1.

Distinguish between conductors, insulators and semiconductors

on the basis of
energy bands.
2. What are extrinsic semiconductors? Mention its types and
explain the mechanism
of conduction in each.
3. xplain the conduction in ! "ype and # "ype semiconductor on
the basis of band
theory.
$. xplain the formation of depletion layer and potential barrier
in a #! %unction
diode.
&. Draw the circuit diagram used to determine the '(
characteristics of a diode and
draw the forward and re)erse bias characteristics of a diode.
xplain the
conclusions drawn from the graph.
*. With the help of a labeled circuit diagram explain the wor+ing
of half wa)e
recti,er and draw the input and output wa)eforms.
-. With the help of a labeled circuit diagram explain the wor+ing
of full wa)e recti,er
and draw the input and output wa)eforms.
.. Write notes on /D, photodiode and solar cell.
0. What is a 1ener diode? Draw the '( characteristics of 2ener
diode. xplain 1ener
brea+down and describe the use of a 2ener diode as a )oltage
regulator.
13. xplain the action of a #!# transistor and an !#! transistor.
4xplain how
conduction ta+es place in !#! and #!# transistor.5
11. Draw the circuit diagram for determining transistor
characteristics and describe the
input and output characteristics of transistor in 67 con,guration
with rele)ant
graphs.
12. Draw the circuit diagram for determining transistor
characteristics and describe the
input and output characteristics of transistor in 6 con,guration
with rele)ant
graphs.
13. xplain the wor+ing of "ransistor ampli,er in 6 con,guration
with necessary
circuit diagram.
1$. xplain the wor+ing of transistor oscillator.
1&. xplain the wor+ing of transistor as a switch.
1*. Draw the symbol, truth table and 7oolean expression for 8r,
9!D and !8" gate.
1-. Draw the symbol and truth table of !8: gate and !9!D
gate.
1.. xplain, how the fundamental logic gates can be reali2ed
using !8: gates alone.
10. xplain how the fundamental logic gates can be reali2ed
using !9!D gates alone.
6hapter 1$ ; <emiconductor lectronics Materials De)ices 9nd <imple 6ircuits
6lass =(( #hysics
Page 1 of 16
Question 14.1:
In an n-type silicon, which of the following statement is true:
(a) lectrons are ma!ority carriers an" tri#alent atoms are the "opants.
($) lectrons are minority carriers an" penta#alent atoms are the "opants.
(c) %oles are minority carriers an" penta#alent atoms are the "opants.
(") %oles are ma!ority carriers an" tri#alent atoms are the "opants.
&nswer
'he correct statement is (c).
In an n-type silicon, the electrons are the ma!ority carriers, while the holes are the
minority carriers. &n n-type semicon"uctor is o$taine" when penta#alent atoms, such as
phosphorus, are "ope" in silicon atoms.
Question 14.(:
)hich of the statements gi#en in *ercise 14.1 is true for p-type semicon"uctors.
&nswer
'he correct statement is (").
In a p-type semicon"uctor, the holes are the ma!ority carriers, while the electrons are
the minority carriers. & p-type semicon"uctor is o$taine" when tri#alent atoms, such as
aluminium, are "ope" in silicon atoms.
Question 14.+:
,ar$on, silicon an" germanium ha#e four #alence electrons each. 'hese are
characterise" $y #alence an" con"uction $an"s separate" $y energy $an" gap
respecti#ely e-ual to (g),, (g).i an" (g)/e. )hich of the following statements is true0
(a) (g).i 1 (g)/e 1 (g),
($) (g), 1 (g)/e 2 (g).i
(c) (g), 2 (g).i 2 (g)/e
(") (g), 3 (g).i 3 (g)/e
&nswer
'he correct statement is (c).
4f the three gi#en elements, the energy $an" gap of car$on is the ma*imum an" that of
germanium is the least.
'he energy $an" gap of these elements are relate" as: (g), 2 (g).i 2 (g)/e
Question 14.4:
In an un$iase" p-n !unction, holes "iffuse from the p-region to n-region $ecause
(a) free electrons in the n-region attract them.
($) they mo#e across the !unction $y the potential "ifference.
(c) hole concentration in p-region is more as compare" to n-region.
(") &ll the a$o#e.
&nswer
'he correct statement is (c).
