Production specification

P-Channel Enhancement Mode Power Mosfet BL2305

C277 www.gmicroelec.com
Rev.A 1
FEATURES
Super High Dense Cell Design for Extremely
Low R
DS(ON)

Reliable and Rugged

APPLICATIONS
Power Management in Notebook.
Portable Equipment.
Battery Powered System.
SOT-23

ORDERING INFORMATION

Type No. Marking Package Code

BL2305 A50TF SOT-23

MAXIMUM RATING @ Ta=25 unless otherwise specified
Symbol Parameter Value Units
V
DSS
Drain-Source voltage -20 V
V
GSS
Gate -Source voltage 12 V
I
D
Maximum Drain current TA=25
TA=70
-4.2
-3.4
A
I
DM
Pulsed Drain current -10 A
P
D
Power Dissipation 1.37 W
R
JA
Thermal resistance,Junction-to-Ambient 90 /W
T
J,
T
stg

Operating Junction and Storage
Temperature Range
-55~+150





Pb
Lead-free
Production specification

P-Channel Enhancement Mode Power Mosfet BL2305


C277 www.gmicroelec.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
=0V,I
D
=-250A -20 - -
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
, I
D
=-250A -0.5 - -
V
Forward Transconductance gfs V
DS
=-5V,I
D
=-2.8A - 9 - S
V
DS
=0V, V
GS
=12V - - 100
Gate-body Leakage I
GSS
V
DS
=0V, V
GS
=-12V - - -100
nA
V
DS
=-20V, V
GS
=0V - - -1
Zero Gate Voltage Drain Current I
DSS
V
DS
=-16V,V
GS
=0V - - -10
A
Drain-Source on-resistance R
DS(ON)
V
GS
=-10V,I
D
=-4.5A
V
GS
=-4.5V,I
D
=-4.2A
V
GS
=-2.5V,I
D
=-2.0A
V
GS
=-1.8V,I
D
=-1.0A
-
-
-
-
-
-
-
-
53
65
100
250
m
Diode forward voltage V
SD
V
GS
=0V,I
S
=-1.2A - - -1.2 V
Total Gate Charge Qg - 10.6 -
Gate-Source Charge Qgs - 2.32 -
Gate-Drain Charge Qgd
V
DS
=-16V,V
GS
=-4.5V,
I
D
=-4.2A
- 3.68 -
nC
Input capacitance C
ISS
- 740 -
Output capacitance C
OSS
- 167 -
Reverse transfer capacitance C
RSS
V
DS
=-15V,V
GS
=0V,f=1.0MHz
- 126 -
pF
Turn-On Delay Time t
D(ON)
- 5.9 -
Rise Time t
R
- 3.6 -
Turn-Off Delay Time t
D(OFF)
- 32.4 -
Fall Time t
R
V
DS
= -15V, I
D
= -4.2A,
R
G
= 6, V
GS
= -10V,
R
D
= 3.6
- 2.6 -
ns
Reverse Recovery Time Trr - 27.7 - ns
Reverse Recovery Charge Qrr
I
S
=-4.2A,V
GS
=0
dI/dt=100A/us - 22 - nC
TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified

Production specification

P-Channel Enhancement Mode Power Mosfet BL2305


C277 www.gmicroelec.com
Rev.A 3

Production specification

P-Channel Enhancement Mode Power Mosfet BL2305


C277 www.gmicroelec.com
Rev.A 4









Production specification

P-Channel Enhancement Mode Power Mosfet BL2305


C277 www.gmicroelec.com
Rev.A 5
PACKAGE OUTLINE
Plastic surface mounted package SOT-23













SOLDERING FOOTPRINT








Unit : mm

PACKAGE INFORMATION

SOT-23
Dim Min Max
A 2.70 3.10
B 1.10 1.50
C 1.0 Typical
D 0.4 Typical
E 0.35 0.48
G 1.80 2.00
H 0.02 0.1
J 0.1 Typical
K 2.20 2.60
All Dimensions in mm
Device Package Shipping
BL2305 SOT-23 3000/Tape&Reel
A
B
C
D
E
J
H
K
G
0.90
0.80
2.00
0.95 0.95