IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 40, NO.

2, FEBRUARY 2012

463

A Novel V-Shaped Microstrip Meander-Line

Slow-Wave Structure for W-band MMPM
Fei Shen, Yanyu Wei, Member, IEEE, Hairong Yin, Yubin Gong, Member, IEEE, Xiong Xu,
Shaomeng Wang, Wenxiang Wang, Member, IEEE, and Jinjun Feng, Senior Member, IEEE

AbstractIn this paper, a novel V-shaped microstrip meanderline slow-wave structure (SWS) is proposed for use in a low-voltage
high-efficiency wide-bandwidth miniature millimeter-wave
traveling-wave tube (TWT). The electromagnetic characteristics
and the interaction between the sheet electron beam and slow wave
in this SWS are obtained by utilizing the CST Microwave Studio
and Particle Studio codes, respectively. From our calculations, it is
predicted that, at a beam voltage of 3.7 kV and a beam current of
100 mA, an output power greater than 30 W can be obtained
ranging from 75 to 100 GHz, and this V-shaped microstrip
meander-line TWT will be helpful for a W-band millimeter-wave
power module.
Index TermsMillimeter-wave power module (MMPM), sheet
electron beam, traveling-wave tube (TWT), V-shaped microstrip
meander line.

I. I NTRODUCTION

HE millimeter-wave power module (MMPM) [1][7] is

a millimeter-wave amplifier concept motivated by the
microwave-power-module approach that has both the advantages of a miniature millimeter-wave traveling-wave tube
(TWT), which features high power output and high efficiency,
and a solid-state amplifier, which features small size and low
noise. The MMPM is designed for a wide variety of conventional military and commercial applications, due to its size,
weight, and efficiency advantages over traditional solid-state
and TWT amplifiers.
The coupled cavity [8], ladder [9], folded waveguide [10],
and helix [11] are popular slow-wave structures (SWSs)
employed in conventional TWTs. For MMPM usage, the
coupled-cavity and ladder circuits have high power-handling
capability; however, their bandwidth is relatively narrow. The
folded waveguide has relatively high power-handling capability, but its operating voltage is somewhat high; consequently,
the helical TWT is the primary choice because of its inherently
wide bandwidth, low operating voltage, and relatively high RF
efficiency. However, as the operating frequency increases to WManuscript received June 12, 2011; revised September 11, 2011; accepted
October 26, 2011. Date of publication November 28, 2011; date of current
version February 10, 2012. This work was supported in part by the National
Natural Science Foundation of China under Grant 60971038 and in part by
the Fundamental Research Funds for the Central Universities under Grant
ZYGX2009Z003.
F. Shen, Y. Wei, H. Yin, Y. Gong, X. Xu, S. Wang, and W. Wang are with
the Vacuum Electronics National Laboratory, School of Physical Electronics,
University of Electronic Science and Technology of China, Chengdu 610054,
China (e-mail: ricksf@qq.com; yywei@uestc.edu.cn).
J. Feng is with the Beijing Vacuum Electronics Research Institute, Beijing
100015, China.
Color versions of one or more of the figures in this paper are available online
at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/TPS.2011.2175252

