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BTA12-600BW3G, BTA12-800BW3G Triacs: Silicon Bidirectional Thyristors
BTA12-600BW3G, BTA12-800BW3G Triacs: Silicon Bidirectional Thyristors
0.005
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I
TM
= 17 A Peak)
V
TM
1.55 V
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 30 W)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
I
GT
2.5
2.5
2.5
50
50
50
mA
Holding Current
(V
D
= 12 V, Gate Open, Initiating Current = 100 mA)
I
H
50 mA
Latching Current (V
D
= 12 V, I
G
= 60 mA)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
I
L
70
80
70
mA
Gate Trigger Voltage (V
D
= 12 V, R
L
= 30 W)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
V
GT
0.5
0.5
0.5
1.7
1.1
1.1
V
Gate NonTrigger Voltage (T
J
= 125C)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
V
GD
0.2
0.2
0.2
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, T
J
= 125C, No Snubber)
(dI/dt)
c
2.5 A/ms
Critical Rate of Rise of OnState Current
(T
J
= 125C, f = 120 Hz, I
G
= 2 x I
GT
, tr 100 ns)
dI/dt 50 A/ms
Critical Rate of Rise of Off-State Voltage
(V
D
= 0.66 x V
DRM
, Exponential Waveform, Gate Open, T
J
= 125C)
dV/dt 2000 V/ms
2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
BTA12600BW3G, BTA12800BW3G
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3
+ Current
+ Voltage
V
TM
I
H
Symbol Parameter
V
DRM
Peak Repetitive Forward Off State Voltage
I
DRM
Peak Forward Blocking Current
V
RRM
Peak Repetitive Reverse Off State Voltage
I
RRM
Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
I
DRM
at V
DRM
on state
off state
I
RRM
at V
RRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2
V
TM
I
H
V
TM
Maximum On State Voltage
I
H
Holding Current
MT1
(+) I
GT
GATE
(+) MT2
REF
MT1
() I
GT
GATE
(+) MT2
REF
MT1
(+) I
GT
GATE
() MT2
REF
MT1
() I
GT
GATE
() MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
I
GT
+ I
GT
All polarities are referenced to MT1.
With inphase signals (using standard AC lines) quadrants I and III are used.
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4
Figure 1. RMS Current Derating
I
T(RMS)
, RMS ON-STATE CURRENT (A)
Figure 2. OnState Power Dissipation
I
T(RMS)
, ON-STATE CURRENT (A)
Figure 3. On-State Characteristics
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (V)
Figure 4. Thermal Response
t, TIME (ms)
r
(
t
)
,
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
R
E
S
I
S
T
A
N
C
E
(
N
O
R
M
A
L
I
Z
E
D
)
1
0.1
0.01
110
4
1000 100 10 1 0.1
Figure 5. Hold Current Variation
T
J
, JUNCTION TEMPERATURE (C)
125
110
95
80
12 10 8 6 4 2 0
120, 90, 60, 30
180
65
DC
T
C
,
C
A
S
E
T
E
M
P
E
R
A
T
U
R
E
(
C
)
12 10 8 6 4 2 0
18
16
14
12
10
8
6
4
2
0
20
DC
60
90
120
180
30
P
A
V
,
A
V
E
R
A
G
E
P
O
W
E
R
(
W
)
0.1
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
I
T
,
I
N
S
T
A
N
T
A
N
E
O
U
S
O
N
S
T
A
T
E
C
U
R
R
E
N
T
(
A
)
Typical @ T
J
= 125C
Typical @ T
J
= 125C
Typical @
T
J
= 40C
5
15
25
35
45
55
40 25 10 5 20 35 50 65 80 95 110 125
I
H
,
H
O
L
D
C
U
R
R
E
N
T
(
m
A
)
Typical @ T
J
= 25C
Typical @ T
J
= 25C
Typical @ T
J
= 40C
MT2 Positive
MT2 Negative
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5
T
J
, JUNCTION TEMPERATURE (C)
Figure 6. Gate Trigger Current Variation
T
J
, JUNCTION TEMPERATURE (C)
Figure 7. Gate Trigger Voltage Variation
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
R
G
, GATE TO MAIN TERMINAL 1 RESISTANCE (W)
5k
4k
3k
2k
1k
0
10000 1000 100 10
d
v
/
d
t
,
C
R
I
T
I
C
A
L
R
A
T
E
O
F
R
I
S
E
O
F
O
F
F
S
T
A
T
E
V
O
L
T
A
G
E
(
V
/
s
)
V
D
= 800 Vpk
T
J
= 125C
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
c
L
L
1N4007
200 V
+
MEASURE
I
-
CHARGE
CONTROL
CHARGE
TRIGGER
NONPOLAR
C
L
51 W
MT2
MT1
1N914
G
T
R
I
G
G
E
R
C
O
N
T
R
O
L
200 V
RMS
ADJUST FOR
I
TM
, 60 Hz V
AC
Note: Component values are for verification of rated (di/dt)
c
. See AN1048 for additional information.
1
10
100
40 25 10 5 20 35 50 65 80 95 110 125
I
G
T
,
G
A
T
E
T
R
I
G
G
E
R
C
U
R
R
E
N
T
(
m
A
)
Q2
Q3
Q1
V
D
= 12 V
R
L
= 30 W
0
20
40
60
80
100
120
40 25 10 5 20 35 50 65 80 95 110 125
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
40 25 10 5 20 35 50 65 80 95 110 125
G
A
T
E
T
R
I
G
G
E
R
V
O
L
T
A
G
E
(
V
)
L
A
T
C
H
I
N
G
C
U
R
R
E
N
T
(
m
A
)
Figure 10. Latching Current Variation
T
J
, JUNCTION TEMPERATURE (C)
Q2
Q3
Q1
V
D
= 12 V
R
L
= 30 W
V
D
= 12 V
R
L
= 30 W
Q2
Q3
Q1
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6
PACKAGE DIMENSIONS
TO220
CASE 221A07
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERS INCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
A
K
L
V
G
D
N
Z
H
Q
F B
1 2 3
4
T
SEATING
PLANE
S
R
J
U
T
C
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. NOT CONNECTED
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