Proceedings of the 4th International Conference on

Nanostructures (ICNS4)

12-14 March 2012, Kish Island, I.R. Iran

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SYN 127

Synthesis of Amine-Functionalized Mesoporous Silica for Removal of Hydrogen Sulfide from Crude Oil
M. Abdoussa*, A. A. Miran Beigib, A. Vahidb, N. Hazrati, b a Department of Chemistry, Amirkabir University of Technology, Tehran, Iran b Oil Refining Research Division, Research Institute of Petroleum Industry, Tehran, Iran *majidabdouss@yahoo.com

Dependence of Capacitance of Nanostructured Porous Silicon to the Temperature and Frequency

S. Ashrafabadi*, M. E. Azimaraghi, F. Kanjouri Department of Physics, Tarbiat Moallem University, Tehran, 1571914911, Iran *somaye.ashrafi@yahoo.com

Silicate mesoporous materials are of the main interesting adsorbents for decreasing of hydrogen sulfide (H2S) from crude oil. Sulfur compounds specially, H2S, causes foul odors and also deteriorates the finished products. In addition, due to its acidity, it is corrosive to metals, which is harmful for storage and usage of crude oil products. The scope of this study is synthesis of MCM-41 based adsorbent and investigation its ability toward capture of H2S. In this work amine-grafted MCM-41 was synthesized via post-synthesis functionalization. MCM-41 materials were functionalized with 3-aminopropyltrimethoxysilane (1N) and [1-(2-aminoethyl)-3-aminopropyl]trimethoxysilane (2N). Highly ordered MCM-41, deduced from X-ray diffraction (XRD) and N2 adsorption/desorption tests, were used to functionalizing with amino-organosilane. The amine-functionalized MCM-41 samples were characterized by X-ray diffraction and N2 adsorption/desorption techniques. The amount of grafted amine on MCM-41 was determined by argentometric back titration and its ability toward removal of H2S from stripped crude oil was also investigated. Effective parameters for stripping of H2S from crude oil is time, temperature and carrier gas flow rate. The obtained optimum condition was 40C, 60 minutes and flow 0.5 L min-1 of carrier gas. Keywords: Mesoporous silica; Amine-grafted; MCM-41; Crude oil; H2S removal SYN 126

Porous silicon (PS) layers were prepared by electrochemical etching. The porosity and size of pores depends on the anodization condition such as current density, electrolytes concentration and anodization time. In this work we obtain porous layers with pore size between 21 24 nm, which is mesoporous and nanostructured. We have also investigated the dependence of capacitance to the temperature and frequency at 10105 Hz frequency range. This clearly indicates the capacitive nature of porous silicon at high frequencies, which make it possible to use PS as a dielectric in humidity sensors. Keywords: Nanostructured; Capacitance; Porous layer SYN 128

A New Method for Preparation of Mesoporous Silica Containing Nickel-Tungsten Oxides: Synthesis and Characterization
M. Vatania*, S.M. Ghoreishia, b, A. Rashidic, a Department of Chemical Engineering, Isfahan University of Technology, Isfahan, 8415683111, Iran b Nanotechnology & Advanced Materials Institute, Isfahan University of Technology, Isfahan, 8415683111, Iran c Nanotechnology Research Center, Research Institute of Petroleum Industry, Tehran, Iran *m.vatani@ce.iut.ac.ir

The Optimum Conditions for Adsorbtion of Lead Ions on Nanocomposite Silica Aerogel Activated Carbon by Using the Taguchi Method
F. Tadayona*, Sh. Motahara, M. Hosseinib a Department of Chemistry, North Tehran Branch, Islamic Azad University, Tehran, Iran b Department of Chemistry, Omidieh Branch, Islamic Azad University, Omidieh, Iran * F_Tadayon@iau-tnb.ac.ir

