2N3906

New Product

Vishay Semiconductors
formerly General Semiconductor

Small Signal Transistor (PNP)

TO-226AA (TO-92)
0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6)

Features
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor 2N3904 is recommended. On special request, this transistor is also manufactured in the pin configuration TO-18. This transistor is also available in the SOT-23 case with the type designation MMBT3906.

max. 0.022 (0.55) 0.098 (2.5)

Dimensions in inches and (millimeters)

Mechanical Data
Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk 5K per container, 20K/box E7/4K per Ammo mag., 20K/box

Bottom View

Maximum Ratings & Thermal Characteristics

Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Dissipation TA = 25C TC = 25C Symbol VCEO VCBO VEBO IC Ptot RJA Tj TS

Ratings at 25C ambient temperature unless otherwise specified.

Value 40 40 5.0 200 625 1.5 250(1) 150 65 to +150

Unit V V V mA mW W C/W C C

Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range
Note: (1) Valid provided that leads are kept at ambient temperature.

Document Number 88114 07-May-02

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2N3906
Vishay Semiconductors
formerly General Semiconductor

Electrical Characteristics (T
Parameter

= 25C unless otherwise noted)

Symbol

Test Condition -VCE = 1 V, -IC = 0.1 mA -VCE = 1 V, -IC = 1 mA -VCE = 1 V, -IC = 10 mA -VCE = 1 V, -IC = 50 mA -VCE = 1 V, -IC = 100 mA -VEB = 3 V, -VCE = 30 V -VEB = 3 V, -VCE = 30 V -IC = 10 mA, -IB = 1 mA -IC = 50 mA, -IB = 5 mA -IC = 10 mA, -IB = 1 mA -IC = 50 mA, -IB = 5 mA -IC = 1 mA, IB = 0 -IC = 10 A, IE = 0 -IE = 10 A, IC = 0 -VCE = 10 V, -IC = 1 mA, f = 1 kHz -VCE = 10 V, -IC = 1 mA, f = 1 kHz -VCE = 20 V, -IC = 10 mA f = 100 MHz -VCB = 5 V, f = 100 kHz -VEB = 0.5 V, f = 100 kHz -VCE = 10 V, -IC = 1 mA f = 1 kHz -VCE = 1 V, -IC = 1 mA f = 1 kHz

Min 60 80 100 60 30 40 40 5 1 0.5 10-4 250 100 1

Typ

Max 300 50 50 0.25 0.4 0.85 0.95 10 8 10-4 4.5 10 400 40

Unit

DC Current Gain

hFE

Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Input Impedance Voltage Feedback Ratio Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Small Signal Current Gain Output Admittance

-ICEV -IEBV -VCEsat -VBEsat -V(BR)CEO -V(BR)CBO -V(BR)EBO hie hre fT CCBO CEBO hfe hoe

nA nA V V V V V k MHz pF pF S

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Document Number 88114 07-May-02

2N3906
Vishay Semiconductors
formerly General Semiconductor

Electrical Characteristics (T
Parameter Noise Figure Delay Time (see fig. 1) Rise Time (see fig. 1) Storage Time (see fig. 2) Fall Time (see fig. 2)

= 25C unless otherwise noted)

Symbol F td tr ts tf

Test Condition -VCE = 5 V, -IC = 100 A, RG = 1 k, f = 10...15000 Hz -IB1 = 1 mA, -IC = 10 mA -IB1 = 1 mA, -IC = 10 mA, IB1 = -IB2 = 1 mA, -IC = 10 mA IB1 = -IB2 = 1 mA, -IC = 10 mA

Min

Typ

Max 4 35 35 225 75

Unit dB ns ns ns ns

Fig. 1: Test circuit for delay and rise time * total shunt capacitance of test jig and connectors

Fig. 2: Test circuit for storage and fall time * total shunt capacitance of test jig and connectors

Document Number 88114 07-May-02

www.vishay.com 3

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