Order this document

by 2N5883/D

SEMICONDUCTOR TECHNICAL DATA



 
 

 
 

" $ 
#  !!" !
. . . designed for generalpurpose power amplifier and switching applications.
Low CollectorEmitter Saturation Voltage
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
Low Leakage Current
ICEX = 1.0 mAdc (max) at Rated Voltage
Excellent DC Current Gain
hFE = 20 (min) at IC = 10 Adc
High Current Gain Bandwidth Product
f = 4.0 MHz (min) at IC = 1.0 Adc

*Motorola Preferred Device

25 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 80 VOLTS
200 WATTS

MAXIMUM RATINGS (1)

Rating

CollectorEmitter Voltage

Symbol

2N5883
2N5885

2N5884
2N5886

Unit

VCEO

60

80

Vdc

CollectorBase Voltage

VCB

60

80

Vdc

EmitterBase Voltage

VEB

5.0

Vdc

Collector Current Continuous

Peak

IC

25
50

Adc

Base Current

IB

7.5

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25_C

PD

200
1.15

Watts
W/_C

TJ, Tstg

65 to + 200

_C

Operating and Storage Junction

Temperature Range

CASE 107
TO204AA
(TO3)

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

JC
0.875
_C/W
(1) Indicates JEDEC registered data. Units and conditions differ on some parameters and
reregistration reflecting these changes has been requested. All above values most or exceed
present JEDEC registered data.

PD, POWER DISSIPATION (WATTS)

200
175
150
125
100
75
50
25
0

25

50
75
100
125
150
TC, CASE TEMPERATURE (C)

175

200

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data


   

*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

2N5883, 2N5885
2N5884, 2N5886

VCEO(sus)

60
80

Vdc

2N5883, 2N5885
2N5984, 2N5886

ICEO

2.0
2.0

mAdc

1.0
1.0
10
10

1.0
1.0

IEBO

1.0

mAdc

hFE

35
20
4.0

100

VCE(sat)

1.0
4.0

Vdc

VBE(sat)
VBE(on)

2.5

Vdc

1.5

Vdc

CurrentGain Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
Output Capacitance
2N5883, 2N5884
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
2N5885, 2N5886

fT
Cob

4.0

MHz

1000
500

pF

SmallSignal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 kHz)

hfe

20

tr
ts
tf

0.7

1.0

0.8

CollectorEmitter Sustaining Voltage (1)

(IC = 200 mAdc, IB = 0)
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
Collector Cutoff Current (VCE = 40 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)

ICEX

mAdc

2N5883, 2N5885
2N5884, 2N5886
2N5883, 2N5885
2N5884, 2N5886

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)

ICBO

mAdc

2N5883, 2N5885
2N5884, 2N5886

Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain (1) (IC = 3.0 Adc, VCE = 4.0 Vdc)

DC Current Gain (1) (IC = 10 Adc, VCE = 4.0 Vdc)
DC Current Gain (1) (IC = 25 Adc, VCE = 4.0 Vdc)
CollectorEmitter Saturation Voltage (1) (IC = 15 Adc, IB = 1.5 Adc)
CollectorEmitter Saturation Voltage (1) (IC = 25 Adc, IB = 6.25 Adc)
BaseEmitter Saturation Voltage (1) (IC = 25 Adc, IB = 6.25 Adc)
BaseEmitter On Voltage (1) (IC = 10 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

SWITCHING CHARACTERISTICS
Rise Time

(VCC = 30 Vdc, IC = 10 Adc,

IB1 = IB2 = 1.0 Adc)

Storage Time
Fall Time

* Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width
300 s, Duty Cycle

v 2.0%.

VCC

(2) fT = |hfe| ftest.

30 V

TURNON TIME
RL

3.0

+ 2.0 V
10

TO SCOPE
tr 20 ns

0
RB
tr
20 ns

2.0

11 V

0.7
0.5

DUTY CYCLE 2.0%

VCC

TURNOFF TIME

RL

30 V
3.0

+9.0 V
10

TO SCOPE
tr 20 ns

0
RB
tr 20 ns
10 to 100 s

VBB

+ 7.0 V

DUTY CYCLE 2.0%

FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.

t, TIME ( s)

10 to 100 s

11 V

TJ = 25C
IC/IB = 10
VCC = 30 V
VBE(off) = 2 V

1.0

0.3

tr

0.2
0.1
0.07
0.05
0.03
0.02
0.3

td

2N5883, 2N5884 (PNP)

2N5885, 2N5886 (NPN)

0.5 0.7 1.0

2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMPERES)

20

Figure 3. TurnOn Time

Figure 2. Switching Time Equivalent Test Circuits

2

Motorola Bipolar Power Transistor Device Data

30

   

r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)

1.0
D = 0.5

0.5

0.2
0.2
0.1
0.1

0.05

0.05

0.02

P(pk)
JC(t) = r(t) JC
JC = 0.875C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) TC = P(pk) JC(t)
DUTY CYCLE, D = t1/t2

0.01
SINGLE PULSE

0.02
0.01
0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0
10
t, TIME (ms)

20

50

100

200

500

1000

2000

Figure 4. Thermal Response

IC, COLLECTOR CURRENT (AMPERES)

100
1 ms

20

2.0
1.0
0.5

TJ = 200C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25C
(SINGLE PULSE)
CURVES APPLY BELOW RATED VCEO

2N5883, 2N5885
2N5884, 2N5886

0.2
0.1
1.0

5 ms

dc

10
5.0

There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
200_C. T J(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.