band [12] or above, the dimensional parameters of the helical

TWT become rather small. Consequently, the traditional machining approach becomes problematic. Therefore, microfabrication techniques are of interest for helical TWT fabrication.
However, as the helix is an intrinsically 3-D structure, the
fabrication process consists of a variety of 2-D microfabrication
techniques [13]. The entire fabrication process is rather complicated. Consequently, hunting for a 2-D planar SWS which
features wide bandwidth, low operating voltage, and relatively
high RF efficiency for the MMPM in W-band or above is
extremely desirable.
Therefore, a microstrip meander-line TWT [14][16] may
be an attractive choice for a W-band MMPM, due to its wide
bandwidth, low operating voltage, and relatively high RF efficiency. Its slow wave circuit can be well matched with the solidstate circuits because most of the solid-state circuits are of the
microstrip type and its fabrication is very convenient by utilizing the 2-D MEMS technology [17]. Recently, an article about
the design, fabrication, and testing of a selectively metallized
W-band U-shaped meander-line circuit for a 10-W continuouswave TWT was presented by Sengele et al. [18]. In their
study, a unique challenge of metallizing only the top of a highaspect-ratio serpentine dielectric ridge using conventional planar microfabrication techniques is overcome by using a novel
selective masking and metallization process. This fabrication
process has unique potential in the development of millimeterwave and terahertz regime SWSs for TWTs. In order to further
improve the potential performance of this kind of SWSs, a novel
V-shaped microstrip meander-line miniature TWT [19], [20],
which features wider bandwidth, is now proposed for potential
applications for W-band MMPMs.
In this paper, the wave properties, including dispersion characteristics, interaction impedance, transmission characteristics,
and the spectral response characteristics associated with the
beamwave interaction of this V-shaped microstrip meanderline millimeter-wave TWT, will be calculated by using the
Microwave Studio code and Particle Studio codes from CST
[21], [22].
II. S YSTEM D ESCRIPTION
In this section, both the U-shaped and the V-shaped
microstrip meander-line SWS are described in detail. The
U-shaped microstrip meander-line SWS, a slow-wave transmission line, is of the microstrip type, consisting of an infinite array
of parallel strips with conducting strips connecting the ends of
adjacent parallel strips on a shielded dielectric substrate, and

0093-3813/$26.00 2011 IEEE

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Fig. 1. Model of the V-shaped microstrip meander-line SWS.

Fig. 2. Dimensional parameters of (a) V-shaped meander line and (b) U-shaped meander line.

its single period looks like an English alphabet U. That is

why this structure is named U-shaped microstrip meander-line
SWS. However, our study is focused on the V-shaped microstrip
meander-line SWS, so we describe it graphically in this paper.
Fig. 1 shows the model of the V-shaped microstrip meanderline slow-wave circuit, which consists of a V-shaped metal meander line, a dielectric substrate, and a metal shielding cavity.
Here, this V-shaped metal meander line can be regarded as the
planarization of a rectangular helix [23], [24]. In addition, its
single period looks like an English alphabet V, so this structure is called V-shaped. As shown in Fig. 1, a is the width of the
metal shielding cavity, hm is the height of the metal shielding
cavity, and hd is the thickness of the dielectric substrate.
Fig. 2(a) and (b) shows the dimensional parameters of the
V-shaped and U-shaped metal meander lines. Here, b is the
transverse width of the metal meander line, p is the length of
a single pitch, is the bending angle of the V-shaped metal
meander line, and w and t are the width and the thickness of
the metal strip, respectively.
This V-shaped microstrip meander-line SWS proposed in this
paper may be fabricated by using the art of 2-D microfabrication. First, a boron nitride substrate with a certain thickness
should be selectively metallized at its bottom surface. Then, this
selectively metallized boron nitride substrate should be welded
to a metal substrate. Second, lapping process is used to obtain a
50-m-thick boron nitride substrate. Next, a 5-m-thick copper
film is to be sputter deposited onto the top surface of the boron
nitride substrate. Finally, this 5-m-thick copper film will be
etched to a V-shaped meander line by the technology of electron
beam lithography.

III. E LECTROMAGNETIC P ROPERTIES

In this section, the electromagnetic properties, including dispersion characteristics and interaction impedance, are presented
which were obtained by utilizing the eigenmode solver in the
CST Microwave Studio under the periodic boundary condition.
Subsequently, the transmission characteristics are calculated
using the transient solver in the CST Microwave Studio code.
Our study focuses on the W-band, and the dimensional parameters of the V-shaped microstrip meander-line SWS for simulations are set as follows: b = 0.46 mm, p = 0.112 mm, = 9.8 ,
w = 0.02 mm, t = 0.005 mm, a = 0.92 mm, hm = 0.75 mm,
and hd = 0.05 mm.
Based on these dimensional parameters, the influences of
the sizes of the metal shielding cavity on the dispersion characteristics and interaction impedance are calculated. From our
calculations, we note that the influences on the dispersion characteristics and interaction impedance of the zero-order spatial
harmonic of the fundamental mode are almost negligible as the
width a or height hm increases and when the width a is greater
than 1.5 times of b and the height hm is greater than 0.55 mm.
Here, we assume that the longitudinal central axis of the sheet
electron beam is about 0.06 mm above the slow-wave circuit.
Fig. 3 shows the dispersion characteristics and interaction
impedance comparisons between two microstrip meander-line
slow-wave circuits. Here, the transverse width b, the pitch
length p, and the width w and thickness t of the metal strip of
these two microstrip meander-line SWSs are all set to be equal.
From the chart, we see that the cold bandwidth of the novel
V-shaped structure is much broader than that of the U-shaped

