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Coupled Charged Devices

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CHARGE COUPLED DEVICES
CCD DEVICE
Charged coupled devices are being used these days even in studio cameras of full
broadcast quality. CCD Device is a kind of transducer which converts optical image into
electrical signal. In order to understand the working of a CCD chip consider its
construction as shown in Fig. 1. Initially with V=0, there will be an even distribution of
holes (majority carriers) in the substrate doped with P type of impurities.
V

Fig. 1: A
CCD
Element

ELECTRODE
OXIDE (INSULATING LAYER)

SUBSTRATE (P-TYPE SILICON)

If V is
now
increased
to
10
volts, free holes are repelled deeper into the substrate and a depletion layer is formed
below the electrode (fig. 2a). The potential within this depletion layer is highest at the
surface, and decreases with depth.

Generation and transfer of charge


When the light falls on such device, electron hole pairs will be formed in the substrate.
Amount of electrons hole pairs thus generated is proportional to the amount of light or
optical image. Since the substrate is p type, holes formed by the light get mixed with the
majority carriers already present and can therefore be ignored. But the Photo generated
electrons will get attracted by the positive potential forming an inversion layer, dominated
by electrons just below the electrode. Recombination of electrons hole pairs cannot
occur as there are no free holes in the inversion and depletion layers. Also the negative
charge on the electrons causes the potential at the semi-conductor surface to drop. This
in turn reduces the depth of the depletion layer. (Fig. 2b) You may also note that this
mechanism sets a theoretical limit on the storage capacity of a CCD since the depletion
layer is must to prevent recombination.

Induction Course (TV)

+ 10 V

+ 10 V

Fig. 2:

Inversion
Layer
Reduced
Depletion
Layer

eeee

p
Light

(b)

(a)

Generation of Charge

Charge Coupling
Now it is important to convert the charge packets into an output voltage. The process by
which charge packets are moved through the device and eventually delivered to the
amplifier is known as charge-coupling (sometimes charge transfer) figure 3 shows this
process in three stages. When V2 goes positive a depletion layer is formed in the usual
way, so that as V2 becomes more positive than V1 the charge packet will move to the
new site without encountering any free holes in the process.
10V

V1

V2

10V

0V

V2

V1

0V

Fig. 3:

V1
10V

V2
0V

eeee

V1
5V
eee

STABLE
(a)

V2
5V
eee

Layer
Collapsing

Layer
Groing
(b)

V1
0V

V2
10V
eeee

STABLE
(c)

Process of Charge Coupling


This process of coupling the charge between adjacent electrodes continues until the
whole charge image is routed to the output stage. It would be impractical to control
every electrode individually as this would require far too many connections to the device.
One solution is to connect every 3 rd electrode together and drive them with a 3-phase
clock signal as shown in figure 4.
One of the clock phases is held high and the other two are held low during the charge
collection and storage period. In this way charge image is built up under the on
electrodes. Switching on the three phase clocks will then shift the charge packets
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through the device towards the on chip amplifier. It is important to notice that with the 3phase clock system 3 electrodes are required for every picture element.
3
2

Fig. 4:
1
Phase
Clocking in a
CCD

Charge

2
3

Detection
In order to convert charge image to a more convenient form, the charge packets are
passed on to an on chip capacitor. Using the relationship V = Q/C gives the output
voltage corresponding to optical image. V here is voltage, Q the charge and C the value
of capacitance. Figure 5 shows the basic principle of charge detection.
1

VRESET

Fig. 5:
O/P
eee

Charge Packets
Reset Clock
O/P
Reset Clock
3

Detection of charge
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In order to understand its working one can note that between charge packets, capacitor
C is charged to V Reset. The next charge packet is then dumped on to C partially
discharging it, resulting in a signal voltage. C must be very small (approx. 0.1 pF) so
that a reasonable signal voltage is developed (approx. 100 mV). The buffer stage is
essential to screen C from external capacitive loading. The output voltage thus
developed across the capacitor is proportional to the optical image or light falling on it.

Buried Channel CCD


In the CCD chip discussed above, the surface of the semiconductor where it meets the
oxide layer has a tendency to trap electrons. This will not allow the complete transfer of
charge and the charge packet will not be emptied completely to receive the next scan.
These traps are called surface traps. This phenomenon results in smearing after the
highlights. This is similar to vidicon lag. Such CCD devices are also sometimes called
as surface channel CCDs. To avoid this problem Buried channel CCD offers charge
transfer well below the surface to avoid these traps. This is achieved by introducing an
extra layer of N type material below the oxide layer (fig. 6). Improvement in CCD
technology has made these CCD element as much more completed than the basic
element discussed above.

Fig. 6: Structure of
buried channel
CCD

N Type
VBIAS

P Type

Two Phase CCDs


Some CCDs are
designed to use two-phase clock instead of more common 3-phase arrangement. To
ensure this kind of transfer in a particular direction 2 phase CCD devices have two levels
of oxide thickness under the electrodes (fig. 7). The depletion region in this case is not
straight as shown but this will ensure the transfer in a particular direction.

