(NPN) TIP41, TIP41A, TIP41B, TIP41C (PNP) TIP42, TIP42A, TIP42B, TIP42C Complementary Silicon Plastic Power Transistors

. . . designed for use in general purpose amplifier and switching applications.

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ESD Ratings: Machine Model, C; > 400 V

Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V0 @ 1/8 PbFree Package is Available*

6A COMPLEMENTARY SILICON POWER TRANSISTORS 40 60 80 100 V, 65 W

MARKING DIAGRAM

MAXIMUM RATINGS
Rating CollectorEmitter Voltage TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C Symbol VCEO Value 40 60 80 100 40 60 80 100 5.0 6.0 10 2.0 65 0.52 2.0 0.016 62.5 65 to +150 Unit Vdc

AYWW TIP4xx Vdc 1 Vdc Adc Adc Watts W/C Watts W/C mJ TO220AB CASE 221A09 STYLE 1 xx A Y WW = Specific Device Code: 1, 2, 1A, 1B, 1C, 2A, 2B, 2C = Assembly Location = Year = Work Week 2
STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR

CollectorBase Voltage

VCB

EmitterBase Voltage Collector Current Base Current Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation @ TA = 25C Derate above 25C Unclamped Inductive Load Energy (Note 1) Operating and Storage Junction, Temperature Range Continuous Peak

VEB IC IB PD PD E TJ, Tstg

ORDERING INFORMATION
C Device TIP41 TIP41A TIP41B TIP41C TIP41CG Symbol RJC RJA Max 1.67 57 Unit C/W C/W TIP42 TIP42A TIP42B TIP42C TIP42CG Package TO220AB TO220AB TO220AB TO220AB TO220AB (PbFree) TO220AB TO220AB TO220AB TO220AB TO220AB (PbFree) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 . *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2004

October, 2004 Rev. 5

Publication Order Number: TIP41A/D

(NPN) TIP41, TIP41A, TIP41B, TIP41C (PNP) TIP42, TIP42A, TIP42B, TIP42C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C TIP41, TIP41A, TIP42, TIP42A TIP41B, TIP41C, TIP42B, TIP42C ICES TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C IEBO hFE VCE(sat) VBE(on) fT hfe 400 400 400 400 1.0 mAdc VCEO(sus) 40 60 80 100 0.7 0.7 mAdc Vdc Symbol Min Max Unit

Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) (VCE = 60 Vdc, VEB = 0) (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)

ICEO

mAdc

30 15

75 1.5 2.0

Vdc Vdc

CollectorEmitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) BaseEmitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) SmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

3.0 20

MHz

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(NPN) TIP41, TIP41A, TIP41B, TIP41C (PNP) TIP42, TIP42A, TIP42B, TIP42C
TA 4.0 PD, POWER DISSIPATION (WATTS) TC 80

3.0

60 TC

2.0

40

1.0

20

TA

20

40

60 100 80 T, TEMPERATURE (C)

120

140

160

Figure 1. Power Derating

VCC +30 V 25 s +11 V 0 9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% RB D1 4 V RC SCOPE t, TIME ( s)

2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.06 tr TJ = 25C VCC = 30 V IC/IB = 10

td @ VBE(off) 5.0 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA

0.1

1.0 0.2 2.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP)

4.0

6.0

Figure 2. Switching Time Test Circuit

Figure 3. TurnOn Time

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(NPN) TIP41, TIP41A, TIP41B, TIP41C (PNP) TIP42, TIP42A, TIP42B, TIP42C
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 1.0 0.2 0.5 1.0

D = 0.5

0.2 0.1 0.05 0.02 ZJC(t) = r(t) RJC RJC = 1.92C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) ZJC(t) 2.0 5.0 t, TIME (ms) 10 20 50 P(pk)

t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k

Figure 4. Thermal Response

10 0.5 ms IC, COLLECTOR CURRENT (AMP) 5.0 1.0 ms 3.0 TJ = 150C 2.0 CURVES APPLY BELOW RATED VCEO 1.0 0.5 0.3 0.2 0.1 5.0 SECONDARY BREAKDOWN LTD BONDING WIRE LTD THERMAL LIMITATION @ TC = 25C (SINGLE PULSE) TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C 40 10 20 60 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 80 100 5.0 ms

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

Figure 5. ActiveRegion Safe Operating Area

5.0 3.0 2.0 1.0 t, TIME ( s) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.06 tf ts TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2

300 TJ = 25C 200 C, CAPACITANCE (pF)

Cib 100 70 50

Cob

0.1

0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP)

4.0

6.0

30 0.5

1.0

2.0 3.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)

30

50

Figure 6. TurnOff Time

Figure 7. Capacitance

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(NPN) TIP41, TIP41A, TIP41B, TIP41C (PNP) TIP42, TIP42A, TIP42B, TIP42C
VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 500 300 200 100 70 50 30 20 10 7.0 5.0 0.06 VCE = 2.0 V TJ = 150C 25C 2.0 TJ = 25C 1.6

hFE, DC CURRENT GAIN

1.2

IC = 1.0 A

2.5 A

5.0 A

0.8

55 C

0.4

0.1

0.2 0.3 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP)

4.0

6.0

10

20

30

50 100 200 300 IB, BASE CURRENT (mA)

500

1000

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

2.0 V, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C 1.6 V, VOLTAGE (VOLTS)

+2.5 +2.0 +1.5 +1.0 +0.5 0 0.5 1.0 1.5 2.0 2.5 0.06 0.1 0.2 0.3 0.5 VB FOR VBE 55 C to +25C 1.0 2.0 3.0 4.0 6.0 * VC FOR VCE(sat) +25 C to +150C 55 C to +25C +25 C to +150C *APPLIES FOR IC/IB hFE/4

1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 3.0 4.0 6.0

0.8

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

Figure 10. On Voltages

R BE , EXTERNAL BASEEMITTER RESISTANCE (OHMS)

Figure 11. Temperature Coefficients

103 IC, COLLECTOR CURRENT ( A) 102 101 100 101 102 REVERSE IC = ICES FORWARD VCE = 30 V TJ = 150C 100C 25C

10 M VCE = 30 V 1.0 M IC ICES IC = 10 x ICES

100 k

10 k

IC = 2 x ICES (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160

1.0 k

103 0.3 0.2

0.1

+0.1 +0.2 +0.3

+0.4 +0.5 +0.6

+0.7

0.1 k

VBE, BASEEMITTER VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (C)

Figure 12. Collector CutOff Region

Figure 13. Effects of BaseEmitter Resistance

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(NPN) TIP41, TIP41A, TIP41B, TIP41C (PNP) TIP42, TIP42A, TIP42B, TIP42C
PACKAGE DIMENSIONS

TO220AB CASE 221A09 ISSUE AA

T B
4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 2.04

F T S

Q
1 2 3

A U K

H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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TIP41A/D

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.