INTEGRATED CIRCUITS

DATA SHEET

TDA4866 Full bridge current driven vertical deflection booster

Product specication Supersedes data of 1999 Jun 14 File under Integrated Circuits, IC02 2001 Aug 07

Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

FEATURES Fully integrated, few external components No additional components in combination with the deflection controller TDA485x, TDA4841PS Pre-amplifier with differential high CMRR current mode inputs Low offsets High linear sawtooth signal amplification High efficient DC-coupled vertical output bridge circuit Powerless vertical shift High deflection frequency up to 160 Hz Power supply and flyback supply voltage independent adjustable to optimize power consumption and flyback time Excellent transition behaviour during flyback Guard circuit for screen protection. QUICK REFERENCE DATA SYMBOL DC supply; note 1 VP VFB Iq Ide Iid IFB supply voltage (pin 3) yback supply voltage (pin 7) quiescent current (pin 7) note 2 8.2 0.6 note 3 7 500 PARAMETER CONDITIONS MIN. TYP. GENERAL DESCRIPTION

TDA4866

The TDA4866 is a power amplifier for use in 90 degree colour vertical deflection systems for frame frequencies of 50 to 160 Hz. The circuit provides a high CMRR current driven differential input. Due to the bridge configuration of the two output stages DC-coupling of the deflection coil is achieved. In conjunction with TDA485x, TDA4841PS the ICs offer an extremely advanced system solution.

MAX.

UNIT

25 60 10

V V mA

Vertical circuit deection current (peak-to-peak value; pins 4 and 6) differential input current (peak-to-peak value) 2 600 2 A A A

Flyback generator maximum current during yback (peak-to-peak value; pin 7)

Guard circuit; note 1 V8 I8 Notes 1. Voltages refer to pin 5 (GND). 2. Up to 60 V VFB 40 V a decoupling capacitor CFB = 22 F (between pin 7 and pin 5) and a resistor RFB = 100 (between pin 7 and VFB) are required (see Fig.7). 3. Differential input current Iid = I1 I2. guard voltage guard current guard on guard on 7.5 5 8.5 10 V mA

2001 Aug 07

Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

ORDERING INFORMATION TYPE NUMBER TDA4866 TDA4866J PACKAGE NAME SIL9P DBS9P DESCRIPTION plastic single in-line power package; 9 leads plastic DIL-bent-SIL power package; 9 leads (lead length 12/11 mm); exposed die pad

TDA4866

VERSION SOT131-2 SOT523-1

BLOCK DIAGRAM
handbook, full pagewidth

GUARD output

VP

GND

VFB

7 FLYBACK GENERATOR

TDA4866
GUARD CIRCUIT

6 AMPLIFIER A INA 1 INPUT STAGE INB from e.g. TDA485x, TDA4841PS 2 AMPLIFIER B 4 9

OUTA CSP RSP Rp

Idefl vertical deflection coil

PROTECTION

FEEDB Rref OUTB Rm

MED750

Fig.1 Block diagram.

PINNING SYMBOL INA INB VP OUTB GND OUTA VFB GUARD FEEDB PIN 1 2 3 4 5 6 7 8 9 DESCRIPTION input A input B supply voltage output B ground output A yback supply voltage guard output feedback input

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Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

TDA4866

handbook, halfpage

INA INB VP OUTB GND OUTA VFB GUARD FEEDB

1 2 3 4 5 6 7 8 9
MHB936

INA INB VP OUTB

1 2 3 4 5 6 7 8 9
MHB937

TDA4866

GND OUTA VFB GUARD FEEDB

TDA4866J

Fig.2 Pin configuration (SIL version).

Fig.3 Pin configuration (DBS version).

