ATL Course: Semiconductor Device Fundamentals Level: Undergraduate Module: A Test: AT Type: Open Book, Open Notes Problem Weighting---1...5 266 3...6 4.5 5.10 6...18 (6 each part) Tuu25 (a-7, b-8, €-10) 8...25AT-2 1. Determine the Miller index for the plane shown below. z 2a } L Ee 2. Fora cubic lattice, skerch and label the (1 0 2] direction and the (2 1 2) plane. 3. Consider the set of Miller indices of the form (hk 1) where h, k, and 1 only take on the values of 0 or 1. (e.g. (010); (110), (111), etc.) For a body centered cubic crystal, which planes having indices of this form contain (pass through) the body centered atom? 4, Determine the density of Arsenic atoms (atoms/cm? ) in GaAs at room temperature.AT3 5. The conduction band density of states function, gc(E), for a hypothetical semiconductor is Sc(E) = constant = No/kT for E2Ec Derive an expression for the electron concentration (n). Take the semiconductor to be nondegenerate. 6. For a piece of Silicon at room temperature doped such that Np =5*10!5/om? and Na = 1106 /cm? determine the following: (To be eligible for partial credit note any parameters obtained from text.) ‘You may assume that n; = 10!°/em? a) The electron and hole concentrations per unit volume. b) The conductivity of the material. c) The location of the Fermi level relative to the energy at the valence band edge.ATA 7. Non-uniformly doped Silicon is maintained under equilibrium conditions at room tempera- ture. For xxy, the material is p-type with N4=105/em®. The electric field intensity within this material is sketched below. A é % Xb x a) On the graph below sketch the electrostatic potential function assuming that the potential is zero as x—>—s0. (i.e. V(—2) =0) } v Xs % x ) On the graph below sketch the energy band diagram for this material carefully positioning Eo, Ey, Ej, and Ep. 1 Xa X x ) Determine the potential drop across this material. (i.e. determine V(+2) — V9) )ATS 8. An infinitely long piece of n-type Silicon in steady-state at room temperature is uniformly illuminated in the region x < 0 such that Gr, = 107/em?~s and is not illuminated for x > 0. eeeeee et 9 The Silicon material has nj = 10°/em?, Np = 10!S/em>, 1, = 437 cm?/V-s, and t, = 10°5/s, Derive the minority carrier distribution, p(x), and sketch the result on the graph below. NOTE: (1) Separate Ap, (x) expressions apply for x>0 and x <0. (2) Both Ap, and dAp,/dx must be continuous at x = 0. PX)