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Giao Trinh Linh Kien Dien Tu GTVT PDF
Giao Trinh Linh Kien Dien Tu GTVT PDF
in tr: i .u
T in: i C.
du
dt
Cun dy: i
1
u.dt
L
Page 1
E
R
2.1.2. Cc thng s ca in tr
a. Gi tr in tr
Gi tr in tr c trng cho kh nng cn tr dng in ca in tr.
Yu cu c bn i vi gi tr in tr l t thay i theo nhit , m v
thi gian,in tr dn in cng tt th gi tr ca n cng nh v ngc li.
Gi tr in tr c tnh theo n v Ohm (), k, M, hoc G.
Gi tr in tr ph thuc vo vt liu cn in, kch thc ca in tr v
nhit ca mi trng.
R .
l
S
Rtt Rdd
100%
Rdd
Page 2
R / T
.106 ( ppm/ oC ) (parts per million)
R
R
T
0oK
P U .I I 2 .R
2
U max
2
I max
.R
R
Dy dn
Dy dn
Cc in cc
Page 4
Dy dn
Dy dn
Li cch in
Dy dn
Dy dn
Vnh in tr
2
1
VR 3
potentiometer
2
1
VR 3
Rheostat
F=1%
J=5%
G=2%
K=10%
H=2,5% M=20%
Cam
Vng
Lc
Lam
Tr s Sai s
0
1
2
1%
2%
3
4
5
6
Page 8
Vch 2
Vch 5
Tm
Xm
Trng
Vng kim
7
8
9
-1
5%
Bc kim
-2
10%
Vch 4
2.1.5. ng dng
in tr c s dng trong cc mch phn p phn cc cho
Transistor m bo cho mch khuch i hoc dao ng hot ng vi hiu sut
cao nht.
in tr ng vai tr l phn t hn dng trnh cho cc linh kin b ph
hng do cng dng qu ln. Mt v d in hnh l trong mch khuch i,
nu khng c in tr th Transistor chu dng mt chiu c cng tng i
ln.
c s dng ch to cc dng c sinh hot (bn l, bp in hay
bng n,) hoc cc thit b trong cng nghip (thit b sy, si,) do in
tr c c im tiu hao nng lng di dng nhit.
Xc nh hng s thi gian: Trong mt s mch to xung, in tr c
s dng xc nh hng s thi gian.
Phi hp tr khng: tn hao trn ng truyn l nh nht cn thc
hin phi hp tr khng gia ngun tn hiu v u vo ca b khuch i, gia
u ra ca b khuch i v ti, hay gia u ra ca tng khuch i trc v
u vo ca tng khuch i sau.
2.2. T in
2.2.1. nh ngha
T in gm 2 bn cc lm bng cht dn in c t song song vi
nhau, gia l lp cch in gi l cht in mi (giy tm du, mica, hay gm,
Page 9
Bn cc
kim loi
Lp in mi
(khng kh)
K hiu
o S
d
Trong :
: H s in mi ca cht cch in
o=8,85.10-12(F/m): Hng s in mi ca chn khng
S: Din tch hiu dng ca 2 bn cc
d: Khong cch gia 2 bn cc
=1
Khng kh
=1,0006
Gm
=30-7500
Mica
=5,5
Du
=4
Giy kh
=2,2
Polystyrene
=2,6
Page 10
Ctt Cdd
Cdd
1
j. X c
j 2fC
1
: dung khng ca t
2fC
T 10 6 ( ppm / oC )
C
Dng r
i C
du
dt
L kim
loi
L kim loi
Lp in mi
Lp in mi
(gia cc bn cc)
Bn cc kim loi
Page 13
K hiu:
+ _
Page 14
Cc l ng
Trc iu khin
Cc l tnh
Page 15
ng trt
(bn trong)
Lp in mi
in cc
Gi tr in dung
in p nh thng
Page 16
3 ch s v 1 ch ci:
n v l pF
2 ch s u c ngha thc
Ch s th 3 biu din bc ca ly tha 10
Ch ci biu din sai s
V d:
0.047/200V: C=0,047F; UBR=200V
2.2/35: C=2,2F; UBR=35V
102J: C=10.102pF=1nF; =5%
.22K:C=0,22F; =10%
Bng ngha ca ch s th 3
Sai s
Ch s
H s nhn
B=0,1%
H=3%
100
C=0,25%
J=5%
101
D (E)=0,5%
K=10%
102
F=1%
M=20%
103
G=2%
N=0,05%
104
105
10-2
10-1
2.2.5. ng dng
Dung khng ca t:
Page 17
1
2fC
Li khng kh
Li st l
Li st bi
Page 18
Cng t trng: H
n
I
l
[A/m]
n: S vng dy
l: Chiu di ca li [m]
I: cng dng in [A]
Cng t cm: B o H
[T] (Tesla)
t
Page 19
i
t
(L: H s t cm [H])
ehc M
i
t
(M: H s h cm)
n2
= o . S
l
i
X L 2fL
R
R
1
2 LC
Cun s cp
Cun th cp
Cun s cp
Cun th cp
Cun th cp
Li st l
Li st bi
Li khng kh
Page 22
Nguyn l:
Khi cho ngun in xoay chiu qua cun s cp, dng in bin thin sinh
ra t trng bin i v c cm ng sang cun th cp sinh ra sc in ng
cm ng e2, mt khc trn cun s cp cng xut hin sc in ng cm ng e1
Cun s cp: e1 n1.
