Semiconductors From Wafer to Chip.

Ralf Hlsewede, JENOPTIK Diode Lab GmbH

Dirk Lorenzen, JENOPTIK Laserdiode GmbH

Outline

The Epitaxial Wafer

Single Emitter and Bars
Relations to the Datasheet
High Quality Production
Laser Diode D Diode Laser
Packaging Aspects
Thermal Resistance
Reliability at High Power
Semiconductors - From Wafer to the Chip.ppt 2008-04-18

www.jold.com

The Epitaxial Wafer

Single Emitter and Bars
Relations to the Data Sheet
High Quality Production
Laser Diode - Diode Laser
Packaging Aspects
Thermal Resistance
Reliability

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

The Epitaxial Wafer

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The Epitaxial Wafer

Laser
Structure:

Generation of light ( quantum well hetero structure)

Guiding of light

( optical waveguide )
p-contact layer
p-cladding
p-waveguide
active area
n-waveguide
n-cladding
n-substrate

Wavelength
Fast Axis Divergence
Semiconductors - From Wafer to the Chip.ppt 2008-04-18

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The Epitaxial Wafer

Single Emitter and Bars
Relations to the Data Sheet
High Quality Production
Laser Diode - Diode Laser
Packaging Aspects
Thermal Resistance
Reliability

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

Single Emitter and Bars

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Single Emitter and Bars

Broad Area Laser Diodes

Single Emitter 6 W 30 W

120m

Far Field
FA

90 - 800m
600 - 1200m

0
10 0

0
0
0
4

Cladding
Waveguide
Active area
Waveguide
Cladding

SA
Semiconductors - From Wafer to the Chip.ppt 2008-04-18

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Diode Laser Bar

Several BA-Laser Diodes for getting higher power levels (40 120 W)

0,1 mm

0,1mm

0,15 - 0,5 mm

Filling Factor

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

Aperture Width (Stripe Width)

Pitch

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BA-Laser Diode: Far Field

vertical

(95%)

Fundamental mode

Independent of power level

q(95%) from 33 to 64

11

lateral

(95%)

divergence (95%),

10

L = 2 mm
L = 3 mm

Multimode

Changing with:
- power
- cavity length L

q(95%) from 7 to 9

8
7
6
2,0

2,5

3,0

3,5

4,0

4,5

5,0

power per emitter, W

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

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BA-Laser Diode: Wavelength

Example: 808 nm bar

1,0

803,7

804,0

intensity, a.u.

0,8
0,6

804,3

FWHM

0,4

804,1

0,2
0,0
795

804,1

95%
800

805

810

wavelength, nm

Short pulse spectrum

(60A, 300 s, 1% d.c.)
Spectral Bandwidth: 2 nm (FWHM)
4 nm (95%)

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

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Wavelength distribution on wafer:

Dl = 1 2 nm

The Epitaxial Wafer

Single Emitter and Bars
Relations to the Data Sheet
High Quality Production
Laser Diode - Diode Laser
Packaging Aspects
Thermal Resistance
Reliability

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

www.jold.com

10

Relations to the Data Sheet

Laser structure:

- Pulse Wavelength
- Fast Axis Far Field
- Spectral Bandwidth
- Operating Voltage
- Conversion Efficiency (maximum)
- Polarization (TE,TM)
- Slow Axis Far Field
120m

Layout (Emitter size):

90 - 800m
600 - 1200m

0
100

m
000
-4

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

- Serial Resistance
- maximum Power Level (COMD-Limit)
- Threshold Current

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11

The Epitaxial Wafer

Single Emitter and Bars
Relations to the Data Sheet
High Quality Production
Laser Diode - Diode Laser
Packaging Aspects
Thermal Resistance
Reliability

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

www.jold.com

12

High Quality Production

Technology :
1. Epitaxierter Wafer

4. Facettenbeschichtung

Quality Control:

2. Prozessierter Wafer

6. Endmessung, Verpacken, Versand

Process steps
Measurement of uncoated laser bars, final measurement
(short pulse measurement, unmounted bars)
Individual bar numbers on each wafer

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

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13

The Epitaxial Wafer

Single Emitter and Bars
Relations to the Data Sheet
High Quality Production
Laser Diode - Diode Laser
Packaging Aspects
Thermal Resistance
Reliability