Fig. 7: Two
phase CCD

ETC

OXIDE
eeee

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CCD CAMERAS
Introduction
Any camera will need a device to convert optical image into an electrical signal. Now let
us consider a picture frame made of small picture element. For more sharpness or
better resolution we have to increase these elements. This picture frame can now be
focused on to a structure of so many CCD elements. Each CCD element will now
convert the light information on it to a charge signal. All we need now is to have an
arrangement to collect this charge and convert it to voltage. This is the basic principle
on which CCD cameras are based.

Types of CCD chips


There are three different types of CCD chips used as a pick up device for CCD cameras,
namely
Interline transfer type
Frame transfer type
Frame interline transfer type
The only different about these types is the way charge is collected or transferred. CCD
cameras with good resolution offers about 4,00,000 pixels or CCD element.
i)

IT (Interline Transfer) Type CCD

The IT type CCD consists of a light receiving CCD a kind of photo diode, vertical transfer
CCD and horizontal transfer CCD. The light receiving CCD converts light into electrical
signals. Thus the photosensitive and the storage section are interleaved in this type.
For the transfer of charge, during the vertical blanking period the charges are first
transferred to the vertical transfer CCD (1) and during horizontal blanking they are
transferred to the horizontal transfer CCD (2) for each scanning line (1H) in sequence.
The charges transferred to the horizontal transfer CCD are transferred at horizontal
scanning speed to the signal detector where they are converted into a voltage.

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Fig. 8: Interline Transfer Type CCD

ii)

FT (Frame Transfer) Type CCD

These types of chips are bigger in the size, almost twice in size to accommodate
additional storage area. The upper section of this chip is image section and the
lower as storage section with a storage time of 20 ms or half field. The storage
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section is masked and is not exposed to light. FT devices are using shutter during
the transfer of data from light receiving chip to this additional storage chip at fast
rate to reduce smear. The shutter is synchronized with vertical blanking period.
This type is not being in use in most of the present day cameras because of
limitation of larger size, problem relating to the use of shutter and also because of
improvement in IT cameras to reduce smear. Smear is caused when bright light
enters the CCD and is seen as a comet like effect above and below the light
source.

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Fig. 9: Frame Transfer Type CCD


iii)

FIT (Frame Interline Transfer) Type CCD

Although both the IT and FT type CCDs have excellent performance in their way,
they cannot suppress the smear completely which is inherent in the CCD. The FIT
type CCD consists of a light receiving CCD, vertical transfer CCD, storage CCD
and horizontal transfer CCD. For the transfer of charge, during vertical blanking
the charge, the result of light image converted to charge image by the photo diode
(CCD pixel) is transferred to the vertical transfer CCD(2). This takes place after
the residual charge in this CCD the cause of smear has been swept out (1) via
drain. Then the charges are transferred to the storage CCD at high speed (3). It is
the high speed of the charge transfer that is the major factor in reducing smear due
to light.

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Fig. 10: Frame Interline Transfer Type CCD


CCD VS TUBES
The merits and demerits of the CCD and the pickup tube are listed below :

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Merits

CCD
Compact and light weight
No head amplifier, since o/p of
the device is about 400 mV
High sensitivity
No sticking caused when
exposed strong light source.
Reduced image lag.
Low power consumption
Maintenance free
No microphonic noise
No geometric distortion
No warm up time

Smear and blooming occur


Moire
Poor blue sensitivity
High IR sensitivity

Demerits

Pickup tube
No Smear
Wide dynamic range
No moire
No fixed pattern noise.

Sticking easily occurs.


Registration error
Periodic replacement of
tube required
Difficult to handle.
Needs head amp. on target
itself.

Most of the demerits of CCDs have already been removed and these devices have
started replacing studio cameras. Smear has been removed by having better FIT chips
and fast transfer. Resolution have been improved by having more number of pixels.
New automatic has been developed to remove problems relating to lens aberrations.
or 2/3 CCD chips performance has now become comparable to 1 or 1 tubes.
The video chain in CCD cameras is fairly standard with colour balance, flair, matrix,
gamma, contours and knee compression. Automatics include normal white-black
balance and auto iris. Some of the cameras also provide electronic shutter at adjustable
speeds to get clear picture of the fast moving objects.

Latest CCD Cameras


CCD were launched in 1983 for broadcasting with pixel count from a mere 2,50,000
which increased to 20,00,000 in 1994 for HDTV application. Noise and aliasing has
been reduced to negligible level. CCD cameras now offers fully modulated video output
at light level as low as 6.0 lumens. A typical specification for a studio camera now
available in market are some thing like 2/3 inch, FIT, lens on chip CCD with 6,00,000
pixel, 850 lines H resolution, S/N more than 60 dB, sensitivity F-8 (2000 lux) etc.

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