D196

Journal of The Electrochemical Society, 159 (4) D196-D199 (2012)

0013-4651/2012/159(4)/D196/4/$28.00 The Electrochemical Society

Vertical Structure GaN-Based Light Emitting Diodes with

Electrochemically Deposited Stress-Free Nickel Substrate
Sunjung Kim ,z
School of Materials Science and Engineering, University of Ulsan, Ulsan 680-749, Korea

Ni substrates were electrochemically deposited on p-GaN side of vertical structure GaN-based light emitting diodes (LEDs). The Ni
substrate functions as a part of p-electrode, a heat sink, and a mechanical supporter of vertical structure LED devices. Using a proper
Ni electrodeposition bath, the residual stress of 50-m thick Ni substrates was lower than 10 MPa, which is very low to be regarded
as stress-free. Stress-free Ni substrate with better mechanical strength than Cu substrate was effective in minimizing mechanical
damage possibly generated during LED chip fabrication. Vertical structure LED devices comprised in a 2-inch Ni-supported wafer
had forward voltage on average as low as 3.35 V at 20 mA compared with 3.54 V of Cu-supported LED devices. Ni-supported
LED devices showed comparable optical performance to Cu-supported LED devices in output power and operation reliability at
constant forward currents. Electrical and optical performances of vertical structure LEDs with WO3 -added Cu substrate, which was
previously considered to enhance the mechanical property of pure Cu substrate, were also presented for reference. In conclusion, Ni
substrate affects the efciency of vertical structure LEDs positively more than Cu and WO3 -added Cu substrates as long as those
substrates are electrodeposited equally in stress-free conditions.
2012 The Electrochemical Society. [DOI: 10.1149/2.044204jes] All rights reserved.
Manuscript submitted October 14, 2011; revised manuscript received November 28, 2011. Published January 24, 2012.

Compared with conventional structure GaN-based light emitting

diodes (LEDs), it has been recently recognized that vertical structure GaN-based LEDs are more adequate for high power blue light
emission due to their superiority in current spreading, heat dissipation, and light extraction.1, 2 One of distinctive features of the vertical
structure LEDs is employing a secondary substrate in order to replace
a sapphire substrate. The sapphire substrate has been conventionally
used to grow GaN-based multi-layers epitaxially, and at the same
time, it functions as a mechanical supporter to hold a whole LED
structure. However, the sapphire substrate should be removed from
multi-layered LED structure by mostly laser lift-off (LLO) method
after a secondary substrate is formed on p-GaN side of vertical structure LED. The secondary substrate becomes a part of p-electrode as
well as a mechanical supporter with sufcient thermal and electrical
conductivities.
The secondary substrate can be usually created on p-GaN side of
vertical structure LEDs by wafer bonding or electrochemical deposition method. The wafer bonding method includes low-temperature
heating process to attach a non-metallic or metallic wafer to multilayered LED structures using solder layers.3, 4 It is relatively simple,
but thermal damages from heating process can be generated within
the secondary wafer and the LED layers. Moreover, the electrical performance of vertical structure LEDs can be deteriorated due to the
increase of interfacial contact resistance caused by soldering process.
On the other hand, the electrochemical deposition method is used to
grow a thick metallic layer, which is mostly Cu (or Cu alloy), on a
highly conductive Au or Cu seed layer at room temperature. It has been
previously reported that vertical structure LEDs with excellent electrical and optical performance can be fabricated by electrodepositing
a Cu substrate as a secondary substrate.57
In spite of some advantages of vertical structure LEDs with electrodeposited Cu substrate, there are still problems in the usage of
electrodeposited Cu substrate to be considered for more reliable LED
chip fabrication and improved operational stability of vertical structure
LEDs. Serious mechanical damages can be possibly generated during
post-LLO processes for LED chip fabrication because Cu substrate in
the thickness of mostly less than 150 m is too ductile to steadily hold
thin GaN-based LED multi-layers without uttering or bending considerably. Mechanically damaged LED wafers during chip fabrication
can cause the reduction in nal LED chip yield and the degradation in
performance and reliability of vertical structure LED chips. Nevertheless, merely thickening Cu substrate to increase its solidity cannot be
Electrochemical Society Active Member.
z

