IRF840, SiHF840

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V)

Dynamic dV/dt Rating

500

RDS(on) ()

VGS = 10 V

RoHS*

Qg (Max.) (nC)

63

Fast Switching

Qgs (nC)

9.3

Ease of Paralleling

32

Simple Drive Requirements

Qgd (nC)
Configuration

Single

DESCRIPTION

TO-220AB

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

COMPLIANT

Compliant to RoHS Directive 2002/95/EC

D

Available

Repetitive Avalanche Rated

0.85

S
S
N-Channel MOSFET

ORDERING INFORMATION
Package

TO-220AB
IRF840PbF
SiHF840-E3
IRF840
SiHF840

Lead (Pb)-free
SnPb

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

Drain-Source Voltage

VDS

500

Gate-Source Voltage

VGS

20

Continuous Drain Current

VGS at 10 V

TC = 25 C
TC = 100 C

Pulsed Drain Currenta

ID

UNIT

8.0
5.1

IDM

32
1.0

W/C

EAS

510

mJ

Currenta

IAR

8.0

Repetitive Avalanche Energya

EAR

13

mJ

Linear Derating Factor

Single Pulse Avalanche Energyb
Repetitive Avalanche

Maximum Power Dissipation

TC = 25 C

Peak Diode Recovery dV/dtc

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque

for 10 s
6-32 or M3 screw

PD

125

dV/dt

3.5

V/ns

TJ, Tstg

- 55 to + 150
300d

10

lbf in

1.1

Nm

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).
c. ISD 8.0 A, dI/dt 100 A/s, VDD VDS, TJ 150 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91070
S11-0506-Rev. C, 21-Mar-11

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF840, SiHF840
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER

SYMBOL

TYP.

MAX.

Maximum Junction-to-Ambient

RthJA

62

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

1.0

UNIT

C/W

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient

VDS

VGS = 0 V, ID = 250 A

500

VDS/TJ

Reference to 25 C, ID = 1 mA

0.78

V/C

VGS(th)

VDS = VGS, ID = 250 A

2.0

4.0

Gate-Source Leakage

IGSS

VGS = 20 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

25

VDS = 400 V, VGS = 0 V, TJ = 125 C

250

Gate-Source Threshold Voltage

ID = 4.8 Ab

0.85

gfs

VDS = 50 V, ID = 4.8 Ab

4.9

Input Capacitance

Ciss

VGS = 0 V,

1300

Output Capacitance

Coss

VDS = 25 V,

310

Reverse Transfer Capacitance

Crss

f = 1.0 MHz, see fig. 5

120

Total Gate Charge

Qg

63

Gate-Source Charge

Qgs

9.3

Drain-Source On-State Resistance

Forward Transconductance

RDS(on)

VGS = 10 V

Dynamic

VGS = 10 V

ID = 8 A, VDS = 400 V,
see fig. 6 and 13b

pF

nC

Gate-Drain Charge

Qgd

32

Turn-On Delay Time

td(on)

14

23

49

20

4.5

7.5

8.0

32

2.0

460

970

ns

4.2

8.9

Rise Time
Turn-Off Delay Time

tr
td(off)

Fall Time

tf

Internal Drain Inductance

LD

Internal Source Inductance

LS

VDD = 250 V, ID = 8 A
Rg = 9.1 , RD = 31 , see fig. 10b

Between lead,
6 mm (0.25") from
package and center of
die contact

ns

nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Forward Turn-On Time

ton

MOSFET symbol
showing the
integral reverse
p - n junction diode

A
G

TJ = 25 C, IS = 8 A, VGS = 0 Vb
TJ = 25 C, IF = 8 A, dI/dt = 100 A/sb

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.

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Document Number: 91070

S11-0506-Rev. C, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF840, SiHF840
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

VGS

101

15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V

4.5 V
100

25 C

100

20 s Pulse Width
VDS = 50 V

20 s Pulse Width
TC = 25 C

100

101

VDS, Drain-to-Source Voltage (V)

91070_01

ID, Drain Current (A)

4.5 V

100

20 s Pulse Width
TC = 150 C
100

91070_02

101

VDS, Drain-to-Source Voltage (V)

91070_04

Fig. 2 - Typical Output Characteristics, TC = 150 C

10

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

(Normalized)

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top

VGS, Gate-to-Source Voltage (V)

91070_03

Fig. 1 - Typical Output Characteristics, TC = 25 C

101

150 C

101

ID, Drain Current (A)

ID, Drain Current (A)

Top

3.0
2.5

ID = 8.0 A
VGS = 10 V

2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0

20 40 60 80 100 120 140 160

TJ, Junction Temperature (C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91070