'he "iffusion of charge carriers across a !unction ta5es place from the region of higher
concentration to the region of lower concentration. In this case, the p-region has greater
concentration of holes than the n-region. %ence, in an un$iase" p-n !unction, holes
"iffuse from the p-region to the n-region.
Question 14.6:
)hen a forwar" $ias is applie" to a p-n !unction, it
(a) raises the potential $arrier.
($) re"uces the ma!ority carrier current to 7ero.
(c) lowers the potential $arrier.
(") 8one of the a$o#e.
&nswer
'he correct statement is (c).
)hen a forwar" $ias is applie" to a p-n !unction, it lowers the #alue of potential $arrier.
In the case of a forwar" $ias, the potential $arrier opposes the applie" #oltage. %ence,
the potential $arrier across the !unction gets re"uce".
Question 14.6:
9or transistor action, which of the following statements are correct:
(a) :ase, emitter an" collector regions shoul" ha#e similar si7e an" "oping
concentrations.
($) 'he $ase region must $e #ery thin an" lightly "ope".
(c) 'he emitter !unction is forwar" $iase" an" collector !unction is re#erse $iase".
(") :oth the emitter !unction as well as the collector !unction are forwar" $iase".
&nswer
'he correct statement is ($), (c).
9or a transistor action, the !unction must $e lightly "ope" so that the $ase region is #ery
thin. &lso, the emitter !unction must $e forwar"-$iase" an" collector !unction shoul" $e
re#erse-$iase".
Question 14.;:
9or a transistor amplifier, the #oltage gain
(a) remains constant for all fre-uencies.
($) is high at high an" low fre-uencies an" constant in the mi""le fre-uency range.
(c) is low at high an" low fre-uencies an" constant at mi" fre-uencies.
(") 8one of the a$o#e.
&nswer
'he correct statement is (c).
'he #oltage gain of a transistor amplifier is constant at mi" fre-uency range only. It is
low at high an" low fre-uencies.
Question 14.<:
In half-wa#e rectification, what is the output fre-uency if the input fre-uency is 6= %7.
)hat is the output fre-uency of a full-wa#e rectifier for the same input fre-uency.
&nswer
Input fre-uency 3 6= %7
9or a half-wa#e rectifier, the output fre-uency is e-ual to the input fre-uency.
>4utput fre-uency 3 6= %7
9or a full-wa#e rectifier, the output fre-uency is twice the input fre-uency.
>4utput fre-uency 3 ( 6= 3 1== %7
Question 14.>:
9or a ,-transistor amplifier, the au"io signal #oltage across the collecte" resistance of (
5> is ( ?. .uppose the current amplification factor of the transistor is 1==, fin" the input
signal #oltage an" $ase current, if the $ase resistance is 1 5>.
&nswer
,ollector resistance, @, 3 ( 5> 3 (=== >
&u"io signal #oltage across the collector resistance, ? 3 ( ?
,urrent amplification factor of the transistor, A 3 1==
:ase resistance, @: 3 1 5> 3 1=== >
Input signal #oltage 3 ?i
:ase current 3 I:
)e ha#e the amplification relation as:
?oltage amplification
'herefore, the input signal #oltage of the amplifier is =.=1 ?.
:ase resistance is gi#en $y the relation:
'herefore, the $ase current of the amplifier is 1= B&.
Question 14.1=:
'wo amplifiers are connecte" one after the other in series (casca"e"). 'he first amplifier
has a #oltage gain of 1= an" the secon" has a #oltage gain of (=. If the input signal is
=.=1 #olt, calculate the output ac signal.
&nswer
?oltage gain of the first amplifier, ?1 3 1=
?oltage gain of the secon" amplifier, ?( 3 (=
Input signal #oltage, ?i 3 =.=1 ?
4utput &, signal #oltage 3 ?o
'he total #oltage gain of a two-stage casca"e" amplifier is gi#en $y the pro"uct of
#oltage gains of $oth the stages, i.e.,
? 3 ?1 ?(
3 1= (= 3 (==
)e ha#e the relation:
?= 3 ? ?i
3 (== =.=1 3 ( ?
'herefore, the output &, signal of the gi#en amplifier is ( ?.
Question 14.11:
& p-n photo"io"e is fa$ricate" from a semicon"uctor with $an" gap of (.< e?. ,an it
"etect a wa#elength of 6=== nm0
&nswer
nergy $an" gap of the gi#en photo"io"e, g 3 (.< e?
