Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch

3N172 / 3N173
FEATURES

CORPORATION

High Input Impedance Diode Protected Gate

PIN CONFIGURATION

ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage 3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA Storage Temperature . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TO-72

C,B

S G D

1503Z

DEVICE SCHEMATIC
1

ORDERING INFORMATION Part 3N172-73 X3N172-73

2

Package Hermetic TO-72 Sorted Chips in Carriers

Temperature Range -55oC to +150oC -55oC to +150oC

0200

ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)

SYMBOL IGSS BVGSS BVDSS BVSDS VGS(th) VGS IDSS ISDS rDS(on) ID(on) PARAMETER Gate Reverse Current Gate Breakdown Voltage Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Threshold Voltage Gate Source Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Source Current Drain Source On Resistance On Drain Current -5.0 -40 -40 -40 -2.0 -2.0 -3.0 -5.0 -5.0 -6.5 -0.4 -0.4 250 -30 -5.0 3N172 MIN MAX -200 -0.5 -125 -30 -30 -30 -2.0 -2.0 -2.5 -5.0 -5.0 -6.5 -10 -10 350 -30 nA ohms mA V 3N173 MIN MAX -500 -1.0 -125 UNITS pA A ID = -10 A ID = -10 A IS = -10A, VDB = 0 VDS = VGS, I D = -10A VDS = -15V, ID = -10 A VDS = -15V, ID = -500A VDS = -15V, VGS = 0 VSD = -15V, VDB = 0, VGD = 0 VGS = -20V, ID = -100A V DS = -15V, VGS = -10V TEST CONDITIONS VGS = -20V TA = +125oC

3N172 / 3N173
CORPORATION

SMALL-SIGNAL ELECTRICAL CHARACTERISTICS TA = 25oC and Bulk (substrate) Lead Connected to Source
SYMBOL | yfs | | yos | Ciss Crss Coss PARAMETER Magnitude of Small-Signal, Common-Source, Short-Circuit, Forward Transadmittance* Magnitude of Small-Signal, Common-Source, Short-Circuit, Output Admittance* Small-Signal, Common-Source, Short-Circuit, Input Capacitance* Small-Signal, Common-Source, Short-Circuit, Reverse Transfer Capacitance* Small-Signal, Common-Source, Short-Circuit, Output Capacitance* 3N172 3N173 MIN MAX MIN MAX 1500 4000 1000 4000 250 3.5 1.0 3.0 250 3.5 1.0 3.0 UNITS S S pF pF pF TEST CONDITIONS VDS = -15V, ID = -10mA, f = 1kHz VDS = -15V, ID = -10mA, f = 1kHz VDS = -15V, ID = -10mA, f = 1MHz VDS = -15V, ID = -10mA, f = 1MHz VDS = -15V, ID = -10mA, f = 1MHz

NOISE CHARACTERISTICS
SYMBOL NF PARAMETER Common-Source Spot Noise Figure
o

TYPICAL 1.0

UNITS dB

TEST CONDITIONS VDS = -15V, ID = -1mA, f = 1kHz, RG = 1M

SWITCHING CHARACTERISTICS TA = 25 C Bulk (substrate) Lead Connected to Source

SYMBOL td (on) tr toff PARAMETER Turn-On Delay Time* Rise Time* Turn-Off Delay Time* 3N172 MIN MAX 12 24 50 3N173 MIN MAX 12 24 50 ns VDD = -15V, ID (on) = -10mA RG = RL = 1.4k See Test Circuit Below UNITS TEST CONDITIONS

*Registered JEDEC Data

SWITCHING TIME DETAIL

VDD

RL

MEASUREMENTS ON SAMPLING OSCILLOSCOPE WITH t rise < 0.2ns Cin < 2.0pF Rin > 10M INPUT PULSE t rise < 2ns PULSE WIDTH > 200ns PULSE WIDTH 10% VIN 50% -VIN t off -1V 10% VOUT 90% 90% -15V
0210
1.0 -0.1 -0.5 -1.0 1000

RG VIN 50

VOUT D.U.T.

0220

SWITCHING TIMES vs. ON-STATE DRAIN CURRENT

-0V 50% 90%

500

VDD = 15V
SWITCHING TIS - nSEC

RG = R L = 1.4K
100

tr t 4(on)

50

t off

t rise
10

5.0

t d(on)

-5.0

-10

ON-STATE DRAIN CURRENT - (I D(on) ) - mA

0230

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