Cun th cp: e2 n2 .
u1 e1 n1
u 2 e2 n 2
T l v dng in:
i1 n 2
i2 n1
T l v cng sut
Cng sut tiu th cun s cp:
P1 u1.i1
P2 u 2 .i2
Page 23
P2
.100%
P1
R1 n1
R2 n2
Page 24
Vng dn
Ec
Vng dn
Vng cm
Ev
Eg
Vng ha tr
Ec
Vng cm
Eg
Ev
Vng ha tr
Vng dn
Vng ha tr
Eg 0eV : Cht dn in
Page 25
Kt lun:
trng thi cn bng, tch s nng 2 loi ht dn lun l hng s
Eg
nn pn n p p p ni pi ni 2 N c N v e kT
Trong cht bn dn pha tp loi n: nn ni pn nn: nn N D
Trong cht bn dn pha tp loi p: p p pi n p nn: p p N A
1.2. Diode bn dn
Khi cho 2 n tinh th bn dn tp cht loi p v n tip xc cng ngh vi
nhau hnh thnh nn chuyn tip p-n (junction p-n).
1.2.1. S hnh thnh min in tch khng gian:
Page 28
Ikt
p
Jp_n
kT p p kT nn
ln
ln
q pn q n p
(2)
Page 29
n
_
Eng
Khi cng in trng tng Et Etx Eng hay Et Etx Eng Etx
rng min ngho tng, cn tr chuyn ng khuch tn, dng khuch tn Ikt gim
ti 0, dng tri Itr tng cht t v nhanh chng t c gi tr bo ha c gi
l dng ngc bo ha. Trng hp ny c gi l phn cc ngc cho chuyn
tip p-n.
Etx
p
Page 30
n
K
Jp-n
m.U
T
I D I S e
1
(3)
Trong :
Is(T) l dng ngc bo ha, ph thuc vo nng ca ht dn thiu
s ti trng thi cn bng, ph thuc vo bn cht cu to ca cht bn dn pha
tp v do ph thuc vo nhit .
Page 31
kT
-23
26mV ; k=1,38.10 J/K:
q
ID(mA)
UAK
UAK(V)
UAK(V)
a)
b)
I D I S . e m.U T
(4)
U AK
m.U T
1 ).
Page 32
UAK(V)
U AK
Page 33
vs
R =1k
1kHz
Page 35
v1
vi
D2
RL
vs
DB
50 Hz
R = 1k
Hnh 12.Chnh lu cu
Page 36
-12/12V
R =10k
vs
1kHz
E =5V
vs
-12/12V
R =10k
1kHz
E =5V
vs
22k
+
2kHz
-12/12V
D
E
5V
vs
47k
D
+
2kHz
E
5V
Page 37
Page 38
vs
1kHz
D
+
E = 2V
Page 40
Page 41
BJT
npn
FET
MOSFET
pnp
Knh cm ng
Knh n
Knh p
JFET
Knh t sn
Knh n
Knh n
Knh p
Knh p
JC
Min lm vic
ng dng
Phn cc ngc
Phn cc ngc
Min ct
Kha
Phn cc thun
Phn cc ngc
Min tch cc
Khuch
Page 43
Phn cc thun
Phn cc ngc
Phn cc thun
Min bo ha
Tch
ngc
Kha
cc
I C I E I CB0
(5)
I E IC I B
(6)
1
IB
I CBo
1
1
ta c:
1
I C .I B 1 .I CBo .I B I CEo
(7)
IC
IB
IC
IB
IC
IE
a)
IE
IB
IE
b)
c
b. CB
c.CC
a. Kt cu CE:
c tuyn vo: I B f U BE U CE const
Do JE phn cc thun m I B I E nn c tuyn vo trong trng hp
ny ging c tuyn ca chuyn tip p-n phn cc thun. Nu UCE tng, m
Page 45
UCE=0.5
V
IC(mA)
15
UCE=0V
UCE=1V
IB=150A
125A
100A
10
5
50
IB=0
0
IC(mA)
UBE(V)
UCE(V)
UCE(V)
Hnh 18. c tuyn vo v c tuyn ra ca kt cu CE
c tuyn ra: I C f U CE I B const
Min khuch i (gn gc), dc ca c tuyn kh ln. Khi UCE tng,
in p UCB cng tng, phn cc ngc ca chuyn tip Jc tng nn IC tng
tuyn tnh theo in p UCE. Khi UCE t gi tr ln ( 2V ) dng Ic t gi tr
bo ha, I C .I B tc l khng ph thuc vo UCE nhng UCE qu ln th IC
tng t ngt do xy ra hin tng nh thng do hiu ng thc l hay hiu ng
xuyn hm. Nu UCE<UBE(on) th dng IC gim nhanh v gi tr 0.