SHEN et al.: NOVEL V-SHAPED MICROSTRIP MEANDER-LINE SWS FOR W-BAND MMPM

Fig. 3.

(a) Dispersion characteristics and (b) interaction impedance comparisons between two microstrip meander-line slow-wave circuits.

Fig. 4.

Transmission characteristics. (a) S11 and S21. (b) Distribution loss.

Fig. 5.

Pattern of axial electric fields.

structure. Furthermore, the interaction impedance of the novel

V-shaped structure is higher than that of the U-shaped structure
except at the lower frequencies.
Using the transient solver in the CST Microwave Studio
code, we can calculate the S-parameter and the field pattern
of the V-shaped microstrip meander-line slow-wave circuit.
The boundary is set as copper with the conductivity of 2.25
107 S/m [25], and the material of the dielectric substrate is
boron nitride with the relative permittivity of 4 [26].

465

From Fig. 4, we see that the transmission loss S21 is

> 1.9 dB, the reflection loss S11 is < 20 dB, and the
distribution loss is less than 0.28 dB/mm in the frequency range
of 75 105 GHz. Fig. 5 shows the longitudinal electric field
distribution of the fundamental mode. From Fig. 5, we see that
the longitudinal electric field covers the entire width of the
slow-wave circuit. Therefore, the width of the sheet electron
beam can be designed to be equal to the circuit transverse width
for pursuing the maximum output power.

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Fig. 8.

Spectrum of the output signal.

Fig. 9.

Spectrum of the backward-wave signal and reflection signal.

Fig. 6. Dispersion curve of the V-shaped microstrip meander-line SWS.

Fig. 7. Output signal.

IV. B EAM WAVE I NTERACTION S IMULATIONS

In this section, the beamwave interaction of this V-shaped
microstrip meander-line TWT is calculated by using the PIC
solver in the CST Particle Studio codes based on the dimensional parameters obtained from the electromagnetic simulations described earlier. In order to obtain a high gain and
suppress backward-wave oscillations, the whole interaction circuit is divided into four sections, and the length of each section
is 25, 25, 25, and 61 pitches, respectively. The adjacent sections
are separated by an attenuator with the length of 15 pitches,
and the overall length of the whole SWS is about 21 mm. In
this simulation, one sheet electron beam with a cross-sectional
area of 0.46 mm 0.06 mm, voltage of 3.7 kV, and current of
100 mA is selected and injected into the SWS. The amplitude
of the focusing magnetic field is set to 1.4 T [27]. At the same
time, the power of the excitation signal is 40 mW.
Fig. 6 shows the dispersion characteristics of this V-shaped
microstrip meander-line SWS, and there are mainly two competing modes which may cause the threat of backward-wave
oscillations.
Fig. 7 depicts the time-domain features of the output signal.
From the figure, the output signal is observed to become stable
after a transient time about 2 ns. That is to say, energy exchange

between the sheet electron beam and the drive signal is already
stable. Meanwhile, the reflection signal is small enough to be
ignored.
Fig. 8 shows the frequency-domain features of the output
signal obtained by Fourier transformation. It is relatively pure.
In this simulation, in order to achieve high gain and suppress
the backward-wave oscillations from higher order modes, the
whole interaction circuit is divided into four sections by three
attenuators. However, if we want to use only one attenuator to
obtain high gain in our simulation, backward-wave oscillations
from higher order modes may occur.
Fig. 9 shows the frequency spectrum of backward-wave oscillations. As can be seen, there are three spectral lines. The first
one is the reflection signal which is small enough to be ignored,
the second one is the backward-wave signal corresponding to
the cross-point of the beam line and the second plasmonic
band in Fig. 6, and the third one is the backward-wave signal
corresponding to the cross-point of the beam line and the third
plasmonic band.
Fig. 10 shows the electron bunching in the output section,
where we can see that accelerating electrons and retarding electrons are periodically arranged along the longitudinal direction.
Fig. 11 shows the electron beam kinetic energy variation
along the axial distance. From the picture, we see that most
of electrons are decelerated. Consequently, most of the kinetic energy of the sheet electron beam is transferred to the

