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Sato et al.
(54)
5,527,628 A
PRODUCING SAME
5,616,164 A
5,736,074 A
N'
ot1ce:
Sbj
u ect to an yd'l'
1sc a1mer, t h e term 0 fh'
t is
patent is extended or adjusted under 35
Feb. 11,2003
5,891,212 A *
US 6,517,602 B2
4/1997
4/1998
6,312,498 B1 * 11/2001
75/335
05-50286
10-211469
2/1993
11/1998
* cited by examiner
(65)
(30)
(JP)
(JP)
.... ..
2000-200599
Aug. 9, 2000
(JP)
..................................... ..
2000-241610
(51)
(52)
..................................... ..
2000-070534
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References Cited
U.S. Patent
Fig. 1
Feb. 11,2003
Sheet 1 0f 8
US 6,517,602 B2
U.S. Patent
Feb. 11,2003
Fig. 2
Sheet 2 0f 8
US 6,517,602 B2
U.S. Patent
Feb. 11,2003
Sheet 3 0f 8
US 6,517,602 B2
Fig. 3(a)
40
Q55 3i
380
390
400
410
Diameter ( g m)
Fig. 3(b)
40
'
Example 1
30
@b\nocsvoi
|
0.9
0.92
0.94
S phericity
0.96
0.98
420
U.S. Patent
Feb. 11,2003
Sheet 4 0f 8
US 6,517,602 B2
Fig. 4(a)
60
5Q
EX. 2
Numb>er
20
700
750
>
800
850
Diameter ( p m)
Fig. 4(0)
60
50 -
Numbe>r
Com. Ex. 4
40
30
20
10
700
750
U.S. Patent
Feb. 11,2003
Sheet 5 0f 8
US 6,517,602 B2
U S Patent
Feb. 11,2003
Sheet 7 0f 8
US 6,517,602 B2
U S Patent
Feb. 11,2003
Sheet 8 0f 8
. I 52.005552:
US 6,517,602 B2
US 6,517,602 B2
1
apparatus.
FIELD OF THE INVENTION
PRIOR ART
15
25
raggedness.
35
or in an inert gas.
erably 5 nm or less.
45
(1) Sphericity
The solder balls are required to have high sphericity. In an
atomic % or more.
55
65
US 6,517,602 B2
4
gen.
invention;
10
invention;
15
solder ball;
25
EXAMPLE);
FIG. 7 is a scanning-type electron photomicrograph
shoWing a surface condition of the solder ball having surface
EXAMPLE);
CuBi alloy.
The ?rst solder ball of the present invention comprises Ag
and/or Cu, the balance being substantially Sn. In the solder
ball of this composition, the content of Ag is 0.58 mass %,
35
7 (EXAMPLE);
FIG. 9 is a scanning-type electron photomicrograph
shoWing a surface condition of the solder ball of Sample No.
7 (EXAMPLE);
FIG. 10 is a scanning-type electron photomicrograph
shoWing a surface condition of the solder ball of the present
invention; and
FIG. 11 is a scanning-type electron photomicrograph
[1] Solderballs
(A) Composition
55
in?uence on environment.
US 6,517,602 B2
6
5
(2) Solder Alloys Containing No Pb
Solder alloys containing no Pb generally include alloys
substantially composed of 100% Sn, SnAg alloys such as
alloys).
s a result of investigation on in?uence of elements 35 dendrites of [3-Sn and an intermetallic compound phase of
45
selected from the group consisting of Bi, Ge, Ni, P, Mn, Au,
65
US 6,517,602 B2
8
7
Bi is adjusted Within a range of0.00110 mass %, the solder
TABLE 1
Hardness
(0 C.)
(Hv)
SnCuBi
SnAgCu
SnAgCuBi
225~23O
215~225
205~225
12~18
12~17
17~28
SnZn(Bi)
SnBi(Ag)
175~2OO
135~140
23~33
3s~42
Composition
Ag.
Another element contained in the solder alloy in addition
Melting Point
Type
15
(B) Structure
The solidi?cation structure of the solder ball of the
25
35
have tip ends in contact With each other, the solder ball has
a smooth surface; and thus (4) in a solder ball mostly
45
55
65
cation portions 11, 11. Also, the solder ball has a Wide
smooth surface in the solidi?cation initiation portions 12,
12.
Accordingly, the resultant ball 1 has a relatively smooth
surface With less raggedness. In this case, the area ratio of
US 6,517,602 B2
9
10
surface.
