SEMICONDUCTOR

TECHNICAL DATA
SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES
High DC Current Gain : hFE=1000(Min.) at VCE=3V, IC=3A. High Collector Breakdown Voltage : VCEO=100V(Min.)
Q E
D

TIP122
EPITAXIAL PLANAR NPN TRANSISTOR

A R S

MAXIMUM RATING (Ta=25

CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range DC Pules

)
SYMBOL VCBO VCEO VEB0 IC ICP IB PC Tj Tstg RATING 100 100 5 5 8 0.12 65 150 -55 150 UNIT V V V A A W
K

L C

1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER

TO-220AB

EQUIVALENT CIRCUIT
C B

DIM A B C D E F G H J K L M N O P Q R S T

MILLIMETERS 10.30 MAX 15.30 MAX 0.80 _ 3.60 + 0.20 3.00 6.70 MAX _ 13.60 + 0.50 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 _ 9.50 + 0.20 _ 8.00 + 0.20 2.90 MAX

R1 = 8k

R2 = 120k E

ELECTRICAL CHARACTERISTICS (Ta=25

CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain ICBO IEBO V(BR)CEO hFE(1) hFE(2)

)
TEST CONDITION VCB=100V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 VCE=3V, IC=0.5A VCE=3V, IC=3A IC=3A, IB=12mA IC=5A, IB=20mA VCE=3V, IC=3A VCB=10V, IE=0, f=1MHz MIN. 100 1000 1000 TYP. MAX. 0.2 2 10000 2 4 2.5 300 V V pF UNIT mA mA V

SYMBOL

Collector-Emitter Saturation Voltage Base-Emitter Voltage Output Capacitance

VCE(sat)(1) VCE(sat)(2) VBE Cob

1999. 11. 16

Revision No : 1

1/2

TIP122

h FE - I C
10k DC CURRENT GAIN hFE 5K 3k
VCE =3V

VCE(sat) , VBE(sat) - I C
3.5
I C /I B =250

SATURATION VOLTAGE VCE(sat) ,VBE(sat) (V)

3.0 2.5 2.0 1.5 1.0 0.5

V BE(sat) VCE(sat)

1k 500 300

100 0.1

0.3

0.5

10

0.1

0.3

10

20

COLLECTOR CURRENT I C (A)

COLLECTOR CURRENT I C (A)

P C - Ta
100 COLLECTOR CURRENT I C (A) POWER DISSIPATION PC (W) 80 60 40 20 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta ( C) 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 1

SAFE OPERATING AREA

5m s DC

s 1000s 50 ms 1

10

30

50

100

200

COLLECTOR-EMITTER VOLTAGE VCE (V)

OUTPUT AND INPUT CAPACITANCE vs. REVERSE VOLTAGE

1k CAPACITANCE C ob(pF) ,C ib(pF) 500 300
f=1MHz

100 50 30
Cib Cob

10 0.1 0.3 1 3 10 30 100 COLLECTOR-BASE VOLTAGE V CB (V) EMITTER-BASE VOLTAGE VEB (V)

1999. 11. 16

Revision No : 1

2/2

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