E-mail: sunjungkim@ulsan.ac.kr

a proper approach to the mechanical damage problem because thick

Cu substrate can possibly bring thermal damage to multi-layered LED
structure in laser scribing process for chipping a LED wafer. Residual
stress of Cu substrate developed during its electrodeposition should
also be managed to the minimum by optimizing electrodeposition conditions. Considerable bending of Cu substrate holding thin and weak
GaN-based multi-layers leads to even the failure of vertical structure
LED devices during or after LLO process.8
In efforts to overcome the disadvantages of electrodeposited Cu
substrate, some alternatives of a secondary substrate for vertical structure GaN-based LEDs have been proposed previously. Kuo et al. suggested a Sn-based solder ball substrate formed by photolithography
techniques to make a dicing-free vertical LED structure.9 Sung et al.
reported very recently the possibility of fabricating vertical structure
LEDs supported by a diamond-metal composite substrate.10 However,
their fabrication procedures are relatively complicated and should be
studied further to be more realistic. Electrodeposition of Cu alloy
substrate was also proposed to enhance the mechanical strength of
pure Cu substrate.11 The benets of pure Cu substrate such as excellent electrical and thermal properties could be preserved by alloying
Cu slightly. We have recently found that adding less than 2 at% W
as WO3 in Cu substrate by electrodeposition method can improve
its hardness considerably.12 However, a more simple and feasible alternative method to replace Cu substrate is to electrodeposit another
pure metal substrate such as Ni. It was previously reported that vertical structure LEDs with electrodeposited Ni substrate could have
better electrical and optical performances than conventional structure
LEDs.13
In this study, we report on vertical structure GaN-based LEDs supported by electrodeposited Ni substrate of which residual stress was
minimized by controlling deposition current density in a Ni bath. We
studied the effect of mechanical stability of stress-free Ni substrate
on the wafer-scale uniformity of operation voltage of LED devices
after LLO process, in comparison with stress-free Cu substrate. Electrical and optical performances of vertical structure LED chips with
Ni, Cu, and WO3 -added Cu substrates are also investigated. To the
best of our knowledge, relating the material and stress state of electrodeposited metallic substrates with the operational performances of
vertical structure LEDs was rarely studied previously despite of their
close relevance.
Experimental
For the fabrication of vertical structure LEDs, we employed
2-inch diameter sapphire wafers with GaN-based LED layers consisting of a buffer GaN layer, a Si-doped n-GaN layer, InGaN/GaN

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Journal of The Electrochemical Society, 159 (4) D196-D199 (2012)

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Results and Discussion

Figure 1. Schematic illustrations of vertical structure GaN-based LEDs mechanically supported by Ni substrate after (a) the LLO of the sapphire substrate,
and (b) n-electrode deposition and chipping.

multiple quantum wells (MQW), and a Mg-doped p-GaN layer, which

were epitaxially grown by metallorganic chemical vapor deposition.
Backside of the sapphire wafer was polished to transparency for
laser irradiation in the LLO process. Figure 1 shows vertical stacking
structure of current GaN-based LED devices. The chip area of 350
350 m was dened by creating trench lines between the chips
using inductively coupled plasma reactive ion etching (ICP-RIE). A
reective p-electrode of Ni (2 nm)/Ag (200 nm)/Ni (200 nm)/Au
(300 nm) was deposited on the p-GaN using RF magnetron sputtering
at an RF power of 150 W in an argon environmental chamber. The
p-GaN/p-electrode contact was annealed at 400 C for 6.5 min in O2
conditions using a rapid thermal processor to form an ohmic contact.
7-m thick photoresist (PR, Microchem Corp.) passivation structure
was formed with lling the trench lines.
An Au-based seed layer of W (20 nm)/Ni (100 nm)/Au (500 nm)
was deposited throughout the LED wafer surface using RF magnetron sputtering to form an electrical conductor for the subsequent
electrodeposition of a Ni substrate. A Ni bath for electrodeposition
included 96 g L1 nickel sulfamate, 45 g L1 boric acid, 24 g L1
sulfuric acid, and 1.0 g L1 sodium lauryl sulfate. Bath temperature
was maintained constantly at 55 C. Current density was varied from
20 to 60 mA cm2 for galvanostatic Ni deposition using a potentiostat (IviumStat, Ivium Technologies Inc.). Initially, Ni layers were
electrodeposited in various thicknesses from 50 to 200 m to study
the inuence of Ni layer thickness on residual stress. For LED chip
fabrication, only 50-m thick Ni layer was electrochemically grown
on the Au-based seed of vertical structure LED wafers. Conditions for
electrodepositing stress-free Cu and WO3 -added Cu substrates can be
found in our previous works.7, 12 A 248-nm KrF excimer laser was
irradiated through the transparent sapphire substrate at an energy density of 0.3 J cm2 to remove the sapphire substrate. An n-electrode of
Ti (20 nm)/Al (20 nm)/Au (300 nm) was deposited on n-GaN surface
exposed after etching the buffer GaN layer.
A eld emission scanning electron microscope (FE-SEM, JOEL
JSM-840) was used to characterize the surface morphology of Ni
substrates. The residual stress of electrodeposited Ni layers was measured using a surface prolometer (Veeco Dektak 8 ADP), which
was equipped with stress analysis software based on a modied
Stoney equation, which is valid to calculate the residual stress of
relatively thick layers. The wafer-scale mapping of forward voltage at 20 mA was carried out using a LED die sorter (QMC).
A parameter analyzer (HP 4155A) was used to characterize the
current-voltage (I-V) behavior of vertical structure LED chips. The
output power of vertical structure LED chips was measured from
the integrating sphere system using a spectrometer (Optical Precision
OPC-2100).