SHEN et al.: NOVEL V-SHAPED MICROSTRIP MEANDER-LINE SWS FOR W-BAND MMPM

467

Fig. 10. Bunching at output section.

Fig. 13. Output power versus the input power.

Fig. 11. Electron kinetic energy versus longitudinal distance.

Fig. 14. Output power along the axial distance.

Fig. 13 shows the output power versus the input power at

97 GHz. The beamwave interaction saturation can be analyzed
by sweeping the input power. As shown in Fig. 13, when the
input power increases to 40 mW, the output power becomes
saturated.
Fig. 14 shows the output power as a function of axial distance, where the frequency is 97 GHz.
V. C ONCLUSION
Fig. 12. Output power versus the frequency.

high-frequency electromagnetic field. Consequently, the excitation signal is amplified.

In order to obtain the instantaneous bandwidth of this
V-shaped microstrip meander-line power amplifier, the output
power versus frequency is shown in Fig. 12. We note that
the output power exceeds 30 W over the frequency range of
75100 GHz and that the peak power is 90 W at 97 GHz,
corresponding to a maximum gain and electronic efficiency of
33.5 dB and 24.3%, respectively.

In this paper, a low-voltage, wide-bandwidth, and highefficiency miniature millimeter-wave TWT for a W-band
MMPM has been designed. According to the simulations described earlier, at a design voltage of 3.7 kV and a current of
100 mA, this TWT can generate an output power of 30 W,
at least covering the frequency range of 75100 GHz, and the
peak power of 90 W at 97 GHz, corresponding to the maximum
gain and electron efficiency of 33.5 dB and 24.3%, respectively.
Meanwhile, the saturated 3-dB bandwidth is ranging from
80 to 100 GHz.

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Fei Shen was born in Jiangsu, China, in November

1983. He received the B.S. degree in electronic information science and technology from the Huaiyin
Normal University, Huaian, China, in 2006. He is
currently working toward the Ph.D. degree in the
National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic
Science and Technology of China, Chengdu, China,
with him being exempted from taking the entrance
examination. He currently majors in physical electronics.
His research interests are in the development of novel millimeter and
terahertz traveling-wave tubes.

Yanyu Wei (M05) was born in 1971. He received

the B.S. degree in nuclear electronics and application
of nuclear technology from Mid-Southern Institute
of Technology, Hengyang, China, in 1993, and the
M.Eng. and Ph.D. degrees in physical electronics
from the University of Electronic Science and Technology of China (UESTC), Chengdu, China, in 1996
and 2000, respectively.
From September 2001 to August 2002, he was
a Postdoctoral Associate with the Vacuum Electrophysics Laboratory, School of Physics, Seoul National University, Seoul, Korea. Since September 2002, he has been with the
National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics, UESTC. His current research interests
are mainly focused on novel high-power microwave and millimeter amplifiers, including helical-groove traveling-wave tubes, plasma-filled microwave
sources, fast-wave microwave sources (particularly gyrotrons) in helical-groove
waveguide, and nonlinear interaction of microwaves with plasma and chaos in
microwave tubes.

Hairong Yin was born in Chongqing, China, in July 1974. He received the B.S.
degree in agriculture from the Southwest Agricultural University, Chongqing,
in 1992, and the M.S. and Ph.D. degrees in electronic technology from the
University of Electronic Science and Technology of China (UESTC), Chengdu,
China, in 2005 and 2007, respectively.
In 2003, he began his research, working on microwave devices at UESTC.
His current research interests are focused on high-power microwave sources.