Page 46
Do I C I E nn c tuyn ra trong
IE(mA)
UCE1
UCE2>UCE1
UCB(V)
Hnh 19. c tuyn vo v c tuyn ra ca kt cu CC
IB=150A
125A
100A
IB=0
Page 47
UCE(V)
ng ti tnh
IB0
IB1
Q
IBQ
UCE(V)
VCC
Hnh 20. ng ti tnh v im lm vic tnh
n nh im cng tc tnh khi nhit thay i
Transistor l mt linh kin rt nhy cm vi nhit . Hai thng s ca
Transistor nhy cm vi nhit nht l in p U BE v cng dng
ngc bo ha ICBo. Nu dng ICBo tng, lm cho dng IC tng, s lng ht dn
qua chuyn tip Jc tng lm cho s va chm gia cc ht dn vi mng tinh th
tng, khi lm cho nhit tng v tip tc lm I CBo tng, c th nhit ca
Page 48
I C
I CBo
I C .I B 1 I CBo
Nn:
I C
I CBo
1
I
1 B
I C
(8)
UBB uBE
RB
(3.13)
Page 49
RC
RB
a
iB
UBB
UCC
U BB 0,6V
RB
(3.15)
*Ca ra
Ph-ng trnh Kirchhoff cho vng mch ca ra:
UCC iC RC uCE
(3.16)
-ng ti ca ra:
iC
UCC uCE
RC
(3.17)
u / U
T 1)
i I (e BE
B
B0
iB
iC
U CC
RC
U BB
RB
IBQ
iC
iB
UBEQ Uf UBB
a) c tuyn vo
UBB uBE
RB
UCC uCE
RC
Q
ICQ
IQB
UCEQ
uBE
UCC UCE0
uCE
b) c tuyn ra
+ UCC R2
R1
R3
R1
b
C
a
iB
B
+
uBE
-
iC
+
uCE
E
a
iB
B
+
uBE
-
C
iC
+
uCE
E
R2
b'
(a)
b'
(b)
RB
R1 R2
R1 R2
(3.23)
+ UCC R3
R1
B
+
uBE
-
RT
t0
R2
(a)
R3
R1
C
+
uCE
E
ID0
B
+
uBE
-
R2
C
+
uCE
E
ICB0
(b)
Page 52
+ UCC R2
R1
iB
B
+
uBE
-
iB+iC
+
uCE
E
iE
b
C
R3
R1
a
iB
B
+
uBE
-
R2
b'
(a)
C
iC
+
uCE
E
iE
R4
b'
(b)
U CC u BE
R1 (1 F ) R2
U CC 0,6V
R1 (1 F ) R2
(3.26)
(3.27)
Ph-ng php phn cc c hi tip trn clct nn cn -c gi l phn
cc hi tip (phn hi) clct.
S hnh 3-9b l n nh bng hi tip dng in ni tip. Nguyn l nhsau: khi nhit tng, dng iC tng, dng iE = (iC+ iB) tng lm UR4 tng, in p
uBE= (UR2- UR4) gim, dn n iB gim lm cho iC gim, ko iC v gi tr n nh.
Cc gi tr phn cc c th xc nh bng cch quy v s t-ng -ng
hnh 3-10. Cc gi tr t-ng -ng theo cc cng thc t 3.22 n
2.25 v
RE=R4.
