TK15A50D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)

TK15A50D
Switching Regulator Applications

Unit: mm

Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.)

High forward transfer admittance: |Yfs| = 7.0 S (typ.)
Low leakage current: IDSS = 10 A (max) (VDS = 500 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

500

Gate-source voltage

VGSS

30

DC

(Note 1)

ID

15

Pulse

(Note 1)

IDP

60

Drain power dissipation (Tc = 25C)

PD

50

Single pulse avalanche energy

(Note 2)

EAS

542

mJ

Avalanche current

IAR

15

Repetitive avalanche energy (Note 3)

EAR

5.0

mJ

JEITA

Channel temperature

Tch

150

TOSHIBA

Storage temperature range

Tstg

55 to 150

Weight : 1.7 g (typ.)

Drain current

1: Gate
2: Drain
3: Source

JEDEC

SC-67
2-10U1B

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating
Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
2
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

2.5

C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

C/W

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: VDD = 90 V, Tch = 25C (initial), L = 4.1 mH, RG = 25 , IAR = 15 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.

Start of commercial production

2008-07

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TK15A50D
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = 30 V, VDS = 0 V

Drain cut-off current

IDSS

VDS = 500 V, VGS = 0 V

10

V (BR) DSS

ID = 10 mA, VGS = 0 V

500

Vth

VDS = 10 V, ID = 1 mA

2.0

4.0

Drain-source ON-resistance

RDS (ON)

VGS = 10 V, ID = 7.5 A

0.24

0.3

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 7.5 A

2.0

7.0

Input capacitance

Ciss

2300

Reverse transfer capacitance

Crss

10

Output capacitance

Coss

250

50

100

25

140

40

25

15

Drain-source breakdown voltage

Gate threshold voltage

Rise time

VDS = 25 V, VGS = 0 V, f = 1 MHz

tr

Turn-on time

ID = 7.5 A

10 V

VGS
0V

ton

Switching time

RL =26

50
Fall time

VOUT

tf

Turn-off time

VDD 200 V

toff

Duty 1%, tw = 10 s

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

VDD 400 V, VGS = 10 V, ID = 15 A

pF

ns

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

(Note 1)

IDR

15

(Note 1)

IDRP

60

Continuous drain reverse current

Pulse drain reverse current
Forward voltage (diode)

VDSF

IDR = 15 A, VGS = 0 V

1.7

Reverse recovery time

trr

IDR = 15 A, VGS = 0 V,

1600

ns

Reverse recovery charge

Qrr

dIDR/dt = 100 A/s

20

Marking

Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

K15A50D

Part No.
(or abbreviation code)
Lot No.

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.

Note 4

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TK15A50D
ID VDS

ID VDS

50

10

10

7.25

8.5

(A)

16

COMMON SOURCE
Tc = 25C
PULSE TEST

DRAIN CURRENT ID

DRAIN CURRENT ID

(A)

20

6.75
12
6.5
6.25

6
4

VGS = 5.5 V

40

8
30
7.5
20

7
6.5

10

VGS = 6 V

0
0

DRAIN-SOURCE VOLTAGE

10

VDS

10

20

(V)

VDS (V)

COMMON SOURCE
VDS = 20 V
PULSE TEST

30
25
20
100
Tc = 55C

10

0
0

GATE-SOURCE VOLTAGE

12

10

VGS

COMMON SOURCE
Tc = 25
PULSE TEST

ID = 15 A

7.5

3.8
0
0

(V)

DRAIN-SOURCE ON RESISTANCE
RDS (ON) ()

FORWARD TRANSFER ADMITTANCE

Yfs (S)

20

(V)

RDS (ON) ID

PULSE TEST
Tc = 55C
25
100

16

VGS

VDS = 20 V

0.1
0.1

12

GATE-SOURCE VOLTAGE

COMMON SOURCE

10

50

(V)

10

Yfs ID
100

40

VDS

VDS VGS

DRAIN-SOURCE VOLTAGE

(A)
DRAIN CURRENT ID

40

30

DRAIN-SOURCE VOLTAGE

ID VGS
50

COMMON SOURCE
Tc = 25C
PULSE TEST

10

DRAIN CURRENT ID

VGS = 10, 15 V
0.1

COMMON SOURCE
Tc = 25C
PULSE TEST
0.01
0.1

100

(A)

10

DRAIN CURRENT ID

100

(A)

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TK15A50D

COMMON SOURCE
VGS = 10 V
PULSE TEST

DRAIN REVERSE CURRENT IDR

0.6

ID = 15A

0.4

7.5
3.8
0.2

40

40

80

CASE TEMPERATURE

120

Tc

160

COMMON SOURCE
Tc = 25C
PULSE TEST

10

10
1
5
3
1
0.1
0

(C)

0.4

0.2

CAPACITANCE VDS

GATE THRESHOLD VOLTAGE

Vth (V)

(V)

Coss
100

Crss

COMMON SOURCE
VGS = 0 V
Tc = 25C

1
0.1

DRAIN-SOURCE VOLTAGE

VDS

COMMON SOURCE
1 V
DS = 10 V
ID = 1 mA
PULSE TEST
0
80

100

10

(V)

40

80

120

Tc

160

(C)

DYNAMIC INPUT / OUTPUT

CHARACTERISTICS
VDS (V)

80

DRAIN-SOURCE VOLTAGE

60

40

20

120

80

CASE TEMPERATURE

40

CASE TEMPERATURE

PD Tc

40

Tc

160

(C)

500

400

20

VDS

16
VDD = 100 V

300

200

200 COMMON SOURCE

VGS

ID = 15 A
Tc = 25C
PULSE TEST

100

0
0

20

40

TOTAL GATE CHARGE

12

400

0
80

60

Qg

(V)

(pF)

1000

C
CAPACITANCE

VDS

1.4

Vth Tc

f = 1 MHz

DRAIN POWER DISSIPATION

PD (W)

1.2

5
Ciss

0
0

1.0

0.8

DRAIN-SOURCE VOLTAGE

10000

10

VGS = 0 V
0.6

VGS

0
80

100

GATE-SOURCE VOLTAGE

DRAIN-SOURCE ON RESISTANCE
RDS (ON) ()

0.8

IDR VDS
(A)

RDS (ON) Tc
1.0

(nC)

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NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)

rth tw
10

Duty
= 0.5
Duty=0.5
0.2

0.1

0.1
0.05
PDM

0.02

t
0.01 0.01

T
SINGLE PULSE

0.001
10

100

1m

Duty = t/T
Rth (ch-c) = 2.5C/W
10 m

PULSE WIDTH

100 m

tw (s)

SAFE OPERATING AREA

EAS Tch
600

ID max (pulsed) *
100 s *

ID max (continuous)

500

AVALANCHE ENERGY
EAS (mJ)

100

1 ms *

ID

(A)

10

DRAIN CURRENT

10

DC operation
Tc = 25C

0.1

400

300

200

100

0
25

*: SINGLE NONREPETITIVE
0.01 PULSE Tc = 25C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
0.001
1

10

50

75

125

100

150

CHANNEL TEMPERATURE (INITIAL)

Tch (C)
VDSS max
100

DRAIN-SOURCE VOLTAGE

1000

VDS

15 V

(V)

BVDSS
IAR

15 V
VDD
TEST CIRCUIT
RG = 25
VDD = 90 V, L = 4.1 mH

VDS

WAVEFORM

AS =

1
B VDSS

L I2
B

V
VDSS
DD

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TK15A50D
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
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LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
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Do not use or otherwise make available Product or related software or technology for any military purposes, including without
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technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

2013-11-01