500 s

50

2.0 3.0
20 30
50 70
5.0 7.0 10
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

100

Figure 5. ActiveRegion Safe Operating Area

10
7.0
5.0

3000

t, TIME ( s)

3.0

ts

2.0

TJ = 25C
2000

ts

1.0
0.7
0.5

tf

0.3

0.5 0.7

1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMPERES)

Figure 6. TurnOff Time

Motorola Bipolar Power Transistor Device Data

Cob
Cib
1000
Cib

700
500

tf

0.2
0.1
0.3

TJ = 25C
VCC = 30 V
IC/IB = 10
IB1 = IB2

C, CAPACITANCE (pF)

2N5883, 2N5884 (PNP)

2N5885, 2N5886 (NPN)

2N5883, 2N5884 (PNP)

2N5885, 2N5886 (NPN)
20

30

300
0.1

0.2

Cob

0.5 1.0 2.0

5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)

50

100

Figure 7. Capacitance

   

PNP DEVICES
2N5883 and 2N5884
1000
700
500

VCE = 4.0 V

TJ = 150C

hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

1000
700
500

NPN DEVICES
2N5885 and 2N5886

300
25C

200

55C
100
70
50
30
20

VCE = 4.0 V
TJ = 150C

300
200
100
70
50

25C

30

55C

20

10
0.3

0.5 0.7 1.0

5.0 7.0 10
2.0 3.0
IC, COLLECTOR CURRENT (AMPERES)

20

10
0.3

30

0.5 0.7

1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMPERES)

20

30

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 8. DC Current Gain

2.0
TJ = 25C
1.6
IC = 2.0 A

5.0 A

10 A

20 A

1.2

0.8

0.4

0
0.01

0.05 0.1
0.5
0.2
1.0 2.0
IB, BASE CURRENT (AMPERES)

0.02

5.0

10

2.0
TJ = 25C
1.6
IC = 2.0 A

10 A

5.0 A

20 A

1.2

0.8

0.4

0
0.01

0.02

0.05 0.1
0.2
0.5
1.0 2.0
IC, COLLECTOR CURRENT (AMPERES)

5.0

10

Figure 9. Collector Saturation Region

2.0

2.0
TJ = 25C

TJ = 25C
1.6
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

1.6

1.2
VBE(sat) @ IC/IB = 10

0.8

VBE @ VCE = 4 V

1.2
VBE(sat) @ IC/IB = 10

0.8

VBE @ VCE = 4 V
0.4

0.4
VCE(sat) @ IC/IB = 10
0

0.3

0.5 0.7 1.0

2.0 3.0

VCE(sat) @ IC/IB = 10
5.0 7.0

10

20

30

0.3

IC, COLLECTOR CURRENT (AMPERES)

0.5 0.7 1.0

2.0 3.0

5.0 7.0

10

20

IC, COLLECTOR CURRENT (AMPERES)

Figure 10. On Voltages

Motorola Bipolar Power Transistor Device Data

30

   

PACKAGE DIMENSIONS

A
N

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.

C
T
E
D

2 PL

0.13 (0.005)
U

T Q

SEATING
PLANE

T Y

Q
0.13 (0.005)

DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V

INCHES
MIN
MAX
1.550 REF

1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC

0.830
0.151
0.165
1.187 BSC
0.131
0.188

MILLIMETERS
MIN
MAX
39.37 REF

26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC

21.08
3.84
4.19
30.15 BSC
3.33
4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

CASE 107
TO204AA (TO3)
ISSUE Z

Motorola Bipolar Power Transistor Device Data

   

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different
applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA / EUROPE: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 18004412447

JAPAN: Nippon Motorola Ltd.; TatsumiSPDJLDC, Toshikatsu Otsuki,

6F SeibuButsuryuCenter, 3142 Tatsumi KotoKu, Tokyo 135, Japan. 0335218315

MFAX: RMFAX0@email.sps.mot.com TOUCHTONE (602) 2446609

INTERNET: http://DesignNET.com

HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 85226629298

Motorola Bipolar Power Transistor Device Data

*2N5883/D*

2N5883/D