AP4800BGM-HF

Halogen-Free Product

Advanced Power
Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

Simple Drive Requirement

Low On-resistance
Fast Switching Characteristic

BVDSS
RDS(ON)
ID

D
D

30V
18m
9.6A

RoHS Compliant
SO-8

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications
such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

ID@TA=25
ID@TA=70

Rating

Units

30

+20

9.6

7.7

Continuous Drain Current

Continuous Drain Current
1

IDM

Pulsed Drain Current

40

PD@TA=25

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

Thermal Data
Symbol
Rthj-a

Parameter
Maximum Thermal Resistance, Junction-ambient

Data and specifications subject to change without notice

Value

Unit

50

/W
1
201009138

AP4800BGM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)

Parameter

Test Conditions

Drain-Source Breakdown Voltage

Static Drain-Source On-Resistance

Min.

Typ.

30

VGS=10V, ID=9A

9.6

18

VGS=4.5V, ID=7A

17.8

35

VGS=0V, ID=250uA
2

Max. Units

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

1.5

gfs

Forward Transconductance

VDS=10V, ID=9A

22

IDSS

Drain-Source Leakage Current

VDS=30V, VGS=0V

uA

Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V

25

uA

Gate-Source Leakage

VGS=+20V, VDS=0V

+100

nA

ID=9A

9.5

15.2

nC

IGSS

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=15V

2.5

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

5.5

nC

VDS=15V

ns

td(on)

Turn-on Delay Time

tr

Rise Time

ID=1A

ns

td(off)

Turn-off Delay Time

RG=3.3

21

ns

tf

Fall Time

VGS=10V

ns

Ciss

Input Capacitance

VGS=0V

700

1120

pF

Coss

Output Capacitance

VDS=15V

150

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

115

pF

Rg

Gate Resistance

f=1.0MHz

1.8

Min.

Typ.

IS=2.1A, VGS=0V

1.2

Source-Drain Diode
Symbol
VSD

Parameter
2

Forward On Voltage

Test Conditions

Max. Units

trr

Reverse Recovery Time

IS=9A, VGS=0V,

20

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/s

10

nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

AP4800BGM-HF
60

80

T A = 150 o C

10V
7.0V
6.0V
5.0V

60

V G = 4.0V

40

10V
7.0V
6.0V
5.0V
V G = 4.0V

50

ID , Drain Current (A)

ID , Drain Current (A)

T A =25 o C

40

30

20

20

10

10

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.0

28

ID=9A
V G =10V

ID=7A
T A =25
24

Normalized RDS(ON)

RDS(ON) (m)

1.6

20

16

1.2

0.8
12

0.4
2

10

-50

V GS , Gate-to-Source Voltage (V)

100

150

T j , Junction Temperature ( C)

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

20

1.4

16

1.2

Normalized VGS(th) (V)

IS(A)

50

Fig 3. On-Resistance v.s. Gate Voltage

12

T j =150 o C

T j =25 o C

1.0

0.8

0.6

0.4

0.2

0.4

0.6

0.8

1.2

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.4

-50

50

100

150

T j , Junction Temperature ( o C)

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature
3

AP4800BGM-HF
f=1.0MHz

1000

10

800

600

C (pF)

VGS , Gate to Source Voltage (V)

ID=9A
V DS =15V

400

200

C iss

C oss
C rss
0

0
0

12

16

20

Q G , Total Gate Charge (nC)

13

17

21

25

29

V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

100

ID (A)

10

100us

1ms
1

10ms
100ms
1s
0.1

T A =25 o C
Single Pulse

DC

Normalized Thermal Response (Rthja)

Duty factor=0.5

Operation in this area

limited by RDS(ON)

0.2

0.1

0.1

PDM

0.05

t
T
0.02

Duty factor = t/T

Peak Tj = PDM x Rthja + T a

0.01

Rthia=125 /W
Single Pulse

0.01

0.01
0.01

0.1

10

100

0.0001

0.001

0.01

Fig 9. Maximum Safe Operating Area

0.1

10

100

1000

t , Pulse Width (s)

V DS , Drain-to-Source Voltage (V)

Fig 10. Effective Transient Thermal Impedance

VG

VDS
90%

QG
4.5V
QGS

QGD

10%
VGS
td(on) tr

td(off) tf

Fig 11. Switching Time Waveform

Charge

Fig 12. Gate Charge Waveform