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

www.jold.com

14

Definitions

Laser diode
Laser diode bar
Diode laser

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

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Definitions

Laser diode
Laser diode bar
Diode laser

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

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16

The Epitaxial Wafer

Single Emitter and Bars
Relations to the Data Sheet
High Quality Production
Laser Diode - Diode Laser
Packaging Aspects
Thermal Resistance
Reliability

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

www.jold.com

17

Packaging Aspects

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

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High-power adapted packaging

Soft Solder Packaging

Hard Solder Packaging

bonding wires

N-contact-lid

Laser diode bar

Solder/adhesive

AuSn - Solder

Laser diode bar

CuW - Substrate

Soft solder (In)

Sn - solder

Cu - heat sink

Cu - Heat sink

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

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19

Demonstration of improved performance

for hard pulse mode for 915nm bars with 20% filling

Soft Solder Packaging

40W

Hard Solder Packaging

60W 80W)
915nm/20% filling/ passivelx cooled - hard pulse mode

915nm/20% filling/passively cooled - hard pulse mode

65

40

60

35

55
P in W

P in W

45

30

50

25

45

20

40

2000

4000

6000

8000

10000

4000

6000

8000

10000

BI time in h

BI Time in h
Semiconductors - From Wafer to the Chip.ppt 2008-04-18

2000

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The Epitaxial Wafer

Single Emitter and Bars
Relations to the Data Sheet
High Quality Production
Laser Diode - Diode Laser
Packaging Aspects
Thermal Resistance
Reliability

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

www.jold.com

21

Thermal Resistance

Pel = 80 W
TL = 55 C

Popt
= 40 W

T = 30 K
Pth = 40 W

Rth =

T
Pth

30 K

TK = 25 C
=

0,75 K/W

40 W

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

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22

Transient thermal behavior

0,9

thermal impedance / K/W

0,8

passively cooled assembly

actively cooled assembly

0,7

0.57 K/W

0,6
0,5
0,4
0,3
0,2
0,1
0
1E-05 0,0001

0,001

0,01

0,1

10

100

10

12

14

16

18

20

time / s

time / s

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

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23

The Epitaxial Wafer

Single Emitter and Bars
Relations to the Data Sheet
High Quality Production
Laser Diode - Diode Laser
Packaging Aspects
Thermal Resistance
Reliability

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

www.jold.com

24

Reliability of 940nm bars, 20% filling, 80W cw

passively cooled, hard solder packaging, hard pulse mode

CH_01138 F0768-8
CH_01129 F0768-8
CH_01160 F0768-8

CH_01127 F0768-8
CH_01135 F0768-8
CH_01161 F0768-8

CH_01179 F0768-8
CH_01131 F0768-8
CH_01132 F0768-8

CH_01180 F0768-8
CH_01177 F0768-8

80

P in W

75

70

65

60
0

2000

4000

6000

8000

10000

12000

BI time in h
Semiconductors - From Wafer to the Chip.ppt 2008-04-18

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Reliability of 940nm bars, 20% billing, 80W cw

passively cooled, hard solder packaging

Time of
failures [h]
267.177
283.135

0,44

95% survivors

119.387 h

90% confidence level

13,06

MTTF

521.041 h

302.571
315.141
359.066
413.527
censored
censored
censored
censored
censored
censored

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

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Aging behavior of 940nm bars at 155W (170A)

in cw mode, passively cools, hard solder packaging

CH_05362 F1147-7
CH_05304 F1147-7
CH_05718 F1147-7

CH_05007 F1147-7
CH_05339 F1147-7
CH_05609 F1147-7

CH_05031 F1147-7
CH_05899 F1147-7
CH_05628 F1147-7

CH_05889 F1147-7
CH_05719 F1147-7
CH_05743 F1147-7

170
160

P in W

150
140
130
120
110
100
0

500

1000

1500

2000

2500

3000

3500

BI time in h
Semiconductors - From Wafer to the Chip.ppt 2008-04-18

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Products
based on high power passively cooled diode lasers

1x 60W (45W ex fiber)

4x 80W120W (250W ex fiber)

2x 60W80W (140W ex fiber)

Semiconductors - From Wafer to the Chip.ppt 2008-04-18

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Thank you for your attention.

JENOPTIK Laserdiode GmbH, www.jold.com