FUNCTIONAL DESCRIPTION The TDA4866 consists of a differential input stage, two output stages, a flyback generator, a protection circuit for the output stages and a guard circuit. Differential input stage The differential input stage has a high CMRR differential current mode input (pins 1 and 2) that results in a high electro-magnetic immunity and is especially suitable for driver units with differential (e.g. TDA485x, TDA4841PS) and single ended current signals. Driver units with voltage outputs are simply applicable as well (e.g. two additional resistors are required). The differential input stage delivers the driver signals for the output stages. Output stages The two output stages are current driven in opposite phase and operate in combination with the deflection coil in a full bridge configuration. Therefore the TDA4866 requires no external coupling capacitor (e.g. 2200 F) and operates with one supply voltage VP and a separate adjustable flyback supply voltage VFB only. The deflection current through the coil (Idefl) is measured with the resistor Rm which produces a voltage drop (Urm) of: Urm Rm Idefl. At the feedback input (pin 9) a part of Idefl is fed back to the input stage. The feedback input has a current input characteristic which holds the differential voltage between pin 9 and the output pin 4 on zero.

Therefore the feedback current (I9) through Rref is: Rm I 9 --------- I defl R ref The input stage directly compares the driver currents into pins 1 and 2 with the feedback current I9. Any difference of this comparison leads to a more or less driver current for the output stages. The relation between the deflection current and the differential input current (Iid) is: Rm I id = I 9 --------- I defl R ref Due to the feedback loop gain (VU loop) and internal bondwire resistance (Rbo) correction factors are required to determine the accurate value of Idefl: R ref 1 I defl = I id ----------------------- 1 ---------------- R m + R bo V U loop 1 with Rbo 70 m and 1 ---------------- 0.98 V U loop for Idefl = 0.7 A. The deflection current can be adjusted up to 1 A by varying Rref when Rm is fixed to 1 . High bandwidth and excellent transition behaviour is achieved due to the transimpedance principle this circuit works with.

2001 Aug 07

Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

Flyback generator During flyback the flyback generator supplies the output stage A with the flyback voltage. This makes it possible to optimize power consumption (supply voltage VP) and flyback time (flyback voltage VFB). Due to the absence of a decoupling capacitor the flyback voltage is fully available. In parallel with the deflection yoke and the damping resistor (Rp) an additional RC combination (RSP; CSP) is necessary to achieve an optimized flyback behaviour. Protection The output stages are protected against: Thermal overshoot Short-circuit of the coil (pins 4 and 6). Guard circuit

TDA4866

The internal guard circuit provides a blanking signal for the CRT. The guard signal is active HIGH: At thermal overshoot When feedback loop is out of range During flyback. The internal guard circuit will not be activated, if the input signals on pins 1 and 2 delivered from the driver circuit are out of range or at short-circuit of the coil (pins 4 and 6). For this reason an external guard circuit can be applied to detect failures of the deflection (see Fig.8). This circuit will be activated when flyback pulses are missing, which is the indication of any abnormal operation.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages referenced to pin 5 (GND); unless otherwise specied. SYMBOL VP VFB IFB V1, V2 I1, I2 V4, V6 I4, I6 V9 I9 V8 I8 Tstg Tamb Tj Ves Notes 1. Maximum output currents I4 and I6 are limited by current protection. 2. For VP > 13 V the guard voltage V8 is limited to 13 V. 3. Internally limited by thermal protection; switching point 150 C. 4. Equivalent to discharging a 200 pF capacitor through a 0 series resistor. PARAMETER supply voltage (pin 3) yback supply voltage (pin 7) yback supply current input voltage input current output voltage output current feedback voltage feedback current guard voltage guard current storage temperature ambient temperature junction temperature electrostatic handling voltage note 3 note 4 note 2 note 1 CONDITIONS 0 0 0 0 0 0 0 0 0 0 0 20 20 20 500 MIN. MAX. 30 60 1.8 VP 5 VP 1.8 VP 5 VP + 0.4 5 +150 +75 +150 +500 V V A V mA V A V mA V mA C C C V UNIT

2001 Aug 07

Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

THERMAL CHARACTERISTICS SYMBOL Rth(j-mb) PARAMETER thermal resistance from junction to mounting base TDA4866 (SIL version) TDA4866J (DBS version) Note note 1 CONDITIONS