S11-0506-Rev. C, 21-Mar-11

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF840, SiHF840

2500

VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd

Capacitance (pF)

2000

Ciss

1500

1000
Coss
500
Crss

101

ID, Drain Current (A)

VGS, Gate-to-Source Voltage (V)

VDS = 400 V
VDS = 100 V

4
For test circuit
see figure 13

0
15

30

45

60

Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage

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1.4

1.2

10 s

10
100 s
5

1 ms

1
10 ms
5

TC = 25 C
TJ = 150 C
Single Pulse

0.1
0.1

75

QG, Total Gate Charge (nC)

1.0

Operation in this area limited

by RDS(on)

VDS = 250 V

0.8

VSD, Source-to-Drain Voltage (V)

102

16

12

0.6

Fig. 7 - Typical Source-Drain Diode Forward Voltage

ID = 8.0 A

91070_06

VGS = 0 V

91070_07

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

25 C

0.4

VDS, Drain-to-Source Voltage (V)

20

150 C
101

100

0
100
91070_05

ISD, Reverse Drain Current (A)

Vishay Siliconix

91070_08

10

102

103

104

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

Document Number: 91070

S11-0506-Rev. C, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF840, SiHF840
Vishay Siliconix

RD
VDS
VGS

8.0

D.U.T.

ID, Drain Current (A)

RG

6.0

+
- VDD

10 V
Pulse width 1 s
Duty factor 0.1 %

4.0

Fig. 10a - Switching Time Test Circuit

2.0
VDS
90 %
0.0
25

50

75

100

125

150

TC, Case Temperature (C)

91070_09

10 %
VGS
td(on)

Fig. 9 - Maximum Drain Current vs. Case Temperature

td(off) tf

tr

Fig. 10b - Switching Time Waveforms

Thermal Response (ZthJC)

10

1
0 - 0.5

0.2
0.1 0.1
0.05
0.02
0.01

PDM
Single Pulse
(Thermal Response)

t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC

10-2

10-3
10-5
91070_11

10-4

10-3

10-2

0.1

10

102

t1, Rectangular Pulse Duration (S)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91070

S11-0506-Rev. C, 21-Mar-11

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF840, SiHF840
Vishay Siliconix

L
Vary tp to obtain
required IAS

VDS

VDS
tp

VDD
D.U.T.

RG

+
-

IAS

V DD

VDS

10 V
0.01

tp

IAS

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

EAS, Single Pulse Energy (mJ)

1200
ID
3.6 A
5.1 A
Bottom 8.0 A
Top

1000
800
600
400
200
0

VDD = 50 V
25

91070_12c

50

75

100

125

150

Starting TJ, Junction Temperature (C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.
50 k

QG

10 V

12 V

0.2 F
0.3 F

QGS

QGD

VG

D.U.T.

VDS

VGS
3 mA

Charge

Fig. 13a - Basic Gate Charge Waveform

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IG
ID
Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

Document Number: 91070

S11-0506-Rev. C, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF840, SiHF840
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+

D.U.T.

Circuit layout considerations

Low stray inductance
Ground plane
Low leakage inductance
current transformer

Rg

dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test

+
-

VDD

Driver gate drive

P.W.

Period

D=

P.W.
Period
VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery
current

Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt

Re-applied
voltage
Inductor current

VDD

Body diode forward drop

Ripple 5 %

ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91070.

Document Number: 91070

S11-0506-Rev. C, 21-Mar-11

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information
www.vishay.com

Vishay Siliconix

TO-220-1
MILLIMETERS

H(1)

L(1)

M*

b(1)

INCHES

DIM.

MIN.

MAX.

MIN.

MAX.

4.14

4.70

0.163

0.185

0.69

1.02

0.027

0.040

b(1)

1.14

1.73

0.045

0.068

0.36

0.61

0.014

0.024

14.33

15.85

0.564

0.624

9.96

10.52

0.392

0.414

2.41

2.67

0.095

0.105

e(1)

4.88

5.28

0.192

0.208

0.43

1.40

0.017

0.055

H(1)

6.10

6.48

0.240

0.255
0.115

J(1)

2.41

2.92

0.095

13.36

14.40

0.526

0.567

L(1)

3.33

4.04

0.131

0.159

3.53

3.94

0.139

0.155

2.59

3.00

0.102

0.118

ECN: X15-0003-Rev. A, 19-Jan-15

DWG: 6031
Notes
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
Outline conforms to JEDEC outline TO-220AB with exception
of dimension F

C
b
e
J(1)
e(1)

Document Number: 66542

1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 19-Jan-15

Legal Disclaimer Notice

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12

Document Number: 91000