Using the Taguchi method, this study analyzes the optimum conditions for removal of lead from aqueous solution in batch method by nanocomposite silica aerogel activated carbon (SA-AC), which is prepared using the sol gel method. The controllable factors used in this study consisted of the following: (1) pH of the solution (pH); (2) adsorption temperature (T); (3) lead initial concentration (C0); (4) adsorbent dosage (m); (5) contact time (t). The effects of each factor were studied at four levels on the removal efficiency of lead from aqueous solution. L16 orthogonal array (OA) has been used for experimental design. Concentrations of lead were assessed by flame atomic absorption spectrophotometer. The statistical analysis reveals that the most important factors contributing to the removal efficiency are pH of the solution and adsorption temperature. The study shows that the Taguchis method is suitable to optimize the experiments for total lead ions removal. The total optimum adsorptive removal of lead ions were obtained with C0 = 10 mgL-1, T = 65C, pH = 6, m = 0.16 g and t = 6 h. Keywords: Taguchi; Lead; Adsorption; Nanocomposite; Silica aerogel

In recent years, nanotechnology as a multidisciplinary science has led to immense evolution in many fields of science and industries. Production of new material with novel specification and structure is the most important outcome of nanotechnology. These materials will increase efficiency of industrial processes. Catalysis science and technology is a major field in applied science that takes advantage of nanotechnology very well. In this study, synthesis of a nanocatalyst based on MCM-41 support was described. Preparation of catalyst was carried out via a simple and direct method includes incorporation of active phase during synthesis media. Pure MCM-41 and NiW/MCM-41 catalyst was characterized by nitrogen adsorption-desorption isotherms and X-ray diffraction (XRD). Comparison of (Brunauer-Emmett-Telle) BET surface area of support and catalyst showed only a slight decrease in surface area due to support pore blocking. The surface area reduction is reported to be higher for the synthesized catalyst via incipient wet impregnation. Also XRD pattern of catalyst showed high dispersion of active phase and uniform distribution. Keywords: NiW/MCM-41 catalyst; Nanocatalyst; Synthesis; Surface area; Dispersion SYN 129

Fabrication of Mesoporous Silicon Nanowires

W. K. Toa, C. H. Tsanga, H. H. Lia, Z. F. Huanga, b* a Department of Physics, Hong Kong Baptist University, Kowloon, Hong Kong SAR, PR China b Institute of Advanced Materials, Hong Kong Baptist University, Kowloon, Hong Kong SAR, PR China *zfhuang@hkbu.edu.hk

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Abstract Book |INST| Sharif University of Technology|

Proceedings of the 4th International Conference on

Nanostructures (ICNS4)

12-14 March 2012, Kish Island, I.R. Iran

This work reports that n-type mesoporous silicon nanowires (mpSiNWs) are created by metal-assisted chemical etching (MACE, in HF and AgNO3), and the developed formula is generally adapted to generate SiNWs by etching n-Si (100) with electrical resistivity over a range of 10-3-101 cm. Keywords: Silicon nanowires (SiNWs); Mesoporous; Metal-assisted chemical etching (MACE). SYN 130

oxidation method at different temperatures and atmosphere (oxygen and air). Nanowires were characterized using scanning electron microscope (SEM) and X-ray diffraction (XRD) analysis. The results showed that diameter and length of nanowires can be controlled by changing different factors such as temperature, environment atmosphere and annealing time. Keywords: CuO; Nanowires; Direct oxidation SYN 133

GaN Nanowires on PSi and PGaN

L. Shekari*, H. Abu Hassan, Z. Hassan Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia *lsg09_phy089@student.usm.my

Growth of GaN Nanowired Flowers Based on Si (111) Using Thermal Evaporation Technique
K. M .A. Saron, M. R. Hashim* School of Physics, Universiti Sains Malaysia, 11800-Penang, Malaysia *roslan@usm.my

