ABSTRACT The phenomenological predictions for the cutoff frequency of carbon nanotube tra nsistors and the predictions

of the effects of parasitic capacitances on AC nano tube transistor performance are presented. The influence of quantum capacitance, kinetic inductance, and ballistic transport on the high-frequency properties of nanotube transistors is analyzed. The challenges of impedance matching for ac n ano-electronics in general, and how integrated nanosystems can solve this challe nge, are presented.