Central

2N5060 THRU 2N5064

TM

Semiconductor Corp.

SILICON CONTROLLED RECTIFIER

0.8 AMP, 30 THRU 200 VOLTS

DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5060 series
types are epoxy molded Silicon Controlled
Rectifiers designed for control systems and
sensing circuit applications.
MARKING CODE: FULL PART NUMBER

TO-92 CASE
MAXIMUM RATINGS: (TC=25C unless otherwise noted)
SYMBOL

2N5060

Peak Repetitive Off-State Voltage

VDRM, VRRM

RMS On-State Current (TC=60C)

Peak One Cycle Surge

IT(RMS)

0.8

ITSM

10

Peak Forward Gate Current (tp=20s)

IGM

1.0

Peak Reverse Gate Voltage

VGM
PGM

5.0

2.0

Peak Gate Power Dissipation

30

2N5061 2N5062 2N5063 2N5064 UNITS

60

100

150

200

Average Gate Power Dissipation (t=20s) PG (AV)

Storage Temperature
Tstg

0.1

-40 to +150

Junction Temperature

-40 to +125

TJ

ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)

SYMBOL
TEST CONDITIONS
MIN

TYP

MAX

UNITS

IDRM, IRRM
IDRM, IRRM
IGT

Rated VDRM, VRRM, RGK=1K

Rated VDRM, VRRM, TC=125C, RGK=1K
VD=7.0V, RL=100, RGK=1K

200

IGT
IH

VD=7.0V, RL=100, RGK=1K, TC=-65C

RGK=1K

350

5.0

mA

IH
VGT

RGK=1K, TC=-65C

10

mA

VD=7.0V, RL=100
VD=7.0V, RL=100, TC=-65C
VD=7.0V, RL=100, TC=125C

0.8

1.2

VGT
VGT
VTM
dv/dt
tq

ITM=1.2A
VD=0.67V x VDRM, TC=125C, RGK=1K
VD=0.67V x VDRM, TC=125C, RGK=1K

1.0

50

0.1

V
1.7
30

V
V/s

200

R4 (25-August 2004)

Central

TM

2N5060 THRU 2N5064

Semiconductor Corp.
SILICON CONTROLLED RECTIFIER
0.8 AMP, 30 THRU 200 VOLTS

TO-92 CASE - MECHANICAL OUTLINE

LEAD CODE:
1) CATHODE
2) GATE
3) ANODE
MARKING CODE:
FULL PART NUMBER

SYMBOL
A (DIA)
B
C
D
E
F
G
H
I

DIMENSIONS
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.175 0.205 4.45
5.21
0.170 0.210 4.32
5.33
0.500
12.70
0.016 0.022 0.41
0.56
0.100
2.54
0.050
1.27
0.125 0.165 3.18
4.19
0.080 0.105 2.03
2.67
0.015
0.38
TO-92 (REV: R1)

R4 (25-August 2004)

This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.