TDA4866

VALUE 4 4

UNIT K/W K/W

1. To minimize the thermal resistance from mounting base to heatsink [Rth(mb-h)] (DBS version) follow the recommended mounting instruction: screw mounting preferred; torque = 40 Ncm; use heatsink compound. CHARACTERISTICS VP = 15 V; Tamb = 25 C; VFB = 40 V; voltages referenced to pin 5 (GND); parameters are measured in test circuit (see Fig.6); unless otherwise specied. SYMBOL VP VFB IFB Iid(p-p) I1, 2(p-p) CMRR V1 V2 TCi,1 TCi,2 V1 V2 I9 V9 Iid(offset) Ci INA Ci INB I4 I6 V6 V6,3 V4 PARAMETER supply voltage (pin 3) yback supply voltage (pin 7) quiescent feedback current (pin 7) differential input current (Iid = I1 I2) (peak-to-peak value) single ended input current (peak-to-peak value) common mode rejection ratio input clamp voltage input clamp voltage input clamp signal TC on pin 1 input clamp signal TC on pin 2 differential input voltage feedback current feedback voltage differential input offset current (Iid(offset) = I1 I2) input capacity pin 1 referenced to GND input capacity pin 2 referenced to GND Ide = 0; Rref = 1.5 k; Rm = 1 Iid = 0 note 2 note 3 I1 = 300 A I2 = 300 A note 1 no load; no signal CONDITIONS MIN. 8.2 VP + 6 0 2.7 2.7 0 0 0 1 0 I6 = 0.7 A I6 = 1.0 A output A saturation voltage to VP output B saturation voltage to GND I6 = 0.7 A I6 = 1.0 A I4 = 0.7 A I4 = 1.0 A 2001 Aug 07 6 7 500 300 54 3.0 3.0 500 1.3 1.6 2.3 2.7 1.3 1.6 TYP. MAX. 25 60 10 600 600 3.3 3.3 800 800 10 600 VP 1 20 5 5 1 1 1.5 1.8 2.9 3.3 1.5 1.8 V V mA A A dB V V V/K V/K mV A V A pF pF UNIT

Input stage

Output stages A and B output current output current output A saturation voltage to GND A A V V V V V V

Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

SYMBOL V4,3 LE V4 V6 Goi Gofb Gifb Ide(ripple) PARAMETER output B saturation voltage to VP linearity error DC output voltage DC output voltage open-loop current gain (I4, 6/Iid) open-loop current gain (I4, 6/I9) current ratio (Iid/I9) output ripple current as a function of supply ripple CONDITIONS I4 = 0.7 A I4 = 1.0 A Ide = 0.7 A; note 4 Iid = 0 A; closed-loop Iid = 0 A; closed-loop I4, 6 < 100 mA; note 5 I4, 6 < 100 mA; note 5 closed-loop VP(ripple) = 0.5 V; Iid = 0; closed-loop 6.6 6.6 MIN. TYP. 1.0 1.3 7.2 7.2 100 100 0.2 1

TDA4866

MAX. 1.6 1.9 2 7.8 7.8 V V

UNIT

% V V dB dB dB mA

Flyback generator V7, 6 voltage drop during yback reverse forward V6 V6 I7 V8 V8 I8 V8 I8 V8(ext.) Notes 1. Up to 60 V VFB 40 V a decoupling capacitor CFB = 22 F (between pins 7 and 5) and a resistor RFB = 100 (between pin 7 and VFB) are required (see Fig.7). 2. Saturation voltages of output stages A and B can be increased in the event of negative input currents I1, 2 < 500 A. I deflc I id 3. D i = ---------- -------- with Ideflc = common mode deflection current and Iidc = common mode input current. I idc I defl 4. Deviation of the output slope at a constant input slope. 5. Frequency behaviour of Goi and Gofb: a) 3 dB open-loop bandwidth (45) at 15 kHz; second pole (135) at 1.3 MHz. b) Open-loop gain at second pole (135) 55 dB. switching on threshold voltage switching off threshold voltage yback current during yback Ide = 0.7 A Ide = 1.0 A Ide = 0.7 A Ide = 1.0 A VP 1 guard on guard on; VP = 8.2 V guard on guard off guard off; V8 = 5 V VP 13 V 7.5 6.9 5 0.5 0 0 2.0 2.3 +5.6 +5.9 8.5 1 3.0 3.5 +6.1 +6.5 VP + 1 1 10 0.4 1.5 13 V V V V V A

