AP86T02GH/J-HF

Halogen-Free Product

Advanced Power
Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

Simple Drive Requirement

Low On-resistance

25V

RDS(ON)

6m

ID

Fast Switching Characteristic

G

RoHS Compliant

BVDSS

75A

Description
G

The TO-252 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP86T02GJ) is
available for low-profile applications.
G

D S

TO-252(H)

TO-251(J)

Absolute Maximum Ratings

Parameter

Symbol

Rating

Units

VDS

Drain-Source Voltage

25

VGS

Gate-Source Voltage

+20

ID@TC=25

Continuous Drain Current, VGS @ 10V3

75

ID@TC=100

Continuous Drain Current, VGS @ 10V

62

IDM

Pulsed Drain Current

300

PD@TC=25

Total Power Dissipation

75

Linear Derating Factor

0.5

W/

TSTG

Storage Temperature Range

-55 to 175

TJ

Operating Junction Temperature Range

-55 to 175

Thermal Data
Symbol

Parameter

Rthj-c

Maximum Thermal Resistance, Junction-case

Rthj-a

Maximum Thermal Resistance, Junction-ambient

Data & specifications subject to change without notice

Value

Units

/W

110

/W

1
200808159

AP86T02GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol

Parameter

Test Conditions

Min.

Typ.

25

0.02

V/

VGS=10V, ID=45A

VGS=4.5V, ID=30A

10

BVDSS

Drain-Source Breakdown Voltage

BVDSS/Tj

Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA

RDS(ON)

Static Drain-Source On-Resistance

VGS=0V, ID=250uA
2

Max. Units

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=30A

42

IDSS

Drain-Source Leakage Current

VDS=25V, VGS=0V

uA

Drain-Source Leakage Current (Tj=175 C)

VDS=20V, VGS=0V

250

uA

Gate-Source Leakage

VGS=+20V

+100

nA

ID=30A

23

37

nC

IGSS

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=20V

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

14

nC

VDS=10V

11

ns

td(on)

Turn-on Delay Time

tr

Rise Time

ID=30A

105

ns

td(off)

Turn-off Delay Time

RG=3.3,VGS=10V

32

ns

tf

Fall Time

RD=0.3

ns

Ciss

Input Capacitance

VGS=0V

1830 2930

pF

Coss

Output Capacitance

VDS=25V

490

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

360

pF

Rg

Gate Resistance

f=1.0MHz

1.1

1.6

Min.

Typ.

Source-Drain Diode
Symbol

Parameter

Test Conditions

Max. Units

VSD

Forward On Voltage

IS=45A, VGS=0V

1.3

trr

Reverse Recovery Time

IS=20A, VGS=0V,

28

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/s

15

nC

Min.

Typ.

Drain-Source Avalanche Ratings

Symbol
EAS

Parameter

Test Conditions
4

Drain-Source Avalanche Energy

ID=24A, VDD=20V, L=100uH

Max. Units
29

mJ

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A .
4.Single Pulse Test.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

AP86T02GH/J-HF
200

120

10V
7.0V
5.0V
4.5V

ID , Drain Current (A)

150

T C = 175 C

100

V G =3.0V

50

90

60

V G = 3 .0V
30

0
0

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

16

1.8

I D =30A
T c =25

I D =45A
V G =10V
Normalized RDS(ON)

RDS(ON) (m)

10V
7.0V
5.0V
4.5V

ID , Drain Current (A)

T C =25 C

12

1.4

1.0

0.6
2

25

10

50

75

100

125

150

175

T j , Junction Temperature ( C)

V GS , Gate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

30

T j =175 o C

T j =25 o C

Is (A)

20

Normalized VGS(th) (V)

1.2

10

0.8

0.4

0.0

0.2

0.4

0.6

0.8

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.2

25

50

75

100

125

150

175

T j ,Junction Temperature ( o C)

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature
3

AP86T02GH/J-HF
f=1.0MHz

10000

I D =30A
12

V DS =10V
V DS =15V
V DS =20V

C (pF)

VGS , Gate to Source Voltage (V)

16

C iss
1000

C oss
C rss

100

10

20

30

40

50

Q G , Total Gate Charge (nC)

13

17

21

25

29

V DS ,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

1000

Normalized Thermal Response (Rthjc)

ID (A)

100

1ms
10

10ms
100ms
1s
DC

T c =25 C
Single Pulse

Duty factor=0.5

0.2

0.1

0.1
0.05

PDM

0.02

0.01

Duty factor = t/T

Peak Tj = PDM x Rthjc + T C

Single Pulse

0.01

1
0.1

10

100

0.00001

0.0001

V DS , Drain-to-Source Voltage (V)

0.001

0.01

0.1

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

120

40

2.8V 3V

30

80

T j =25 o C

RDS(ON) (m)

ID , Drain Current (A)

V DS =5V

T j =175 o C

3.2V

3.5V

3.8V

20

40

4.2V
4.5V

10

10V

V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

20

40

60

80

100

I D (A)

Fig 12. Drain-Source On Resistance

ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-252

D
D1

E2

MIN

NOM

MAX

A2

1.80

2.30

2.80

A3

0.40

0.50

0.60

B1

0.40

0.70

1.00

6.00

6.50

7.00

D1

4.80

5.35

5.90

E3

3.50

4.00

4.50

E3
E1

B1

F1

Millimeters

SYMBOLS

2.20

2.63

3.05

F1

0.50

0.85

1.20

E1

5.10

5.70

6.30

E2

0.50

1.10

1.80

--

2.30

--

0.35

0.50

0.65

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

R : 0.127~0.381

A2

A3

(0.1mm

Part Marking Information & Packing : TO-252

Part
86T02GH

LOGO
YWWSSS

Package Code
meet Rohs requirement
for low voltage MOSFET only

Date Code (YWWSSS)

YLast Digit Of The Year
WWWeek
SSSSequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product

ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-251

D

Millimeters

SYMBOLS

c1
D1
E2

E1

A1
B2
F

B1

MIN

NOM

MAX

2.20

2.30

2.40

A1

0.90

1.20

1.50

B1

0.40

0.60

0.80

B2

0.60

0.85

1.05

c
c1

0.40

0.50

0.60

0.40

0.50

0.60

6.40

6.60

6.80

D1

4.80

5.20

5.50

6.70

7.00

7.30

E1

5.40

5.60

5.80

E2

1.30

1.50

1.70

----

2.30

----

7.00

8.30

9.60

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-251

Part Number
86T02GJ
YWWSSS

meet Rohs requirement

for low voltage MOSFET only

Package Code
LOGO

Date Code (YWWSSS)

Y Last Digit Of The Year
WW Week
SSS Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product