As shown in Fig. 1, vertical structure LEDs are composed of many

different thin and thick layers. Residual stress can possibly remain
within individual layers depending on deposition condition. Reducing
the residual stress of each layer component to the minimum in vertical
structure LEDs is necessary to avoid the degradation in operational
performance of LED chips and even their complete failure during
chip fabrication procedure. It was already shown in our previous
work that it is possible to manage the operational sustainability and
optical properties of vertical structure LED chips with Cu substrates
by controlling the residual stress of PR passivation, Au seed, and Cu
substrate, which are layer components to most critically inuence the
overall stress of vertical structure LEDs.8 In this study, except Ni
substrate formation, we employed the same deposition conditions for
most layer components as previous ones of fabricating Cu-supported
vertical structure LEDs in order to keep the residual stress of layer
components as low as possible. The variation in the residual stress of
Ni substrate should also be considered according to electrodeposition
conditions because substantial bending of a Ni-supported LED wafer
caused by large residual stress of Ni substrate can bring out serious
mechanical damages during chip fabrication procedure.
It is well-known that the residual stress of a polycrystalline metal
layer depends on its microstructure, especially grain size.1417 As a
metal layer thickens, its residual stress is generally increased because
total volume of grain boundary, which is known as an origin of tensile residual stress, also rises.18, 19 A main parameter to affect the
microstructure of a galvanostatically electrodeposited metal layer is
the current density among electrodeposition conditions. Therefore,
substrate thickness and current density was selected as experimental
variables to investigate the change of residual stress of galvanostatically electrodeposited Ni substrates, as shown in Fig. 2. The residual stress of Ni substrates is essentially tensile and becomes larger
as the current density increases. It is shown from SEM images in
Fig. 2 that the grain size of 200-m thick Ni substrate gets smaller
with higher current density. 200-m thick Ni substrate with ner microstructure created at higher current density contains more volume of
grain boundaries, which are in tensile stress state because neighboring grains coalescence one another to form a lm or layer by lateral
zipping process.15 Thus, Ni substrate electrodeposited at high current
density is in relatively large tensile stress. Nevertheless, the largest
residual stress of 200-m thick Ni substrate was only 48 MPa at a
constant application of 60 mA cm2 .

Figure 2. Variations in the residual stress of electrodeposited Ni substrates of

various thicknesses as a function of deposition current density. SEM images
(inlet) show the microstructures of Ni substrates deposited at 20, 40, and
60 mA cm2 , respectively.

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D198

Journal of The Electrochemical Society, 159 (4) D196-D199 (2012)

However, 200 m for Ni substrate is too thick to apply to vertical structure LED wafers considering possible thermal damage in
laser scribing process and efcient heat dissipation during LED operation. Ni substrate is desired to be as thin as possible if a thin Ni
substrate can protect fragile GaN-based multi-layers sufciently from
harsh wafer handling during chip fabrication procedure. Moreover, as
shown in Fig. 2, thinner Ni substrate has lower residual stress. Even at
60 mA cm2 , the residual stress of 50-m thick Ni substrate is less
than 10 MPa, which can be regarded as a stress-free condition practically. The residual stress of Ni substrates presented in Fig. 2 was
calculated following Brenners work as below:20