VP + 1.5 V

VP 1.5

Guard circuit output voltage output voltage output current output voltage output current allowable external voltage on pin 8 V mA V mA V VP 0.4 V

VP + 0.3 V

2001 Aug 07

Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

TDA4866

handbook, full pagewidth

I1

driver current from TDA485x, TDA4841PS on pin 1

I2

driver current from TDA485x, TDA4841PS on pin 2

t V6 VFB VP

output voltage on pin 6

V4 VP

output voltage on pin 4

Idefl

deflection current through the coil

V8

GUARD output voltage on pin 8 during normal operation

tflb flyback time t flb depends on V FB

t
MHA062

Fig.4 Timing diagram.

2001 Aug 07

Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

INTERNAL PIN CONFIGURATION

TDA4866

dbook, full pagewidth

VP

TDA4866

VP

5 2 1

VP 4

VP
MED755

Fig.5 Internal circuits.

2001 Aug 07

Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

TEST AND APPLICATION INFORMATION

TDA4866

handbook, full pagewidth

I1 (A) 550 50 t I 1 from driver circuit TDA485x, TDA4841PS I1 I2 (A) 550 50 t VFB VP 1 2 3 4

TDA4866
5 6 7 8 9

Rm 1

GUARD output

6 Rref 2 k
MED752

Fig.6 Test diagram.

handbook, full pagewidth

TDA4866
1 2 3 4 5 6 7 8 9

I1 from driver circuit TDA485x, TDA4841PS I2 Vshift

25 k 10 k

Rm 1

Ldeflcoil = 5.2 mH Rdeflcoil = 4.2 CSP

(2)

GUARD output

RSP Rp
(2)

VP 220 F RFB VFB

(1) (1)

180 R ref 1.6 k

MED753

CFB 100 F (VFB < 40 V)

(1) Up to 60 V VFB 40 V, RFB = 100 and CFB = 22 F are required. (2) CSP = 10 to 330 nF and RSP = 10 to 22 are required. The value of CSP depends on minimum tflb/VFB.

Fig.7 Application diagram with driver circuit TDA485x, TDA4841PS.

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Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

TDA4866

handbook, full pagewidth

VFB

VP 1N4448 2.2 k BC556 GUARD output HIGH = error 3.3 k BC548 22 F 220 k
MED754

TDA4866

2.2

vertical output signal

Fig.8 Application circuit for external guard signal generation.

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Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

Example for both TDA4866 and TDA4866J Table 1 Values given from application VALUE 0.71 5.2 5.4 [= 4.2 + 7% + R()] 1 (+1%) 180 1.6 35 +50 +75 4 8 A mH k V C C K/W K/W UNIT

TDA4866

I defl(max) P tot = V P ------------------- + V P 0.03 A + 0.1 W + V FB I FB 2 1 2 P defl = -- ( R deflcoil + R m ) I defl(max) 3 P IC = P tot P defl PIC = power dissipation of the IC Pdefl = power dissipation of the deflection coil Ptot = total power dissipation. Calculation formula for flyback time: tflb = ( R deflcoil + R m ) I defl(max) 1 + ---------------------------------------------------------------- V FB + V 7r V 6r L deflcoil -------------------------------- ln -------------------------------------------------------------------------- + t flb(off) R deflcoil + R m ( R deflcoil + R m ) I defl(max) 1 ---------------------------------------------------------------- V FB ( V 7f V 6f ) with: tflb(off) = flyback switch off time = 50 s for this application (tflb(off) depends on VFB, Idefl(max), Ldeflcoil and CSP). To achieve good noise suppression the following values for Rp are recommended: Table 3 Recommended values Ldecoil (mH) 3 6 10 15 Rp () 100 180 240 390

