Amplifier Transistors

NPN Silicon
MAXIMUM RATINGS
Rating Symbol 2N5088 2N5089 Unit
CollectorEmitter Voltage V
CEO
30 25 Vdc
CollectorBase Voltage V
CBO
35 30 Vdc
EmitterBase Voltage V
EBO
3.0 Vdc
Collector Current Continuous I
C
50 mAdc
Total Device Dissipation @ T
A
= 25C
Derate above 25C
P
D
625
5.0
mW
mW/C
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
1.5
12
Watts
mW/C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150 C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
qJA
(1)
200 C/W
Thermal Resistance, Junction to Case R
qJC
83.3 C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(2)
(I
C
= 1.0 mAdc, I
B
= 0) 2N5088
2N5089
V
(BR)CEO
30
25

Vdc
CollectorBase Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0) 2N5088
2N5089
V
(BR)CBO
35
30

Vdc
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0) 2N5088
(V
CB
= 15 Vdc, I
E
= 0) 2N5089
I
CBO

50
50
nAdc
Emitter Cutoff Current
(V
EB(off)
= 3.0 Vdc, I
C
= 0)
(V
EB(off)
= 4.5 Vdc, I
C
= 0)
I
EBO

50
100
nAdc
1. R
JA
is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
November, 2001 Rev. 1
1 Publication Order Number:
2N5088/D
2N5088
2N5089
CASE 2911, STYLE 1
TO92 (TO226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
2N5088 2N5089
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2
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 Adc, V
CE
= 5.0 Vdc) 2N5088
2N5089
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc) 2N5088
2N5089
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(2)
2N5088
2N5089
h
FE
300
400
350
450
300
400
900
1200

CollectorEmitter Saturation Voltage

(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
V
CE(sat)
0.5 Vdc
BaseEmitter On Voltage
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(2)
V
BE(on)
0.8 Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(I
C
= 500 Adc, V
CE
= 5.0 Vdc, f = 20 MHz)
f
T
50 MHz
CollectorBase Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
4.0 pF
EmitterBase Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
eb
10 pF
SmallSignal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz) 2N5088
2N5089
h
fe
350
450
1400
1800

Noise Figure
(I
C
= 100 Adc, V
CE
= 5.0 Vdc, R
S
= 1.0 k, 2N5088
f = 1.0 kHz) 2N5089
NF

3.0
2.0
dB
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2N5088 2N5089
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3
Figure 2. Effects of Frequency
f, FREQUENCY (Hz)
7.0
10
20
30
5.0
Figure 3. Effects of Collector Current
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Noise Current
f, FREQUENCY (Hz)
Figure 5. Wideband Noise Figure
R
S
, SOURCE RESISTANCE (OHMS)
3.0
10
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25C)
NOISE VOLTAGE
e
n
,

N
O
I
S
E

V
O
L
T
A
G
E

(
n
V
)
e
n
,

N
O
I
S
E

V
O
L
T
A
G
E

(
n
V
)
I
n
,

N
O
I
S
E

C
U
R
R
E
N
T

(
p
A
)
N
F
,

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
I
C
= 10 mA
300 A
30 A
R
S
0
3.0 mA
1.0 mA
7.0
10
20
30
5.0
3.0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
R
S
0
f = 10 Hz
100 Hz
1.0 kHz
10 kHz
100 kHz
I
C
= 10 mA
3.0 mA
1.0 mA
300 A
100 A
10 A
R
S
0
10
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
0.1
0.2
0.3
1.0
0.7
2.0
3.0
5.0
7.0
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
0
4.0
8.0
12
16
20
BANDWIDTH = 10 Hz to 15.7 kHz
I
C
= 1.0 mA
500 A
100 A
10 A
100 Hz NOISE DATA
300
200
100
3.0
5.0
7.0
10
20
30
50
70
R
S
, SOURCE RESISTANCE (OHMS)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
V
T
,

T
O
T
A
L

N
O
I
S
E

V
O
L
T
A
G
E

(
n
V
)
N
F
,

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
0
4.0
8.0
12
16
20
Figure 6. Total Noise Voltage
BANDWIDTH = 1.0 Hz I
C
= 10 mA
3.0 mA
1.0 mA
300 A
100 A
30 A
10 A
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
I
C
= 10 mA
300 A
100 A
30 A
3.0 mA
1.0 mA
10 A
BANDWIDTH = 1.0 Hz
R
S
, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
0.5
2N5088 2N5089
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4
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
0.4
1.0
2.0
3.0
4.0
0.3
0.01
h





,

D
C

C
U
R
R
E
N
T

G
A
I
N

(
N
O
R
M
A
L
I
Z
E
D
)
0.05 2.0 3.0 10 0.02 0.03
0.2
1.0 0.1 5.0
F
E
V
CE
= 5.0 V
T
A
= 125C
25C
-55C
0.7
0.5
0.5 0.2 0.3
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Figure 9. On Voltages
I
C
, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 10. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
V
,

V
O
L
T
A
G
E

(
V
O
L
T
S
)
0.01
0
-0.8
-1.2
-1.6
-2.4
T
J
= 25C
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 5.0 V
T
J
= 25C to 125C
-55C to 25C
R
V
B
E
,

B
A
S
E
-
E
M
I
T
T
E
R

T
E
M
P
E
R
A
T
U
R
E

C
O
E
F
F
I
C
I
E
N
T

(
m
V
/
C
)

-0.4
-2.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f
T
,

C
U
R
R
E
N
T
-
G
A
I
N

B
A
N
D
W
I
D
T
H

P
R
O
D
U
C
T

(
M
H
z
)
C
,

C
A
P
A
C
I
T
A
N
C
E

(
p
F
)
8.0
0.8
1.0
2.0
3.0
4.0
6.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
T
J
= 25C
C
cb
C
ob
C
eb
C
ib
1.0 2.0 5.0 3.0 7.0 10 20 30 50 70 100
500
300
200
70
50
100
V
CE
= 5.0 V
T
J
= 25C
Figure 11. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 12. CurrentGain Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
2N5088 2N5089
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5
PACKAGE DIMENSIONS
CASE 2911
ISSUE AL
TO92 (TO226)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERS INCHES
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
V 0.135 --- 3.43 ---
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
2N5088 2N5089
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6
Notes
2N5088 2N5089
http://onsemi.com
7
Notes
2N5088 2N5089
http://onsemi.com
8
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