As shoW in FIG. 5(c), a smooth surface is obtained in the
10
(2) Vibrator
15
20
(C) Shape
30
35
(4) Chamber
45
50
droplets 9.
The atmosphere in the chamber 7 is preferably pressur
iZed at a gage pressure of 0.010.3 MPa. When the gage
55
(1) Crucible
65
US 6,517,602 B2
11
12
or in a batch manner.
20
COMPARATIVE EXAMPLE 1
45
high sphericity.
COMPARATIVE EXAMPLE 2
50
55
60
COMPARATIVE EXAMPLE 3
EXAMPLE 1
65
US 6,517,602 B2
13
14
TABLE 2
Sample
No.
15
20
Sn
Pb
Ag
Cu
Bi
Ge
0.4
0.5
10
Bal.
37.1
2*
Bal.
Bal.
Bal.
2.0
5*
Bal.
0.3
Bal.
1.9
Bal.
3.5
Bal.
5.5
Bal.
2.1
0.5
10
Bal.
3.4
0.7
11
Bal.
4.5
0.3
12
Bal.
2.0
3.0
13
Bal.
3.1
0.5
2.1
14
Bal.
5.9
1.9
10.0
15
Bal.
3.6
0.001
Sample
No.
Rollability
No
2
3
82
79
X
A
25
59
5*
30 6
84
66
X
A
7
8
9
10
11
12
35
13
14
15
55
No
49
29
NO
31
28
20
51
Q
Q
0
0
0
0
0
0
Q
55
65
US 6,517,602 B2
15
16
TABLE 3
surface.
Sample
No.
Ag
Cu
16
17
18
19
20
21
22
23
24
25
26
27
Bal.
Bal.
Bal.
Bal.
Bal.
Bal.
Bal.
Bal.
Bal.
Bal.
Bal.
Bal.
1.0
3.5
4.4
1.1
3.5
4.5
0.3
0.7
1.2
0.3
0.8
1.2
0.020
0.010
0.198
0.009
0.009
0.008
0.105
0.136
0.177
0.008
0.007
0.007
Mn:
Ge:
Bi:
Mn:
Ge:
Bi:
Ni:
Sb:
P
Ni
Sb
P
0.018
0.007
0.190
0.003
0.006
0.001
0.100
0.130
0.172
0.002
0.001
0.002
28
29
30
20
31
32
Bal.
Bal.
Bal.
Bal.
Bal.
1.1
2.1
3.0
3.5
4.5
0.3
1.2
0.5
0.7
0.3
0.006
0.080
0.012
0.054
0.013
33
34
35
25 36
37
Bal.
Bal.
Bal.
Bal.
Bal.
1.0
2.1
3.1
3.5
4.5
0.3
1.2
0.5
0.7
0.4
0.005
0.005
0.005
0.004
0.003
Au
Pd
Ge
In
Ge
In
Au
Pd
Ge
In
Ge
In
0.004
0.075
0.006
0.050
0.005
0.005
0.001
0.001
0.004
0.002
0.001
0.001
10
Maximum
Content (amount)
Sn
Element in
of Second
Additional Element
Total Amount
Sample
Rollability
Smoothness
16
17
18
19
Q
Q
Q
Q
Q
Q
Q
X
20
35 21
0
0
X
X
22
23
24
25
Q
Q
Q
0
Q
Q
Q
X
26
27
0
0
X
X
28
29
30
31
32
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
33
45 34
35
36
37
0
0
0
0
0
X
X
X
X
X
30
Surface
No.
40
mass % or more.
60
(mass %).
65
US 6,517,602 B2
17
18
selected from the group consisting of Bi, Ge, Ni, P, Mn, Au,
Pd, Pt, S, In and Sb, the balance being substantially Sn.
ragged surface.
These results indicate that to provide solder balls based on
1O
substantially Sn.
15
substantially Sn.
11. The solder ball according to claim 8, Wherein said
solder ball comprises 14.5 mass % of Ag, 0.31.2 mass %
of Cu, and 0.0060.1 mass % of said second additional
no Pb.
35
ing atmosphere.
17. The method for producing a solder ball according to
claim 16, Wherein said reducing atmosphere is an inert gas
selected from the group consisting of Bi, Ge, Ni, P, Mn, Au,
Pd, Pt, S, In and Sb, the balance being substantially Sn.
0.95 or more.
45