)a#elength, C 3 6=== nm 3 6=== 1=D> m
'he energy of a signal is gi#en $y the relation:
3
)here,
h 3 Planc5Es constant
3 6.6(6 1=D+4 Fs
c 3 .pee" of light
3 + 1=< mGs

3 +.+1+ 1=D(= F
:ut 1.6 1=D1> F 3 1 e?
> 3 +.+1+ 1=D(= F
'he energy of a signal of wa#elength 6=== nm is =.(=; e?, which is less than (.< e? D
the energy $an" gap of a photo"io"e. %ence, the photo"io"e cannot "etect the signal.
Question 14.1(:
'he num$er of silicon atoms per m+ is 6 1=(<. 'his is "ope" simultaneously with 6
1=(( atoms per m+ of &rsenic an" 6 1=(= per m+ atoms of In"ium. ,alculate the
num$er of electrons an" holes. /i#en that ni3 1.6 1=16 mD+. Is the material n-type or
p-type0
&nswer
8um$er of silicon atoms, 8 3 6 1=(< atomsGm+
8um$er of arsenic atoms, n&s 3 6 1=(( atomsGm+
8um$er of in"ium atoms, nIn 3 6 1=(= atomsGm+
8um$er of thermally-generate" electrons, ni 3 1.6 1=16 electronsGm+
8um$er of electrons, ne 3 6 1=(( D 1.6 1=16 H 4.>> 1=((
8um$er of holes 3 nh
In thermal e-uili$rium, the concentrations of electrons an" holes in a semicon"uctor are
relate" as:
nenh 3 ni
(
'herefore, the num$er of electrons is appro*imately 4.>> 1=(( an" the num$er of
holes is a$out 4.61 1=>. .ince the num$er of electrons is more than the num$er of
holes, the material is an n-type semicon"uctor.
Question 14.1+:
In an intrinsic semicon"uctor the energy gap gis 1.( e?. Its hole mo$ility is much
smaller than electron mo$ility an" in"epen"ent of temperature. )hat is the ratio
$etween con"ucti#ity at 6==I an" that at +==I0 &ssume that the temperature
"epen"ence of intrinsic carrier concentration niis gi#en $y
where n= is a constant.
&nswer
nergy gap of the gi#en intrinsic semicon"uctor, g 3 1.( e?
'he temperature "epen"ence of the intrinsic carrier-concentration is written as:
)here,
5: 3 :olt7mann constant 3 <.6( 1=D6 e?GI
' 3 'emperature
n= 3 ,onstant
Initial temperature, '1 3 +== I
'he intrinsic carrier-concentration at this temperature can $e written as:
J (1)
9inal temperature, '( 3 6== I
'he intrinsic carrier-concentration at this temperature can $e written as:
J (()
'he ratio $etween the con"ucti#ities at 6== I an" at +== I is e-ual to the ratio $etween
the respecti#e intrinsic carrier-concentrations at these temperatures.
'herefore, the ratio $etween the con"ucti#ities is 1.=> 1=6.
Question 14.14:
In a p-n !unction "io"e, the current I can $e e*presse" as
where I= is calle" the re#erse saturation current, ? is the #oltage across the "io"e an" is
positi#e for forwar" $ias an" negati#e for re#erse $ias, an" I is the current through the
"io"e, 5:is the :olt7mann constant (<.61=D6 e?GI) an" ' is the a$solute temperature.
If for a gi#en "io"e I= 3 6 1=D1( & an" ' 3 +== I, then
(a) )hat will $e the forwar" current at a forwar" #oltage of =.6 ?0
($) )hat will $e the increase in the current if the #oltage across the "io"e is increase"
to =.; ?0
(c) )hat is the "ynamic resistance0
(") )hat will $e the current if re#erse $ias #oltage changes from 1 ? to ( ?0
&nswer
In a p-n !unction "io"e, the e*pression for current is gi#en as:
)here,
I= 3 @e#erse saturation current 3 6 1=D1( &
' 3 &$solute temperature 3 +== I
5: 3 :olt7mann constant 3 <.6 1=D6 e?GI 3 1.+;6 1=D(+ F ID1
? 3 ?oltage across the "io"e
(a) 9orwar" #oltage, ? 3 =.6 ?
>,urrent, I
'herefore, the forwar" current is a$out =.=(66 &.