Yubin Gong (M02) was born in Shandong, China,

in December 1967. He received the B.S. degree
from the Changchun Institute of Optics and Fine
Mechanics, Changchun, China, in 1989, and the M.S.
and Ph.D. degrees in physical electronics from the
University of Electronic Science and Technology of
China (UESTC), Chengdu, China, in 1992 and 1998,
respectively.
In 1992, he began researching on microwave tube
and passive microwave devices at UESTC. In 1997,
he was with the City University of Hong Kong,
Kowloon, Hong Kong, as a Visiting Scholar, where he was involved with the
measured equation of invariance in the time domain. He is currently a Professor
with UESTC. He has authored and coauthored over 200 research papers. His
research interests include high-power microwave sources, broad-band highpower traveling-wave tubes, and computer simulation of microwave tubes.

SHEN et al.: NOVEL V-SHAPED MICROSTRIP MEANDER-LINE SWS FOR W-BAND MMPM

Xiong Xu was born in Fujian, China, in October

1985. He received the B.S. degree (with distinction)
in electronic information science and technology
from the University of Electronic Science and Technology of China, Chengdu, China, in 2006, where he
is currently working toward the Ph.D. degree in the
National Key Laboratory of Science and Technology
on Vacuum Electronics, with him being exempted
from taking the entrance examination. He currently
majors in physical electronics.
He has authored and coauthored over 30 research
papers and is the holder of two China patents. His research interests are in
the development of novel millimeter and terahertz traveling-wave tubes and
backward-wave oscillators.

Shaomeng Wang was born in Shandong, China, in

October 1986. He received the B.S. degree in applied
physics from the University of Electronic Science
and Technology of China, Chengdu, China, in 2007,
where he is currently working toward the Ph.D.
degree in the National Key Laboratory of Science
and Technology on Vacuum Electronics.
His research interests are in the development of
novel millimeter-wave traveling-wave tubes.

469

Wenxiang Wang (M01) was born in Jiangsu,

China, on July 24, 1940. He received the B.S. degree
from Chengdu Institute of Radio Engineering [now
the University of Electronic Science and Technology
of China (UESTC)], Chengdu, China, in 1963.
Since 1963, he has been with the Institute of High
Energy Electronics, UESTC, where he is currently
a Professor. From 1963 to 1978, he was engaged
in the field of microwave electronic tubes, including TWTs, CW magnetrons, forward amplifiers, etc.
From October 1986 to November 1988, he was a
Visiting Scholar with the Plasma Research Laboratory, University of Maryland, College Park, where he investigated and designed the high-power-mode
selective directional coupler for a gyroklystron. He has authored or coauthored
more than 120 research papers. He is the holder of five patents. Since 1979, his
research activities have been concerned with gyrotrons, high-power microwave
tubes, all-metal slow-wave structures, and microwave components and measurements. His research interests include gyrotrons and high-power microwave
tubes and techniques.
Prof. Wang is a senior member of the Chinese Institute of Electronics and the
Vice-Chair of the Chinese Vacuum Electronics Society.

Jinjun Feng (M94SM06) received the B.Sc. degree in electronic engineering from Tsinghua University, Beijing, China, in 1988, and the M.Sc. and
Ph.D. degrees in physical electronics from Beijing
Vacuum Electronics Research Institute (BVERI),
Beijing, in 1990 and 2001, respectively, where his
dissertation was about field emitter array cathodes
and their application in microwave devices.
In 1990, he conducted research on vacuum microelectronics and microwave tubes at BVERI. In
1997, he became a Senior Engineer. In 2000, he
became a Research Professor. From 1999 to 2001, he was the Head of the
Device Computer-Aided Design Division, and since 2003, he has been the Vice
Director of the Vacuum Electronics National Laboratory, BVERI. In 1997, he
was a Visiting Research Fellow with Lancaster University, Lancaster, U.K.,
and in 2001, he was a Postdoctoral Research Associate. His research interests
include the field emitter array cathode technology and microwave vacuum
devices using the microfabrication technology.
Dr. Feng is a senior member of the Chinese Institute of Electronics. He is a
member of the Chinese Vacuum Society (CIV). He has been the Treasurer of
the IEEE Electron Devices Society Beijing Chapter since 1998.