2SA1216

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922)

Ratings

Unit

VCBO

VCB=180V

100max

VEB=5V

100max

IC=25mA

180min

24.40.2

VCEO

180

IEBO

VEBO

V(BR)CEO

IC

17

hFE

VCE=4V, IC=8A

30min

IB

VCE(sat)

IC=8A, IB=0.8A

2.0max

PC

200(Tc=25C)

fT

VCE=12V, IE=2A

40typ

MHz

Tj

150

COB

VCB=10V, f=1MHz

500typ

pF

55 to +150

hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)

2-3.20.1

7
21.40.3

IC
(A)

VB2
(V)

IB1
(A)

IB2
(A)

ton
(s)

tstg
(s)

tf
(s)

40

10

0.3typ

0.7typ

0.2typ

I C V CE Characteristics (Typical)

50mA

I B =20mA

0.8

1.0

125C
100
25C
30C

50

10
0.02

10 17

0.1

f T I E Characteristics (Typical)

2.4

j-a t Characteristics

0.5 1

10 17

0.5

0.1

10

Collector Current I C (A)

Collector Current I C (A)

e T
emp

Base-Emittor Voltage V B E (V)

200
DC Cur rent Gain h F E

50

100

1000

2000

Time t(ms)

Safe Operating Area (Single Pulse)

P c T a Derating

(V C E =12V)
200

10
m

Emitter Current I E (A)

10

0.2
2

10

100

Collector-Emitter Voltage V C E (V)

300

nk

si

0.1

at

0
0.02

Without Heatsink
Natural Cooling

he

0.5

120

ite

fin

160

In

20

DC

10

ith

Collect or Cur ren t I C (A)

40

yp

M aximum Power Dissipa ti on P C (W)

50

60

Cu t-off Fre quen cy f T (MH Z )

DC Curr ent Gain h F E

Typ

0.6

(V C E =4V)

300

0.5

0.4

h FE I C Temperature Characteristics (Typical)

(V C E =4V)

0.1

0.2

Base Current I B (A)

h FE I C Characteristics (Typical)

10
0.02

e T
em
p)
Tem
p)

5A
0

Collector-Emitter Voltage V C E (V)

100

I C =10A

j - a ( C/W)

10

Cas

Cas

100mA

15

C(

150mA

(V C E =4V)

17

125

2 00 mA
10

Collector Current I C (A)

3 00 m

I C V BE Temperature Characteristics (Typical)

Transient Thermal Resistance

5A
1
A
00
m
A
5

1.

mA

3.0 +0.3
-0.1

5.450.1
C

Weight : Approx 18.4g

a. Part No.
b. Lot No.

V CE ( sa t ) I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )

Collector Current I C (A)

15

0
40

0.65 +0.2
-0.1

1.05 +0.2
-0.1

RL
()

2
3

5.450.1

VCC
(V)

m
00

Typical Switching Characteristics (Common Emitter)

17

2.1

C(

Tstg

6.00.2

36.40.3

30

Conditions

ase

180

VCBO

External Dimensions MT-200

(Ta=25C)

SymboI

C(C

Unit

25

Ratings

4.0max

Electrical Characteristics

Absolute maximum ratings (Ta=25C)

Symbol

Application : Audio and General Purpose

20.0min

LAPT

80

40

5
0

Without Heatsink
0

25

50

75

100

125

150

Ambient Temperature Ta(C)

13