PJD09N03

25V N-Channel Enhancement Mode MOSFET

TO-252

FEATURES
RDS(ON), VGS@10V,IDS@30A=9m
RDS(ON), VGS@4.5V,IDS@30A=12m
Advanced trench process technology
High Density Cell Design For Uitra Low On-Resistance
Specially Designed for DC/DC Converters and Motor Drivers
Fully Characterized Avalanche Voltage and Current
Pb free product : 99% Sn above can meet RoHS environment
substance directive request

MECHANICALDATA
Case: TO-252 Molded Plastic
Terminals : Solderable per MIL-STD-202,Method 208
Marking : 09N03

Drain

Gate
Source

Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )

PA RA M E TE R

S ym b o l

Li mi t

U ni t s

D r a i n- S o ur c e Vo l t a g e

VD S

25

G a t e - S o ur c e Vo l t a g e

VGS

+20

ID

50

ID M

240

PD

45
26

TJ , TS T G

-5 5 to + 1 5 0

Avalanche Energy with Single Pulse

ID=23A, VDD=25V, L=0.5mH

EAS

130

Junction-to-Case Thermal Resistance

RJ C

2 .8

C /W

Junction-to Ambient Thermal Resistance(PCB mounted)2

RJ A

50

C /W

C o nt i nuo us D r a i n C ur r e nt
P ul s e d D r a i n C ur r e nt

1)

M a xi m um P o w e r D i s s i p a t i o n
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e

TA = 2 5 O C
TA = 7 5 O C

mJ

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

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PJD09N03
ELECTRICALCHARACTERISTICS
P a ra me te r

S ym b o l

Te s t C o n d i t i o n

M i n.

Ty p .

M a x.

U ni t s

D r a i n- S o ur c e B r e a k d o w n Vo l t a g e

BVD SS

V G S = 0 V , ID = 2 5 0 u A

25

G a t e Thr e s ho l d Vo l t a g e

V G S (th)

V D S = V G S , ID = 2 5 0 u A

D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e

RD S (o n)

VG S =4.5V, ID =30A

9 .5

1 2 .0

D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e

RD S (o n)

VG S =10V, ID =30A

6.5

9.0

Ze r o G a t e Vo l t a g e D r a i n C ur r e nt

ID S S

VD S =25V, VG S =0V

uA

Gate Body Leakage

IG S S

V G S =+2 0 V, V D S =0 V

+100

nA

Forward Transconductance

g fS

V D S = 1 0 V , ID = 1 5 A

25

V D S = 1 5 V , ID = 1 5 A , V G S = 5 V

1 6 .0

2 7 .5

3 .5

S ta ti c

Dynamic

To t a l G a t e C h a r g e

Qg
nC
V D S = 1 5 V , ID = 1 5 A
V G S =10V

G a t e - S o ur c e C ha r g e

Qg s

G a t e - D r a i n C ha r g e

Qg d

7 .2

Tu r n - O n D e l a y Ti m e

Td ( o n )

10.0

13.0

11.0

14.0

35

45

Tu r n - O n R i s e Ti m e

trr

Tu r n - O f f D e l a y Ti m e

VD D =15V , RL =15
ID =1A , VG E N =10V
RG =3.6

td (o ff)

ns

Tu r n - O f f F a l l Ti m e

tf

11 . 2

1 5 .5

In p u t C a p a c i t a n c e

Ciss

1250

O ut p ut C a p a c i t a nc e

Coss

240

R e v e r s e Tr a n s f e r C a p a c i t a n c e

C rs s

185

V D S =1 5 V, V G S =0 V
f=1 .0 MHZ

pF

S o ur c e - D r a i n D i o d e
M a x. D i o d e F o r w a r d C ur r e nt
D i o d e F o rwa rd Vo lta g e

Is

30

VSD

IS = 3 0 A , V G S = 0 V

0 .9 4

1 .2

V DD

Switching
Test Circuit
V IN

V DD

Gate Charge
Test Circuit

RL

V GS

RL

V OUT
RG

1mA

RG

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PJD09N03
Typical Characteristics Curves (TA=25OC,unless otherwise noted)

80

ID - Drain-to-Source Current (A)

80

60

ID - Drain Source Current (A)

V GS=10V, 6.0V, 5.0V, 4.5V, 4.0V

3.5V

40

3.0V
20

2.5V
0

V DS=10V

60

40
T J=125 C
O

20

1.5

VDS - Drain-to-Source Voltage (V)

3.5

50

R DS(ON) - On-Resistance (m W )

15

V GS=4.5V

10

V GS=10V

4.5

I D=30A

40

30
20
o
C C
T125
J =125
O

10
=25oC
TTJJ=25
C
O

20

40

60

80

10

V GS - Gate-to-Source Voltage (V)

ID - Drain Current (A)

FIG.3- On Resistance vs Drain Current

1.4

2.5

FIG.2- Transfer Characteristic

20

1.6

V GS - Gate-to-Source Voltage (V)

Fig. 1-TYPICAL
FORWARD
CHARACTERISTIC
FIG.1- Output
Characteristic

R DS(ON) - On-Resistance (m W )

0
0

RDS(ON) - On-Resistance(Normalized)

T J=-55 C

T J=25 C

FIG.4- On Resistance vs Gate to Source Voltage

V GS=10V
I D=30A

1.2

0.8

0.6
-50

-25

25

50

75

100

125

150

TJ - Junction Temperature ( C)

FIG.5- On Resistance vs Junction Temperature

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PJD09N03
V GS - Gate-to-Source Voltage (V)

10

Vgs

Qg

Qsw

Vgs(th)

V DS=15V
I D=15A

8
6
4
2
0
0

Qg(th)
Qgs

Qg

Qgd

1.1
1
0.9
0.8
0.7
0.6
-50

-25

25

50

75

100

125

150

TJ - Junction Temperature (o C)

IS - Source Current (A)

25

30

29

I D=250uA

28

27

26

25
-50

-25

25

50

75

100

125

150

TJ - Junction Temperature (o C)

Fig.8 - Threshold Voltage vs Temperature

100

20

Fig.7 - Gate Charge

BVDSS - Breakdown Voltage (V)

Vth - G-S Threshold Voltage (NORMALIZED)

I D=250uA

1.2

15

Qg - Gate Charge (nC)

Fig.6 - Gate Charge Waveform

1.3

10

Fig.9 - Breakdown Voltage vs Junction Temperature

V GS =0V

10

T J=125 OC
T J=25 OC

T J=-55 OC
0.1
0.2

0.4

0.6

0.8

1.2

1.4

VSD - Source-to-Drain Voltage (V)

Fig.10 - Source-Drain Diode Forward Voltage

LEGALSTATEMENT

Copyright PanJit International, Inc 2006

The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-MAY.29.2006

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