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Extreme ultraviolet
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Extreme ultraviolet radiation (EUV or XUV) or high-energy ultraviolet radiation is
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from 124nm down to 10nm, and therefore (by the PlanckEinstein equation) having
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Its main uses are photoelectron spectroscopy, solar imaging, and lithography.
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In air, EUV is the most highly absorbed component of the electromagnetic spectrum,
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3 EUV damage
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4 See also
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5 References
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EUV generation
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ions; for example, to remove an electron from a +3 charged carbon ion (three electrons
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already removed) requires about 65 eV.[1] Such electrons are more tightly bound than
typical valence electrons. The existence of multicharged positive ions is only possible in a
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electrons accelerate as they return to the parent ion, releasing higher energy photons at
diminished intensities, which may be in the EUV range. If the released photons constitute
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ionizing radiation,
they will also ionize the atoms of the harmonic-generating medium,
[edit]
When an EUV photon is absorbed, photoelectrons and secondary electrons are generated
by ionization, much like what happens when X-rays or electron beams are absorbed by
matter.[2]
The response of matter to EUV radiation can be captured in the following equations:
Point of absorption: EUV photon energy = 92 eV = Electron binding energy +
photoelectron initial kinetic energy
Within 3 mean free paths of photoelectron (1-2nm): Reduction of photoelectron
kinetic energy = ionization potential + secondary electron kinetic energy
Within 3 mean free paths of secondary electron (~30nm):
1. Reduction of secondary electron kinetic energy = ionization potential + tertiary
electron kinetic energy
2. Nth generation electron slows down aside from ionization by heating (phonon
generation)
3. Final generation electron kinetic energy ~ 0 eV => dissociative electron attachment +
heat
where the ionization potential
is typically 7-9 eV for organic materials and 4-5 eV for metals.
The photoelectron subsequently causes the emission of secondary electrons through the
process of impact ionization. Sometimes, an Auger transition is also possible, resulting in
the emission of two electrons with the absorption of a single photon.
Strictly speaking, photoelectrons, Auger electrons and secondary electrons are all
accompanied by positively charged holes (ions which can be neutralized by pulling
electrons from nearby molecules) in order to preserve charge neutrality. An electron-hole
pair is often referred to as an exciton.
For highly energetic electrons, the electron-hole
separation can be quite large and the binding energy is correspondingly low, but at lower
energy, the electron and hole can be closer to each other. The exciton itself diffuses quite a
large distance (>10nm).[3]
As the name implies, an exciton is an excited state; only when it
disappears as the electron and hole recombine, can stable chemical reaction products form.
Since the photon absorption depth exceeds the electron escape depth, as the released
electrons eventually slow down, they dissipate their energy ultimately as heat. EUV
wavelengths are absorbed much more strongly than longer wavelengths, since their
corresponding photon energies exceed the bandgaps of all materials. Consequently, their
EUV damage
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Like other forms of ionizing radiation, EUV and electrons released directly or indirectly by the
EUV radiation are a likely source of device damage. Damage may result from oxide
desorption[5] or trapped charge following ionization.[6] Damage may also occur through
indefinite positive charging by the Malter effect. If free electrons cannot return to neutralize
the net positive charge, positive ion desorption[7] is the only way to restore neutrality.
However, desorption
essentially means the surface is degraded during exposure, and
furthermore, the desorbed atoms contaminate any exposed optics. EUV damage has
already been documented
Telescope
(EIT).[8]
http://en.wikipedia.org/wiki/Extreme_ultraviolet[04/01/2015 16:00:24]
Radiation damage is a well-known issue that has been studied in the process of plasma
processing damage. A recent study at the University of
Wisconsin Synchrotron indicated
that wavelengths below 200nm are capable of measurable surface charging.[9] EUV
radiation showed positive charging centimeters beyond the borders of exposure while VUV
(Vacuum Ultraviolet) radiation showed positive charging within the borders of exposure.
Studies using EUV femtosecond pulses at the Free Electron Laser in Hamburg (FLASH)
indicated thermal melting-induced damage thresholds below 100 mJ/cm2.[10]
An earlier study[11]
showed that electrons produced by the 'soft' ionizing radiation could still
penetrate ~100nm below the surface, resulting in heating.
See also
[edit]
References
[edit]
1. ^ webelements.com
2. ^ B. L . Henke et al., J. Appl. Phys. 48, pp. 1852-1866 (1977).
3. ^ P. Broms et al., Adv. Mat. 11, 826-832 (1999).
4. ^ A. Ritucci et al., "Damage and ablation of large band gap dielectrics induced by a 46.9 nm
laser beam," March 9, 2006 report UCRL-JRNL-219656
Laboratory).
5. ^ D. Ercolani et al., Adv. Funct. Mater. 15, pp. 587-592 (2005).
6. ^ D. J. DiMaria et al., J. Appl. Phys. 73, pp. 3367-3384 (1993).
7. ^ H. Akazawa, J. Vac. Sci. & Tech. A 16, pp. 3455-3459 (1998).
8. ^ J-M. Defise et al., Proc. SPIE 3114, pp. 598-607 (1997).
9. ^ J. L. Shohet, http://pptl.engr.wisc.edu/Nuggets%20v9a.ppt
10. ^ R. Sobierajski et al.,
http://hasyweb.desy.de/science/annual_reports/2006_report/part1/contrib/40/17630.pdf
11. ^ FEL 2004 - VUV pulse interactions with solids
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http://en.wikipedia.org/wiki/Extreme_ultraviolet[04/01/2015 16:00:24]
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