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Irf 540
Irf 540
ID 30 A 16 A
TYPICAL RDS(on) = 0.050 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
3
1 2
TO-220
TO-220FI
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTER s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.)
Value IRF 530FI 100 100 20 30 21 120 150 1 -65 to 175 175
(1) ISD 30 , di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
C C
April 1998
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IRF540/IRF540FI
THERMAL DATA
TO-220 R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max 1 62.5 0.5 300 T O220-F I 3.33
o o o
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 25 V) Max Valu e 30 200 Unit A mJ
V DS = Max Rating Zero G ate Voltage Drain Current (VGS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 20 V
T c = 125 oC
ON ()
Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate Threshold Voltage V DS = VGS Test Cond ition s ID = 250 A ID = 15 A 30 Min. 2 Typ . 3 0.05 Max. 4 0.077 Un it V A
DYNAMIC
Symb ol g fs ( ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D = 15 A VGS = 0 Min. 10 Typ . 20 2600 350 85 3600 500 120 Max. Un it S pF pF pF
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IRF540/IRF540FI
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symb ol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition s V DD = 50 V R G = 4.7 V DD =80 V I D = 15 A VGS = 10 V I D =30 A V GS = 10 V Min. Typ . 20 60 80 13 28 Max. 28 85 110 Un it ns ns nC nC nC
SWITCHING OFF
Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 80 V I D =30 A R G = 4.7 V GS = 10 V Min. Typ . 22 25 55 Max. 30 35 75 Un it ns ns ns
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 % ( ) Pulse width limited by safe operating area
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IRF540/IRF540FI
mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
D1
L2 F1
G1
Dia. F2 F
L5 L7 L6
L9
L4
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H2
P011C
IRF540/IRF540FI
L3 L6 L7 F1 F
G1
F2
1 2 3 L2 L4
P011G
G
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IRF540/IRF540FI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . ..
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