Page 53
b
iC
C
RB
+
uCE
+ uBE
- E
iB
UBB
UCC
iE
RE
b'
U BB 0,6V
RB (1 F ) RE
(3.28)
U CC U CE
RC
(3.30)
1
)
RC
(3.31)
iC
+ UCC RC
R1
iC
iB
+
uCE
-
+
uBE
ICmax
IC
U CC
RC
ICbh
Ti xoay
chiu
IBmax
III
N
Rt
PCmax
ICQ
iE
R2
Parabn bo ho
II
Ti mt
chiu
(b)
(a)
UCbh
UCEQ
M iB=0
I
UCC UCE0
uCE
RC Rt
RC Rt
(3.32)
1
)
Rtxc
(3.33)
Page 55
Page 56
Si02
N+
Vng knh
L
N+
Phin P
(a)
K hiu:
D
G
B
S
(b)
Hnh 4-1 Cu to (a) v k hiu (b) MOSFET giu knh dn N
MOSFET l tranzito hiu ng tr-ng FET (Field Effect Transistor) c cc
ca cch in IG (Insulated Gate) theo cng ngh MOS (Metal Oxide
Semiconductor), cn c tn gi khc l IGFET.
Tranzito -c cu to t mt phin pha tp nh cht bn dn loi P.
Bng cng ngh quang khc v khuch tn -a vo hai khi bn dn loi N pha
tp cao, gn vi cc in cc ngun (S-Source) v cc mng (D-Drain), cch
nhau mt on trong phin gi l knh dn. Vng knh -c ph mt lp in
mi xt (SiO2). Lp kim loi (M-Metal) hoc bn dn a tinh th ph trn lp
Page 57
uGS
uDS
-+
Lp ngho
N+
N+
Lp o in t
Phin P
e ox W
2tox L
(mA/ V2),
(4.2)
uDS
Hnh 4-2 c tuyn V-A khi uDS nh
-+
uGS
uDS
-+
Lp ngho
N+
N+
Knh dn
Phin P
Khi uDS tng, in p uDS phn b dc theo knh dn: ti cc ngun S bng
0 v ti cc D bng uDS. Chnh lch in p qua lp xt gn D l
u GS-uDS nh
hn uGS. in tr-ng trong lp xt gn cc mng s yu nn b dy knh dn s
nh hn (hnh 4-3).
Do tit din knh dn gim dn v pha D nn c tuyn V-A tr nn phi
tuyn (-ng t nt trn th hnh 4-2), ging ch in tch khng gian ca
n in t nn gi l ch Trit (vng trit) :
iD= K[2(uGS- UTR)uDS-u2DS]
(4.3)
2.MOSFET khi uDS ln
Tip tc tng uDS ti gi tr gii hn m knh dn c dy bng khng
(tht li) ti cc mng, in p st trn lp xt dn ti UTR.
Gi tr gii hn ca uDS -c tnh t iu kin:
uGS- uDS = UTR => uDS= uGS- UTR
(4.4)
Khi uDS tng n gi tr gii hn trn gi l ng-ng tht, dng i D vn tn
ti do lp o in t vn ni ti cc mng -c nh in tr-ng phn cc ng-c
ca lp ngho. Bin dng qua knh dn -c xc nh duy nht qua in p
st trn knh dn. Dng in ny c gi tr khng i khi u DSv-t qu gi tr
ng-ng tht (uGS- UTR). Vng lm vic ny gi l vng dng khng i:
iD= K(uGS- UTR)2
(4.5)
Nh- vy c tuyn V-A biu th quan h gia dng iD v in p uDS ca
MOSFET giu knh dn N nh- trn hnh 4-4.