In this research an inexpensive method is introduced to synthesize hexagonal GaN nanowires (NWs); on porous gallium nitride (PGaN) and porous silicon (PSi) substrates, by thermal evaporation method using commercial GaN powder, using argon (Ar) gas flow. Some morphological studies, such as scanning electron microscopy (SEM) and transmission electron microscope (TEM) indicate the role of the substrates in the alignment and nucleation of these NWs. Further optical and structural characterizations were performed using energy-dispersive X-ray spectroscopy (EDX), high resolution X-ray diffraction (HR-XRD) and photoluminescence (PL) spectroscopy. Results reveal that the grown NWs are of single-crystal hexagonal GaN nanostructure. The density and quality of the NWs are highly dependent on the size of the porosity of the substrates and on the mismatch between the substrates and NWs, as well. Results conclude that the NWs grown on PGaN have the better quality as compared to samples on PSi. Keywords: Gallium nitride; Growth; Nanowires; PSi; PGaN. SYN 131

The catalyst-free growth of GaN nanowires (NWs) flowers based on n-Si (111) have been grown via a simple thermal evaporation process by heating GaN powders in a conventional resistance furnace under nitrogen gas at 1150 C with various substrate temperatures. The average length of GaN flowers was obtained to be more than 400 m after one h growth for 1100C, corresponding to a fast growth rate of more than 300 m/h at all substrate temperatures. Scanning electron microscope (SEM) observation indicated that the diameter of GaN nanowires was uniform along the growth direction and in the range of 200800 nm. Scanning electron microscopy, energy dispersion X-ray spectroscopy (EDS), X-ray diffraction, and photoluminescence (PL) indicated that GaN nanowires have hexagonal wurtzite structure. The results indicate that the substrate temperatures had strong effect on the growth rate, surface morphology and optical properties of GaN nanowires. Here, the growth mechanism of the GaN nanowires has been discussed. Keywords: GaN powder; Si (111); Thermal evaporation; Growth; Nanowires SYN 134

Solvotermally Prepared CdS Nanowiers in Presence of Polyvinyl alcohol

P. Dalvand*, M. R. Mohammadi Department of Materials Science and Engineering, Sharif University of Technology, Tehran, Iran *pegahdalvand@alum.sharif.edu

Fabrication and Characterization of In2O3 Nanorods and Nanowires

M. Shariatia, b*, V. Ghafouria, A. Ebrahimzada a Department of Physics, Research Institute of Applied Sciences, Tehran 19835-169, Iran b Mechanical Engineering Department, Pardis Branch-Islamic Azad University, Pardis 16555-135, Iran *shariat@rias.ac.ir

Recently, synthesis of semiconductor nanostructures with special morphology has received considerable attention due to their significant potential application. Cadmium sulfide nanowires were successfully synthesized by solvothermal method in presence of polyvinyl alcohol. X-ray diffraction (XRD) patterns showed that prepared nanostructure was pure CdS with hexagonal structure. Electron microscopic images revealed that prepared CdS nanostructure is composed of long nanowires. UVvisible optical spectra of CdS nanostructure showed blue shift with respect to the bulk value. Keywords: CdS; Solvothermal; Nanowire; Polyvinyl alcohol SYN 132

Effect of Different Factors Affecting on Synthesis of CuO Nanowires

M. Farbod *, N. Meamar Ghaffari, I. Kazeminezhad Department of Physics, Shahid Chamran University, Ahvaz, Iran *farbod_m@scu.ac.ir

Indium oxide wirelike nanostructures have been grown in temperature lower than its evaporation point and deposition occurred in relatively low vacuum. In2O3 nanorods and nanowires were successfully fabricated through the thermal evaporation in argon gas flow. Synthesis process has been performed in catalyst (Au) presence, deposited by radio frequency (RF) sputtering system on Si substrate. Scanning electron microscopy observations revealed that the In2O3 nanostructures are formed by vapour-liquid-solid (VLS) growth mechanism. These one-dimensional nanostrucures have diameters ranging from 75 nm to 150 nm and lengths up to several micrometers. Keywords: Indium oxide; Nanowires and Nanorods; Thermal evaporation; VLS growth mechanism Abstract Book |INST| Sharif University of Technology|

In this study, CuO nanowires were grown on Cu substrate by direct

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