tf
1 1
1
E s ts2
1
[1]
f =

6 R2
R1 (1 s ) t f
ts
where Es and s denote Youngs modulus and Poissons ratio of the
sapphire substrate, which are 370 GPa and 0.27, respectively. R1 and
R2 are the LED wafers radii of curvature before and after Ni layer
deposition. However, Brenners modication of Stoney equation can
produce some error when the thickness ratio (tf /ts ) of a deposited
layer to a substrate exceeds 0.1.21 Therefore, it can be another reason
that 50-m thick Ni substrate is more appropriate for vertical structure LEDs compared with thicker Ni substrates because more exact
stress measurement is possible, considering 430-m thick sapphire
substrates.
Ni substrate for vertical structure LEDs was proposed primarily to
replace current Cu substrate because its hardness is more than three
times larger than that of Cu substrate. Furthermore, its electrical and
thermal conductivities are acceptable in consideration of its use as a
part of p-electrode and a heat sink. Wafer-scale sorting of individual
LED devices according to forward operation voltage after n-GaN exposure is helpful to understand whether Ni substrate gives improved
mechanical stability to vertical structure LEDs compared with Cu
substrate. Ni- and Cu-supported vertical structure LED wafers were
prepared, respectively, in order to measure forward voltage, Vf of
vertical structure LED devices at 20 mA on wafer scale, as shown
in Fig. 3. Ni and Cu substrates were stress-free and 50 m thick
alike. Prior to the wafer-scale measurement of forward voltage, both
wafers went through the photolithography and ICP-RIE processes to
remove buffer GaN layer after LLO process. Those processes include
harsh handlings of LED wafers, which are supported by 50-m thick
Ni or Cu substrates, such as etching, cleaning, spraying, N2 blowing, and laser irradiation. It is always possible for individual vertical
structure LED devices to be damaged mechanically during fabrication processes after metal substrate formation, whereas conventional
structure LED devices have very less chance to experience mechanical
damage because a much thicker and sturdy sapphire substrate holds
thin GaN-based multi-layers.
The wafer-scale measurement of forward voltage enables us to
estimate the extent of mechanical damage of LED devices according
to electrodeposited metal substrate. The number of vertical structure
LED devices in a 350 350 m dimension is around 12,000 for each
wafer in Fig. 3. Vertical structure LED devices in the Cu-supported
wafer shown in Fig. 3a have a wide range of forward voltage from
3.0 to 4.0 V. An average value of their forward voltages is 3.54 V

Figure 3. Wafer-scale mapping of forward operation voltage (at 20 mA) of

2-inch diameter vertical structure GaN-based LED wafers supported by (a) a
stress-free Cu substrate and (b) a stress-free Ni substrate. The substrates were
electrodeposited in the thickness of 50 m alike.

Figure 4. Current-voltage (I-V) curves of vertical structure GaN-based LEDs

with Cu, Ni, and WO3 -added Cu substrates, indicating forward operation
voltage at 20 mA.

and a standard deviation is 0.09. On the other hand, forward voltages

of Ni-supported vertical structure LED devices shown in Fig. 3b are
in the range from 3.0 to 3.6 V, and their average value is as low as
3.35 V compared with Cu-supported LED devices. Their standard
deviation is 0.06. Moreover, the wafer-scale distribution of forward
voltages of Ni-supported LED devices is more uniform than that of
Cu-supported LED devices. It is also worth to be noted in Fig. 3a that
especially Cu-supported LED devices located near the wafer edge
show relatively high forward voltages. It indicates that ductile Cu
substrate is not strong enough to prevent the degradation of LED
devices from the uttering of the Cu-supported LED wafer during
post-electrodeposition processes. Thus, judging from the result of the
wafer-scale measurement of forward voltage, it can be stated that
Ni substrate is more appropriate than Cu substrate to hold thin and
fragile GaN-based LED layers as long as its thickness and residual
stress condition is the same as that of Cu substrate.
In order to make complete vertical structure LED chips, nelectrodes were sputter-deposited on exposed n-GaN surface and then
individual LED devices were separated by laser scribing process. Niand Cu-supported vertical structure LED chips were selected randomly from the central region of both wafers to measure their I-V
characteristics, as shown in Fig. 4. An I-V curve of a vertical structure LED chip supported by Cu substrate with WO3 addition was
also plotted for reference in the same gure. Our recent work showed
that Cu substrate with a uniform distribution of WO3 particles can
be formed by electrodeposition method.12 The residual stress of the
WO3 -added Cu substrate was managed to be almost zero, and moreover its electrical resistivity was not increased much from that of pure
Cu substrate, in spite of adding WO3 particles. The main benet of using the WO3 -added Cu substrate is to enhance the mechanical strength
of Cu substrate by at least 1.5 times by adding less than 2.0 at% W as
WO3 . Therefore, the comparison in the I-V characteristics of vertical
structure LED chips supported by Ni and WO3 -added Cu substrates
is meaningful to observe the inuence of mechanically strengthened
substrates on the electrical performance of vertical structure LED devices. The hardness of a 50-m thick Ni substrate was around 340 in
Vickers hardness scale (Hv ) compared to 98 and 150 of a Cu substrate
and a WO3 -added Cu substrate, respectively. As shown in Fig. 4, with
forward bias applied to vertical structure LED chips with three different substrates, they presents more or less distinctive responses to
current change. The I-V curves for Ni and WO3 -added Cu substrates
are similarly plotted each other, but the forward voltage, 3.23 V of
a Ni-supported LED chip is lower than 3.35 V of a LED chip with
WO3 -added Cu substrate at 20 mA. The I-V curve for Cu substrate
shows that a larger forward voltage, 3.50 V is required to reach