iD
uDS= uGS- UTR
uGS> UTR> 0
uGS= UTR
uDS
|
UTR
uGS
B
S
(b)
uGS= UTR< 0
uDS
Page 61
Ch ngho
UTR
Ch giu
uGS
N+
P+
N+
Lp ngho
Knh dn N
Phin P
(a)
D
K hiu:
G
S
(b)
Hnh 4-8 Cu to (a) v k hiu (b) ca JFET knh dn N
4.2.2 Hot ng ca JFET khi thay i uDS
I. Khi uDS nh
-+
- +
uGS
S
N+
uDS
G
P+
A Knh dn
N
Phin P
D
N+
Lp ngho
Page 63
uDS
- +
uGS
N+
P+
Knh dn N
N+
Lp ngho
Phin P
uGS=0V
uGS<0
uGS= UTR<0
uDS
Page 64
I DSS
hng, UP= UTR, iD= IDSS= K.UP2 khi uGS = 0
2
UP
(4.6)
iD
IDSS
Ch ngho
Vng lm vic
(a) c tuyn cc ca
uGS
UP=UTR
uGS
(b) c tuyn truyn dn
Knh dn N
N+
(a)
K hiu:
Phin GaAs
khng pha tp
G
S
(b)
Hnh 4-13 Cu to (a) v k hiu (b) ca GaAsMESFET
c tuyn V-A gn ging nh- JFET c in p ng-ng UTR m. im
khc so vi JFET l: trong GaAsMESFET c bo ho tc xy ra hu nh- trn
ton b knh dn cn trong JFET ch xy ra trn on tht ca knh. V bo ho
tc c mc in tr-ng thp trong GaAs nn linh ng cc in t trong
GaAsMESFET cao. Mt im khc na ca GaAsMESFET l c knh dn ngn
nn trong vng dng khng i iD vn ph thuc nh vo uDS, -ng c tuyn
V-A dc hn (hnh 4-14).
iD
uGS=0
uGS<0
Page 66
uDS
b
iG
G
+ uGS
UGG
+
uDS
S
Vng Trit
IDmax
iD
Q D
iD
UDD
-ng ti
Q
IDQ
uGS=UGSQ
iS
b'
(a)
(b)
UDSQ
UDS0
uDS
U DD uDS
RD
(4.9)
RB
.U DD
RA RB
(4.11)
(4.12)
(4.13)
+ UDD -
RD
RA
iD
Q
G
RB
iG
+
uGS
-
+
uDS
iS
Page 68
RD
iD
Q
iG
RG
+
uGS
-
+
uDS
RS
iS
Page 69
RD
RA
iD
Q
G
RB
iG
+
uGS
-
+
uDS
RS
iS
RB
.U DD ,
RA RB
(4.18)
Page 70
p
J1
n
J
p 2
J3
n
b. Nguyn l hot ng
Page 71
Page 72
in p ngun
4.5.3. SCR
a. Cu to:SCR (Silicon Controlled Rectifier - Chnh lu c iu khin) c
cu trc ging diode Shockley nhng c thm cc ca G (Gate) ng vai tr l
cc iu khin.
A
p++
n
p+
n++
IB1
J1
n
J
p 2
J3
n
p
n
p
n
p
n
T1
IC2=2.IB2
IC1
G
IB2
T2
b. Nguyn l hot ng
U AK 0 : c tuyn Volt_Ampere ca SCR trong min ny tng t
vi c tuyn ca diode Shockley.
Page 73
u L u s . C th mc thm
Page 74
VR
uL
us
us mch nh trn th SCR c th c kch m ti
Tuy nhin, i vi s
gc pha ln nht l /2, do ti thi im us t gi tr cc i nu SCR vn
cha c kch m th khng th kch m ti gc pha ln hn. Mch trn cn
c gi l mch khng ch pha 900.
Ngng nh thng
us
uL
VR
SCR
Ngng kch
D
C
uC
uC u D uGK
in p uC dch pha so vi in p ngun mt gc trong khong ( 0 ),
2
ng vai tr ging in p ngun a in p dng ti cc ca G, nn c th
kch m SCR ti gc pha bt k trong khong ( 0 ) v c gi l mch
khng ch pha 1800.
4.5.4. Triac
a. Cu to
Triac l mt linh kin bn dn gm 2 SCR c ghp song song nhng
ngc chiu, 2 cc ca c ni vi nhau. i vi Triac, khng cn cc Anode
Page 75
b. Nguyn l hot ng
Triac tng ng vi mt cp SCR nn c kh nng dn dng theo c 2
chiu. Tng ng vi mi gi tr ca in p cc ca VG, Triac s c 2 ngng
nh thng khng i xng. Khi , Triac c kch m mt ln
n
us
trong mi na chu k. Tuy nhin, vai tr ca 2 cc MT1 v MT2 l khng
ging nhau. Dng kch cc ca G phi c a t cc MT2.
c.ng dng
Khc vi SCR c ng dng trong cc mch cng sut ln, Triac c
s dng trong mt s mch cng sut nh, v d nh chuyn mch n bo hiu
trong gia nh. Khu di pha RC c tc dng kch m Triac ti mt gi tr gc pha
bt k trong khong ( 0 ).
n
us
Page 76
us
Page 77
Hnh B09.1.
Hnh B09.2.
2.
VP c gi l in p nh v bng:
VP = n.VB2B1 + VD = n.VBB + VD.
2.
Vv : in p im trng.
3.
Iv : dng in im trng.
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