($) 9or forwar" #oltage, ?E 3 =.; ?, we can write:
%ence, the increase in current, II 3 IK D I
3 1.(6; D =.=(66 3 1.(+ &
(c) Lynamic resistance
(") If the re#erse $ias #oltage changes from 1 ? to ( ?, then the current (I) will almost
remain e-ual to I= in $oth cases. 'herefore, the "ynamic resistance in the re#erse $ias
will $e infinite.
Question 14.16:
Mou are gi#en the two circuits as shown in 9ig. 14.44. .how that circuit (a) acts as 4@
gate while the circuit ($) acts as &8L gate.
&nswer
(a) & an" : are the inputs an" M is the output of the gi#en circuit. 'he left half of the
gi#en figure acts as the 84@ /ate, while the right half acts as the 84' /ate. 'his is
shown in the following figure.
%ence, the output of the 84@ /ate 3
'his will $e the input for the 84' /ate. Its output will $e 3 & N :
>M 3 & N :
%ence, this circuit functions as an 4@ /ate.
($) & an" : are the inputs an" M is the output of the gi#en circuit. It can $e o$ser#e"
from the following figure that the inputs of the right half 84@ /ate are the outputs of the
two 84' /ates.
%ence, the output of the gi#en circuit can $e written as:
%ence, this circuit functions as an &8L /ate.
Question 14.16:
)rite the truth ta$le for a 8&8L gate connecte" as gi#en in 9ig. 14.46.
%ence i"entify the e*act logic operation carrie" out $y this circuit.
&nswer
& acts as the two inputs of the 8&8L gate an" M is the output, as shown in the following
figure.
%ence, the output can $e written as:
'he truth ta$le for e-uation (i) can $e "rawn as:
&
M
= 1
1 =
'his circuit functions as a 84' gate. 'he sym$ol for this logic circuit is shown as:
Question 14.1;:
Mou are gi#en two circuits as shown in 9ig. 14.46, which consist of 8&8L gates. I"entify
the logic operation carrie" out $y the two circuits.
&nswer
In $oth the gi#en circuits, & an" : are the inputs an" M is the output.
(a) 'he output of the left 8&8L gate will $e , as shown in the following figure.
%ence, the output of the com$ination of the two 8&8L gates is gi#en as:
%ence, this circuit functions as an &8L gate.
($) is the output of the upper left of the 8&8L gate an" is the output of the lower
half of the 8&8L gate, as shown in the following figure.
%ence, the output of the com$ination of the 8&8L gates will $e gi#en as:
%ence, this circuit functions as an 4@ gate.
Question 14.1<:
)rite the truth ta$le for circuit gi#en in 9ig. 14.4; $elow consisting of 84@ gates an"
i"entify the logic operation (4@, &8L, 84') which this circuit is performing.
(%int: & 3 =, : 3 1 then & an" : inputs of secon" 84@ gate will $e = an" hence M31.
.imilarly wor5 out the #alues of M for other com$inations of & an" :. ,ompare with the
truth ta$le of 4@, &8L, 84' gates an" fin" the correct one.)
&nswer
& an" : are the inputs of the gi#en circuit. 'he output of the first 84@ gate is . It
can $e o$ser#e" from the following figure that the inputs of the secon" 84@ gate
$ecome the out put of the first one.
%ence, the output of the com$ination is gi#en as:
'he truth ta$le for this operation is gi#en as:
& : M (3& N :)
= = =
= 1 1
1 = 1
1 1 1
'his is the truth ta$le of an 4@ gate. %ence, this circuit functions as an 4@ gate.
Question 14.1>:
)rite the truth ta$le for the circuits gi#en in 9ig. 14.4< consisting of 84@ gates only.
I"entify the logic operations (4@, &8L, 84') performe" $y the two circuits.
&nswer
(a) & acts as the two inputs of the 84@ gate an" M is the output, as shown in the
following figure. %ence, the output of the circuit is .
'he truth ta$le for the same is gi#en as:
&
M
= 1
1 =
'his is the truth ta$le of a 84' gate. %ence, this circuit functions as a 84' gate.
($) & an" : are the inputs an" M is the output of the gi#en circuit. :y using the result
o$taine" in solution (a), we can infer that the outputs of the first two 84@ gates
are as shown in the following figure.
are the inputs for the last 84@ gate. %ence, the output for the circuit can $e
written as:
'he truth ta$le for the same can $e written as:
& : M (3&O:)
= = =
= 1 =
1 = =
1 1 1
'his is the truth ta$le of an &8L gate. %ence, this circuit functions as an &8L gate.