identical Inhomogeneous broadening eliminated real concentration of energy states obtained

High density of interacting QDs

Macroscopic physical parameter light output

Nanostructures made by high-energy beam patterning cannot be used since damage is incurred Electric field applied can change physical properties of QDs Carriers can be injected to create light emission

Reduction of non-radiative centers

Electrical control

Q. Dot Laser vs. Q. Well Laser

In order for QD lasers compete with QW lasers: A large array of QDs since their active volume is small An array with a narrow size distribution has to be produced to reduce inhomogeneous broadening Array has to be without defects

may degrade the optical emission by providing alternate nonradiative defect channels

The phonon bottleneck created by confinement limits the number of states that are efficiently coupled by phonons due to energy conservation

Limits the relaxation of excited carriers into lasing states Causes degradation of stimulated emission Other mechanisms can be used to suppress that bottleneck effect (e.g. Auger interactions)

Q. Dot Laser vs. Q. Well Laser

Comparison of efficiency: QWL vs. QDL

Market demand of QD lasers

Microwave/Millimeter wave transmission with optical fibers Datacom network Telecom network

QD Lasers

Optics

Market demand of QD lasers

Earlier QD Laser Models

Updated QD Laser Models

Only one confined electron level and hole level Infinite barriers Equilibrium carrier distribution Lattice matched heterostructures

Lots of electron levels and hole levels Finite barriers Non-equilibrium carrier distribution Strained heterostructures

Before and after self-assembling technology

Comparison
High speed quantum dot lasers
Directly Modulated Quantum Dot Lasers Mode-Locked Quantum Dot Lasers

Advantages
Datacom

application Rate of 10Gb/s

Short

optical pulses Narrow spectral width Broad gain spectrum Very low factor-low chirp
Low

InP Based Quantum Dot Lasers

emission wavelength Wide temperature range Used for data transmission

Comparison
High power Advantages Quantum Dot lasers

QD lasers for Coolerless Pump Sources Single Mode Tapered Lasers

Size

reduced quantum dot

Small

shift Temperature insensitivity

wave length

Bottlenecks

First, the lack of uniformity. Second, Quantum Dots density is insufficient. Third, the lack of good coupling between QD and QD.

Breakthroughs
Fujitsu Temperature Independent QD laser 2004

Temperature dependence of light-current characteristics

Modulation waveform at 10Bbps at 20C and 70 C with no current adjustment

Breakthroughs
InP instead of GaAs

Can operate on ground state for much shorter cavity length High T0 is achieved First buried DFB DWELL operating at 10Gb/s in 1.55um range Surprising narrow linewidth-brings a good phase noise and time-jitter when the laser is actively mode locked
Alcatel Thales IIIV Laboratory, France 2006

Commercialization

Zia Laser's quantum-dot laser structures comprise an active region that looks like a quantum well, but is actually a layer of pyramid-shaped indium-arsenide dots. Each pyramid measures 200 along its base, and is 7090 high. About 100 billion dots in total would be needed to fill an area of one square centimeter. -----www.fibers.org

Future Directions

Widening parameters range Further controlling the position and dot size

to

Reduce inhomogeneous linewidth broadening Surface Preparation Technology

using

Decouple the carrier capture from the escape procedure Combination of QD lasers and QW lasers

by

Allowing the injection of cooled carriers

In term of

Raised gain at the fundamental transition energy

Conclusion

During the previous decade, there was an intensive interest on the development of quantum dot lasers. The unique properties of quantum dots allow QD lasers obtain several excellent properties and performances compared to traditional lasers and even QW lasers.

Although bottlenecks block the way of realizing quantum dot lasers to commercial markets, breakthroughs in the aspects of material and other properties will still keep the research area active in a few years. According to the market demand and higher requirements of applications, future research directions are figured out and needed to be realized soon.

Thank you!