SYMBOL Ide(max) Ldecoil Rdecoil Rm Rp Rref VFB Tamb Tdecoil Rth(j-mb) Rth(mb-amb)(1) Note

1. A layer of silicon grease between the mounting base and the heatsink optimizes thermal resistance. Table 2 Calculated values VALUE 8.6 270 3.65 0.9 2.75 12 +83 V s W W W K/W C UNIT

SYMBOL VP tb Ptot Pde PIC Rth(tot) Tj(max)(1) Note

1. Tj(max) = PIC [Rth(j-mb) + Rth(mb-amb)] + Tamb Calculation formula for supply voltage and power consumption Vb1 = V6, 3 + Rdeflcoil Idefl(max) UL + Rm Idefl(max) + V4 Vb2 = V6 + Rdeflcoil Idefl(max) + UL + Rm Idefl(max) + V4, 3 for Vb1 > Vb2 : VP = Vb1 for Vb2 > Vb1 : VP = Vb2 with: UL = Ldeflcoil 2Idefl(max) fv fv = vertical deflection frequency.

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Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

PACKAGE OUTLINES SIL9P: plastic single in-line power package; 9 leads

TDA4866

SOT131-2

non-concave x Dh

D Eh

view B: mounting base side d A2

B seating plane j E

A1 b

c 1 Z e bp w M 0 5 scale DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT131-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION A1 max. 2.0 A2 4.6 4.4 b max. 1.1 bp 0.75 0.60 c 0.48 0.38 D (1) 24.0 23.6 d 20.0 19.6 Dh 10 E (1) 12.2 11.8 e 2.54 Eh 6 j 3.4 3.1 L 17.2 16.5 Q 2.1 1.8 w 0.25 x 0.03 Z (1) 2.00 1.45 10 mm 9 Q

ISSUE DATE 95-03-11 99-12-17

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Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

TDA4866

DBS9P: plastic DIL-bent-SIL power package; 9 leads (lead length 12/11 mm); exposed die pad

SOT523-1

non-concave x Eh

q1

Dh D D1 P k view B: mounting base side A2 q2

L2 L

L3

L1

1 Z e DIMENSIONS (mm are the original dimensions) UNIT A2(2) bp mm c D(1) D1(2) Dh E(1) Eh e e1

9 w M 0 5 scale e1 e2 k L L1 L2 L3 4.5 3.7 m 2.8 P Q q q1 q2 v 0.8 w x Z(1) 1.65 1.10 10 mm Q m e2 c v M

bp

2.7 0.80 0.58 13.2 2.3 0.65 0.48 12.8

6.2 14.7 3.0 12.4 11.4 6.7 3.5 3.5 2.54 1.27 5.08 5.8 14.3 2.0 11.0 10.0 5.5

3.4 1.15 17.5 4.85 3.8 3.1 0.85 16.3 3.6

0.3 0.02

Notes 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. 2. Plastic surface within circle area D1 may protrude 0.04 mm maximum. OUTLINE VERSION SOT523-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-11-12 00-07-03

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Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

SOLDERING Introduction to soldering through-hole mount packages This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. Soldering by dipping or by solder wave The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joints for more than 5 seconds.

TDA4866

The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds.

Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. suitable suitable(1) WAVE

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Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

DATA SHEET STATUS DATA SHEET STATUS(1) Objective specication PRODUCT STATUS(2) Development DEFINITIONS

TDA4866

This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specication in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specication without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notication (CPCN) procedure SNW-SQ-650A.

Preliminary specication

Qualication

Product specication

Production

Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

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Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

NOTES

TDA4866

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Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

NOTES

TDA4866

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Philips Semiconductors

Product specication

Full bridge current driven vertical deection booster

NOTES

TDA4866

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Philips Semiconductors a worldwide company

Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales ofces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Koninklijke Philips Electronics N.V. 2001

SCA73

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

753504/05/pp20

Date of release: 2001

Aug 07

Document order number:

9397 750 08444

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