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Journal of The Electrochemical Society, 159 (4) D196-D199 (2012)

D199

100 mA. It is remarkable that the output power conservation ability of

Ni-supported LED devices after long operation is as good as that of
Cu-supported LED devices. It was already elucidated in our previous
works that, in comparison with conventional structure LEDs supported
by sapphire substrate, stress-free Cu substrate is highly benecial not
to lose the light output power of vertical structure LEDs signicantly
after long-term working.6, 8 After all, vertical structure LED devices
with stress-free Ni substrate have excellent light output performance
comparable to that of LED devices with stress-free Cu substrate.
Conclusions

Figure 5. Variations in the light output power of vertical structure GaN-based

LEDs with Cu, Ni, and WO3 -added Cu substrates (a) according to applied
current and (b) for 500-hr aging at 100 mA.

20 mA. Accordingly, vertical structure LED devices sustained by

mechanically strengthened substrates such as Ni and WO3 -added Cu
during fabrication procedure have better electrical performance than
ones with Cu substrate. Stress-free Ni substrate, in particular, brings
out the lowest operation voltage of vertical structure LED devices on
average. The residual stress of all supporting materials was optimized
as almost zero by controlling electrodeposition condition.
Previously sorted LED chips were also used to measure their output
power according to applied forward current, as shown in Fig. 5. It is
necessary to investigate the effect of only substrate material on the
optical performance by sorting out LED chips with the same forward
voltage of 3.30 V at 20 mA for all substrates. Figure 5a shows the
variation in the output power of vertical structure LED chips supported
by different metallic substrates with current change. Each data point
represents average values of output power of 10 LED chips with the
operation voltage of 3.30 V at 20 mA. Supposing that their stacking
structure and intrinsic properties are almost identical except substrate
material, LED devices with Cu substrate generate higher output power
than those with Ni and WO3 -added Cu substrates. Nevertheless, the
output power of Ni-supported LED devices is comparable to that of
Cu-supported LED devices. The electrical resistivity of 50-m thick
Cu, Ni, and WO3 -added Cu substrates was measured as 2.38, 8.15,
and 12.6 -cm, respectively. It can be stated that electrical property
of electrodeposited metallic substrate may be considerably related
with the light emitting power of vertical structure LEDs. 500-hr aging
tests of vertical structure LED chips with metallic substrates were also
conducted to characterize the operation reliability of LED devices, as
shown in Fig. 5b. The LED chips with metallic substrates still keep
more than 95% of initial output power after operating for 500 hr at

Vertical structure GaN-based LEDs with Ni substrate were fabricated in order to enhance their mechanical stability by employing
a proper Ni electrodeposition condition. Ni substrate could support
thin and fragile GaN-based multi-layers rmly more than Cu substrate during LED fabrication procedure while its residual stress was
managed as low as possible. The residual stress of electrodeposited
Ni substrate was dependent on the substrate thickness and deposition
current density. On the wafer-scale measurement after harsh LLO
process, forward operation voltage of vertical structure LED devices
supported by Ni substrate was lower than that of Cu-supported LED
devices on average. Forward current responding to applied forward
bias voltage was relatively high in Ni-supported LED devices compared with LED devices supported by pure Cu and WO3 -added Cu
substrates. When selecting LED devices with the same operation voltage, optical performances of Ni-supported LED devices such as light
output power and long-term reliability were comparable to those of
Cu-supported LED devices. As a result, electrodeposited Ni substrate
is appropriate to provide vertical structure LED devices with improved
mechanical stability against Cu substrate during LED chip fabrication
procedure. In addition, the electrical and optical properties of vertical
structure LEDs with stress-free Ni substrate are comparable to vertical
structure LEDs with stress-free Cu and WO3 -added Cu substrates.
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